JEDEC JESD306-1965 Measurement of Small Signal HF VHF and UHF Power Gain of Transistors.pdf

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1、JEDEC STANDARD Measurement of Small Signal HF, VHF, and UHF Power Gain of Transistors JESD306 (Previously known as RS-306 and/or EIA-306) MAY 1965 (Reaffirmed: April 1981, April 1999, March 2009) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that h

2、as been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers

3、, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and public

4、ations are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The

5、 information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further pr

6、ocessed and ultimately become an ANSI standard. No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the

7、 address below, or call (703) 907-7559 or www.jedec.org Published by JEDEC Solid State Technology Association 2009 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this

8、 file the individual agrees not to charge for or resell the resulting material. PRICE: Please refer to the current Catalog of JEDEC Engineering Standards and Publications online at http:/www.jedec.org/Catalog/catalog.cfm Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This do

9、cument is copyrighted by JEDEC and may not be reproduced without permission. Organizations may obtain permission to reproduce a limited number of copies through entering into a license agreement. For information, contact: JEDEC Solid State Technology Association 3103 North 10th Street Suite 240 Sout

10、h Arlington, VA 22201-2107 or call (703) 907-7559 ? 2 HA STANDARD MEASUREMENT I OF SMALL SIGNAL HF, VHF, AND RS-306 UHF POWER GAIN OF TRANSISTORS I MAY 1965 (Reaffirmed, April 1981) (Reaffirmed, April 1999) Engineering Department ELECTRONIC INDUSTRIES ASSOCIATION NOTICE EIA Engineering Standards and

11、 Publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for his partic

12、ular need. Existence of such Standards and Pub- lications shall not in any respect preclude any member or non-member of EIA from manufacturing or selling products not conforming to such Standards and Publications, nor shall the existence of such Standards and Publications preclude their voluntary us

13、e by those other than EIA members, whether the standard is to be used either domestically or internationally. Recommended Standards and Publications are adopted by EIA and NEMA without regard to whether or not their adoption may involve patents on articles, materials, or processes. By such action, E

14、IA does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the Recommended Standard or Publication. Published by ELECTRONIC INDUSTRIES ASSOCIATION Engineering Department 2001 Eye Street, N.W. Washington, D.C. 20006 NATIONAL ELECTRICAL MANUFAC

15、TURERS ASSOCIATION 2101 L Street, N.W. Washington, DC. 20037 Copyright 1965 ELECTRONIC INDUSTRIES ASSOCIATION NATIONAL ELECTRICAL MANUFACTURERS ASSOCIATION All rights reserved PRICE: $3.00 Printed in U.S.A. MEASUREMENT OF SMALL SIGNAL HF, VHF, AND UHF POWER GAIN OF TRANSISTORS (This Standard was for

16、mulated undw the cognizance of JEDEC Commitee JS-s on Industrial Transistors) INTRODLMITION The transistors shall be tested in the general circuit shown in Figure 1, NEUTRALIZATION NETWORK AND ,PHASE REVERSAL FIGURE 1 The generator shall have an output impedance of 50 ohms. The attenuator shall be d

17、esigned to work in a 50 ohm line. The detector and load shall have a 50 ohm input impedance. Network S, shall be a single-tuned network designed to operate from a 50 ohm source. Network S2 shall be a single-tuned network designed to operate with a 50 ohm load. Network T is a neutralization net- work

18、 and should be used if specified. The common terminal and the operating biases of the transistor under test shall be specified. Good engineering practice must be used in bypassing bias supplies, shielding individual portions of the circuit, and in minimizing the effects of ground currents. The test

19、circuit for the transistor shall be constructed such that it follows in form the speci- Aed test circuit, and it shall have values approximately equal to the nominal values specified for the test circuit. NETWORK S, Network S, shall be so designed that it, in conjunction with the input impedance of

20、the tran- sistor, has a single resonant frequency. It will usually have one or more variable elements which determine the resonant frequency. S, may or may not provide an impedance transformation between the signal generator and the transistor under test. If the power gain measurement. is specified

21、as a fixed source impedance measurement, then SZ may either be a parallel network whose conductance (with the signal generator connected to the input) as presented to the transistor ter- mimds does not vary with any variable elements in S 1, or it may be a series network whose resistance as presente

22、d to the transistor terminals does not vary with any variable element in S,. Network S, shall be made 8s nearly lossless ss possible. Network S1 shall be so designed that with a fixed specified dummy load connected across its output terminals in place of the transistor under test, it shall have, whe

