ANSI IEEE C62 37 ERTA-2009 Errata to IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices.pdf

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1、IEEE Std C62.37-1996 Errata to IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices Sponsor Surge Protective Devices Committee of the IEEE Power IGKS), text after sentence should read as follows: (See 4.5.21) Page 10, section 4.4.4, Non-repetitive peak pulse current IPPS, la

2、st paragraph, last sentence should read as follows: Table 1 shows some wave shapes commonly used to test thyristor SPDs for telecommunication applications. Page 11, Subclause 4.1, Standard design test criteria, first sentence should read as follows: The design tests described in 4.4.1 through 4.5.26

3、 provide standardized methods for making single observations of a specified property of a thyristor SPD. Page 12, Subclause 4.3, Thyristor surge protection device (SPD) test conditions, title should read as follows: Thyristor surge protective device (SPD) test conditions Page 12, Subclause 4.3, Thyr

4、istor surge protection device (SPD) test conditions, sixth sentence should read as follows: Normally this would be done by clipping ferrite cores onto the probe cables. Page 18, Subclause 4.4.8, Critical rate of rise of on-state current di/dt, first sentence should read as follows: 23 October 2009 2

5、 STD94502 Correction Sheet to IEEE Std C62.37-1996 The purpose of this test is to verify that a thyristor SPD can survive a fast rising current, as may occur on the wavefront of an impulse. Page 20, Subclause 4.5.4, Breakover voltage V(BO)and current I(BO), The test generator shall be specified for

6、the open-circuit voltage and short-circuit current waveforms (or equivalents of rate-of-rise, wave shape and wave shape peak value) and, for ac testing, the duration. Page 23, Subclause 4.5.3, Figures 17, 18 and 19 should be as follows: 23 October 2009 3 STD94502 Correction Sheet to IEEE Std C62.37-

7、1996 Time - ms024681012Thyristor SPDVoltage -V050100150200250V(BO)VTTime - ms024681012Thyristor SPD Current- A0123456ITIHTime relative to 8.99 ms - s0246810Thyristor SPD Voltage-V01020304050607080Time relative to 8.99 ms - s0246810ThyristorSPD Current -mA0100200300IHTime - s0 200 400 600 800 1000Thy

8、ristor SPD Voltage-V050100150200250300VTTime - s0 200 400 600 800 1000Thyristor SPDCurrent -A0123456ITTime - s0 100 200 300Thyristor SPD Voltage-V050100150200250300V(BO)Time - s0 100 200 300ThyristorSPD Current -mA0100200300400500I(BO)Figure 17Switching and on-state waveforms for a positive breakdow

9、n slope thyristor SPD 23 October 2009 4 STD94502 Correction Sheet to IEEE Std C62.37-1996 Time - ms024681012ThyristorSPD Current - A0123456ITIHTime - ms024681012ThyristorSPD Voltage -V01020304050607080V(BO)VTTime relative to 8.8 ms - ms0.0 0.2 0.4 0.6 0.8 1.0ThyristorSPD Voltage - V020406080Time rel

10、ative to 8.8 ms - ms0.0 0.2 0.4 0.6 0.8 1.0Thyristor SPD Current- mA0100200300400IHVoltage Clamping CurrentTime - s0 200 400 600 800 1000ThyristorSPD Current- A0123456ITTime - s0 200 400 600 800 1000ThyristorSPD Voltage - V020406080VTTime - s0 100 200 300ThyristorSPD Voltage - V01020304050607080VSV(

11、BO)Time - s0 100 200 300Thyristor SPD Current- mA0100200300400500I(BO)ISFigure 18Switching and on-state waveforms of a gated thyristor SPD 23 October 2009 5 STD94502 Correction Sheet to IEEE Std C62.37-1996 Time - ms024681012ThyristorSPDCurrent - A0123456ITIHTime - ms024681012Thyristor SPD Voltage -

12、 V050100150200250V(BO)VTTime relative to 8.77 ms - s0246810ThyristorSPD Voltage -V020406080100Time relative to 8.77 ms - s0246810Thyristor SPDCurrent - mA0100200300IHTime - s0 200 400 600 800 1000ThyristorSPD Voltage -V050100150200250VTTime - s0 200 400 600 800 1000Thyristor SPDCurrent - A0123456ITT

