BS QC 750114-1996 Harmonized system of quality assessment for electronic components - Semiconductor devices - Discrete devices - Field-effect transistors - Blank detail specificatiw.pdf

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1、BRITISH STANDARD BS QC 750114:1996 IEC 747-8-3: 1995 Harmonized system of quality assessment for electronic components Semiconductor devices Discrete devices Field-effect transistors Blank detail specification for case-rated field-effect transistors for switching applications ICS 31.080.30BSQC 75011

2、4:1996 This British Standard, having been prepared under the direction of the Electrotechnical Sector Board, was published under the authority of the Standards Board and comes into effect on 15December1996 BSI 09-1999 ISBN 0 580 26500 5 National foreword This British Standard reproduces verbatim IEC

3、 747-8-3:1995, and implements it as the UK national standard. It is a harmonized specification within the IECQ system of quality assessment for electronic components. The standard is to be used in conjunction with BS QC700000:1991 and BSQC750100:1986. The UK participation in its preparation was entr

4、usted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: aid enquirers to understand the text; present to the responsible international/European committee any enquiries on interpretation, or proposals for change, and keep the UK interests informed; monitor related intern

5、ational and European developments and promulgate them in the UK. The British Standard which implements the IECQ Rules of Procedure is BS9000 General requirements for a system for electronic components of assessed quality Part 3:1991 Specification for the national implementation of the IECQ system. C

6、ross-references The British Standards which implement international or European publications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”. A British Standard does not purport to include all the necessary prov

7、isions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, pages i and ii, pages1to14 and

8、a back cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Amendments issued since publication Amd. No. Date CommentsBSQC 750114:1996 BSI 09-1999 i Contents Page National forewor

9、d Inside front cover Introduction 1 4 Limiting values 2 5 Electrical characteristics 4 6 Marking 5 7 Ordering information 5 8 Test conditions and inspection requirements 6 9 Group D Qualification approval tests 14 10 Additional information 14ii blankBSQC 750114:1996 BSI 09-1999 1 Introduction The IE

10、C quality assessment system for electronic components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as c

11、onforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank detail specification is one of a series of blank detail specifications for semi-conductor devices and shall be used with the fol

12、lowing IEC publications: 747-10/QC 700000 (1991): Semiconductor devices Discrete devices Part 10: Generic specification for discrete devices and integrated circuits. 747-11/QC 750100 (1985): Semiconductor devices Discrete devices Part11: Sectional specification for discrete devices. Required informa

13、tion Numbers shown in brackets on this and the following page correspond to the following items of required information, which should be entered in the spaces provided. Identification of the detail specification 1 The name of the national standards organization under whose authority the detail speci

14、fication is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any further information, if required by the national system. Identification of the comp

15、onent 5 Type of component. 6 Information on typical construction and applications. If a device is designed to satisfy several applications, this shall be stated here. Characteristics, limits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, or c

16、ontains hazardous materials, for example beryllium oxide, a caution statement shall be added in the detail specification. 7 Outline drawing and/or reference to the relevant document for outlines. 8 Category of assessed quality. 9 Reference data on the most important properties to permit comparison b

17、etween component types. Throughout this standard, the texts given in square brackets are intended for guidance to the specification writer and shall not be included in the detail specification. Throughout this standard, when a characteristic or rating applies, “” denotes that a value shall be insert

18、ed in the detail specification.BSQC 750114:1996 2 BSI 09-1999 4 Limiting values (absolute maximum system) These values apply over the operating temperature range, unless otherwise specified. Repeat only subclause numbers used, with title. Any additional values shall be given at the appropriate place

19、, but without subclause number(s). Curves should preferably be given under clause 10 of this standard. Name (address) of responsible NAI (andpossibly of body from which specification is available). 1 Number of IECQ detail specification, plusissuenumber and/or date. 2 ELECTRONIC COMPONENT OF ASSESSED

20、 QUALITY IN ACCORDANCE WITH: 3 National number of detail specification. 4 Generic specification: IEC 747-10/QC 700000 This box need not be used if national number repeats IECQ number. Sectional specification: IEC 747-11/QC 750100 and national references if different. DETAIL SPECIFICATION FOR: CASE-R

