IEC 60747-5-3-1997 Discrete semiconductor devices and integrated circuits - Part.5-3 Optoelectronic devices - Measuring methods《半导体分立器件和集成电路 第5-3部分 光电子器件 测试方法》.pdf
《IEC 60747-5-3-1997 Discrete semiconductor devices and integrated circuits - Part.5-3 Optoelectronic devices - Measuring methods《半导体分立器件和集成电路 第5-3部分 光电子器件 测试方法》.pdf》由会员分享,可在线阅读,更多相关《IEC 60747-5-3-1997 Discrete semiconductor devices and integrated circuits - Part.5-3 Optoelectronic devices - Measuring methods《半导体分立器件和集成电路 第5-3部分 光电子器件 测试方法》.pdf(98页珍藏版)》请在麦多课文档分享上搜索。
1、NORME CE1 IEC INTERNATIONALE INTERNATIONAL STANDARD 60747153 1997 AMENDEMENT 1 AMENDMENT 1 2002-03 Amendement 1 Dispositifs discrets semiconducteurs et circuits intgrs - Partie 5-3: Dispositifs optolectroniques - Mthodes de mesure Amendment 1 Discrete semiconductor devices and integrated circuits -
2、Part 5-3: Optoelectronic devices - Measuring methods O IEC 2002 Droits de reproduction rservs - Copyright - all rights reserved International Electrotechnical Commission, 3, rue de Varemb, PO Box 131, CH-121 1 Geneva 20, Switzerland Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 O0 E-mail: inrna
3、iliec.ch Web: www.iec.ch M CODE PRIX Commission Electrotechnique Internationale PRICE CODE International Electrotechnical Commission MeKayHapo supprime; amende. remplace par une dition rvise, ou Page 56 Ajouter les nouveaux paragraphes 5.8 et 5.15.2 suivants: 5.8 Courant de crte ltat bloque (iDRM) a
4、) Objet Mesurer le courant de fuite direct entre les bornes de sortie ltat bloqu dans des conditions spcifies. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-60747-5-3 Amend.
5、 1 O IEC:2002 47E121 O/FDIS -3- 47E12151RVD FOREWORD This amendment has been prepared by subcommittee 47E: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor devices. The text of this amendment is based on the following documents: I FDIS I Report on voting I Full informatio
6、n on the voting for the approval of this amendment can be found in the report on voting indicated in the above table. The committee has decided that the contents of the base publication and its amendments will remain unchanged until 2004. At this date, the publication will be reconfirmed; withdrawn;
7、 amended. replaced by a revised edition, or Page 57 Add the following new subclauses 5.8 to 5.15.2: 5.8 Peak off-state current (/,RM) a) Purpose To measure the forward leakage current between the output terminals in off-state under specified conditions. Copyright International Electrotechnical Commi
8、ssion Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-4- 60747-5-3 Amend. 1 O CEI:2002 r T1 -+ -+ T2 b) Schma de circuit IEC 689/02 Mthode a courant alternatif TI _j -+ T2 IEC 690/02 W W - I R1 I I R, R, Rsistance limitation de
9、 courant Rsistance a dtection de courant Figure 26 - Circuit de mesure pour courant de crte ltat bloqu c) Procdure de mesure 1) Mthode courant continu Le courant de crte ltat bloqu (/DRM) est mesure avec la tension directe a ltat bloqu spcifie qui est applique entre les bornes de sortie ltat bloqu.
10、Le courant de crte ltat bloqu (/DRM) est mesur nouveau avec la polarit inverse des bornes de sortie (TI, T2) au moyen de lapplication du courantlde la tension inverse entre les bornes. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduc
11、tion or networking permitted without license from IHS-,-,-60747-5-3 Amend. 1 O IEC:2002 b) Circuit diagram -5- DC method IEC 689/02 AC method IEC 690/02 Rs Current limiting resistor RI Current detecting resistor Figure 26 - Measurement circuit for peak off-state current c) Measurement procedure 1) D
12、C method The peak off-state current (IDRM) is measured with the specified forward off-state voltage which is applied between the output terminals in off-state. The peak off-state current (/DRM) is measured again with inverted polarity of the output terminals (TI, T2) by applying the reverse voltagec
13、urrent between the terminals. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-6- 60747-5-3 Amend. I O CEI:2002 2) Mthode courant alternatif Le courant de crte ltat bloqu (/DRM
14、) est mesure a la tension de crte a ltat bloqu spcifie avec la tension courant alternatif rectification simple alternance avec la frquence de ligne courant alternatif commerciale, qui est applique entre les bornes de sortie ltat bloqu. Le courant de crte ltat bloqu (IDRM) est mesure nouveau avec la
15、polarit inverse des bornes de sortie (TI, T2) au moyen de lapplication du courantde la tension inverse entre les bornes. 1 Tension de crte a ltat bloqu i Courant Temps Courant de crte Temps IEC 691/02 Figure 27 - Formes dondes de la tension et du courant de crte a ltat bloqu d) Prescriptions 1) La m
16、thode de mesure du courant de crte ltat bloqu utilise deux polarits de tension force (TIjT2 et T2jT1). 2) Dans le cas de la mthode courant continu, il convient que le taux de balayage de la tension continue applique entre les bornes de sortie (TI, T2) ne dpasse pas le taux critique daugmentation de
17、la tension ltat bloqu (dV/dt). Dans le cas de la mthode courant alternatif, il convient que le taux de variation (dV/dt) de la tension sinusodale applique entre les bornes de sortie (TI, T2) ne dpasse pas le taux critique daugmentation de la tension ltat bloqu (dV/dt). e) Conditions spcifies 1 ) Ten
18、sion de crte ltat bloqu ( VD,) 2) Temprature ambiante ( Tamb). 5.9 Tension de crte a ltat passant (VTM) a) Objet Mesurer la tension de crte ltat passant entre les bornes de sortie ltat passant dans des conditions spcifies, lorsque le courant spcifi a ltat passant est appliqu entre les bornes de sort
19、ie ltat passant. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-60747-5-3 Amend. 1 O IEC:2002 -7- Voltage 2) AC method The peak off-state current (/DRM) is measured at the sp
20、ecified peak off-state voltage with the half-wave-rectified a.c. voltage with commercial a.c. line frequency, which is applied between the output terminals in off-state. The peak off-state current (IDRM) is measured again with inverted polarity of the output terminals (TI, T2) by applying the revers
21、e voltage/current between the terminals. - Specified peak off-state voltage b Time IEC 691/02 Figure 27 -Waveforms of the peak off-state voltage and current d) Requirements The measurement method of the peak off-state current uses two forced-voltage polarities (TI+T2 and TZ+Tl). In the case of the d
22、.c. method, the slew rate of the applied d.c. voltage between the output terminals (TI, T2) should not exceed the critical rate of rise of the off-state voltage (dV/dt). In the case of the a.c. method, the rate of change (dV/dt) of the applied sine-wave- voltage between the output terminals (TI, T2)
23、 should not exceed the critical rate of rise of the off-state voltage (dVldt). e) Specified conditions 1) Peak off-state voltage (VD,) 2) Ambient temperature ( Tamb). 5.9 Peak on-state voltage (VTM) a) Purpose To measure the peak on-state voltage between the output terminals in on-state under specif
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