BS EN 60747-16-1-2002 Discrete semiconductor devices and integrated circuits - Microwave integrated circuits - Amplifiers《分立的半导体器件和集成电路 微波集成电路 放大器》.pdf

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1、BRITISH STANDARD BS EN 60747-16-1: 2002 Semiconductor devices Part 16-1: Microwave integrated circuits Amplifiers The European Standard EN 60747-16-1:2002 has the status of a British Standard ICS 31.080.99; 31.200 NO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBS EN 60747-16-1

2、:2002 This British Standard, having been prepared under the direction of the Electrotechnical Sector Policy and Strategy Committee, was published under the authority of the Standards Policy and Strategy Committee on 18 March 2002 BSI 18 March 2002 ISBN 0 580 39237 6 National foreword This British St

3、andard is the official English language version of EN 60747-16-1:2002. It is identical with IEC 60747-16-1:2001. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: A list of organizations represented on this committee

4、 can be obtained on request to its secretary. From 1 January 1997, all IEC publications have the number 60000 added to the old number. For instance, IEC 27-1 has been renumbered as IEC 60027-1. For a period of time during the change over from one numbering system to the other, publications may conta

5、in identifiers from both systems. Cross-references Attention is drawn to the fact that CEN and CENELEC Standards normally include an annex which lists normative references to international publications with their corresponding European publications. The British Standards which implement these intern

6、ational or European publications may be found in the BSI Standards Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Find” facility of the BSI Standards Electronic Catalogue. A British Standard does not purport to include all the necessary provisio

7、ns of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on

8、 the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 45 and a back cover. T

9、he BSI copyright date displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. Date CommentsEUROPEAN STANDARD EN 60747-16-1 NORME EUROPENNE EUROPISCHE NORM February 2002 CENELEC European Committee for Electrotechnical Standardization Comit

10、Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2002 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-16-1:2002 E ICS 31.08

11、0.99 English version Semiconductor devices Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-16-1:2001) Dispositifs semiconducteurs Partie 16-1: Circuits intgrs hyperfrquences - Amplificateurs (CEI 60747-16-1:2001) Halbleiterbauelemente Teil 16-1: Integrierte Mikrowellen- Verstrker (I

12、EC 60747-16-1:2001) This European Standard was approved by CENELEC on 2002-02-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists

13、and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the resp

14、onsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Iceland, Ireland, It

15、aly, Luxembourg, Malta, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom.Foreword The text of document 47E/200/FDIS, future edition 1 of IEC 60747-16-1, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENEL

16、EC parallel vote and was approved by CENELEC as EN 60747-16-1 on 2002-02-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2002-11-01 latest date by which the national stand

17、ards conflicting with the EN have to be withdrawn (dow) 2005-02-01 Annexes designated “normative“ are part of the body of the standard. In this standard, annex ZA is normative. _ Endorsement notice The text of the International Standard IEC 60747-16-1:2001 was approved by CENELEC as a European Stand

18、ard without any modification. _ Page2 EN60747161:2002 BSI18March2002CONTENTS 1 Scope 5 2 Normative references. 5 3 Terminology. 5 4 Essential ratings and characteristics 7 4.1 General 7 4.2 Application related description 8 4.3 Specification of the function 9 4.4 Limiting values (absolute maximum ra

19、ting system) 10 4.5 Operating conditions (within the specified operating temperature range)12 4.6 Electrical characteristics12 4.7 Mechanical and environmental ratings, characteristics and data 14 4.8 Additional information14 5 Measuring methods 14 5.1 General .14 5.2 Linear (power) gain (G lin ).15

20、 5.3 Linear (power) gain flatness ( G lin )17 5.4 Power gain (G p ).18 5.5 (Power) gain flatness ( G p ) .18 5.6 (Maximum available) gain reduction ( G red ).19 5.7 Limiting output power (P o(ltg) ) 20 5.8 Output power (P o )21 5.9 Output power at 1 dB gain compression (P o(1dB) ).22 5.10 Noise figu

