DLA SMD-5962-97641 REV C-2012 MICROCIRCUIT LINEAR ULTRA HIGH FREQUENCY ALL NPN TRANSISTOR ARRAY MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with N.O.R. 5962-R169-98. 98-09-10 R. MONNIN B Add a dose rate footnote under paragraph 1.5 and Table I. Delete Neutron and Dose rate induced latchup testing. Redrawn. - ro 05-11-09 R. MONNIN C Update drawing to current requ

2、irements of MIL-PRF-38535. -rrp 12-05-16 C. SAFFLE REV SHEET REV SHEET REV STATUS REV C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING

3、IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, ULTRA HIGH FREQUENCY, ALL NPN TRANSISTOR ARRAY, MONOLITHIC SILICON DRAWING APPROVAL DATE 97-10-28 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 6

4、7268 5962-97641 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E349-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97641 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 AP

5、R 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When

6、 available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 97641 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) L

7、ead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA lev

8、els and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-6254RH Radiation hardened, dielectrically isolated, ultra high frequency

9、 all NPN transistor array 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B

10、microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X

11、CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

12、A 5962-97641 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Collector to emitter voltage (open base) +8 V Collector to base voltage (shorted base) . +12 V dc Emitter to base voltage (reversed bias) . +5.5 V dc Collector

13、 current at 100% duty cycle, 175C 11.3 mA Junction temperature (TJ) +175C Storage temperature range -65C TA +150C Lead temperature (soldering, 10 seconds) . +265C Thermal resistance, junction-to-case (JC): Case E . 30C/W Case X . 28C/W Thermal resistance, junction-to-ambient (JA): Case E . 90C/W Cas

14、e X . 120C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) . -55C TA +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 300 krads (Si) 2/ Latch-up None 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and

15、handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circu

16、its, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 -

17、 Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the

18、text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to

19、the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the co

20、nditions specified in MIL-STD-883, method 1019, condition A. 3/ Guaranteed by process or design. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97641 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION

21、LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the

22、QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design,

23、 construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal conn

24、ections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance chara

25、cteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The ele

26、ctrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the ent

27、ire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for devic

28、e class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A

29、. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufact

30、urer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q

31、 and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix

32、A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that

33、affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made

34、 available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted witho

35、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97641 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups De

36、vice type Limits Unit Min Max Collector to base breakdown voltage V(BR)CBOIC= 100 A, IE= 0 1,2,3 01 12 V M,D,P,L,R,F 1/ 2/ 1 12 Collector to emitter breakdown voltage V(BR)CEOIC= 100 A, IB= 0 1,2,3 01 8 V M,D,P,L,R,F 1/ 2/ 1 8 Collector to emitter breakdown voltage V(BR)CESIC= 100 A, base shorted to

37、 emitter 1,2,3 01 10 V M,D,P,L,R,F 1/ 2/ 1 10 Emitter to base breakdown voltage V(BR)EBOIE= 10 A, IC= 0 1,2,3 01 5.5 V M,D,P,L,R,F 1/ 2/ 1 5.5 Collector cutoff current ICEOVCE= 6 V, IB= 0 1,2,3 01 100 nA M,D,P,L,R,F 1/ 2/ 1 100 Collector cutoff current ICBOVCE= 8 V, IE= 0 1,2,3 01 10 nA M,D,P,L,R,F

38、1/ 2/ 1 10 Collector to emitter saturation voltage VCE(SAT)IC= 10 mA, IB= 1 mA 1,2,3 01 0.5 V M,D,P,L,R,F 1/ 2/ 1 0.5 Base to emitter voltage VBEIC= 10 mA 1 01 0.95 V 2,3 1.05 M,D,P,L,R,F 1/ 2/ 1 1.05 DC forward current transfer ratio hFEIC= 10 mA, VCE= 2 V 1 01 40 2,3 20 M,D,P,L,R,F 1/ 2/ 1 20 Earl

39、y voltage VAIC= 1 mA, VCE= 3.5 V 1,2,3 01 20 V M,D,P,L,R,F 1/ 2/ 1 20 1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R, and F of irradiation. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiat

40、ion electrical measurements for any RHA level, TA= +25C. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 10

41、19, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97641 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines E and X Termi

42、nal number Terminal symbol 1 Q1 collector 2 Q2 collector 3 Q2 emitter 4 Q2 base 5 NC 6 Q3 collector 7 Q3 emitter 8 Q3 base 9 Q4 base 10 Q4 emitter 11 Q4 collector 12 Q5 collector 13 Q5 emitter 14 Q5 base 15 Q1 base 16 Q1 emitter NOTES: Transistors are all NPNs. NC = No connect. FIGURE 1. Terminal co

43、nnections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97641 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For

44、 device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling

45、 and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, sc

46、reening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be mainta

47、ined by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of

48、MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall