CECC 90 104- 125 ISSUE 1-1981 BS CECC 90 104-125 Silicon Complementary MOS with (B) Buffered Outputs and Cavity Packaging (En)《BS CECC 90 104-125 带(B)缓冲输出腔体封装封装的硅互补式金属氧化物半导体(英文)》.pdf

《CECC 90 104- 125 ISSUE 1-1981 BS CECC 90 104-125 Silicon Complementary MOS with (B) Buffered Outputs and Cavity Packaging (En)《BS CECC 90 104-125 带(B)缓冲输出腔体封装封装的硅互补式金属氧化物半导体(英文)》.pdf》由会员分享，可在线阅读，更多相关《CECC 90 104- 125 ISSUE 1-1981 BS CECC 90 104-125 Silicon Complementary MOS with (B) Buffered Outputs and Cavity Packaging (En)《BS CECC 90 104-125 带(B)缓冲输出腔体封装封装的硅互补式金属氧化物半导体(英文)》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、KCECCtSO 104-125*IS*1 81 1974499 OOL0504 263 m BRITISH STANDARDS INSTITUTION 2 PARK STREET, LONDON. WIA 2BS Specification available from:- AS SHOWN IN PD 9002 AND CECC O0 200 AND ELECTRONIC COMPONENTS OF ASSESSED QUALITY DETAIL SPECIFICATION IN ACCORDANCE WITH: BS CECC 90 O00 : 1976 BS CECC 90 100 :

2、 1977 Outline not to scale: Isometric projection Marking information see page 7 For detail dimensions see IEC 191-2 (A50B) BS CECC 90 104 - 125 ISSUE 1 DECEMBER 1981 Page 1 of 23 pages MANUFACTURERS TYPE NUMBER 4030B SEE PD 9002 AND CECC O0 200 For ordering information see page 8 QUAD EXCLUSIVE-OR G

3、ATE SILICON COMPLEMENTARY MOS. WITH (B) BUFFERED OUTPUTS AND CAVITY PACKAGING. Assessment levels R, S, T and V and optional screening categories A, B, C and D CAUTION: THESE ARE STATIC SENSITIVE DEVICES - See clause 1.11 1. 1.1 1.2 1.3 1.4 Limiting conditions of use (not for inspection purposes) All

4、 voltages referenced to V ss Maximum supply voltage, positive Maximum supply voltage, negative Maximum positive input voltage Maximum negative input voltage +18 ,ov VI VDD +O,5V DD DD -0,5v -0 , 5V Refer to Qualified Products List PD 9002 and/or CECC O0 200 for details of manufacturers approved to t

5、his specification -1- BS CECC 90 104 - 125 Issue 1 Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-kCECC*SO LOV-L25*IS*L 81 W 1774499 0010505 1TT W 1 200, omw 50, OmW 10,omA 10

6、,omA Limiting conditions of use (contd) I. 1.5 Maximum power dissipation, per package per output D1 D2 I II 1.6 Maximum continuous current into any input. 1.7 Maximum continuous current into any output * I 1.8 1 Operating temperature range T Full -55 to +125OC Limited -40 to + 85OC am- 1.9 1.10 Stor

7、age temperature range Transient energy rating -65 to +15OoC 400V at LOOpF through 1,5kSZ 1.11 1.11.1 I Recommended handling precautions Store devices in either conductive foam or conductive rails, or connect all leads together using a similar electrical shorting method. 1.11.2 1.11.3 1.11.4 1.11.5 U

8、se grounded tip soldering irons. Ground all test equipment. ss Connect all unused device inputs to VDD or V PC boards used to mount MOS devices should have all metal leads grounded during device mounting or flow soldering operations. 1.11.6 Soldering equipment, solder pots or flow soldering equipmen

9、t should be grounded whenever in contact with PC boards and/or MOS devices. 1.11.7 Do not use ungrounded automatic insertion equipment or other handling equipment that precludes the use of suitable device lead grounding techniques during inspection or handling. 1.11.8 When PC boards containing mount

10、ed MOS devices are removed from equipment for test, shipping or storage, Dummy connectors should be used to electrically short all PC board terminals together. 1.11.9 1.11.10 Switch off power supply before inserting or removing devices from circuits. Disconnect all low impedance equipment and input

