DLA A-A-55165-1995 CONNECTORS ELECTRICAL SOCKETS SINGLE IN LINE MEMORY MODULE SINGLE VERTICAL TYPE 64 CONTACTS《64触点单垂直型单列直插存贮模块插座电气连接器》.pdf
《DLA A-A-55165-1995 CONNECTORS ELECTRICAL SOCKETS SINGLE IN LINE MEMORY MODULE SINGLE VERTICAL TYPE 64 CONTACTS《64触点单垂直型单列直插存贮模块插座电气连接器》.pdf》由会员分享,可在线阅读,更多相关《DLA A-A-55165-1995 CONNECTORS ELECTRICAL SOCKETS SINGLE IN LINE MEMORY MODULE SINGLE VERTICAL TYPE 64 CONTACTS《64触点单垂直型单列直插存贮模块插座电气连接器》.pdf(5页珍藏版)》请在麦多课文档分享上搜索。
1、A-A-55165 9999974 0167884 972 METRIC A- A- 55 165 23 June 1995 COMMERCIAL ITEM DESCRIPTION CONNECTORS, ELECTRICAL, SOCKETS SINGLE IN LINE MEMORY MOOULE, SINGLE VERTICAL TYPE, 64 CONTACTS The General Services Administration has authorized the use of this comnercial item description (CID), for all fed
2、eral agencies. 1. SCOPE. This CID covers the general requirements for a single, vertical inline memory module connector uith 64 contacts. This coniector provides the user with convenient low insertion and easy extraction of high density memory modules which conform to JEDEC swcifications for SIMM mo
3、dules. Connectors covered by this CID are i nte4ed for comercia I / i dust r i a I appl i cat ions. 2. CLASSIFICATION. This CID uses a classification system which is Nunber (PIN) as shown in the following example (see 7.1). AA55165 o1 S l I I I I I included in the Part or Identification A CID NUMBER
4、 S - SINGLE ROW CONTACT PLATING TYPE 3. Salient characteristics. 3.1 Design, construction and dimensions. Design, construction and dimensions shall be as specified in accordance with figure 1, table I and shall accomnodate JEDEC configured SIMM memory modules. 3.2 Contacts. Code G contacts (dash nun
5、ber -01) are formed of a high conductivity, high strength copper alloy with gold over nickel plating in the contact area. Code T contacts (dash nunber -02) are formed of a high conductivity, high strength copper alloy uith tin/lead plating over all areas. 3.3 Comector housing. withstanding temperatu
6、res of vapor phase, infrared, or wave type soldering assembly processes. 3.4 Contact stress. 3.5 Misconnection. Built in polarization eliminates misconnection of SIMM module to connector. Additional polarization feature to align socket to printed wiring board for simplification of assembly. 3.6 Diel
7、ectric withstanding voltage. When tested at 1,000 V ac, there shall be no breakdown of insulation or leakage current in excess of 5 mA between adjacent contacts for one minute. 3.7 Operating temperature. Connector housings are made from high temperature thermoplastic material capable of The connecto
8、r design provides anti-stress protection for contacts. The operating temperature range shall be from -55C to +105C. Beneficial cwrments, .recommendations, additions, deletions clarifications, etc. and any other data which may improve this document should be sent to: Defense Electronics Supply Center
9、, ATTN: DESC-ELDI, 1507 Wilmington Pi.ke, Dayton, OH (513) 296-8868. 45444-5765, or telephone (513) 296-5391, or facsimile (FAX) AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5935 Provided by IHSNot for ResaleNo reproduction or networking permitted wi
10、thout license from IHS-,-,-A-A-55165 9999974 0367885 809 . r A-A-55165 TABLE i 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- A-A-5.5165 = 74 03b7886 745 A - A -55165 I SINGLE FIGURE 1. Printed board layout. 3.8 Vibration. The connector, or hardw
11、are when assembled to the connector, shall exhibit no evidence of breaking, cracking, or loosening of parts when subject to vibration of 10-55-10 Hz traversed in 1 minute at .O6 inch total excursion for 2 hours in each of 3 mutually perpendicular planes. 3.9 Physical shock. The connector or hardware
12、 when assembled to the connector, shall exhibit no evidence of breaking, cracking, or loosening of parts when subject to 50 gs sau-tooth wave shock of 11 milliseconds duration, 3 shocks in each direction applied along the 3 mitually perpendicular planes for a total of 18 shocks. 3.10 Durability. The
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