21、ATED FIELD-EFFECT TRANSISTORS FOR SWITCHING APPLICATIONS 5 Type number(s) of the relevant device(s). Ordering information: see clause 7 of this standard. Mechanical description 7 Short description 6 Outline references: IEC 191-2 mandatory if available and/or national if there is no IEC outline. Fiel

22、d-effect transistors for case-rated switching applications. Device type: Type A: Junction or Schottky gate Type B: Insulated-gate depletion Type C: Insulated-gate enhancement Semiconductor material: Si Polarity: N-channel or P-channel Encapsulation: cavity or non-cavity. Outline drawing may be trans

23、ferred to or given with more details in clause 10 of this standard. Terminal identification drawing showing pin assignments, including graphical symbols. CAUTION: Observe precautions for handling electrostatic sensitive devices if applicable. Marking: letters and figures, or colour code. The detail

24、specification shall prescribe the information to be marked on the device, if any. See subclause 2.5 of generic specification and/or clause6 of this standard. Polarity indication, if a special method is used. Categories of assessed quality From subclause 2.6 of the generic specification. 8 Reference

25、data 9 plus any important quick reference data: T amb , T case , voltage. Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List.BSQC 750114:1996 BSI 09-1999 3 Sub-clause Limiting values Symbol Type A Type B Type

26、 C Min. Max. Min. Max. Min. Max. 4.1 Minimum and maximum operating case temperature T case 4.2 Minimum and maximum storage temperatures T stg 4.3 Maximum drain-source voltage under specified conditions V DSX or V DSS or V DSR 4.4 Maximum reverse gate-source voltage (with V DS= 0) and, where appropri

27、ate, Maximum forward gate-source voltage, with V DS= 0 V GSS V GSS(F) 4.5 Maximum gate-drain voltage with source open-circuited V GDO 4.6 Maximum forward gate current I GF 4.7 Maximum drain current I D 4.8 Power dissipation Special requirements for ventilation and/or mounting shall be specified. 4.8

28、.1 Maximum total power dissipation as a function of temperature over the specified range of operating case temperatures or P totmax. 4.8.2 Maximum virtual junction temperature/channel temperature and absolute limit of power dissipation see note T vjmax. P totabs. 4.9 Safe operating area SOAR 4.10 Fo

29、r insulated-gate devices with separate source and substrate terminals: (ingeneral,devicesthatinclude gate-protection diodes do not require this to be specified). 4.10.1 Maximum gate-substrate voltage under specified conditions V GB 4.10.2 Maximum drain-substrate voltage under specified conditions V

30、DB 4.10.3 Maximum source-substrate voltage under specified conditions V SB NOTEWhen T vjmax. and P totabs. are specified R th(j-case)and, where appropriate, Z th(j-case)shall also be specified (see 5.7 and 5.8). BSQC 750114:1996 4 BSI 09-1999 5 Electrical characteristics See clause 8 of this standar

31、d for inspection requirements. Repeat only subclause numbers used, with title. Any additional characteristics shall be given at appropriate place but without subclause number(s). When several devices are defined in the same detail specification, the relevant values shall be given on successive lines

32、, avoiding repeating identical values. Curves should preferably be given under clause 10 of this standard. Sub-clause Characteristics and conditions at T case = 25 C unlessotherwise specified (see clause 4 of the generic specification) Symbol Types Tested A B C 5.1 Either: Maximum gate cut-off/leaka

33、ge current with source open-circuited, preferably at maximum rated gate-drain voltage V GDO I GDO(1) A2b or: Maximum gate cut-off/leakage current with drain short-circuited to source, preferably at maximum rated gate-source voltage V GSS I GSS(1) A2b or: Maximum gate cut-off/leakage current at speci

34、fied V DS , and specified V GSor I D I GSX A2b 5.2 Either: Maximum gate cut-off/leakage current with source open-circuited, at V GDpreferably between 65% and 85% of maximum rated V GDOand at a high temperature I GDO(2) C2b or: Maximum gate cut-off/leakage current with drain short-circuited to source