23、n tuned to center frequency, a specified loss and bandwidth if it is a “fixed source” network. If it is a “variable matched” net- Cl1 work, then it shall be so designed as to have a specified loss and bandwidth when connected to each of two fixed specified dummy loads and adjusted for maximum power

24、transfer at the specified center frequency. The variation in the settings of the tuning and matching networks for the two specified dummy loads determines allowable limits of the tuning network. NETWORK Sz Network S?, in conjunction with the output impedance of the transistor, shall be a single-tune

25、d network meeting the same requirements as network 1. When connected to the load and driven from a specified dummy source, it shall have the specified loss and bandwidth (specified for two- different dummy source impedances if a “variable matched” network). The variation in the settings of the tunin

26、g and matching networks for the two specified dummy loads determines allowable limits of the tuning network. NETWORK T Network T shall be included only for measurements of neutralized power gain. If the mcasure- ment as specified is a “Axed neutralized” measurement, then T shall have no variable ele

27、ments and shall be so constructed that with the transistor under test removed, a specified dummy load connected between terminals A and A, a specified dummy source connected between terminals B and B, and with a specified impedance connected between terminals A and B, and with networks S1 and Sp tun

28、ed to center frequency, the reverse attenuation between the load terminals and the signal generator terminals shall be greater than a specified amount. For “variable neutralization” power gain measurements, network T shall be constructed as specified. GENERAL COMMENTS ON NETWORKS S, S:, AND T Net,wo

29、rks S, S2, and T shall be constructed to have a minimum of parasitic capacitance, shall be shielded from one another, and shall be constructed using good engineering practice. III general, an attempt should be made to construct these networks suc.h that any unavoidable parasitic eIe- ments are inclu

30、ded in the specified parts of the network. TYPICAL FORMS OF NETWORKS S, S, AND T Typical network forms which meet the requirements of S, S, and T are shown in Figure 2. These arc given only as a guide and not as a comprehensive list of a11 of the networks which will meet the requirements. METHOD OF

31、MEAWREMENT The signal generator and the load are connected as shown in Figure 1. The signal generator is set to the center frequency, and networks S1 and Sz are adjusted to provide maximum output. The adjustment must be such that if the signal generator is tuned either upward or downward from center

32、 frequency the output power will decrease. If a “variable neutralization” measurement is being made, network T may be adjusted in either one of two ways. (a) (b) The signal generator and the detector shall be interchanged, the attenuators set for zero attenuation, and network T adjusted for minimum

33、power transfer from output to input. The stage shall be considered to be neutralized if the sum of the forward and reverse gain is less than -20 db if the center frequency is below 500 mc, or -10 db if above 500 mc. The signal generator at the input may be replaced with a 50 ohm sweep generator adju

34、sted to provide a swept input frequency which traverses the normal bandpass characteristic of the test circuit. A high impedance detector is placed across the input to network S, all atten$ors are adjusted to 0 db and network T is adjusted such that minimum perturha- tton is observed on the detector

35、 when the output load is alternately shorted and unshorted. When the neutralization is adjusted in this fashion, the reverse attenuation criteria stated above must still be met. S, Fixed Match : S1 Variable Match: o&-?-Y+- S, Fixed Match : Ditto S1 (Interchange Input and Output) Sn Variable Match :

36、Ditto S, (Interchange Input and Output) T Fixed Neu t. : o-It-o T Variable Neut. 0 IJ A 0 FIGURE 2 -TYPICAL 5,. Ss, AND T NETWORKS The adjustment criteria for networks S, S, and T must be simultaneously achieved. This will mean that in some cases an iterative procedure must be used to adjust these n

37、etworks. At a11 times during the adjustment of the network the signal levels must be kept small enough so that the nmplifier is operating in its linear range. The power gain measurement shall be made by a substitution method. The signal generator is connected directly to the detector. The signal gen

38、erator is set for a convenient output and the detector level noted. The signal generator and the detector are then connected to the test circuit and the attenuators adjusted (without changing the signal generator level) so that the detector reads the same reference level. The power gain is then equa

39、l to the sum of the attenuation of the input and output attenuators (it is desirable to have all of the attenuation in the input circuit in order to keep the operating level of the amplifier as small aa possible, however, this may reduce the signal level sufficiently so that noise may upset the accuracy of the measurement. In this case it is desirable to place some of the attenuation in the output circuit). c31