11、signals from the device before d.c. power supplies are switched off. -2 BS CECC 90 104 - 125 Issue 1 Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-kCECC*SO 104-125*IS*l 1 197

12、4499 0010506 036 2. Recommended conditions of use and associated characteristics (not for inspection purposes) These apply over the operating temperature range unless otherwise stated. Ail voltages referenced to V ss - Unit Characteristics DD (V v Conditions VIL = ov IH - DI) - Outputs open circuit

13、Symbol IDDA IDDA IDDA I DDA IDDA IDDA Tamb = 25OC 190 2,o 490 490 890 16,O 0,05 0,05 0,05 HIGH 30,O 60,O 120, o 30,O 60,O 120, o Quiescent device current Full temperature range 590 10,o i5,o 530 10, o 15,O 590 10,o 15,O 590 10,o 15,O Limited temperature range VIL = ov IH - DD - O, 05 0,05 0,05 LOW l

14、evel output voltage at IIoI 1,OriA 0,05 0,05 O, 05 4,95 9,95 14,95 o, 5 190 195 HIGH level output voltage at IIoI 1,OriA VIL = ov IH DD 4,95 9,95 14,95 4,95 9,95 14,95 OHB LOW level output voltage (for Worst case combinations) at IIo/ 1,OPA VIL = 1,5V VIL = 3,OV VIL = 4,ov 590 10,o 15,O HIGH level o

15、utput voltage (for worst case combinations) at IIoI 1,OriA VIH = 3,5v VIH = 7,ov VIH = l1,OV 5 ,o 10,o 15,O 495 990 L3,5 V V V 495 990 13,5 O, 51 1,30 3,40 O, 44 1,lO 3,OC - 4,5 990 13,5 O, 36 o, 90 2,40 O, 36 0,90 o t. n OHB Output LOW (sink) current Full temperature range mA mA mA mA mA Vo = 0,4V

16、vo = 0,5v Vo = 1,5V Vo = 0,4V Vo = 0,5V Vo = 1,5V 0,64 1,60 4,26 0,52 1,30 3,60 590 10,o 15,O 590 10,o 15,O IOLB IOLB IOLB IOLB IOLB IOLB Limited temperature range -3- BS LJXCYU LU4 - 125 Issue 1 Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleN

17、o reproduction or networking permitted without license from IHS-,-,-kCECC*SO L04-L25*IS*L 81 m II974499 0010507 T72 m CL = 50pF (Test conditions as in Sub-group 15 1 I Characteristics Tamb HIGil 0,14 0,35 1,lO 0,12 0,30 l,oo 1,00 1,OO - 190 2,o 295 1,o 290 2,s Output HIGH (source) current Full tempe

18、rature range 1 Unit mA mA mA mA mA mA PA MA PF V V V V V V Limited temperature range 0,25 0,62 1,80 0,2 0,5 1,4 0,lO 0,30 Input leakage current 0, 0,5 1,5 0,16 0,40 1,20 0,lO 0,30 Full temperature range Limited temperature range - 1 ,o 2,o 2,s l,o 2,o 2,5 Input capacitance per unit load (Any input 1

19、 795 130 2,o 2,5 l,o 2,o 2,s Noise margin at LOW level output (equal to the difference between VIL and VOL for worst case combinations) Noise margin at HIGH level output (equal to the difference between VIH and VoH for worst case combinations) Propagation and Trans it ion Time 8 Conditions Vo = 4,6V

20、 Vo = 13,5V Vo = 4,6V Vo = 13,5V vo = 9,5v vo = 9,5v VIL = ov IH = DD VI = ov f - 1MHz I OHB OHB OHB OHB OHB OHB -I -I -I -I -I -I 5,0 10,o 15,O 590 10,o 15,O 15,o ILJ I 150 IA %LB %LB . NLB 5,o 10,o 15,o hm vNHB v“B 5,0 10,o 15,O LOW Tamb = 25C -4- BS CECC 90 104 - 125 Issue 1 Copyright CENELEC Ele

21、ctronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-kCECC*90 LOY-L25*IS*L 82 W 2974499 OOI10508 909 W Symbol t / PHLA tPLHA O DD(V) 5,O V LOW - 10,o - 15,O - Characteristics I Conditions t / THLA t Pro

