BS EN 62276-2016 Single crystal wafers for surface acoustic wave (SAW) device applications Specifications and measuring methods《表面声波(SAW)装置用单晶薄片 规格和测量方法》.pdf
《BS EN 62276-2016 Single crystal wafers for surface acoustic wave (SAW) device applications Specifications and measuring methods《表面声波(SAW)装置用单晶薄片 规格和测量方法》.pdf》由会员分享,可在线阅读,更多相关《BS EN 62276-2016 Single crystal wafers for surface acoustic wave (SAW) device applications Specifications and measuring methods《表面声波(SAW)装置用单晶薄片 规格和测量方法》.pdf(46页珍藏版)》请在麦多课文档分享上搜索。
1、Single crystal wafers for surface acoustic wave (SAW)device applications Specifications and measuring methodsBS EN 62276:2016BSI Standards PublicationWB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06National forewordThis British Standard is the UK implementation of EN 62276:2016. It is identi
2、cal to IEC 62276:2016. It supersedes BS EN 62276:2013 which iswithdrawn.The UK participation in its preparation was entrusted to Technical Committee EPL/49, Piezoelectric devices for frequency control and selection.A list of organizations represented on this committee can be obtained onrequest to it
3、s secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its correct application. The British Standards Institution 2016.Published by BSI Standards Limited 2016ISBN 978 0 580 89222 6ICS 31.140Compliance with a British Standard cann
4、ot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 31 December 2016.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62276:2016EUROPEAN STANDARD NORME EUROPENNE EUROPIS
5、CHE NORM EN 62276 December 2016 ICS 31.140 Supersedes EN 62276:2013 English Version Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2016) Tranches monocristallines pour applications utilisant des dispositifs ondes acoustique
6、s de surface (OAS) - Spcifications et mthodes de mesure (IEC 62276:2016) Einkristall-Wafer fr Oberflchenwellen-(OFW-)Bauelemente - Festlegungen und Messverfahren (IEC 62276:2016) This European Standard was approved by CENELEC on 2016-11-28. CENELEC members are bound to comply with the CEN/CENELEC In
7、ternal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to a
8、ny CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the o
9、fficial versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembour
10、g, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung CEN-CE
11、NELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 62276:2016 E BS EN 62276:2016EN 62276:2016 2 European foreword The text of document 49/1144/CDV, future edition 3 of IEC
12、 62276, prepared by IEC/TC 49 “Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection” was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 62276:2016. The following dates are fixed: latest date by which the
13、 document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2017-08-28 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2019-11-28 This document supersedes EN 62276:2013. Attention is d
14、rawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62276:2016 was approved by CENELEC as
15、a European Standard without any modification. IEC 61019-1 NOTE Harmonized as EN 61019-1. IEC 61019-2 NOTE Harmonized as EN 61019-2. IEC 61019-3 NOTE Harmonized as EN 61019-3. ISO 4287:1997 NOTE Harmonized as EN ISO 4287:1998. BS EN 62276:2016EN 62276:2016 3 Annex ZA (normative) Normative references
16、to international publications with their corresponding European publications The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest e
17、dition of the referenced document (including any amendments) applies. NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this anne
18、x is available here: www.cenelec.eu. Publication Year Title EN/HD Year IEC 60758 2016 Synthetic Quartz Crystal - Specifications and guidelines for use EN 60758 2016 ISO 2859-1 1989 Sampling procedures for inspection by attributes; part_1: sampling plans indexed by acceptable quality level (AQL) for
19、lot-by-lot inspection - - BS EN 62276:2016 2 IEC 62276:2016 IEC 2016 CONTENTS FOREWORD . 5 INTRODUCTION . 7 1 Scope 8 2 Normative references 8 3 Terms and definitions 8 3.1 Single crystals for SAW wafer . 8 3.2 Terms and definitions related to LN and LT crystals 9 3.3 Terms and definitions related t
20、o all crystals 9 3.4 Flatness 10 3.5 Definitions of appearance defects . 12 3.6 Other terms and definitions . 13 4 Requirements 14 4.1 Material specification 14 4.1.1 Synthetic quartz crystal . 14 4.1.2 LN . 15 4.1.3 LT 15 4.1.4 LBO, LGS 15 4.2 Wafer specifications 15 4.2.1 General . 15 4.2.2 Diamet
21、ers and tolerances 15 4.2.3 Thickness and tolerance 15 4.2.4 Orientation flat . 15 4.2.5 Secondary flat . 16 4.2.6 Back surface roughness 16 4.2.7 Warp . 16 4.2.8 TV5 or TTV 16 4.2.9 Front (propagation) surface finish 17 4.2.10 Front surface defects . 17 4.2.11 Surface orientation tolerance . 18 4.2
22、.12 Inclusions 18 4.2.13 Etch channel number and position of seed for quartz wafer . 18 4.2.14 Bevel . 18 4.2.15 Curie temperature and tolerance 18 4.2.16 Lattice constant . 18 4.2.17 Bulk resistivity (conductivity) for reduced LN and LT 19 5 Sampling plan 19 5.1 General . 19 5.2 Sampling. 19 5.3 Sa
23、mpling frequency 19 5.4 Inspection of whole population 19 6 Test methods . 19 6.1 Diameter . 19 6.2 Thickness . 20 6.3 Dimension of OF . 20 6.4 Orientation of OF 20 6.5 TV5 . 20 BS EN 62276:2016IEC 62276:2016 IEC 2016 3 6.6 Warp . 20 6.7 TTV 20 6.8 Front surface defects 20 6.9 Inclusions . 20 6.10 B
24、ack surface roughness 20 6.11 Orientation 20 6.12 Curie temperature . 20 6.13 Lattice constant 20 6.14 Bulk resistivity . 21 7 Identification, labelling, packaging, delivery condition 21 7.1 Packaging . 21 7.2 Labelling and identification 21 7.3 Delivery condition . 21 8 Measurement of Curie tempera
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