EN 60747-16-3-2002 en Semiconductor devices - Part 16-3 Microwave integrated circuits - Frequency converters (Incorporates Amendment A2 2017)《半导体器件 第16-3部分 微波集成电路 变频器 包含修改件A1-2009》.pdf

《EN 60747-16-3-2002 en Semiconductor devices - Part 16-3 Microwave integrated circuits - Frequency converters (Incorporates Amendment A2 2017)《半导体器件 第16-3部分 微波集成电路 变频器 包含修改件A1-2009》.pdf》由会员分享，可在线阅读，更多相关《EN 60747-16-3-2002 en Semiconductor devices - Part 16-3 Microwave integrated circuits - Frequency converters (Incorporates Amendment A2 2017)《半导体器件 第16-3部分 微波集成电路 变频器 包含修改件A1-2009》.pdf（44页珍藏版）》请在麦多课文档分享上搜索。

1、BRITISH STANDARD BS EN 60747-16-3: 2002+A1:2009 Semiconductor devices Part 16-3: Microwave integrated circuits Frequency converters ICS 31.080.99; 31.200 National foreword This British Standard is the UK implementation of EN 60747-16-3:2002+A1:2009. It is identical with IEC 60747-16-3:2002, incorpor

2、ating amendment 1:2009. It supersedes BS EN 60747-16-3:2002, which is withdrawn. The start and finish of text introduced or altered by amendment is indicated in the text by tags. Tags indicating changes to IEC text carry the number of the IEC amendment. For example, text altered by IEC amendment 1 i

3、s indicated by !“. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors. A list of organizations represented on this committee can be obtained on request to its secretary. This publication does not purport to include all the necessary provisions of a co

4、ntract. Users are responsible for its correct application. Compliance with a British Standard cannot confer immunity from legal obligations. BS EN 60747-16-3:2002+A1:2009 This British Standard, having been prepared under the direction of the Electrotechnical Sector Policy and Strategy Committee, was

5、 published under the authority of the Standards Policy and Strategy Committee on 4 September 2002 BSI 2009 Amendments/corrigenda issued since publication Date Comments 31 October 2009 Implementation of IEC amendment 1:2009 with CENELEC endorsement A1:2009 ISBN 978 0 580 59782 4 EUROPEAN STANDARD EN

6、60747-16-3:2002+A1 NORME EUROPENNE EUROPISCHE NORM April 2009 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2002 CENELEC - All

7、 rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-16-3:2002 E ICS 31.080.99 English version Semiconductor devices Part 16-3: Microwave integrated circuits - Frequency converters (IEC 60747-16-3:2002) Dispositifs semiconducteurs Parie 16-3:

8、 Circuits intgrs hyperfrquences - Convertisseurs de frquence (CEI 60747-16-3:2002) Halbleiterbauelemente Teil 16-3: Integrierte Schaltungen zur Frequenzumsetzung von Mikrowellen (IEC 60747-16-3:2002) This European Standard was approved by CENELEC on 2002-07-01. CENELEC members are bound to comply wi

9、th the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretar

10、iat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the

11、official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom.

12、EN 64707-61-32:200 - 2 Foreword The text of document 47E/212/FDIS, future edition 1 of IEC 60747-16-3, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor device, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60747-16-3 on 2002-07-01. Th

13、e following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2003-04-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2005-07-01 Les annexes

14、appeles “normatives“ font partie du corps de la norme. Dans la prsente norme, lannexe ZA est normative. Lannexe ZA a t ajoute par le CENELEC. _ Endorsement notice The text of the International Standard IEC 60747-16-3:2002 was approved by CENELEC as a European Standard without any modification. _ For

15、ewordtoamendmentA1 The text of document 47E/357/CDV, future amendment 1 to IEC 60747-16-3:2002, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as amendment A1 to EN 60747-16-3:2002 on

16、 2009-04-01. The following dates were fixed: latest date by which the amendment has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2010-01-01 latest date by which the national standards conflicting with the amendment have to be withdrawn

17、(dow) 2012-04-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of amendment 1:2009 to the International Standard IEC 60747-16-3:2002 was approved by CENELEC as an amendment to the European Standard without any modification. _ Page 2 BS EN 60747-16-3:2002+A1:2009 EN 60747-16-3:200

18、2+A1:2009CONTENTS 1 Scope.4 2 Normative references .4 3 Terms and definitions .4 4 Abbreviated terms 6 5 Essential ratings and characteristics.6 5.1 General .6 5.2 Application description 7 5.3 Specification of the function 8 5.4 Limiting values (absolute maximum rating system) 9 5.5 Operating condi