22、pagation Delay Time HIGH to LOW and LOW to HIGH level any input to any output Transition Time HIGH to LOW and LOW to HIGH level - 5,O 10,o - 15,O - Input Capacitance I I d2-L Input Terminal identification A1 q p 11 JA- -*I Inspection requirements - IL - s-4 s-4 - s -3 s-3 - s-4 na - s -4 na Limits A

23、ll dimensions in millimetres A - 5,l max. Al - 0,51 min. b - 0,38 min. 0,59 max. C - 0,20 min. 0,36 max. e - 2,54 TP L - 2,54 min. Z - 2,5.4 max. 4.6.10.1 4.6.9.1 4.6.9.2 4.6.9.1 4.6.9.2 Same as for Sub-groups A2 and A3 Same as for Sub-groups 112 and A3 BS CECC 9(11Q4 - 125 Issue 1 Copyright CENELEC

24、 Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-tCECC*SO 104-125*IS*L 81 W 1974499 0010522 289 W Examination or test CECC 90 000 clause No. Inspection requirements - D or ND ND Test conditions

25、Limits n - 18 - 18 1 na - 18 43 - 18 Sub-group C1 Dimensions See 4.3 In accordance with IEC 191-2 Type A50B for 14 lead dual-in-line packages All dimensions not measured in Sub-group B1 Sub-group C2 Res ist ance to cleaning solvents See 4.4 ND D D D Test XA Sub-group C3 Robustness of terminat ions S

26、ee 4.6.12.2 F = 2,5N No broken te rminat ions Sub-group C4 Resistance to so Ide ring heat See 4.6.11 followed by change of temperature See 4.6.8.1 Endpoint tests Fine leak See 4.6.9.1 Gross leak See 4.6.9.2 Electrical tests T = +150C Test Na TLOW = -65C = +15OoC T 5 cycles Test Qk 4.6.9.1 Test Qc 4.

27、6.9.2 Same as for Sub-groups A2 and A3 Same as for Sub-groups A2 and A3 3 - Sub-group C5 Shock See 4.6.4 Pulse acceleration = 14 7OOms* Pulse durations = 0,5m: Applied in.3 mutual perpendicular axes, approximately 12 cycle: in each direction Vibration swept frequency See 4.6.5 Acceleration, steady s

28、tate See 4.6.7 196 000ms-* axes Y1, Y: 19 - BS CECC 90 104 - 125 Issue 1 Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-KCECCxqO 104-125+ISSl 81 = 1974499 0010523 115 Examinat

29、ion or test CECC 90 000 clause No. Sub-group C5 (con td) D or m D - - D 7 inspection requirements Test conditions - P - n - C Limit s Endpoint tests Fine leak See 4.6.9.1 Gross leak See 4.6.9.2 Electrical tests 4.6.9.1 Test Qk 4.6.9.2 Test Qc Same as for Sub-groups A2 and A3 Same as for Sub-groups A

30、2 and A3 Sub-group C6 Damp heat, steady state See 4.6.2 Endpoint tests Electrical tests Condition 1 56 days Same as for Sub-groups A2 and A3 Same as for Sub-groups A2 and A3 7 na 43 - na 3 - na Sub-group C7 Sub-group C8 Electrical endurance See CECC 90 100 4.2 Endpoint tests Electrical tests Conditi

31、ons as for Sub-group B5, except duration = 1000 hrs min. Same as for Sub-groups A!, A3 and A5 Same as for Sub-groups A2, A3 and A5 3 na na - 18 na na - 1 na na 7 Sub-group C9 Storage at max. storage temperature See 4.6.1.1 Endpoint tests Electrical tests T = +150C 1000h Same as for Sub-groups A2, A3

32、 and A5 Same as for Sub-groups A2, A3 and A5 BS CECC 90 104 - 125 Issue 1 20 - Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-rCECC*SO L04-L25*IS*L 81 m 1974499 OOL0524 051 m

33、- D or ND Inspection requirements Examination or test CECC 90 O00 clause No. Test conditions - n - C - 1 nz nz - na na na 1 - - .- na 1 - na 1 - - - - Limits Sub-group C10 Storage at min. storage temperature See 4.6.1.2 18 na na - na na T = 765C 1000h Endpoint tests Electrical tests Same as for Sub-

