EN 169000-1998 en Generic Specification Quartz Crystal Controlled Oscillators (Incorporates Amendment A1 1998)《通用规范 石英晶体振荡器 包含修改件A1-1998 替代CECC 69000 第1版-1991》.pdf

《EN 169000-1998 en Generic Specification Quartz Crystal Controlled Oscillators (Incorporates Amendment A1 1998)《通用规范 石英晶体振荡器 包含修改件A1-1998 替代CECC 69000 第1版-1991》.pdf》由会员分享，可在线阅读，更多相关《EN 169000-1998 en Generic Specification Quartz Crystal Controlled Oscillators (Incorporates Amendment A1 1998)《通用规范 石英晶体振荡器 包含修改件A1-1998 替代CECC 69000 第1版-1991》.pdf（115页珍藏版）》请在麦多课文档分享上搜索。

1、BRITISH STANDARD Harmonized system of quality assessment for electronic components Generic specification: Quartz crystal controlled oscillators The European Standard EN 169000 : 1992, with the incorporation of amendment Al : 1998, has the status of a British Standard ICs 29.300 NO COPYING WITHOUT BS

2、I PERMISSION EXCEPT AS PERMIITED BY COPYRIGHT LAW BS EN 169000 : 1993 Incorporating Amendment No. 1 BS EN 169oOo : 1993 Iscue 2, July 1998 July 1998 10024 Cooperating organizations Indicated by a sideline in the margin /lb together with the voting report, circulated as document CECC (Secretaria) 345

3、4, it was approved as amendment Al to EN 16QO : 1992 on 1993-1142. The following dates were fix 1; is the sample time over which measurement is averaged; M is the number of measurements. This is a specific form of the general M-sample variance. 2.3.23 rms fractional frequency fluctuation (679-1) A m

4、easure in the time domain of the short-term frequency stability of an oscillator, based on the statistical properties of a number of frequency measurements, each representing an average of the instantaneous frequency over the specified sampling interval. The preferred measure of fractional frequency

5、 fluctuation is 2.3.24 Phase noise (phase jitter) (679-1) A frequency-domain measure of the short-term frequency stability of an oscillator normally expressed as the power spectral density of the phase fluctuations, Sy(f), where the phase fluctuation function is 4 (t) = 271Ft - 2xF0t. Spectral densi

6、ty of phase fluctuation can be directly related to the spectral density of frequency fluctuation by where F = oscillator frequency Fo = average oscillator frequency f = Fourier frequency 2.3.25 Spectral purity (679-1) A measure of frequency stability in the frequency domain usually represented as th

7、e single side noise power spectrum expressed in decibels relative to total signal power, per hertz bandwidth. It includes non-deterministic noise power, harmonic distortion components, and spurious single frequency interferences. CECC 69 O00 Issue 1 Page 13 EN 169000 : 1992 2.3.26 Incidental frequen

8、cy modulation (679-1) An optional measure of frequency stability in the frequency domain. Incidental f.m. is best described in terms of the spectrum of the resultant base-band signal obtained by applying the oscillator signal to an ideal discriminator circuit of specified characteristics. If the det

9、ection bandwidth is adequately specified, the incidental f.m. may be expressed as a fractional proportion of the output frequency (for example 2 x 108 r.m.c. in a 10 kHz band). 2.3.27 Amplitude modulation distortion (679-1) Non-linear distortion in which the relative magnitudes of spectral component

10、s of the modulating signal waveform are modified, also commonly known as frequency distortion, amplitude distortion, and amplitude-frequency distortion. 2.3.28 Linearity of frequency modulation deviation (679-1) A measure of the transfer characteristic of a modulation system as compared to an ideal

11、(straight line) function, usually expressed as an allowable non-linearity in per cent of specified full range deviation. Modulation linearity can also be expressed in terns of the permissible distortion of base-band signals produced by the modulation device (for example intermodulation and harmonic

12、distortion products not to exceed -40 dB relative to the total modulating signal power). Example : Figure 2 is a plot of the output frequency of a typical modulated oscillator specified to have a modulation characteristic of 133.3 Hz/V over a range of +3 V, with an allowed non-linearity of +5 %. (cu

13、rve A) and the limits (curves B and C). Curve D is the actual characteristic compared with the ideal - 2.3.29 Harmonic distortion (679-1) A non-linear distortion characterized by the generation of undesired spectral components harmonically related to the desired signal frequency. Each harmonic compo

14、nent is usually expressed as a power ratio (in decibels) relative to the output power of the desired signal. 2.3.30 Spurious oscillations (679-1) Discrete frequency spectral components, non-harnonically related to the desired output frequency, appearing at the output terminal of an oscillator. These

15、 components may appear as symmetrical sidebands, or as single spectral components, depending upon the mode of generation, Spurious components in the output spectrum are usually expressed as a power ratio (in decibels) with respect to the output signal power. CECC 69 O00 Issue i Page 14 EN 169000 : 1

16、992 Teiicion Voltage (VI Figure 2. Typical frequency fluctuation characteristics. 2.3.31 Pulse duration The time interval between the points on the leading and trailing edge of a pulse waveform at which the function equals a specified value. 2.3.32 Ri se time The time interval required for the leadi

17、ng edge of a waveform to change between two defined levels. levels UIL and UIH or 10 % to 90 % of its maximum amplitude (UHI - UL) or any other ratio defined in the detail specification (see Fig. 3). These levels may be two logic where UI = low level input voltage LI = high level input voltage 2.3.3

18、3 Decay (or fall) time The time interval required for the trailing edge of a waveform to change between two defined levels. These levels may be two logic levels UIH and UIL or 90 X to 10 % of its maximum amplitude (UHI - UL) specification (see Fig. 3). or any other ratio as defined in the detail CEC

19、C 69 O00 Issue 1 Issue 2, July 1998 Rage 16 EN 169000 : 1992 Il Rise time Decay time Figure 3. Symmetry (Nark/space ratio or duty cycle) Characteristics of an output waveform. 2.3.34 The ratio between the time (ti), in which the output voltage is above a specified level, and the time (tz), in which

20、the output voltage is below the specified level, in percent of the duration of the full signal period. The specified level may be the arithmetic mean between UIL and UZH, or 50 % of the peak-to-peak amplitude (see Fig. 3). The ratio being expressed as: Loot1 : loot2 tl i- t2 tl + t2 2.3.35 Startup t

21、ime 2.3.36 (1) Amplitude The time taken after the application of power for the oscillator output to reach 90 5: of the final amplitude. (2) Frequency The time taken after the application of power for the oscillator output to attain the crystal controlled frequency. Tri-state output An output stage w

22、hich may be enabled or disabled by the application of an input control signal. In the disable mode the output impedance of the gate is set to a high level permitting the application of test signals to following stages. I 2.3.37 Storaae termerature The minimum and maximum temperature as measured on t

23、he enclosure at which the quartz crystal controlled oscillator may be stored without deterioration or damage to its perf ormance. 2.3.38 Retrace characteristics The ability of an oscillator to return to within specified limits of a previously stabilized frequency, following a storage period in the u

24、nenergized condition. CECC 69 O00 Issue 1 8 BSI 1998 Page 16 EN 169000 : 1992 2.4 2.4.1 2.4.2 2.4.3 Preferred ratings and characteristics Climatic category 40/085/56 For requirements where the operating temperature range of the quartz crystal controlled oscillator is greater than -40 OC to +85 OC, a

25、 climatic category consistent with the operating temperature range shall be specified. Bump severity 4 O00 + 10 bumps at 400 m/s2 peak acceleration in each direction along three mutually perpendicular axes (see 4.6.6) Pulse duration 6 ms. Vibration severity Sinusoidal 10 Hz to 55 Hz 0.75 mm displace

26、ment amplitude (peak value). 55 Hz to 500 Hz or 55 Hz to 2 O00 Hz 100 m/s2 acceleration ampli tude (peak value). 10 Hz to 55 Hz 1,5 mm displacement amplitude (peak value) 55 Hz to 2 O00 Hz 200 m/s2 acceleration amplitude (peak value) Random (19,2 m/s2)2/Hz between 20 Hz and 2 O00 Hz 196 m/s2 acceler

27、ation or (48 m/c2)2/Hz between 20 Hz and 2 O00 Hz 3 14 m/s2 acceleration 30 minutes in each of 3 mutua 1 1 y pe rp e nd i c u la r axes at i octave/minute. (See 4.6.7). 30 minutes in each of 3 mutually perpendicular axes at i octave/minute. (See 4.6.7) 30 minutes in each of 3 mutually perpendicular

28、axes at i octave/rninute. (See 4.6.7) CECC 69 O00 Issue i Issue 2, July 1998 Page 17 EN 169OOO : 1992 2.4.4 Shock sever? ty 1 O00 m/s2 peak acceleration for 6 ms duration ; three shocks in each direction along three mutually perpendicular axes (See 4.6.8) half sine pulse, unless otherwise stated in

29、the detall specification 2.4.5 Leak rate 10-1 Pa. cm3/s 10-3 Pa. cm3/s 2.5 mbar.l/s) (108 mbar. 1/s) 2.5.1 The quartz crystal controlled oscillator shall be clearly and durably marked (see 4.6.21) with (i) to (7 in the order below and with as many possible of the remaining items as considered necess

30、ary. (1) I Type designation as defined in the detail specification (2) Nominal frequency in kHz or BIZ (3) Year and week of manufacture (4) Mark of conformity (unless a certificate of conformity is used). (5) Factory identification code (6) Manufacturers name or trade mark (7) Terminal identificatio

31、n (8) Designation of electrical connections (9) Power supply voltage and polarity (if applicable) (10) Serial number (if applicable) (11) Surface mount device classification (if applicable) (see 6.2 of CECC O0 802) Where the available surface area of miniature quartz crystal controlled oscillators i

