ASTM F1892-2012 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices《半导体器件电离辐射 (总剂量) 效应试验的标准指南》.pdf

《ASTM F1892-2012 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices《半导体器件电离辐射 (总剂量) 效应试验的标准指南》.pdf》由会员分享，可在线阅读，更多相关《ASTM F1892-2012 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices《半导体器件电离辐射 (总剂量) 效应试验的标准指南》.pdf（50页珍藏版）》请在麦多课文档分享上搜索。

1、Designation: F1892 06 F1892 12Standard Guide forIonizing Radiation (Total Dose) Effects Testing ofSemiconductor Devices1This standard is issued under the fixed designation F1892; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the

2、year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.INTRODUCTIONThis guide is designed to assist investigators in performing ionizing radiation effects testing ofsemiconducto

3、r devices, commonly termed total dose testing. When actual use conditions, whichinclude dose, dose rate, temperature, and bias conditions and the time sequence of application of theseconditions, are the same as those used in the test procedure, the results obtained using this guideapplies without qu

4、alification. For some part types, results obtained when following this guide aremuch more broadly applicable. There are many part types, however, where care must be used inextrapolating test results to situations that do not duplicate all aspects of the test conditions in whichthe response data were

5、 obtained. For example, some linear bipolar devices and devices containingmetal oxide semiconductor (MOS) structures require special treatment. This guide provides directionfor appropriate testing of such devices.1. Scope1.1 This guide presents background and guidelines for establishing an appropria

6、te sequence of tests and data analysis proceduresfor determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below 300 rd(SiO2)/s. Thesetests and analysis will be appropriate to assist in the determination of the ability of the devices under test to meet sp

7、ecific hardnessrequirements or to evaluate the parts for use in a range of radiation environments.1.2 The methods and guidelines presented will be applicable to characterization, qualification, and lot acceptance ofsilicon-based MOS and bipolar discrete devices and integrated circuits. They will be

8、appropriate for treatment of the effects ofelectron and photon irradiation.1.3 This guide provides a framework for choosing a test sequence based on general characteristics of the parts to be tested andthe radiation hardness requirements or goals for these parts.1.4 This guide provides for tradeoffs

9、 between minimizing the conservative nature of the testing method and minimizing therequired testing effort.1.5 Determination of an effective and economical hardness test typically will require several kinds of decisions. A partialenumeration of the decisions that typically must be made is as follow

10、s:1.5.1 Determination of the Need to Perform Device CharacterizationFor some cases it may be more appropriate to adoptsome kind of worst case testing scheme that does not require device characterization. For other cases it may be most effective todetermine the effect of dose-rate on the radiation se

11、nsitivity of a device. As necessary, the appropriate level of detail of such acharacterization also must be determined.1.5.2 Determination of an Effective Strategy for Minimizing the Effects of Irradiation Dose Rate on the Test ResultThe resultsof radiation testing on some types of devices are relat

12、ively insensitive to the dose rate of the radiation applied in the test. Incontrast, many MOS devices and some bipolar devices have a significant sensitivity to dose rate. Several different strategies formanaging the dose rate sensitivity of test results will be discussed.1.5.3 Choice of an Effectiv

13、e Test MethodologyThe selection of effective test methodologies will be discussed.1 This guide is under the jurisdiction of ASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space RadiationEffects.Current edition approved July 1, 2006July 1, 201

14、2. Published August 2006September 2012. Originally approved in 1998. Last previous edition approved in 20042006 asF1892 04.F1892 06. DOI: 10.1520/F1892-06.10.1520/F1892-12.This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes

15、 have been made to the previous version. Becauseit may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current versionof the standard as published by ASTM is to be considered the official

16、 document.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States11.6 Low Dose RequirementsHardness testing of MOS and bipolar microelectronic devices for the purpose of qualification orlot acceptance is not necessary when the required hardne

17、ss is 100 rd(SiO2) or lower.1.7 SourcesThis guide will cover effects due to device testing using irradiation from photon sources, such as 60Co girradiators, 137Cs g irradiators, and low energy (approximately 10 keV) X-ray sources. Other sources of test radiation such aslinacs, Van de Graaff sources,

18、 Dymnamitrons, SEMs, and flash X-ray sources occasionally are used but are outside the scope ofthis guide.1.8 Displacement damage effects are outside the scope of this guide, as well.1.9 The values stated in SI units are to be regarded as the standard.2. Referenced Documents2.1 ASTM Standards:2E170

