KS C 2150-2008 Measuring method of dielectric constant and dielectric loss of dielectric thin film at the high frequency ranges(500 MHz～10 GHz)《在高频带(500MHz 10GHz)的介电常数和介电损耗测量的介电薄膜的.pdf

《KS C 2150-2008 Measuring method of dielectric constant and dielectric loss of dielectric thin film at the high frequency ranges(500 MHz～10 GHz)《在高频带(500MHz 10GHz)的介电常数和介电损耗测量的介电薄膜的.pdf》由会员分享，可在线阅读，更多相关《KS C 2150-2008 Measuring method of dielectric constant and dielectric loss of dielectric thin film at the high frequency ranges(500 MHz～10 GHz)《在高频带(500MHz 10GHz)的介电常数和介电损耗测量的介电薄膜的.pdf（14页珍藏版）》请在麦多课文档分享上搜索。

1、 KSKSKSKSKSKSKSK KSKSKS KSKSK KSKS KSK KS KS C 2150 (500 MHz 10 GHz) KS C 2150:2008 2008 11 28 http:/www.kats.go.krKS C 2150:2008 : ( ) ( ) FITI ( ) : (http:/www.standard.go.kr) ： ： 2008 11 28 2008-0839 ： ： ( 02-509-7294) (http:/www.kats.go.kr). 10 5 , . KS C 2150:2008 i ii .1 1 1 2 1 3 .1 4 .2 5 .2

2、 5.1 2 5.2 .2 6 2 6.1 .3 6.2 3 6.3 .4 6.4 .6 7 .8 8 8 KS C 2150:2008 ii (ISO) , (KS) . . , , . , , . KS C 2150:2008 (500 MHz 10 GHz) Measuring method of dielectric constant and dielectric loss of dielectric thin film at the high frequency ranges(500 MHz 10 GHz) 1998 “Z. Ma et al., RF Measurement Tec

3、hnique for Characterizing Thin Dielectric Films, IEEE TRANSACTION ON ELECTRON DEVICES, Vol. 45, No. 8, pp. 1811 1816, 1998” 2006 “S. J. Lee et al., Microwave Dielectric Properties of BaTi4O9Thin Film, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 26, pp. 2165 2168, 2006” . 1 (500 MHz 10 GHz) . 2 . .

4、 ( ) . KS C IEC 60050 151, 151： KS C IEC 60050 726, 726： KS L 1619, 4 3 KS C IEC 60050 151 KS C IEC 60050 726 , . 3.1 (patterning) 3.2 (photo-lithography) KS C 2150:2008 2 3.3 (circular patch patterns) 1 a) 3.4 (one-port reflection measurement) 3.5 (circular patch capacitors) , , ( 1 ) 3.6 CPW (copl

5、anar waveguide probe) 2 . 3.7 (sheet resistance) KS L 1619 , (： /sq). 3.8 MIM (metal-insulator-metal capacitor) - 4 class 100 (clean room) , (25 5) . , . 5 5.1 , . 5.2 a) , 500 MHz 10 GHz . b) CPW , Be-Cu , 150 m ( 2 ). 6 KS C 2150:2008 3 6.1 1 a) (R1) (R2) Si/SiO2(100 nm)/Ti(5 nm)/Pt(70 nm) 1 b) .

6、SiO2/Ti (Pt) Si , . , . , Al , Al (skin depth) 1.0 m . Al 1 . AlR1R2 1 Si/SiO2(100 nm)/Ti(5 nm)/Pt(70 nm) a) , b) SG G150 150 2 CPW 6.2 , ( 1 ) ( ) . ( ) (1) ( Z ) . CPW 3 . Si a) b) S： G： KS C 2150:2008 4 (Pt) (Al)CPW a b 3 CPW +=110ZZ (1) Z ： Z0： (50) ： 6.3 6.3.1 4 MIM (b) (a1, a2) . Za1 Za2 . Za1

7、 Za2 (Zfilm) , (r) (5) . . 1a2abb: Al: 4 (b) (a1 a2) (Pt) (AI) ： Al CPW a b ： KS C 2150:2008 5 6.3.2 5 . (2) . (3) . (4) . . , . . . (5) . , Za1 Za2 (5) , . 5 +=outercenterouterringcentera111)(CCiRRRZ (2) =abRR ln2shring (3) trCr02r= . (4) +=2221r012shfilm111ln221aatiaaRZZZaa (5) Za： a () Rcenter： (

8、) Rring： () Router： () Ccenter： (F) Couter： (F) Rsh： a ： (m) b ： (m) Cr： r (F) KS C 2150:2008 6 Zfilm： () Za1： a1(m) () Za2 ： a2(m) () ： ( 2f) f： (1/s) t ： (m) 0： (8.85410 12 F/m) r： 6.4 6.4.1 ( 4 ) (Zfilm) (5) . (5) Zfilm (6) . )Im()Re(tanfilmfilmmZZ= (6) tanm： Re(Zfilm) ： () Im(Zfilm) ： () CPW . 6

9、 . Rs CPW . Rs . Rs , (6) Rs (7) . RsRpCpCp (F) Rp () Rs CPW 6 CpsRpKS C 2150:2008 7 )Im()Re(tanfilmsfilmpZRZ = (7) tanp： Re(Zfilm) ： () Rs： CPW () Im(Zfilm) ： () 6.4.2 Rs 6 (8) . (8) 2Cp2Rp2 1 tanp(1/CpRp) , (9) . s2p2p22pppspppfilm11RRCRCiRRRCiRZ +=+= (8) ps2ppfilm1)(tanCiRRZ += .(9) (9) )Im(filmZ

10、 p1C . (7) (10) , Rs . sppspfilmfilmtan1tan)Im()Re( RCRZZ +=+= sppfilm1tan)Re( RCZ += (10) , Re(Zfilm) y 1 x , y , Rs . 7 . , 7 Re(Zfilm) . (method of least squares) y , Rs . , 1 % . Rs (7) . KS C 2150:2008 8 6.4.3 Rs 7 Rs( 0.53) 7 DRAM . (1 Hz 1 MHz ) . (GHz ) . (500 MHz 10 GHz) . 35 m 60 m, 100 m

11、. (fringing) 0.1 % , 1 m . 8 . a) b) c) d) e) f) g) h) Rs： 0.53 Re(Zfilm) Re(Zfilm) (500 MHz10 GHz) 135513 7017 (02)60094114 (02)600948878 http:/ KS C 2150:2008 KSKSKS SKSKS KSKS SKS KS SKS KSKS SKSKS KSKSKS Measuring method of dielectric constant and dielectric loss of dielectric thin film at the high frequency ranges(500 MHz10 GHz)ICS 31.140 Korean Agency for Technology and Standards http:/www.kats.go.kr