19、tions (within the specified operating temperature range) .11 5.6 Electrical characteristics11 5.7 Mechanical and environmental ratings, characteristics and data12 5.8 Additional information12 6 Measuring methods 13 6.1 General .13 6.2 Conversion gain (G c ) .14 6.3 Conversion gain flatness (DG c )16

20、 6.4 LO/IF isolation (P LO /P LO(IF) ) .18 6.5 LO/RF isolation (P LO /P LO(RF) ).20 6.6 RF/IF isolation.21 6.7 Image rejection (P o /P o(im) ) 25 6.8 Sideband suppression (P o /P o(U) ).26 6.9 Output power (P o )28 6.10 Output power at 1-dB conversion compression (P o(1dB) )29 6.11 Noise figure (F)

21、.30 6.12 Intermodulation distortion (P n /P 1 )32 6.13 Output power at the intercept point (for intermodulation products) (P n(IP) ) .35 6.14 LO port return loss (L ret(LO) ) 36 6.15 RF port return loss (L ret(RF) ) 37 6.16 IF port return loss (L ret(IF) ).39 Figure 1 Electrical terminal symbols.9 F

22、igure 2 Circuit diagram for the measurement of conversion gain 14 Figure 3 Circuit diagram for the measurement of the LO/IF isolation 18 Figure 4 Circuit diagram for the measurement of the LO/RF isolation.20 Figure 5 Circuit diagram for the measurement of the RF/IF isolation for type A 21 Figure 6 C

23、ircuit diagram for the measurement of the RF/IF isolation for type B 23 Figure 7 Circuit diagram for measurement of noise figure 30 Figure 8 Circuit for the measurement of intermodulation distortion.33 Figure 9 Circuit for the measurement of the LO port return loss .36 Figure 10 Circuit for the meas

24、urement of the RF/IF port return loss .38 Table 1 Function of terminal.8 Table 2 Electrical limiting values10 Table 3 Electrical characteristics12 Page 3 BS EN 60747-16-3:2002+A1:2009 EN 60747-16-3:2002+A1:2009SEMICONDUCTOR DEVICES Part 16-3: Microwave integrated circuits Frequency converters 1 Scop

25、e This part of IEC 60747 provides new measuring methods, terminology and letter symbols, as well as essential ratings and characteristics for integrated circuit microwave frequency converters. 2 Normative references The following referenced documents are indispensable for the application of this doc

26、ument. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60617, Graphical symbols for diagrams IEC 60748-2:1997, Semiconductor devices Integrated circuits Part 2: Digital integrated circ

27、uits IEC 60748-3, Semiconductor devices Integrated circuits Part 3: Analogue integrated circuits IEC 60748-4, Semiconductor devices Integrated circuits Part 4: Interface integrated circuits 3 Terms and definitions For the purpose of this part of IEC 60747, the following terms and definitions apply:

28、3.1 conversion gain, G c ratio of the desired converted output power to the input power NOTE Usually, the conversion gain is expressed in decibels. 3.2 conversion gain flatness, DG c difference between the maximum and the minimum conversion gain for a specified input power in a specified frequency r

29、ange 3.3 LO/RF isolation, P LO /P LO(RF) ratio of the incident local power to the local leakage power at the RF port with the IF port terminated in a specified impedance IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60050-702:1992, International Electrotechnical Vocabulary Chapter 702:

30、 Oscillations, signals and related devices ! “ ! IEC 60747-16-1:2001, Semiconductor devices Part 16-1: Microwave integrated circuits Amplifiers Amendment 1 (2007) 1IEC 61340-5-1:2007, Electrostatics Part 5-1: Protection of electronic devices from electrostatic phenomena General requirements IEC/TR 6

31、1340-5-2:2007, Electrostatics Part 5-2: Protection of electronic devices from electrostatic phenomena User guide 1There exists a consolidated edition 1.1 published in 2007, including the base publication (2001) and its Amendment 1 (2007). “ ! “ Page 4 BS EN 60747-16-3:2002+A1:2009 EN 60747-16-3:2002

32、+A1:2009067-7416-3 CEI:0220(E) 5 3.4 LO/IF isolation, P LO /P LO(IF) ratio of the incident local power to the local leakage power at the IF port with the RF port terminated in a specified impedance 3.5 RF/IF isolation, P RF /P RF(IF) ratio of the incident RF power to the RF feedthrough power at the

