BS 6493-1 5-1992 Semiconductor devices - Discrete devices - Recommendations for optoelectronic devices - Section 5 Recommendations for optoelectronic devices《半导体器件 分立器件 光电器件的推荐性规程 .pdf

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1、BRITISH STANDARD BS 6493-1.5: 1992 IEC 60747-5: 1992 Incorporating Amendments Nos. 1 and 2 and Corrigendum No. 1 Semiconductor devices Part 1: Discrete devices Section 1.5 Recommendations for optoelectronic devices ICS 31.260 BS 6493-1.5:1992 This British Standard, having been prepared under the dir

2、ection of the Electronic Components Standards Policy Committee, was published under the authority of the Standards Board and comes into effect on 15 September 1992 BSI 27 March 2003 First published August 1985 Second edition September 1992 The following BSI references relate to the work on this stan

3、dard: Committee reference ECL/24 Draft for comment 87/31843 DC ISBN 0 580 21005 7 Committees responsible for this British Standard The preparation of this British Standard was entrusted by the Electronic Components Standards Policy Committee (ECL/-) to Technical Committee ECL/24, upon which the foll

4、owing bodies were represented: EEA (the Association of Electronics, Telecommunications and Business Equipment Industries) Electronic Components Industry Federation GAMBICA (BEAMA Ltd.) Ministry of Defence National Supervising Inspectorate Society of British Aerospace Companies Limited The following

5、bodies were also represented in the drafting of the standard, through subcommittees and panels: British Telecommunications plc Engineering Equipment and Materials Users Association Amendments issued since publication Amd. No. Date Comments 8704 November 1995 8957 May 1996 Indicated by a sideline in

6、the margin 14242 Corr. No. 1 27 March 2003 Addition of supersession details to national forewordBS 6493-1.5:1992 BSI 27 March 2003 i Contents Page Committees responsible Inside front cover National foreword vi Chapter I. General 1 1 Introductory note 1 2S c o p e 1 Chapter II. Terminology and letter

7、 symbols 3 1 Physical concepts 3 2 Types of devices 5 3G e n e r a l t e r m s 6 4 Terms related to ratings and characteristics 11 5 Letter symbols 22 Chapter III. Essential ratings and characteristics 23 Section 1. Light-emitting diodes 23 1T y p e 2 3 2 Semiconductor material 23 3C o l o u r 2 3 4

8、 Details of outline and encapsulation 23 5 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 23 6 Electrical characteristics 24 7 Supplementary information 24 Section 2. Infrared-emitting diodes 25 1T y p e 2 5 2 Semiconductor material 25 3 Detai

9、ls of outline and encapsulation 25 4 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 25 5 Electrical characteristics 25 6 Supplementary information 26 Section 3. Photodiodes 27 1T y p e 2 7 2 Semiconductor material 27 3 Details of outline and e

10、ncapsulation 27 4 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 27 5 Electrical characteristics 27 6 Supplementary information 28 Section 4. Phototransistors 29 1T y p e 2 9 2 Semiconductor material 29 3P o l a r i t y 2 9 4 Details of outlin

11、e and encapsulation 29 5 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 29 6 Electrical characteristics 30 7 Supplementary information 30BS 6493-1.5:1992 ii BSI 27 March 2003 Page Section 5. Photocouplers, optocouplers (with output transistor)

12、 31 1T y p e 3 1 2 Semiconductor material 31 3 Polarity of the output resistor 31 4 Details of outline and encapsulation 31 5 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 31 6 Electrical characteristics 33 7 Supplementary information 33 Sect

13、ion 6. Laser diodes 35 1T y p e 3 5 2 Semiconductor 35 3 Details of outline and encapsulation 35 4 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 35 5 Electrical and optical characteristics 35 6 Supplementary information 37 Section 7. Light-em

14、itting diodes and infrared-emitting diodes for fibre optic systems or subsystems 39 1T y p e 3 9 2 Semiconductor material 39 3 Details of outline and encapsulation 39 4 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 39 5 Electrical and optical

15、 characteristics 40 6 Supplementary information 41 Section 8. Laser module with pigtails 43 1T y p e 4 3 2 Semiconductor 43 3 Details of outline and encapsulation 43 4 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 43 5 Electrical and optical

16、characteristics 45 Section 9. Pin photodiodes for fibre optic systems or subsystems 47 1T y p e 4 7 2 Semiconductor material 47 3 Details of outline and encapsulation 47 4 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 47 5 Electrical and opti