19、Terminology Relating to Radiation Measurements and DosimetryE666 Practice for Calculating Absorbed Dose From Gamma or X RadiationE668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose inRadiation-Hardness Testing of Electronic DevicesE1249 Practice

20、for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60SourcesE1250 Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60Irradiators Used in Radiation-Hardness Testing of Silicon Electronic DevicesF996

21、 Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due toOxide Trapped Holes and Interface States Using the Subthreshold CurrentVoltage CharacteristicsE1467F1467 Specification for Transferring Digital Neurophysiological Data Between Independent C

22、omputer SystemsGuide forUse of an X-Ray Tester (10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits(Withdrawn 2004)ISO/ASTM 51275 Practice for Use of a Radiochromic Film Dosimetry System2.2 Military Specifications:MIL-STD-883, Method 1019,MIL-STD-883 , Me

23、thod 1019, Ionizing Radiation (Total Dose) Test Method3MIL-STD-750, Method 1019,MIL-STD-750 , Method 1019, Steady-State Total Dose Irradiation Procedure3MIL-HDBK-814 Ionizing Dose and Neutron Hardness Assurance Guidelines for Microcircuits and Semiconductor Devices33. Terminology3.1 For terms relati

24、ng to radiation measurements and dosimetry, see Terminology E170.3.2 Definitions of Terms Specific to This Standard:3.2.1 accelerated annealing test, nprocedure utilizing elevated temperature to accelerate time-dependent growth andannealing of trapped charge.3.2.2 category A, nused to refer to a par

25、t containing bipolar structures that is not low dose rate sensitive.3.2.3 category B, nused to refer to a part containing bipolar structures that is low dose rate sensitive.3.2.4 characterization, ntesting to determine the effect of dose, dose-rate, bias, temperature, etc. on the radiation inducedde

26、gradation of a part.3.2.5 delayed reaction rate effect (DRRE), na time and temperature dependent effect where the rate of degradation for asecond irradiation is much greater than the rate of degradation for the first irradiation after a delay time that is dependent on thetemperature of the part duri

27、ng the time between the two irradiations.3.2.6 enhanced low dose rate sensitivity (ELDRS), nused to refer to a bipolar part that shows enhanced (greater) radiationinduced damage for a fixed dose at dose rates below about 50 rd(SiO2)/s compared to damage at the same dose for dose rates of50 rd(SiO2)/

28、s. The enhancement may be a result of true dose rate effects or time dependent effects, or both.3.2.7 gray, nthe gray (Gy) symbol, is the SI unit of absorbed dose, defined as 1 Gy = 1 J/kg (1 Gy = 100 rd).3.2.8 in-flux tests, nmeasurements made in-situ while the test device is in the radiation field

29、.3.2.9 in-situ tests, nelectrical measurements made on devices during, or before-and-after, irradiation while they remain in theirradiation location.3.2.10 in-source tests, nan in-flux test.2 For referenced ASTM standards, visit the ASTM website, www.astm.org, or contact ASTM Customer Service at ser

30、viceastm.org. For Annual Book of ASTM Standardsvolume information, refer to the standards Document Summary page on the ASTM website.3 Available from the Standardization Documents Order Desk, Building 4, Section D, 700 Robbins Ave., Philadelphia, PA 191115094.F1892 1223.2.11 ionizing radiation effect

31、s, nthe changes in the electrical parameters of a microelectronic device resulting fromradiation-induced trapped charge.3.2.11.1 DiscussionIonizing radiation effects are sometimes referred to as“ total dose effects.”3.2.11.2 DiscussionIn this guide, doses and dose rates are specified in rd(SiO2) as

32、contrasted with the use of rd(Si) in other related standards. Thereason is that for ionizing radiation effects in silicon based microelectronic components, it is the energy deposited in the SiO2 gate,field, and spacer oxides that is responsible for the radiation-induced degradation effects. For high

33、 energy irradiation, for example,60Co photons, the difference between dose deposited in Si and SiO2 typically is negligible. For X-ray irradiation, approximately10 keV photon energy, the energy deposited in Si under some circumstances may be approximately 1.8 times the energy depositedin SiO2. For a