33、IF port for a specified local power NOTE Usually, the RF/IF isolation is applied to the down-converter. 3.6 IF/RF isolation, P IF /P IF(RF) ratio of the incident IF power to the IF feedthrough power at the RF port for a specified local power NOTE Usually, the IF/RF isolation is applied to the up-con

34、verter. 3.7 image rejection, P o /P o(im) ratio of the output power when the RF signal is applied, to the output power when the image signal is applied NOTE Usually, the image rejection is applied to the down-converter. 3.8 sideband suppression, P o /P o(U) ratio of the output power of the desired s

35、ideband to the output power of the undesired sideband NOTE Usually, the sideband suppression is applied to the up-converter. 3.9 LO port return loss, L ret(LO) ratio of the specified incident power at the LO port to the reflected power at the LO port, with the RF port and the IF port terminated in e

36、ach specified impedance 3.10 RF port return loss, L ret(RF) ratio of the incident power at the RF port to the reflected power at the RF port for a specified local power, with the IF port terminated in a specified impedance 3.11 IF port return loss, L ret(IF) ratio of the incident power at the IF por

37、t to the reflected power at the IF port for a specified local power, with the RF port terminated in a specified impedance 3.12 output power, P o see IEC 60747-16-2, 3.3 1 3.13 output power at 1-dB conversion compression, P o(1dB) output power where the conversion gain decreases by 1 dB compared with

38、 the linear conversion gain 1IEC 60747-16-2:2001, Semiconductor devices Part 16-2: Microwave integrated circuits Frequency prescalers Page 5 BS EN 60747-16-3:2002+A1:2009 EN 60747-16-3:2002+A1:2009 6 607-7416-3 CEI :0220(E) 3.16 output power at the intercept point (for intermodulation products), P n

39、(IP) output power at the intersection between the extrapolated output powers of the fundamental component and the nth order intermodulation components, when the extrapolation is carried out in a diagram showing the output power of the components (in decibels) as a function of the input power (in dec

40、ibels) 4 Abbreviated terms The abbreviations used in this part of IEC 60747 are as follows: RF Radio Frequency; IF Intermediate Frequency; LO Local Oscillator. 5 Essential ratings and characteristics 5.1 General This clause gives ratings and characteristics required for specifying integrated circuit

41、 microwave frequency converters. 5.1.1 Circuit identification and types 5.1.1.1 Designation and types The identification of type (device name), the category of circuit and technology applied shall be given. Microwave frequency converters are divided into two categories: type A: down-converter; type

42、B: up-converter. 5.1.1.2 General function description A general description shall be made of the function performed by the integrated circuit microwave frequency converters and the features for the application. 5.1.1.3 Manufacturing technology The manufacturing technology, for example, semiconductor

43、 monolithic integrated circuit, thin film integrated circuit, micro-assembly, shall be stated. This statement shall include details of the semiconductor technologies such as Schottoky-barrier diode, MESFET, Si bipolar transistor, HBT. 3.14 noise figure, F see 702-08-57 of IEC 60050-702 NOTE The term

44、 “noise figure“ expresses “noise factor“ in decibels. 3.15 intermodulation distortion, P 1 /P nsee 3.7 of Amendment 1 of IEC 60747-16-1 ! “ Page 6 BS EN 60747-16-3:2002+A1:2009 EN 60747-16-3:2002+A1:2009067-7416-3 CEI:0220(E) 7 5.1.1.4 Package identification The following shall be stated: a) chip or

45、 packaged form; b) IEC and/or national reference number of the outline drawing, or drawing of non-standard package including terminal numbering; c) principal package material, for example, metal, ceramic, plastic; d) for chip form: outlines, dimensions, pad sizes, contact material, and recommended c

46、ontact technologies. 5.1.1.5 Main application The main application shall be stated if necessary. If the device has restrictive applications, these too shall be stated here. 5.2 Application description Information on the application of the integrated circuit and its relation to the associated devices

47、 shall be given. 5.2.1 Conformance to system and/or interface information It shall be stated whether the integrated circuit conforms to an application system and/or an interface standard or recommendation. Detailed information about application systems, equipment and circuits such as VSAT systems, D

48、BS receivers, microwave landing systems shall also be given. 5.2.2 Overall block diagram A block diagram of the applied systems shall be given if necessary. 5.2.3 Reference data The most important properties required to permit comparison between derivative types shall be given. 5.2.4 Electrical comp

49、atibility It shall be stated whether the integrated circuit is electrically compatible with other particular integrated circuits or families of integrated circuits, or whether special interfaces are required. Details shall be given concerning the type of the input and output circuits, for example, input/output impedan