IEC 60747-2-2-1993 Semiconductor devices discrete devices part 2 rectifier diodes section 2 blank detail specification for rectifier diodes (including avalanche rectifier diodes) a.pdf

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1、NORME CE1 INTERNATIONALE INTERNATIONAL STANDARD I EC 747-2-2 QC 7501 O9 Premire dition First edition 1993-09 Dispositifs semiconducteurs - Dispositifs discrets - Partie 2: Diodes de redressement - Section 2: Spcification particulire cadre pour les diodes de redressement (y compris les diodes avalanc

2、he), tempratures ambiante et de boitier spcifies, pour courants suprieurs 1 O0 A Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section 2: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than

3、100 A Numro de rfrence Reference number CEIAEC 747-2-2: 1993 Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Numros des publications Depuis le ler janvier 1997, les publicatio

4、ns de la CE1 sont numrotes partir de 60000. Publications consolides Les versions consolides de certaines publications de la CE1 incorporant les amendements sont disponibles. Par exemple, les numros ddition 1.0, 1.1 et 1.2 indiquent respectivement la publication de base, la publication de base incorp

5、orant lamendement 1, et la publication de base incorporant les amendements 1 et 2. Validit de la prsente publication Le contenu technique des publications de la CE1 est constamment revu par la CE1 afin quil reflte ltat actuel de la technique. Des renseignements relatifs la date de reconfirmation de

6、la publication sont disponibles dans le Catalogue de la CEI. Les renseignements relatifs des questions ltude et des travaux en cours entrepris par le comit technique qui a tabli cette publication, ainsi que la liste des publications tablies, se trouvent dans les documents ci- dessous: Site web de la

7、 CEI* Catalogue des publications de la CE1 Publi annuellement et mis jour rgulirement (Catalogue en ligne)* Disponible la fois au site web) de la CEI* et comme priodique imprim Bulletin de la CE1 Terminologie, symboles graphiques et littraux En ce qui concerne la terminologie gnrale, le lecteur se r

8、eportera la CE1 60050: Vocabulaire Electro- technique International (VEI). Pour les symboles graphiques, les symboles littraux et les signes dusage gnral approuvs par la CEI, le lecteur consultera la CE1 60027: Symboles littraux A utiliser en lectrotechnique, la CE1 6041 7: Symboles graphiques utili

9、sables sur le matriel. Index, relev et compilation des feuilles individuelles, et la CE1 60617: Symboles graphiques pour schmas. * Voir adresse 4te web sur la page de titre. Numbering As from 1 January 1997 all IEC publications are issued with a designation in the 60000 series. Consolidated publicat

10、ions Consolidated versions of some IEC publications including amendments are available. For example, edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication, the base publication incorporating amendment 1 and the base publication incorporating amendments 1 and 2. Validity of th

11、is publication The technical content of IEC publications is kept under constant review by the IEC, thus ensuring that the content reflects current technology. Information relating to the date of the reconfirmation of the publication is available in the IEC catalogue. Information on the subjects unde

12、r consideration and work in progress undertaken by the technical committee which has prepared this publication, as well as the list of publications issued, is to be found at the following IEC sources: IEC web cite* Catalogue of IEC publications Published yearly with regular updates (On-line catalogu

13、e) Available both at the IEC web site and as a printed periodical IEC Bulletin Terminology, graphical and letter symbols For general terminology, readers are referred to I EC 60050: International Electrotechnical Vocabulary (IEV). For graphical symbols, and letter symbols and signs approved by the I

14、EC for general use, readers are referred to publications IEC 60027: Letter symbols to be used in electrical technology, IEC 60417: Graphical symbols for use on equipment. Index, survey and compilation of the single sheets and IEC 60617: Graphical symbols for diagrams. * See web site address on title

15、 page. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NORME I NTE RN AT1 ON ALE INTERNATIONAL STANDARD CE1 IEC 747-212 QC 750109 Premire dition First edition 1993-09 Disposit

16、ifs semiconducteurs - Dispositifs discrets - Partie 2: Diodes de redressement - Section 2: Spcification particulire cadre pour les diodes de redressement (y compris les diodes avalanche), tempratures ambiante et de boitier spcifies, pour courants suprieurs 100 A Semiconductor devices - Discrete devi

17、ces - Part 2: Rectifier diodes - Section 2: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A 0 CE1 1993 Droits de reproduction rservs - Copyright - all rights reserved Aucune pariie de tte publication ne p

18、eut any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. The IEC collaborates closely with the International Organization fo

19、r Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of the IEC on technical matters, prepared by technical committees on which all the National Committees having a special interest therein are represented,

20、 express, as nearly as possible, an international consensus of opinion on the subjects dealt with. 3) They have the form of recommendations for international use published in the form of standards, technical reports or guides and they are accepted by the Nationai Committees in that sense. 4) In orde

21、r to promote international unification, IEC National Committees undertake to apply IEC International Standards transparently to the maximum extent possible in their national and regional standards. Any divergence between the IEC Standard and the corresponding national or regional standard shall be c

22、learly indicated in the latter. This International Standard has been prepared by IEC technical committee 47: Semi- conductor devices. This standard is a blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A. Th

23、e text of this standard is based on the following documents: I 47(C0)1279 I 47(C0)1341 I Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. The QC number that appears on the front cover of this publication is the specif

24、ication number in the IEC Quality Assessment System for Electronic Components (IECQ). Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-4- Autres publications de la CE1 cites da

25、ns la prsente norme: 747-2-2 O CE111 993 Publications nos 68-2-17 (1978): 191-2 (1966): 747-2 (1983): 747-10 (1991): 747-1 1 (1985): 749 (1 984): Essais denvironnement - Deuxime partie: Essais - Essai Q: Etanchit. Normalisation mcanique des dispositifs semiconducteurs - Deuxime partie: Dimensions. (