17、cal characteristics 48 6 Supplementary information 48BS 6493-1.5:1992 BSI 27 March 2003 iii Page Section 10. Avalanche photodiodes (APDs) with or without pigtails 49 1T y p e 4 9 2 Semiconductor 49 3 Details of outline and encapsulation 49 4 Limiting values (absolute maximum system) over the operati

18、ng temperature range, unless otherwise stated 49 5 Electrical and optical characteristics 50 6 Supplementary information 50 Section 11. Visual inspection of monochrome matrix liquid crystal display modules 51 1G e n e r a l 5 1 2 Visual inspection of displays 51 Section 12. Liquid crystal display ce

19、lls (LCD cells) 55 (Excluding active matrix LCD and multicolour cells) 1T y p e 5 5 2 Principle and material used 55 3 Mode of operation 55 4 Details of outline 55 5 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 55 6 Electrical and optical ch

20、aracteristics 56 7 Supplementary information 56 Section X. Visual inspection of monochrome liquid crystal display cells 1) 57 1S c o p e 5 7 2G e n e r a l 5 7 3 Visual inspection of displays 57 4 Seal inspections 59 5 Visual inspection of contact pad areas 59 6 Visual inspection for chipped materia

21、l at the borders and edges of the support plates of cells 59 Chapter IV. Measuring methods 63 1 Measuring methods for photoemitters 63 2 Measuring methods for photosensitive devices 91 3 Measuring methods for photocouplers 110 4 Measuring methods for liquid crystal display devices 122 1) See nationa

22、l foreword for details of textual error.BS 6493-1.5:1992 iv BSI 27 March 2003 National foreword This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee. It is identical with IEC Publication 747-5:1993 Semiconductor devices. Discrete devices

23、 and integrated circuits Part 5: Optoelectronic devices as amended by Amendment 1:1994 and Amendment 2:1995, published by the International Electrotechnical Commission (IEC). When preparing IEC Amendment 2 for incorporation into this document, an error was discovered in the Section numbering of the

24、new material that it introduced. Pending the publication of a new edition of IEC 747-5, this material has been termed “Section X” and introduced at the end of Chapter 3. This British Standard constitutes Section 1.5 of the British Standard for semiconductor devices (BS 6493). (See national foreword

25、of BS 6493-1.1:1984.) It supersedes BS 6493-1.5:1985 which is withdrawn. It is partiallly superseded by BS EN 62007-1:2000 and BS EN 62007-2:2000. Cross-references The British Standards which implement international publications referred to in this document may be found in the BSI Catalogue under th

26、e section entitled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. The Technical Committee has reviewed the provisions of IEC 306-1:1969, to which normative reference is made in the text, and has decide

27、d that they are acceptable for use in conjunction with this standard. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligatio

28、ns. Summary of pages This document comprises a front cover, an inside front cover, pages i to vi, pages 1 to 129 and a back cover. The BSI copyright notice displayed in this document indicates when the document was last issued.BS 6493-1.5:1992 BSI 27 March 2003 1 Chapter I. General 1 Introductory no

29、te As a rule, it will be necessary to use Publication 747-1 together with the present standard. In 747-1, the user will find all basic information on: terminology; letter symbols; essential ratings and characteristics; measuring methods; acceptance and reliability. 2 Scope This standard applies to t

30、he following categories or sub-categories of devices: Semiconductor photoemitters, including: light-emitting diodes (LEDs); infrared-emitting diodes (IREDs); laser diodes and laser-diode modules; optoelectronic displays (under consideration). Semiconductor photoelectric detectors, including: photodi

31、odes; phototransistors. Semiconductor photosensitive devices, including: photoresistors, photoconductive cells; photothyristors (under consideration). Semiconductor devices utilizing optical radiation for internal operation, including: photocouplers, optocouplers. The sequence of the different chapt

32、ers is in accordance with Publication 747-1, Chapter III, subclause 2.1.2 blankBS 6493-1.5:1992 BSI 27 March 2003 3 Chapter II. Terminology and letter symbols NOTE A number of additional terms of interest for optoelectronic devices, e.g. for radiometric, photometric and spectrophotometric quantities

33、, appear in chapter 845 of the IEV, which supersedes chapter 45. 1 Physical concepts 1.1 (Electromagnetic) radiation (IEV 845-01-01) 1) Emission or transfer of energy in the form of electromagnetic waves with the associated photons. 2) These electromagnetic waves or these photons. 1.2 Optical radiat

