BS EN 62047-26-2016 Semiconductor devices Micro-electromechanical devices Description and measurement methods for micro trench and needle structures《半导体器件 微型机电装置 微槽和针孔结构的描述和测量方法》.pdf

《BS EN 62047-26-2016 Semiconductor devices Micro-electromechanical devices Description and measurement methods for micro trench and needle structures《半导体器件 微型机电装置 微槽和针孔结构的描述和测量方法》.pdf》由会员分享，可在线阅读，更多相关《BS EN 62047-26-2016 Semiconductor devices Micro-electromechanical devices Description and measurement methods for micro trench and needle structures《半导体器件 微型机电装置 微槽和针孔结构的描述和测量方法》.pdf（34页珍藏版）》请在麦多课文档分享上搜索。

1、BSI Standards PublicationSemiconductor devices Micro-electromechanical devicesPart 26: Description and measurement methods for micro trench and needle structuresBS EN 62047-26:2016National forewordThis British Standard is the UK implementation of EN 62047-26:2016.The UK participation in its preparat

2、ion was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its correct application. T

3、he British Standards Institution 2016.Published by BSI Standards Limited 2016ISBN 978 0 580 85309 8ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 31

4、May 2016. Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62047-26:2016EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM EN 62047-26 April 2016 ICS 31.080.99 English Version Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measu

5、rement methods for micro trench and needle structures (IEC 62047-26:2016) Dispositifs semiconducteurs - Dispositifs microlectromcaniques - Partie 26: Description et mthodes de mesure pour structures de microtranches et de microaiguille (IEC 62047-26:2016) Halbleiterbauelemente - Bauelemente der Mikr

6、osystemtechnik - Teil 26: Beschreibung und Messverfahren fr Mikro-Rillen und Nadelstrukturen (IEC 62047-26:2016) This European Standard was approved by CENELEC on 2016-02-11. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this

7、European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official

8、 versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnica

9、l committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slov

10、akia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2016 CE

11、NELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 62047-26:2016 E BS EN 62047-26:2016EN 62047-26:2016 2 European foreword The text of document 47F/233/FDIS, future edition 1 of IEC 62047-26, prepared by SC 47F “Micro-electromechanical s

12、ystems“, of IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-26:2016. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by en

13、dorsement (dop) 2016-11-11 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2019-02-11 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held respon

14、sible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62047-26:2016 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following note has to be added for the standard ind

15、icated : ISO 3274:1996 NOTE Harmonized as EN ISO 3274:1997 (not modified). BS EN 62047-26:2016 2 IEC 62047-26:2016 IEC 2016 CONTENTS FOREWORD . 4 1 Scope 6 2 Normative references 6 3 Terms and definitions 6 4 Description of trench structures in a micrometer scale . 7 4.1 General . 7 4.2 Symbols and

16、designations 7 4.3 Description . 9 5 Description of needle structures in a micrometer scale 9 5.1 General . 9 5.2 Symbols and designations 9 5.3 Description . 10 6 Measurement method 10 Annex A (informative) Examples of measurement for trench and needle structures in a micrometer scale . 11 A.1 Gene

17、ral . 11 A.2 Measurement for depth of trench 11 A.2.1 Field emission type scanning electron microscopy . 11 A.2.2 Coherence scanning interferometer (CSI) 12 A.2.3 Stylus surface profiler 14 A.2.4 Confocal laser scanning microscopy 16 A.2.5 Atomic force microscopy 17 A.3 Measurement for width of wall

18、 and trench at the upper surface of trench 18 A.3.1 Field emission type scanning electron microscopy . 18 A.3.2 Coherence scanning interferometer . 19 A.3.3 Stylus surface profiler 19 A.3.4 Confocal laser scanning microscopy 19 A.3.5 Optical microscopy 20 A.4 Measurement for side wall angle of trenc

19、h by field emission type scanning electron microscopy 20 A.4.1 Principle of measurement 20 A.4.2 Preparation of sample 21 A.4.3 Procedure of measurement 21 A.4.4 Measurable range 21 A.5 Measurement for wall and trench width at the bottom of trench by field emission type scanning ele microscopy . 21

20、A.5.1 Principle of measurement 21 A.5.2 Preparation of sample 21 A.5.3 Procedure of measurement 21 A.5.4 Measurable range 21 A.6 Measurement for geometry of needle 21 A.6.1 Field emission type scanning electron microscopy . 21 A.6.2 Atomic force microscopy 23 Annex B (informative) Uncertainty in dim