32、mposes practical limits in the amount of marking, instructions on the marking to be applied shall be given in the detail specification. 2.5.2 The primary packaging containing the quartz crystal controlled oscillator(s) shall be clearly marked with the information listed in 2.5.1 except item (7) and

33、Electrostatic Sensitive Device (ESD) identification where necessary. Q BSI 1998 CECC 69 O00 Issue 1 Page 18 EN 169000 : 1992 SECTION 3 - QUALITY ASSESSMENT PROCEDURES Two methods are available .for the approval of quartz crystal controlled oscillators of assessed quality. They are qualification appr

34、oval and capability approval. 3.1 3.2 Primary stage of manufacture The primary stage of manufacture for a quartz crystal controlled oscillator in accordance with 52.2.6 of CECC O0 111 Partmshall be as follows: (1) For oscillators incorporating a sealed crystal unit - the assembly of the quartz cryst

35、al controlled oscillator (2) For oscillators incorporating an unencapsulated crystal unit - the final surface finishing of the crystal element in addition to the assembly of the oscillator Note: The final surface finishing of the crystal element could be any of the following operations: lapping; pol

36、ishing; etching; cleaning, in the case of polished plates. Structurally similar components The grouping of structurally similar crystal controlled oscillators for the purpose of qualification approval, capability approval and quality conformance inspection shall be prescribed in the relevant section

37、al specification. 3.3 Subcontracting These procedures shall be in accordance with 1.2 of CECC O0 114 Part II or 52.2 of CECC O0 114 Part III. There shall be no subcontracting after the assembly of the crystal to the electronic circuit except in the case of sealed crystal units where the sealing of t

38、he final enclosure of the oscillator may be permitted. 3.4 Incorpo rat ed components Where incorporated components are used the requirements of g2.3 of CECC O0 114 Part III shall apply. 3.5 Manufacturers approval To obtain manufacturers approval the manufacturer shall meet the requirements of fi 1 o

39、f CECC O0 114 Part I. CECC 69 O00 Issue 1 Page 19 EN 169000 : 1992 3.6 Avvroval Drocedures 3.6.1 General To qualify a quartz crystal controlled oscillator, either capability approval or qualification approval procedures may be used. These procedures conform to those stated in CECC O0 114 Part III an

40、d Part II. 3.6.2 Capability approval Capability approval is appropriate when structurally similar quartz crystal controlled oscillators based on common design rules, are fabricated, by a group of common processes. Under capability approval detail specifications fall into the following three categori

41、es. (i) Capability qualifying components (CQCs) -4 detail specification shall be prepared in accordance with 94.2 of CECC O0 114 Part III for each CQC as agreed with the ONS. It shall identify the purpose of the CQC and include all relevant stress levels and test limits. (2) Standard catalogue items

42、 When a component covered by the capability approval procedure is intended to be offered as a standard catalogue item and listed in CECC O0 200 : Qualified Products List, the procedures of 54.3 of CECC O0 114 Part III shall apply. specification shall comply with the blank detail specification. The d

43、etail (3) Custom built quartz crystal controlled oscillators The content of the detail specification shall be by agreement between the manufacturer and the customer in accordance with $4.2 of CECC O0 114 Part III. Further information on detail specifications is contained in the sectional specificati

44、on CECC 69 100. The product and capability qualifying components (CQCs) are tested in combination and approval given to a manufacturing facility on the basis of validated design rules, processes and quality control procedures. Further information is given in 3.7 and in the sectional specification CE

45、CC 69 100. 3.6.3 Qualification approval Qualification approval is appropriate for components manufactured to a standard design and established production process and conforming to a published detail specification. The programme of tests defined in the detail specification for the appropriate assessm

46、ent and severity level applies directly to the quartz crystal controlled oscillator to be qualified, as prescribed in 3.8 and the sectional specification CECC 69 200. CECC 69 O00 Issue 1 - STDwBSI BS EN 169000-ENGL 1993 1624669 07LBLOB 772 Page 20 EN 169000 : 1992 3.7 3.7.1 3.7.2 307.3 3.7.4 3.7.5 3

47、 .a 3.8.1 3.8.2 Procedures for capability approval General The procedures for capability approval shall be in accordance with CECC O0 124 Part III. Eligibility for capability approval The manufacturer shall comply with the requirements of 2.1 of CECC O0 114 Part III and the primary stage of manufact

48、ure as defined in 3.1 of this generic specification. Application for capability approval In order to obtain capability approval the manufacturer shall apply the rules of procedure given in 82.4 of CECC O0 114 Part III. Granting of capability approval Capability approval shall be granted when the pro

49、cedures in accordance with 82.7 of CECC O0 114 Part III have been successfully completed, Description of capability The contents of the description of capability shall be in accordance with the requirements of the sectional specification. The ONS shall treat the description of capability as a confidential document. The manufacturer may, if he so wishes, disclose part or all of it to a third party. Procedures for qualification approval General The procedures for qualification approval shall be in accordance with CECC O0 114 Part II. Eligibility for qualification appr