ISO 17331-2004 Surface chemical analysis - Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and the.pdf
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1、 Reference number ISO 17331:2004(E) ISO 2004INTERNATIONAL STANDARD ISO 17331 First edition 2004-05-15 Surface chemical analysis Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence
2、 (TXRF) spectroscopy Analyse chimique des surfaces Mthodes chimiques pour collecter les lments analyss de tranches de silicium comme matriaux de rfrence pour lanalyse par spectroscopie de fluorescence X en rflexion totale (TXRF) ISO 17331:2004(E) PDF disclaimer This PDF file may contain embedded typ
3、efaces. In accordance with Adobes licensing policy, this file may be printed or viewed but shall not be edited unless the typefaces which are embedded are licensed to and installed on the computer performing the editing. In downloading this file, parties accept therein the responsibility of not infr
4、inging Adobes licensing policy. The ISO Central Secretariat accepts no liability in this area. Adobe is a trademark of Adobe Systems Incorporated. Details of the software products used to create this PDF file can be found in the General Info relative to the file; the PDF-creation parameters were opt
5、imized for printing. Every care has been taken to ensure that the file is suitable for use by ISO member bodies. In the unlikely event that a problem relating to it is found, please inform the Central Secretariat at the address given below. ISO 2004 All rights reserved. Unless otherwise specified, n
6、o part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either ISO at the address below or ISOs member body in the country of the requester. ISO copyright office Case post
7、ale 56 CH-1211 Geneva 20 Tel. + 41 22 749 01 11 Fax + 41 22 749 09 47 E-mail copyrightiso.org Web www.iso.org Published in Switzerland ii ISO 2004 All rights reservedISO 17331:2004(E) ISO 2004 All rights reserved iiiContents Page Foreword iv Introduction v 1 Scope 1 2 Normative references. 1 3 Terms
8、 and definitions. 1 4 Abbreviations 2 5 Reagents 2 6 Apparatus. 6 7 Specimen preparation and measurement environments 6 8 Preparation of calibration specimen. 6 9 Making calibration curve 8 10 Collection of iron and/or nickel from working reference material . 10 11 Determination of iron and/or nicke
9、l of working reference material. 11 12 Precision 11 13 Test report 12 Annex A (informative) International inter-laboratory test results 13 Annex B (informative) International inter-laboratory test results of GF-AAS and ICP-MS . 16 ISO 17331:2004(E) iv ISO 2004 All rights reservedForeword ISO (the In
10、ternational Organization for Standardization) is a worldwide federation of national standards bodies (ISO member bodies). The work of preparing International Standards is normally carried out through ISO technical committees. Each member body interested in a subject for which a technical committee h
11、as been established has the right to be represented on that committee. International organizations, governmental and non-governmental, in liaison with ISO, also take part in the work. ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of electrotechnical
12、 standardization. International Standards are drafted in accordance with the rules given in the ISO/IEC Directives, Part 2. The main task of technical committees is to prepare International Standards. Draft International Standards adopted by the technical committees are circulated to the member bodi
13、es for voting. Publication as an International Standard requires approval by at least 75 % of the member bodies casting a vote. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights (see Note to 10.1). ISO shall not be held responsible f
14、or identifying any or all such patent rights. ISO 17331 was prepared by Technical Committee ISO/TC 201, Surface chemical analysis. ISO 17331:2004(E) ISO 2004 All rights reserved vIntroduction The measurement of metal impurities on the surface of silicon wafers by total-reflection X-ray fluorescence
15、spectroscopy (TXRF) is commonly accepted by the semiconductor industry. ISO 14706 specifies a TXRF method for the measurement of metal impurities on a silicon-wafer surface with atomic surface densities from 1 10 10atoms/cm 2to 1 10 14atoms/cm 2 , also a vapour-phase decomposition (VPD) method for a
16、tomic surface densities from 5 10 8atoms/cm 2to 5 10 12atoms/cm 2 . In ultra-large-scale integrated circuit (ULSI) manufacturing, the measurement of very-low-level metal impurities on the surface of a silicon wafer, less than 10 10atoms/cm 2 , is currently required. Reference materials with low-leve
17、l metal impurities are important in TXRF analysis (see ISO 14706), but the reference materials have a limited shelf life, especially as regards surface contamination. As a result, preparation methods for working reference materials need to be standardized. This test method allows the calculation of
18、metal impurities on the surface of reference and test wafers. Interlaboratory trials in nine laboratories in different countries indicated that this method has good reproducibility and repeatability. INTERNATIONAL STANDARD ISO 17331:2004(E) ISO 2004 All rights reserved 1Surface chemical analysis Che
19、mical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy 1 Scope This International Standard specifies chemical methods for the collection of iron and/or nickel from t
20、he surface of silicon-wafer working reference materials by the vapour-phase decomposition method or the direct acid droplet decomposition method. NOTE The determination of the elements collected may be carried out by graphite-furnace atomic-absorption spectroscopy or inductively coupled plasma mass
21、spectrometry instead of by total-reflection X-ray fluorescence spectroscopy. This International Standard applies to iron and/or nickel atomic surface densities from 6 10 9atoms/cm 2to 5 10 11atoms/cm 2 . 2 Normative references The following referenced documents are indispensable for the application
22、of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. ISO 5725-2:1994, Accuracy (trueness and precision) of measurement methods and results Part 2: Basic method for the determi
23、nation of repeatability and reproducibility of a standard measurement method ISO 14644-1:1999, Cleanrooms and associated controlled environments Part 1: Classification of air cleanliness ISO 14706:2000, Surface chemical analysis Determination of surface elemental contamination on silicon wafers by t
24、otal-reflection X-ray fluorescence (TXRF) spectroscopy 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 working reference material silicon wafer used for the calibration specified in ISO 14706 3.2 calibration specimen silicon wafer with a know
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