ASTM F1263-2011 Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts《电子元件辐射试验中超量试验数据分析的标准指南》.pdf
《ASTM F1263-2011 Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts《电子元件辐射试验中超量试验数据分析的标准指南》.pdf》由会员分享,可在线阅读,更多相关《ASTM F1263-2011 Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts《电子元件辐射试验中超量试验数据分析的标准指南》.pdf(3页珍藏版)》请在麦多课文档分享上搜索。
1、Designation: F1263 11Standard Guide forAnalysis of Overtest Data in Radiation Testing of ElectronicParts1This standard is issued under the fixed designation F1263; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year of last re
2、vision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide covers the use of overtesting in order toreduce the required number of parts that must be tested to meeta given qu
3、ality acceptance standard. Overtesting is testing asample number of parts at a stress level higher than theirspecification stress in order to reduce the amount of necessarydata taking. This guide discusses when and how overtestingmay be applied to forming probabilistic estimates for thesurvival of e
4、lectronic piece parts subjected to radiation stress.Some knowledge of the probability distribution governing thestress-to-failure of the parts is necessary, although exactknowledge may be replaced by over-conservative estimates ofthis distribution.2. Referenced Documents2.1 Military Standards:MIL-PR
5、F 19500 Semiconductor Devices, General Specifi-cations for2MIL-PRF 38535 Integrated Circuits (Microcircuit Manu-facturing)23. Terminology3.1 Description of Term:3.1.1 Confidencethe probability, C, that at least a fraction,P, of the electronic parts from a test lot will survive in actualservice; sinc
6、e radiation testing of electronic parts is generallydestructive, this probability must be calculated from tests onselected specimens from the lot.3.1.2 Rejection Confidencethe probability, R, that a lotwill be rejected based on destructive tests of selected speci-mens if more than a specified fracti
7、on, P, of the parts in the lotwill fail in actual service.3.1.3 Discussion of Preceding TermsStrictly speaking,most lot acceptance tests (be they testing by attributes orvariables) do not guarantee survivability, but rather that infe-rior lots, where the survival probability of the parts is less tha
8、nprobability, P, will be rejected with confidence, C. In order toinfer a true confidence, it would require a Bayes Theoremcalculation. In many cases, the distinction between confidenceand rejection confidence is of little practical importance.However, in other cases (typically when a large number of
9、 lotsare rejected) the distinction between these two kinds ofconfidence can be significant. The formulas given in this guideapply whether one is dealing with confidence or rejectionconfidence.4. Summary of Guide4.1 This guide is intended to primarily apply to sampling byattribute plans typified by L
10、ot Tolerance Percent Defective(LTPD) tables given in MIL-PRF 38535 and MIL-PRF 19500,and contains the following:4.1.1 An equation for estimating the effectiveness of over-testing in terms of increased probability of survival,4.1.2 An equation for the required amount of overtestinggiven a necessary s
11、urvival probability, and4.1.3 Cautions and limitations on the method.5. Significance and Use5.1 Overtesting should be done when (a) testing by vari-ables is impractical because of time and cost considerations orbecause the probability distribution of stress to failure cannotbe estimated with suffici
12、ent accuracy, and (b) an unrealisticallylarge number of parts would have to be tested at the specifi-cation stress for the necessary confidence and survival prob-ability.6. Interferences6.1 Probability DistributionsIn overtesting, a knowledgeof the probability distribution governing stress to failur
13、e isrequired, though it need not be specified with the sameaccuracy necessary for testing by variables. For bipolar tran-sistors exposed to neutron radiation, the failure mechanism isusually gain degradation and the stress to failure is known tofollow a lognormal distribution.3For bipolar transistor
14、s ex-posed to total dose the use of the lognormal distribution is also1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved June 1, 2011. Published July 2011. Or
15、iginally approvedin 1989. Last previous edition approved in 2005 as F1263 99(2005). DOI:10.1520/F1263-11.2Available from Standardization Documents Order Desk, Bldg. 4 Section D, 700Robbins Ave., Philadelphia, PA 19111-5094, Attn: NPODS.3Messenger, G. C., Steele, E. L., “Statistical Modeling of Semic
16、onductorDevices for the TREE Environment, Transactions on Nuclear Science NS-15,1968, p. 4691.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.fairly accurate.4For more complex electronics and other kindsof radiation stress, the logno
17、rmal distribution is widely used inestimating the failure probabilities of electronic piece parts,and therefore this standard governs the use of a lognormaldistribution. However, caution should be exercised when theprobability distribution of stress to failure is not well estab-lished. Nevertheless,
18、 even if the lognormal distribution doesnot strictly apply, the equations given in Section 7 will hold aslong as a sufficiently conservative estimate was made of thevariability of the parts within the stress range of interest.56.2 Time Dependent Post Radiation EffectsIn total dosetesting annealing a
19、nd rebound effects can affect the results.7. Equations and Tabulations for Overtesting7.1 Let RTand RSbe the respective overtest (radiation levelat which the test is performed) and specification stresses(specification radiation level). Let sln(max) be an estimatedmaximum standard deviation in the na
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
5000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- ASTMF12632011STANDARDGUIDEFORANALYSISOFOVERTESTDATAINRADIATIONTESTINGOFELECTRONICPARTS 电子元件 辐射 试验 超量

链接地址:http://www.mydoc123.com/p-534510.html