34、dditional details, see Guide E1467F1467.3.2.12 not in-flux test, nelectrical measurements made on devices at any time other than during irradiation.3.2.13 overtest, na factor that is applied to the specification dose to determine the test dose level that the samples must passto be acceptable at the

35、specification level. An overtest factor of 1.5 means that the parts must be tested at 1.5 times the specificationdose.3.2.14 parameter delta design margin (PDDM), na design margin that is applied to the radiation induced change in anelectrical parameter.3.2.14.1 DiscussionFor example, for a PDDM of

36、3 the change in a parameter at a specified dose from the pre-irradiation value is multiplied by threeand added to the post-irradiationpre-irradiation value to see if the sample exceeds the post-irradiation parameter limit. For example,if the pre-irradiation value of Ib is 30 nA and the post-irradiat

37、ion value at 20 krd(SiO2) is 70 nA (change in Ib is 40 nA), then fora PDDM of 3 the post-irradiation value would be 150 nA (30 nA + 3 X 40 nA). If the allowable post-irradiation limit is 100 nAthe part would fail.3.2.15 qualification, ntesting to determine the adequacy of a part to meet the requirem

38、ents of a specific application.3.2.16 rad, nthe rad symbol, rd, is a commonly used unit for absorbed dose, defined in terms of the SI unit of absorbed doseas 1 rd = 0.01 Gy.3.2.17 remote tests, nelectrical measurements made on devices that are removed physically from the irradiation location forthe

39、measurements.3.2.18 time dependent effects (TDE), nthe time dependent growth and annealing of ionizing radiation induced trapped chargeand interface states and the resulting transistor or IC parameter changes caused by these effects.3.2.18.1 DiscussionSimilar effects also take place during irradiati

40、on. Because of the complexity of time dependent effects, alternative, but notinconsistent, definitions may prove useful. Two of these are: the complex of time-dependent processes that alter trapped oxidechange (DNot) and interface trap density (DNit) in an MOS or bipolar structure during and after i

41、rradiation; and, the effects of theseprocesses upon device or circuit characteristics or performance, or both.3.2.19 true dose rate effect, na response that occurs during low dose rate irradiation that cannot be reproduced with a highdose rate irradiation followed by an equivalent time anneal.4. Sum

42、mary of Guide4.1 This guide is designed to provide an introduction and direction to the purposes, methods, and strategies of total ionizing dosetesting.4.1.1 PurposesDevice or system hardness may be measured for several different purposes. These may include devicecharacterization, device qualificati

43、on, lot acceptance, line qualification, and studies of device physics.4.1.2 Methods:4.1.2.1 An ionizing radiation effects test consists of performing a set of electrical measurements on a device, exposing thedevice to ionizing radiation while appropriately biased, and then performing a set of electr

44、ical measurements either during or afterirradiation.F1892 1234.1.2.2 Because several factors enter into the effects of the radiation on the device, parties to the test must establish and agreeto a variety of conditions before the validity of the test can be established or before the results of any o

45、ne test can be comparedwith those of another. Conditions that must be established and agreed to include the following:(a) Radiation SourceThe type of radiation source (60Co, X-ray, etc.) that is to be used.NOTE 1The ionizing dose response of many device types has been shown to depend on the type of

46、ionizing radiation to which the device is subjected.The selection of a suitable radiation source for use in such a test must be based on the understanding that the gamma or electron radiation source willinduce a device response that then should be correlated to the response anticipated in the device

47、 application.(b) Dose Rate RangeThe range of dose rates within which the radiation exposures must take place (see 6.4).NOTE 2The response of many devices has been shown to be highly dependent on the rate at which the dose is accumulated. There must be ademonstrated correlation between the response o

48、f the device under the selected test conditions and the rate at which the device would be expected toaccumulate dose in its intended application.(c) Operating ConditionsThe test circuit, electrical biases to be applied, and the electrical operating sequence, if applicable,for the part during irradia

49、tion (see 6.3). This includes the use of in-flux or not in-flux testing.(d) Electrical ParametersThe measurements that are to be made on the test devices before, during (if appropriate), and after(if appropriate) irradiation.(e) Time SequenceThe exposure time, the elapsed time between exposure and post-exposure measurements, and the timebetween irradiations (see 6.5).(f) Irradiation LevelsThe dose(s) to which the test device is to be exposed between measurements (see Practice E666).(g) DosimetryThe dosimetry technique (TLDs, calorimeter