21、re (F)23 5.11 Intermodulation distortion (P n /P 1 ) (two-tone)25 5.12 Power at the intercept point (for intermodulation products) (P n(IP) ).27 5.13 Magnitude of the input reflection coefficient (input return loss) ( s 11 ).28 5.14 Magnitude of the output reflection coefficient (output return loss)

22、 ( s 22 ) 29 5.15 Magnitude of the reverse transmission coefficient (isolation) ( s 12 ) .33 5.16 Conversion coefficient of amplitude modulation to phase modulation ( (AM-PM) ) 34 5.17 Group delay time (t d(grp) ) .36 5.18 Power added efficiency37 5.19 nth order harmonic distortion ratio (P nth/ P 1

23、 ) .39 5.20 Output noise power (P N ) .40 5.21 Spurious intensity under specified load VSWR (P sp /P o )42 Annex ZA (normative) Normative references to international publications with their corresponding European publications45 Page3 EN60747161:2002 BSI18March2002Figure 1 Circuit for the measurement

24、s of linear gain.15 Figure 2 Basic circuit for the measurement of the noise figure23 Figure 3 Basic circuit for the measurements of two-tone intermodulation distortion 25 Figure 4 Circuit for the measurements of magnitude of input/output reflection coefficient (input/output return loss) 28 Figure 5

25、Circuit for the measurement of output reflection coefficient.31 Figure 6 Circuit for the measurement of isolation33 Figure 7 Basic circuit for the measurement of (AM-PM) 34 Figure 8 Circuit for the measurement of the power added efficiency.37 Figure 9 Circuit for the measurements of the nth order ha

26、rmonic distortion ratio 39 Figure 10 Circuit diagram for the measurement of the output noise power41 Figure 11 Circuit diagram for the measurement of the spurious intensity 43 Page4 EN60747161:2002 BSI18March2002SEMICONDUCTOR DEVICES Part 16-1: Microwave integrated circuits Amplifiers 1 Scope This p

27、art of IEC 60747 provides the terminology, the essential ratings and characteristics, as well as the measuring methods for integrated circuit microwave power amplifiers. 2 Normative references The following normative documents contain provisions which, through reference in this text, constitute prov

28、isions of this part of IEC 60747. For dated references, subsequent amend- ments to, or revisions of, any of these publications do not apply. However, parties to agreements based on this part of IEC 60747 are encouraged to investigate the possibility of applying the most recent editions of the normat

29、ive documents indicated below. For undated references, the latest edition of the normative document referred to applies. Members of IEC and ISO maintain registers of currently valid International Standards. IEC 60617-12:1997, Graphical symbols for diagrams Part 12: Binary logic elements IEC 60617-13

30、:1993, Graphical symbols for diagrams Part 13: Analogue elements IEC 60747-1:1983, Semiconductor devices Discrete devices Part 1: General IEC 60747-7:2000, Semiconductor devices Part 7: Bipolar transistors IEC 60748-2:1997, Semiconductor devices Integrated circuits Part 2: Digital integrated circuit

31、s IEC 60748-3:1986, Semiconductor devices Integrated circuits Part 3: Analogue integrated circuits IEC 60748-4:1997, Semiconductor devices Integrated circuits Part 4: Interface integrated circuits 3 Terminology 3.1 linear (power) gain G lin power gain in the linear region of the power transfer curve

32、 P o (dBm) = f(P i ) NOTE In this region, P o (dBm) = P i (dBm). 3.2 linear (power) gain flatness G lin power gain flatness when the operating point lies in the linear region of the power transfer curve 3.3 power gain G p G ratio of the output power to the input power NOTE Usually the power gain is

33、expressed in decibels. Page5 EN60747161:2002 BSI18March20023.4 (power) gain flatness G p difference between the maximum and minimum power gain for a specified input power in a specified frequency range 3.5 (maximum available) gain reduction G red difference in decibels between the maximum and minimu