35、 at V GDpreferably between 65% and 85% of maximum rated V GSSand at a high temperature I GSS(2) C2b 5.3 Minimum and maximum gate-source cut-off voltage, at specified V DSand I D V GS(off) A2b Minimum and maximum gate-source threshold voltage, at specified V DSand I D V GS(TO) A2b Maximum drain-sourc

36、e voltage, at specified V GSand I D V DSon A2b 5.4 Minimum and maximum drain current, at V GS= 0 and at specified V DS(d.c. or pulse as specified) I DSS A2bBSQC 750114:1996 BSI 09-1999 5 6 Marking Any particular information other than that given in box 7 (clause 1) and/or 2.5 of the generic specific

37、ation shall be given here. 7 Ordering information The following minimum information is necessary to order a specific device, unless otherwise specified: precise type reference (and nominal voltage value, if required); Sub-clause Characteristics and conditions at T case =25 C unlessotherwise specifie

38、d (see clause 4 of the generic specification) Symbol Types Tested A B C 5.5 Minimum and maximum drain current, at specified V GSand V DS I D A2b 5.6 Maximum drain cut-off current, at specified V GS andV DS I DSX A2b 5.7 Maximum thermal resistance junction-to-case (when virtual channel temperature is

39、 quoted as a rating) R th(j-case) C2d 5.8 Maximum transient thermal impedance channel-to-case (when virtual channel temperature is quoted as a rating) Z th(j-case) C2d 5.9 Minimum and maximum drain-source on-state resistance, at specified I Dand V GS r DSon A2b 5.10 Minimum and maximum drain-source

40、off-state resistance, at specified V DSand V GS r DSoff A2b 5.11 Maximum switching times, in common-source configuration, preferably under the following specified conditions: output loading capacitance and resistance, C L and R L , input pulse transition times, amplitude, duration and repetition fre

41、quency, V GS(off-state) for types A and B greater than or equal to V GS(off) max. (as specified in 5.3), for type C lower than or equal to V GS(TO) min. (as specified in 5.3) V GS(on-state), at a specified high value of I D , V DS 5.11.1 Turn-on delay time t d(on) A4 5.11.2 Rise time and either: t r

42、 5.11.3 Turn-off delay time, and t d(off) 5.11.4 Fall time or:if t d(off)is negligible compared with t f t f 5.11.5 Turn-off time t (off) 5.12 Maximum small-signal common-source capacitances, at specified frequency, V DSand either V GS,or I D 5.12.1 Input capacitance C iss 5.12.2 Output capacitance

43、C oss C2a 5.12.3 Reverse transfer capacitance C rss BSQC 750114:1996 6 BSI 09-1999 IECQ reference of detail specification with issue number and/or date when relevant; category of assessment quality as defined in 3.7 of sectional specification and, if required, screening sequence as defined in 3.6 of

44、 sectional specification; any other particulars. 8 Test conditions and inspection requirements These are given in the following tables, where the values and exact test conditions to be used shall be specified as required for a given type, and as required by the relevant tests in the relevant publica

45、tion. The choice between alternative tests or test methods shall be made when a detail specification is written. When several devices are included in the same detail specification, the relevant conditions and/or values should be given on successive lines, avoiding, where possible, repeating identica

46、l conditions and/or values. Throughout the following text, reference to subclause numbers is made with respect to the generic specification unless otherwise stated and test methods are quoted from clause 4 of the sectional specification. For sampling requirements, either refer to, or reproduce, valu

47、es of 3.7 of sectional specification, according to applicable category(ies) of assessed quality. For group A, the choice between AQL or LTPD system shall be made in the detail specification.BSQC 750114:1996 BSI 09-1999 7 GROUP A Lot-by-lot LSL = Lower specification limit USL = Upper specification li

48、mit Inspection or test Symbol Reference Conditions at T case = 25 C unless otherwise specified (seeclause 4 of the generic specification) Inspection requirements limits Type A Type B Type C LSL USL LSL USL LSL USL Sub-group A1 External visual examination 4.2.1.1 a Sub-group A2a Inoperative To be specified Sub-group A2b Either: cut-off/leakage current I GDO(1) T-071 V GD= specified, preferably at V G