34、ion (IEV 845-01-02) Electromagnetic radiation of wavelengths lying between the region of transition to X-rays ( 1n m ) a n d t h e region of transition to radio waves ( 1nm). 1.3 Visible radiation (IEV 845-01-03) Any optical radiation capable of causing a visual sensation directly. NOTE There are no

35、 precise limits for the spectral range of visible radiation since they depend upon the amount of radiant power available and the responsivity of the observer. The lower limit is generally taken between 360 nm and 400 nm and the upper limit between 760 nm and 830 nm. 1.4 Infrared radiation (IEV 845-0

36、1-04, specialized) Optical radiation for which the wavelengths are longer than those for visible radiation. 1.5 Ultraviolet radiation (IEV 845-01-05, specialized) Optical radiation for which the wavelengths are shorter than those for visible radiation. 1.6 Light (IEV 845-01-06, without note 2 which

37、is not relevant) 1.6.1 Perceived light (see IEV 845-02-17) 1.6.2 Visible radiation (see IEV 845-01-03) NOTE Concept 2 is sometimes used for optical radiation extending outside the visible range, but this usage is not recommended. 1.7 Photoelectric effect (from IEV 845-05-33: photoelectric detector)

38、Interaction between optical radiation and matter resulting in the absorption of photons and the consequent generation of mobile charge carriers, thereby generating an electric potential or current, or a change in electrical resistance, excluding electrical phenomena caused by temperature changes. 1.

39、8 Liquid crystal display devices 1.8.1 Alignment layer A thin layer deposited over the patterned electrodes that determines the direction of the director at the surface. This layer produces the desired ordering. Alignment such as homeotropic alignment (1.8.14) or planar alignment (1.8.15) are achiev

40、ed by the co-operative ordering of the liquid crystal molecules locally affected by the surface forces. The alignment layer is generating the pretilt angle (1.8.20). 1.8.2 Chiral phase A liquid crystal phase exhibiting a spontaneous twist. 1.8.3 Cholesteric phase A liquid crystal phase that exhibits

41、 planar nematic ordering in which the directors form a helix that has its axis perpendicular to the plane. 1.8.4 Clearing point The phase transition temperature of a liquid crystal for transition toward the isotropic phase. 1.8.5 Dichroic liquid crystal A liquid crystal exhibiting dichroism, i.e. th

42、e property of anisotropic absorption of light.BS 6493-1.5:1992 4 BSI 27 March 2003 Chapter II 1.8.6 Director The axial unit vector describing the local axis of symmetry for the orientational distribution function of any chosen molecular axis of a liquid crystal. The director co-ordinates define the

43、local alignment of the liquid crystal. 1.8.7 Disclination A localized alignment defect (appearing generally under the form of closed or open lines) forming the border between areas exhibiting different alignment states. 1.8.8 Discotic mesophase A liquid crystal phase of disc-like shaped molecules ex

44、hibiting a long range ordering with respect to the short molecular axis. 1.8.9 Dynamic scattering An electro-optical effect showing a light scattering caused by turbulent motion in a liquid crystal layer induced by an electro-hydrodynamic effect. 1.8.10 Electrically controlled birefringence An elect

45、ro-optical effect caused by the birefringence of a liquid crystal layer which can be modulated (varied) by an electric field. It is also called “tunable birefringence”. 1.8.11 Electrode layer An electrically conductive layer, usually transparent (e.g. made of indium tin oxide, “ITO”), covering the s

46、upport plates and patterned to establish the display and electrical contact configuration. 1.8.12 Ferroelectric liquid crystal A liquid crystal phase exhibiting a spontaneous electric polarization. NOTE This effect is commonly exhibited in chiral smectic liquid crystal. 1.8.13 Guest-host effect An a

47、nisotropic optical absorption effect occurring in a dichroic liquid crystal layer containing a dissolved dye. 1.8.14 Homeotropic alignment The alignment state of a liquid crystal layer for which the director is everywhere nominally perpendicular to a support plate surface. 1.8.15 Planar alignment Th

48、e alignment state of a liquid crystal layer for which the director is everywhere nominally parallel to a support plate surface. This alignment is also referred to as homogeneous. 1.8.16 Liquid crystal A liquid crystal is a material that exhibits a mesophase consisting of elongated (rod-like) or disc

49、-like (discotic) molecules and that possesses at least one long range orientational ordering with respect to one molecular axis. 1.8.17 Liquid crystal cell A flat structure consisting of a minimum of two support plates with liquid crystal contained in the space between them. These plates are usually separated by a distance of several micrometers. 1.8.18 Mesophase (mesomorphic phase) An ordered state of matter between the crystalline and isotropic liquid phases, e