26、En rvision) Dispositifs semiconducteurs. Dispositifs discrets et circuits intgrs - Deuxime partie: Diodes de redressement. Amendement 1 (1992). Dispositifs semiconducteurs. Dispositifs discrets et circuits intgrs - Dixime partie: Spcification gnrique pour les dispositifs discrets et les circuits int

27、grs. (Deuxime dition) Dispositifs semiconducteurs. Dispositifs discrets et circuits intgrs - Onzime partie: Spcification intermdiaire pour les dispositifs discrets. Dispositifs semiconducteurs - Essais mcaniques et climatiques. Amendement 1 (1991). Copyright International Electrotechnical Commission

28、 Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-747-2-2 O IEC:1993 -5- The following IEC publications are quoted in this standard: Publications Nos. 68-2-17 (1978): 191-2 (1966): 747-2 (1 983): 747-10 (1991): 747- 1 1 (1 985):

29、 749 (1 984): Environmental testing - Part 2: Tests - Test Q: Sealing. Mechanical standardization of semiconductor de vices - Part 2: Dimensions. (Under revision) Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes. Amendment 1 (1 992). Semiconductor devices -

30、 Discrete devices and integrated circuits - Part IO: Generic specification for discrete devices and integrated cir- cuits. (Second edition) Semiconductor devices - Discrete devices and integrated circuits - Part 11: Sectional specification for discrete devices. Semiconductor devices - Mechanical and

31、 climatic test methods. Amendment 1 (1991). Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-6- 747-2-2 O CEI:1993 DISPOSITIFS SEMICONDUCTEURS - Dispositifs discrets - Partie 2

32、: Diodes de redressement - Section 2: Spcification particulire cadre pour les diodes de redressement (y compris les diodes avalanche), temperatures ambiante et de botier spcifies, pour courants suprieurs 100 A INTRODUCTION Le Systme CE1 dassurance de la qualit des composants lectroniques fonctionne

33、conformment aux statuts de la CE1 et sous son autorit. Le but de ce systme est de dfinir les procdures dassurance de la qualit de telle faon que les composants lectroniques livrs par un pays participant comme tant conformes aux exigences dune spcification applicable soient galement acceptables dans

34、tous les autres pays participants sans ncessiter dautres essais. Cette spcification particulire cadre fait partie dune srie de spcifications particulires cadres concernant les dispositifs semiconducteurs; elle doit tre utilise avec les publications suivantes de la CEI: CE1 747-1 O/QC 700000 (1 991):

35、 Dispositifs A semiconducteurs - Dispositifs discrets et circuits intgrs - Dixime partie: Spcification gnrique pour les dispositifs discrets et les circuits intgrs CE1 747-1 1/QC 7501 O0 (1985): Dispositifs A semiconducteurs - Dispositifs discrets et circuits intgrs - Onzime partie: Spcification int

36、ermdiaire pour les dispositifs discrets Renseignements ncessaires Les nombres indiqus entre crochets sur cette page et les suivantes correspondent aux indications suivantes qui doivent tre portes dans les cases prvues cet effet. Identification de la spcification particulire I Nom de lorganisme Natio

37、nal de Normalisation sous lautorit duquel la spcification particulire est tablie. 2 Numro IECQ de la spcification particulire. 3 Numros de rfrence et ddition des spcifications gnrique et intermdiaire. 4 Numro national de la spcification particulire, date ddition et toute autre information requise pa

38、r le systme national. Identification du composant 5 Type de composant. 6 Renseignements sur la construction et les applications typiques. Si un dispositif peut avoir plusieurs applications, cela doit tre indiqu dans la spcification particulire. Les caractristiques, les limites et les exigences de co

39、ntrle relatives ces applications doivent tre respectes. Pour les dispositifs sensibles aux charges lectrostatiques, ou contenant des matriaux instables, par exemple de loxyde de bryllium, les prcautions ncessaires observer doivent tre ajoutes dans la spcification particulire. Copyright International

40、 Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-747-2-2 O lEC:1993 -7- SEMICONDUCTOR DEVICES - Discrete devices - Part 2: Rectifier diodes - Section 2: Blank detail specification for rectifier diode

41、s (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A INTRODUCTION The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define

42、 quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank detail spec

43、ification is one of a series of blank detail specifications for semi- conductor devices .and shall be used with the following IEC publications: IEC 747-1 O/QC 700000 (1 991): Semiconductor devices - Discrete devices and integrated circuits - Part 1 O: Generic specification for discrete devices and i

44、ntegrated circuits IEC 747-1 I/QC 7501 O0 (1 985): Semiconductor devices - Discrete devices and integrated circuits - Part 1 I: Sectional specification for discrete devices Required information Numbers shown in brackets on this and the following pages correspond to the following items of required in

45、formation, which should be entered in the spaces provided. Identification of the detail specification l The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the gene

46、ric and sectional specifications. 4 The national number of the detail specification, date of issue and any further information required by the national system. Identification of the component 151 Type of component. 6 Information on typical construction and applications. If a device is designed to sa

47、tisfy several applications, this shall be stated here. Characteristics, limits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, or contains hazardous material, e.g. beryllium oxide, a caution statement should be added in the detail specificatio

48、n. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-8- 747-2-2 O CE111 993 7 Dessin dencombrement et/ou rfrence aux normes correspondantes pour les encombrements. 8 Catgorie dassurance de la qualit. 9 Donnes de rfrence sur les proprits les plus importantes pour permettre la comparaison des types de composants entre eux. Dans toute