34、groups A2, A3 and A5 Same as for Sub-groups A2 , A3 and A5 Sub-group Cllb na 18 - na 18 - ia Sub-group C12a Static characteristics at max. operating temperature - - Tmb max. Tamb Same as for Sub-group A4 a .- Tmb min. - Tamb Same as for Sub-group A4b Sub-group C12b Static characteristics at min. ope

35、rating temperature Sub-group C13 Same as .for Sub-group A4b 18 Sub-group C14 Transient energy rating See CECC 90 100 4.1.9 400V 100pF 1,5kS2 See CECC 90 100 4.1.9 Group D !O Sub-group D1 Electrical endurance See CECC 90 100, 4.2 Endpoint tests Same as for Sub-group B5 Duration = 8000h min. See CECC

36、90 100 4.2 Electrical tests Same as for Sub-groups A2, A3 and A5 Same as for Sub-groups A2, A3 and A5 At tributes information for B2, 3, 4, 5. c3, 4, 5, 6, 7, 8, 9, 10. neasurement information is required for C8 and 31. 21 - BS CECC 90 104 - 125 Issue 1 Copyright CENELEC Electronic Components Commit

37、tee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-KCECC*SO L04-L25*IS*L 151 = 1974499 0010525 T9 HIGH TEMPERATURE HIGH TEMPERATURE HIGH TEMPERATURE STORAGE STORAGE STORAGE 150C for 24 hours 150C for 24 hours 150C for 24 hour

38、s 1 I I RAPID CHANGE OF RAPID CHANGE OF RAPID CHANGE OF TEMPERATURE TEMP ERATU RE TEM PERATU RE 10 cycles 10 cycles 10 cycles -65C to +150“C -65C to +15OoC -65C to +150C A Appendix Al Ai.1 Screening procedure Production batches submitted for 100% screening shall be rejected if more than a total of 1

39、0% of the devices in the batch fail the electrical test requirements subsequent to the burn-inscreen in levels A, B and D. r I PRODUCTION B-1 . SCREENING LEVEL A Internal visual examina t ion* Level A FINAL ELECTRICAL TESTS at 25OC as per Sub-groups -u, A3 SCREENING LEVEL B i PRE-CAP I NSPECTI ON In

40、ternal visual examinat ion* Level B - SCREENING LEVEL C A PRE-CAP INSPECTION Internal visual examinat ion* Level B L 14 700 m/s2 ACCELERATION STEADY LEVEL 294 O00 m/c2 r Directions Y1. Y2* ACCELERATION STEADY LEVEL 294 O00 m/s2 Direction Y2* ACCELERATION STEADY LEVEL 294 O00 m/c2 Direction Y2* 1 ELE

41、CTRICAL TESTS ELECTRICAL TESTS at 25C as per Sub-groups A2, A3 Sub-groups A2, A3 at 25C as per I I BURN-IN SCREEN BURN-IN SCREEN 240 hr.min. at 125C 160 hr. min. at 125C ELECTRICAL TESTS at 25C as per Sub-groups A2, A3 BURN- IN SCREEN REVERSE BIAS 72 hrs. min. at 153C I FINAL ELECTRICAL TESTS at 25C

42、 as per Sub-groups , I FINAL ELECTRICAL TESTS at 25C as per Sub-groups A2, A3 FINAL ELECTRICAL TESTS at 25C as per Sub-groups SCREENING LEVEL D ELECTRICAL TESTS at 25C as per I BURN-IN SCREEN 160 hr. min. at 125C - 22 - BS CECC 90 104 - LL) Issue 1 Copyright CENELEC Electronic Components Committee P

43、rovided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-KCECC*SO 104-125*1S*1 1 1974499 0030526 924 Appendix Al (contd) Al.l Screening procedure (contd) *As detailed to 1.2.9,2 of BS 9400 (To be superseded by CECC procedure in Issue II

44、) *Direction Y2 is the acceleration which tends to separate the bonds +The device shall be radiographed in the x and y directions. The radiograph shall be examined for evidence of extraneous matter and assembly defects in the device. device for which the radiograph reveals any of the aforementioned defects shall be rej ec ted. A - 23 - BS CECC 90 104 - 125 - Issue 1 Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-