21、ensional measurement . 25 B.1 General . 25 B.2 Basic concepts 25 BS EN 62047-26:2016IEC 62047-26:2016 IEC 2016 3 B.3 Example of evaluating uncertainty of the average depth of trench . 25 B.3.1 Sample and measured data for evaluating uncertainty . 25 B.3.2 Source of uncertainty . 26 B.3.3 Type A eval

22、uation of standard uncertainty . 26 B.3.4 Type B evaluation of standard uncertainty . 26 B.3.5 Combined standard uncertainty . 26 B.3.6 Expanded uncertainty and result 26 B.3.7 Budget table 26 Bibliography 28 Figure 1 Schematic of example for trench structure in a micrometer scale and its cross sect

23、ion 7 Figure 2 Cross section of trench structure in a micrometer scale 8 Figure 3 Cross section of trench structure in a micrometer scale fabricated by a deep-reactive ion etching process with repeated deposition and etching of silicon 8 Figure 4 Schematic of typical needle structures formed of thre

24、e and four faces . 9 Figure 5 Front, side and top views of typical needle structures. 10 Figure A.1 FE-SEM image of trench structure with 5 m-wide wall and 5 m-wide trench . 12 Figure A.2 Schematic of CSI microscope comprising an equal-light-path interferometer . 13 Figure A.3 Measurability for dept

25、h of trench structure with a depth of D and a width of WTuusing a stylus surface profiler . 16 Figure A.4 Relationship between shape of AFM probe tip and trench structure 18 Figure A.5 Front, side and top views of typical needle structures tilted to the back side with 30 . 23 Figure A.6 Relationship

26、 between shapes of AFM probe tip and needle structure 24 Table 1 Symbols and designations of trench structure in a micrometer scale . 8 Table 2 Symbols and designations of needle structure in a micrometer scale . 10 Table A.1 Example of measured data of trench depth 12 Table A.2 CSI magnification (o

27、bjective lens/ imaging lens) for measurement of all trench . 14 Table B.1 Example of measured data of trench depth 25 Table B.2 Estimation of uncertainty in measurement 27 BS EN 62047-26:2016 4 IEC 62047-26:2016 IEC 2016 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTRO

28、MECHANICAL DEVICES Part 26: Description and measurement methods for micro trench and needle structures FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The ob

29、ject of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specificat

30、ions (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liai

31、sing with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters expres

32、s, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committe

33、es in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National

34、Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not

35、provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the

36、 latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever,

37、 whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications

38、is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IE

39、C 62047-26 has been prepared by subcommittee 47F: Microelectromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47F/233/FDIS 47F/239/RVD Full information on the voting for the approval of thi

40、s standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. BS EN 62047-26:2016IEC 62047-26:2016 IEC 2016 5 A list of all parts in the IEC 62047 series, published under the general title Semiconduc

41、tor devices Micro-electromechanical devices, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific publication. At

42、this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users shoul

43、d therefore print this document using a colour printer. BS EN 62047-26:2016 6 IEC 62047-26:2016 IEC 2016 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 26: Description and measurement methods for micro trench and needle structures 1 Scope This part of IEC 62047 specifies descriptions of

44、trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 m to 100 m; walls and trenches with respective widths of 5 m to 150 m; and a

45、spect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 m or larger, and with dimensions that fit inside a cube with sides of 100 m. This standard is applicable to the structural design o

46、f MEMS and geometrical evaluation after MEMS processes. 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest

47、 edition of the referenced document (including any amendments) applies. None. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 trench structure one or more rectangular structures engraved in a planar substrate, with a constant trapezoidal cros

48、s section profile 3.2 needle structure projecting structures with a pointed tip formed of three or more faces, formed on a planar substrate with the plane of symmetry in the vertical plane 3.3 wall and trench two or more of the trench structures arranged in parallel at regular intervals 3.4 scallop

49、irregularity formed cyclically in the side walls after a deep-reactive ion etching (DRIE) process with repeated deposition and selective etching of polymeric passivation layer and then etching of a silicon substrate BS EN 62047-26:2016IEC 62047-26:2016 IEC 2016 7 4 Description of trench structures in a micrometer scale 4.1 General This standard specified the method of indicating the cross-sectional geometry of trench structures with micrometer scale