13、ime - s0 100 200 300Thyristor SPDCurrent - mA0100200300400500I(BO)(I(BO)too small to be determined)ISTime - s0 100 200 300ThyristorSPD Voltage -V050100150200250300V(BO)VSFigure 19Switching and on-state waveforms for a negative breakdown slope thyristor SPD 23 October 2009 6 STD94502 Correction Sheet

14、 to IEEE Std C62.37-1996 Page 25, Subclause 4.5.6, Holding current IH, third sentence should read as follows: The test generator shall be specified for the open circuit voltage and short-circuit current values, or equivalents, of wave shape and wave shape peak value Page 25, Subclause 4.5.6, Holding

15、 current IH, second to last sentence should read as follows: To increase the switch off voltage level, the generator and a current ( minimum specified value of IH) from a dc voltage supply (VDRM) should be diode ORed onto the DUT (see Figure 21). Page 26, Subclause 4.5.6, Holding current IH, Figure

16、21 title should read as follows: Figure 21Test circuit for holding current (IH) with additional dc bias (impulse reset) Page 28, Subclause 4.5.8, Breakdown voltage V(BR), last sentence of second paragraph should read as follows: For a negative breakdown slope thyristor SPD (see Figures 4, 5, and 6)

17、this measurement approach can be used to determine V(BO). Page 29, Subclause 4.5.9, Switching voltage VSand current IS, sixth sentence should read as follows: A V-I characteristic can be produced by plotting the recorded current against the recorded voltage. Page 30, Subclause 4.5.11, Peak forward r

18、ecovery voltage VFRM, third sentence should read as follows: The generator shall switch the diode section on at a specified rate of forward current rise, dIF/dt, and the value of peak forward recovery voltage, VFRM, shall be measured (see Figure 25). Page 32, Subclause 4.5.14, Temperature coefficien

19、t of breakdown voltage, title should read as follows: Temperature coefficient of breakdown voltage V(BR)Page 33, Subclause 4.5.17, Thermal resistance R, Third equation should read as follows: RJL= (TJPK-TL)/PTOTC/W Page 34, Subclause 4.5.17, Thermal resistance R, Figure 28 title should read as follo

20、ws: Figure 28Test circuit for thermal resistance (R) and impedance (Z) Page 35, Subclause 4.5.18, Transient thermal impedance Z(t), Figure 29 should be as follows: 23 October 2009 7 STD94502 Correction Sheet to IEEE Std C62.37-1996 THERMAL RESPONSEt - Power Pulse Duration - s00001 0001 001 01 1 10 1

21、00 1000ZJ- Transient Thermal Impedance - C/W110100Figure 29Thermal impedance (ZJA) vs. time Page 40, Subclause 4.5.24, Gate switching chargeQGS, Figure 35 should be as follows: 23 October 2009 8 STD94502 Correction Sheet to IEEE Std C62.37-1996 Figure 35Test circuit for gate switching current, gate

22、switching charge, and gate-to adjacent terminal breakover voltage (IGSM, QGS, VGK(BO), VGA(BO) Page 40, Figure 35, last listed item should read as follows: CRO = Dual channel oscilloscope or equivalent Page 41, Figure 36, last listed item should read as follows: CRO = Dual channel oscilloscope or eq

23、uivalent Page 42, Subclause 4.5.24, Gate switching chargeQGS, Figure 37 should be as follows: 23 October 2009 9 STD94502 Correction Sheet to IEEE Std C62.37-1996 Time - s0.10.20.30.40.50.60.7Current - A-2.0-1.5-1.0-0.50.00.51.0QGSIKTime - s0.0 0.5 1.0 1.5Current - A-5-4-3-2-101IKIGTime - s0.0 0.5 1.

24、0 1.5Voltage - V-80-60-40-200VGGVKTime - s0.10.20.30.40.50.60.7Voltage - V-80-75-70VGK(BO)VGGVKFigure 37Overall and expanded clamping waveforms for a p-type gate DUT to illustrate VGK(BO)and QGSmeasurement (diK/dt=10 A/s) Page 47, Subclause A.1.31, quadrant, second sentence should read as follows: T

25、hese quadrants are numbered counterclockwise as 1 through 4. Page 48, Subclause A.1.41, unidirectional thyristor surge protection device (SPD), title should read as follows: unidirectional thyristor surge protective device (SPD): Page 41, Figure 36, last listed item should read as follows: CRO = Dual channel oscilloscope or equivalent 23 October 2009 10 STD94502 Correction Sheet to IEEE Std C62.37-1996 23 October 2009 11 STD94502