ASTM F1892-2012(2018) Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices《半导体器件电离辐射(总剂量)效应试验标准指南》.pdf

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1、Designation: F1892 12 (Reapproved 2018)Standard Guide forIonizing Radiation (Total Dose) Effects Testing ofSemiconductor Devices1This standard is issued under the fixed designation F1892; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revis

2、ion, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.INTRODUCTIONThis guide is designed to assist investigators in performing ionizing radiation effects testing ofsem

3、iconductor devices, commonly termed total dose testing. When actual use conditions, whichinclude dose, dose rate, temperature, and bias conditions and the time sequence of application of theseconditions, are the same as those used in the test procedure, the results obtained using this guideapplies w

4、ithout qualification. For some part types, results obtained when following this guide aremuch more broadly applicable. There are many part types, however, where care must be used inextrapolating test results to situations that do not duplicate all aspects of the test conditions in whichthe response

5、data were obtained. For example, some linear bipolar devices and devices containingmetal oxide semiconductor (MOS) structures require special treatment. This guide provides directionfor appropriate testing of such devices.1. Scope1.1 This guide presents background and guidelines forestablishing an a

6、ppropriate sequence of tests and data analysisprocedures for determining the ionizing radiation (total dose)hardness of microelectronic devices for dose rates below 300rd(SiO2)/s. These tests and analysis will be appropriate to assistin the determination of the ability of the devices under test tome

7、et specific hardness requirements or to evaluate the parts foruse in a range of radiation environments.1.2 The methods and guidelines presented will be applicableto characterization, qualification, and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated cir-cuits. They wi

8、ll be appropriate for treatment of the effects ofelectron and photon irradiation.1.3 This guide provides a framework for choosing a testsequence based on general characteristics of the parts to betested and the radiation hardness requirements or goals forthese parts.1.4 This guide provides for trade

9、offs between minimizingthe conservative nature of the testing method and minimizingthe required testing effort.1.5 Determination of an effective and economical hardnesstest typically will require several kinds of decisions. A partialenumeration of the decisions that typically must be made is asfollo

10、ws:1.5.1 Determination of the Need to Perform DeviceCharacterizationFor some cases it may be more appropriateto adopt some kind of worst case testing scheme that does notrequire device characterization. For other cases it may be mosteffective to determine the effect of dose-rate on the radiationsens

11、itivity of a device. As necessary, the appropriate level ofdetail of such a characterization also must be determined.1.5.2 Determination of an Effective Strategy for Minimizingthe Effects of Irradiation Dose Rate on the Test ResultTheresults of radiation testing on some types of devices arerelativel

12、y insensitive to the dose rate of the radiation applied inthe test. In contrast, many MOS devices and some bipolardevices have a significant sensitivity to dose rate. Severaldifferent strategies for managing the dose rate sensitivity of testresults will be discussed.1.5.3 Choice of an Effective Test

13、 MethodologyThe selec-tion of effective test methodologies will be discussed.1.6 Low Dose RequirementsHardness testing of MOS andbipolar microelectronic devices for the purpose of qualificationor lot acceptance is not necessary when the required hardnessis 100 rd(SiO2) or lower.1.7 SourcesThis guide

14、 will cover effects due to devicetesting using irradiation from photon sources, such as60Co irradiators,137Cs irradiators, and low energy (approximately10 keV) X-ray sources. Other sources of test radiation such as1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the d

15、irect responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved March 1, 2018. Published April 2018. Originallyapproved in 1998. Last previous edition approved in 2012 as F1892 12. DOI:10.1520/F1892-12R18.Copyright ASTM International, 100 Barr Harbor Drive,

16、 PO Box C700, West Conshohocken, PA 19428-2959. United StatesThis international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for theDevelopment of International Standards, Guides and Recommendations issue

17、d by the World Trade Organization Technical Barriers to Trade (TBT) Committee.1linacs, Van de Graaff sources, Dymnamitrons, SEMs, and flashX-ray sources occasionally are used but are outside the scopeof this guide.1.8 Displacement damage effects are outside the scope ofthis guide, as well.1.9 The va

18、lues stated in SI units are to be regarded as thestandard.1.10 This international standard was developed in accor-dance with internationally recognized principles on standard-ization established in the Decision on Principles for theDevelopment of International Standards, Guides and Recom-mendations

