JEDEC JESD313B-1975 Conduction Cooled Power Transistors Thermal Resistance Measurements of《传导冷却功率晶体管热阻测量 EIA-313-B 前RS-313-B的修订本》.pdf
《JEDEC JESD313B-1975 Conduction Cooled Power Transistors Thermal Resistance Measurements of《传导冷却功率晶体管热阻测量 EIA-313-B 前RS-313-B的修订本》.pdf》由会员分享,可在线阅读,更多相关《JEDEC JESD313B-1975 Conduction Cooled Power Transistors Thermal Resistance Measurements of《传导冷却功率晶体管热阻测量 EIA-313-B 前RS-313-B的修订本》.pdf(18页珍藏版)》请在麦多课文档分享上搜索。
1、JEDEC STANDARD Thermal Resistance Measurements of Conduction Cooled Power Transistors JESD313B (Revision of EIA-313-B formerly RS-313-B) OCTOBER 1975 (Reaffirmed: APRIL 1981, APRIL 2001) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been p
2、repared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilit
3、ating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications ar
4、e adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The informat
5、ion included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met.
6、 Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or call (703) 907-7559 or www.jedec.org Published by JEDEC Solid State Technology Association 2003 2500 Wilson Boulevard Arlington, VA 22201-3834 Thi
7、s document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the individual agrees not to charge for or resell the resulting material. PRICE: Please refer to the current Catalog of JEDEC Engineering Standards and Publications or call Glo
8、bal Engineering Documents, USA and Canada 1-800-854-7179, International (303) 397-7956 Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be reproduced without permission. Organizations may obtain permission to reproduce a limite
9、d number of copies through entering into a license agreement. For information, contact: JEDEC Solid State Technology Association 2500 Wilson Boulevard Arlington, Virginia 22201-3834 or call (703) 907-7559 FOREWORD This standard describes a recommended test method for measuring the thermal resistance
10、 of conduction-cooled power transistors. This method is offered as a replacement for that contained in EIA/NEMA Standard RS-313-A (March 1968) which has been found deficient in its test method detail. The present method is the emitter-base forward voltage method with emitter-base switching and treat
11、s the detail circuitry, test instruments, calibration and precautions to assure relialde and rcproducihle mcasurcment. It generally conforms to the principle of MIL-STD.750 Method 3131 and to IEC Publication 147X2 Method 12.3.1. However, experience has shown that the test Performed under this Standa
12、rd is apphcahle to all power transistors regardless of thermal response times. This material was Prepared by JEDEC Committee JC-25 on Power Transistors and approved fo r publication by the JEDEC Solid State Products Council. RS-313-B Page 1 THERMAL RESISTANCE MEASUREMENTS OF CONDUCTION COOLED POWER
13、TRANSISTORS (From Stondnrds Proposal No. I 179, formulated under the cognizance of the JC-25 JEDEC Committee on Power Transistors.) 1. THERMAL RESISTANCE, JUNCTION to SPECIFIED REFERENCE POINT (ReJR). 1. I General Considerations. Of the thermal characteristics of a semiconductor device, the most fre
14、quently specified parameter is the thermal resistance between the chip and a reference point such as the device case or ambient. The thermal resistance of a semiconductor device is a measure of the ability of its mechanical structure (package) to provide for heat removal from the semiconductor junct
15、ion. In most devices, the maximum junction temperature cant be measured directly since the area of interest is not accessible due to packaging considerations. Thus, indirect means are used to infer the temperature of a specific area on the chip. The thermal resistance of a semiconductor device is th
16、erefore determined hy the measurement of a temperature-sensitive electrical parameter of a semiconductor junction within the device. The measured thermal nxistanct: of semiconductor clemcnts (transistors) is not constant as frequently assumed, IJI depends on the drvice operating conditions, the junc
17、tion and reference point temprratures, and the temperatura-sensitive parameter chosen. When specifying thermal resistance, it is therrforc important to indicate clearly the measuring conditions. The temperature sensitive device paramctcr is used as an indicator of an average (weighted) junction temp
18、erature of the semiconductor clement for calculations of thermal resistance. In measuring power transistor thrrmal resistance, either the emitter-base forward voltage or the collector-base forward voltage can bc used as the temperature sensitive electrical parameter to indicate the junction temperat
19、ure. Although equally precise, the Emitter-Base Voltage Technique has been found to be more accurale than the Collector-Base Voltage Technique, i.e., the Emitter- Base Voltage Technique gives a junclion temperature closer to the actual peak temperature on the chip. The greater inaccuracy of the Coll
20、ector-Base Voltage Technique is due to the greater deviation hctwcen the region of the colleclor junction traversed by the measuring current during calibration and the region traversed during test. 1.2 The Measurement of Thermal Resistance, Junction to Specified Reference Point (ReJR), using the emi
21、tter-base voltage of a transistor in the emitter-only switching mode as the temperature sensitive parameter. 1.2.1 Pwpose. The purpose of the test is to measure the junction to specified reference pain1 lhermal resistance of single element transistors by using the emitter-base junction to indicate t
22、hr device junction temperature. This method is to he used as the standard RS-313.B Page 2 technique, i.e., referee method for the measurement of thertmd resistanct:. Rowever, the procedure is also adaptable to production testing, including die attachment screwing (see Appendix A). 1.2.2 Irocedure. I
23、n mc:;muring transistor thernnd resistance, the emitter-base forward voltage of the transistor is used as the temperature sensitive parameter (TSP) to indicate the junction temperature. The TSP is measured at a small fixed forward current. This low level current, at which the temperature sensitive p
24、arameter is measured, is called the measuring or calibration current (IM). The magnitude of IM is such that the TSP varies linearly with temperature and is stahle. The TSP is measured under two geueral operating conditions. First, the mrasuremeuta of the emitter-base forward wItage necessary to dete
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