34、m power gains that can be provided by the gain control 3.6 Output power limiting 3.6.1 output power limiting range range in which, for rising input power, the output power is limiting NOTE For specification purposes, the limits of this range are specified by specified lower and upper limit values fo

35、r the input power. 3.6.2 limiting output power P o(ltg) output power in the range where it is limiting 3.6.3 limiting output power flatness P o(ltg) difference between the maximum and minimum output power in the output power limiting range: P o(ltg)= P o(ltg,max) P o(ltg,min) 3.7 intermodulation dis

36、tortion P n /P i ratio of the output power of the nth order component to the output power of the fundamental component, at a specified input power 3.8 power at the intercept point (for intermodulation products) P n(IP) output power at intersection between the extrapolated output powers of the fundam

37、ental component and the nth order intermodulation components, when the extrapolation is carried out in a diagram showing the output power of the components (in decibels) as a function of the input power (in decibels) 3.9 magnitude of the input reflection coefficient (input return loss) s 11 see 3.5.

38、2.1 of IEC 60747-7 3.10 magnitude of the output reflection coefficient (output return loss) s 22 see 3.5.2.2 of IEC 60747-7 3.11 magnitude of the reverse transmission coefficient (isolation) s 12 see 3.5.2.4 of IEC 60747-7 Page6 EN60747161:2002 BSI18March20023.12 conversion coefficient of amplitude

39、modulation to phase modulation (AM-PM) quotient of the phase deviation of the output signal (in degrees) by the change in input power (in decibels) producing it 3.13 group delay time t d(grp) ratio of the change, with angular frequency, of the phase shift through the amplifier NOTE Usually group del

40、ay time is very close in value to input-to-output delay time. 3.14 nth order harmonic distortion ratio P nth /P 1 ratio of the power of the nth order harmonic component measured at the output port of the device to the power of the fundamental frequency measured at the output port for a specified out

41、put power 3.15 output noise power P N maximum noise power measured at the output port of the device within a specified bandwidth in a specified frequency range for a specified output power 3.16 spurious intensity under specified load VSWR P sp /P o ratio of the maximum spurious power measured at the

42、 output port of the device to the power of the fundamental frequency measured at the output port under specified load VSWR 4 Essential ratings and characteristics 4.1 General 4.1.1 Circuit identification and types 4.1.1.1 Designation and types The indication of type (device name), the category of th

43、e circuit and the technology applied should be given. Microwave amplifiers are divided into four categories: Type A: Low-noise type. Type B: Auto-gain control type. Type C: Limiting type. Type D: Power type. 4.1.1.2 General function description A general description of the function performed by the

44、integrated circuit microwave amplifiers and the features for the application should be made. Page7 EN60747161:2002 BSI18March20024.1.1.3 Manufacturing technology The manufacturing technology, for example, semiconductor monolithic integrated circuit, thin- film integrated circuit, micro-assembly, sho

45、uld be stated. This statement should include details of the semiconductor technologies such as MESFET, MISFET, Si bipolar transistor, HBT, etc. 4.1.1.4 Package identification The following statements should be made: a) IEC and/or national reference number of the outline drawing, or drawing of non-st

46、andard package including terminal numbering; b) principal package material; for example, metal, ceramic, plastic. 4.1.1.5 Main application The main application should be stated, if necessary. If the device has restrictive applications, these should be stated here. 4.2 Application related description

47、 Information on the application of the integrated circuit and its relation to the associated devices should be given. 4.2.1 Conformance to system and/or interface information It should be stated whether the integrated circuit conforms to an application system and/or interface standard or recommendat

48、ion. The detailed information about application systems, equipment and circuits such as VSAT systems, DBS receivers, microwave landing systems, etc., should also be given. 4.2.2 Overall block diagram A block diagram of the applied systems should be given, if necessary. 4.2.3 Reference data The most

49、important properties to permit comparison between derivative types should be given. 4.2.4 Electrical compatibility It should be stated whether the integrated circuit is electrically compatible with other particular integrated circuits or families of integrated circuits or whether special interfaces are required. Details should be given of the t