19、issued by the World Trade Organization TechnicalBarriers to Trade (TBT) Committee.2. Referenced Documents2.1 ASTM Standards:2E170 Terminology Relating to Radiation Measurements andDosimetryE666 Practice for Calculating Absorbed Dose From Gammaor X RadiationE668 Practice for Application of Thermolumi

20、nescence-Dosimetry (TLD) Systems for Determining AbsorbedDose in Radiation-Hardness Testing of Electronic DevicesE1249 Practice for Minimizing Dosimetry Errors in Radia-tion Hardness Testing of Silicon Electronic Devices UsingCo-60 SourcesE1250 Test Method for Application of Ionization Chambersto As

21、sess the Low Energy Gamma Component ofCobalt-60 Irradiators Used in Radiation-Hardness Testingof Silicon Electronic DevicesF996 Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Compo-nents Due to Oxide Trapped Holes and Interface StatesUsing the Subthresho

22、ld CurrentVoltage CharacteristicsF1467 Guide for Use of an X-Ray Tester (10 keV Photons)in Ionizing Radiation Effects Testing of SemiconductorDevices and MicrocircuitsISO/ASTM 51275 Practice for Use of a Radiochromic FilmDosimetry System2.2 Military Specifications:MIL-STD-883 , Method 1019, Ionizing

23、 Radiation (TotalDose) Test Method3MIL-STD-750 , Method 1019, Steady-State Total Dose Ir-radiation Procedure3MIL-HDBK-814 Ionizing Dose and Neutron Hardness As-surance Guidelines for Microcircuits and SemiconductorDevices33. Terminology3.1 For terms relating to radiation measurements anddosimetry, s

24、ee Terminology E170.3.2 Definitions of Terms Specific to This Standard:3.2.1 accelerated annealing test, nprocedure utilizing el-evated temperature to accelerate time-dependent growth andannealing of trapped charge.3.2.2 category A, nused to refer to a part containingbipolar structures that is not l

25、ow dose rate sensitive.3.2.3 category B, nused to refer to a part containingbipolar structures that is low dose rate sensitive.3.2.4 characterization, ntesting to determine the effect ofdose, dose-rate, bias, temperature, etc. on the radiation induceddegradation of a part.3.2.5 delayed reaction rate

26、 effect (DRRE), na time andtemperature dependent effect where the rate of degradation fora second irradiation is much greater than the rate of degrada-tion for the first irradiation after a delay time that is dependenton the temperature of the part during the time between the twoirradiations.3.2.6 e

27、nhanced low dose rate sensitivity (ELDRS), nusedto refer to a bipolar part that shows enhanced (greater)radiation induced damage for a fixed dose at dose rates belowabout 50 rd(SiO2)/s compared to damage at the same dose fordose rates of 50 rd(SiO2)/s. The enhancement may be a resultof true dose rat

28、e effects or time dependent effects, or both.3.2.7 gray, nthe gray (Gy) symbol, is the SI unit ofabsorbed dose, defined as 1 Gy = 1 J/kg (1 Gy = 100 rd).3.2.8 in-flux tests, nmeasurements made in-situ while thetest device is in the radiation field.3.2.9 in-situ tests, nelectrical measurements made o

29、ndevices during, or before-and-after, irradiation while theyremain in the irradiation location.3.2.10 in-source tests, nan in-flux test.3.2.11 ionizing radiation effects, nthe changes in theelectrical parameters of a microelectronic device resulting fromradiation-induced trapped charge.3.2.11.1 Disc

30、ussionIonizing radiation effects are some-times referred to as“ total dose effects.”3.2.11.2 DiscussionIn this guide, doses and dose rates arespecified in rd(SiO2) as contrasted with the use of rd(Si) inother related standards. The reason is that for ionizing radiationeffects in silicon based microe

31、lectronic components, it is theenergy deposited in the SiO2gate, field, and spacer oxides thatis responsible for the radiation-induced degradation effects. Forhigh energy irradiation, for example,60Co photons, the differ-ence between dose deposited in Si and SiO2typically isnegligible. For X-ray irr

32、adiation, approximately 10 keV photonenergy, the energy deposited in Si under some circumstancesmay be approximately 1.8 times the energy deposited in SiO2.For additional details, see Guide F1467.3.2.12 not in-flux test, nelectrical measurements made ondevices at any time other than during irradiati

33、on.3.2.13 overtest, na factor that is applied to the specifica-tion dose to determine the test dose level that the samples mustpass to be acceptable at the specification level. An overtestfactor of 1.5 means that the parts must be tested at 1.5 times thespecification dose.2For referenced ASTM standa

34、rds, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.3Available from the Standardization Documents Order Desk, Building 4, SectionD, 700 Robb

35、ins Ave., Philadelphia, PA 191115094.F1892 12 (2018)23.2.14 parameter delta design margin (PDDM), na designmargin that is applied to the radiation induced change in anelectrical parameter.3.2.14.1 DiscussionFor example, for a PDDM of 3 thechange in a parameter at a specified dose from the pre-irradi

36、ation value is multiplied by three and added to thepre-irradiation value to see if the sample exceeds the post-irradiation parameter limit. For example, if the pre-irradiationvalue of Ibis 30 nA and the post-irradiation value at 20krd(SiO2) is 70 nA (change in Ibis 40 nA), then for a PDDMof 3 the po

37、st-irradiation value would be 150 nA (30 nA + 3 X40 nA). If the allowable post-irradiation limit is 100 nAthe partwould fail.3.2.15 qualification, ntesting to determine the adequacyof a part to meet the requirements of a specific application.3.2.16 rad, nthe rad symbol, rd, is a commonly used unitfo

38、r absorbed dose, defined in terms of the SI unit of absorbeddose as 1 rd = 0.01 Gy.3.2.17 remote tests, nelectrical measurements made ondevices that are removed physically from the irradiationlocation for the measurements.3.2.18 time dependent effects (TDE), nthe time dependentgrowth and annealing o

39、f ionizing radiation induced trappedcharge and interface states and the resulting transistor or ICparameter changes caused by these effects.3.2.18.1 DiscussionSimilar effects also take place duringirradiation. Because of the complexity of time dependenteffects, alternative, but not inconsistent, def

40、initions may proveuseful. Two of these are: the complex of time-dependentprocesses that alter trapped oxide change (Not) and interfacetrap density (Nit) in an MOS or bipolar structure during andafter irradiation; and, the effects of these processes upon deviceor circuit characteristics or performanc

41、e, or both.3.2.19 true dose rate effect, na response that occurs duringlow dose rate irradiation that cannot be reproduced with a highdose rate irradiation followed by an equivalent time anneal.4. Summary of Guide4.1 This guide is designed to provide an introduction anddirection to the purposes, met

42、hods, and strategies of totalionizing dose testing.4.1.1 PurposesDevice or system hardness may be mea-sured for several different purposes. These may include devicecharacterization, device qualification, lot acceptance, linequalification, and studies of device physics.4.1.2 Methods:4.1.2.1 An ionizi

43、ng radiation effects test consists of per-forming a set of electrical measurements on a device, exposingthe device to ionizing radiation while appropriately biased, andthen performing a set of electrical measurements either duringor after irradiation.4.1.2.2 Because several factors enter into the ef

44、fects of theradiation on the device, parties to the test must establish andagree to a variety of conditions before the validity of the testcan be established or before the results of any one test can becompared with those of another. Conditions that must beestablished and agreed to include the follo

45、wing:(a) Radiation SourceThe type of radiation source (60Co,X-ray, etc.) that is to be used.NOTE 1The ionizing dose response of many device types has beenshown to depend on the type of ionizing radiation to which the device issubjected. The selection of a suitable radiation source for use in such a

46、testmust be based on the understanding that the gamma or electron radiationsource will induce a device response that then should be correlated to theresponse anticipated in the device application.(b) Dose Rate RangeThe range of dose rates within whichthe radiation exposures must take place (see 6.4)

47、.NOTE 2The response of many devices has been shown to be highlydependent on the rate at which the dose is accumulated. There must be ademonstrated correlation between the response of the device under theselected test conditions and the rate at which the device would be expectedto accumulate dose in

48、its intended application.(c) Operating ConditionsThe test circuit, electrical biasesto be applied, and the electrical operating sequence, ifapplicable, for the part during irradiation (see 6.3). Thisincludes the use of in-flux or not in-flux testing.(d) Electrical ParametersThe measurements that are

49、 to bemade on the test devices before, during (if appropriate), andafter (if appropriate) irradiation.(e) Time SequenceThe exposure time, the elapsed timebetween exposure and post-exposure measurements, and thetime between irradiations (see 6.5).(f) Irradiation LevelsThe dose(s) to which the test deviceis to be exposed between measurements (see Practice E666).(g) DosimetryThe dosimetry technique (TLDs,calorimeters, diodes, etc.) to be used. This depends to someextent on the radiation source selection.(h) TemperatureExposure, measurement