DLA SMD-5962-96815 REV A-2000 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS 8-BIT TTL BTL TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《双极互补金属氧化物半导体 四重2输入排外与门硅单片电路数字微电路》.pdf

《DLA SMD-5962-96815 REV A-2000 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS 8-BIT TTL BTL TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《双极互补金属氧化物半导体 四重2输入排外与门硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96815 REV A-2000 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS 8-BIT TTL BTL TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《双极互补金属氧化物半导体 四重2输入排外与门硅单片电路数字微电路》.pdf（19页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Correct the V CC limits and V OL minimum limit in table I. Add IOZPU and IOZPD totable I. Update boilerplate. - CFS00-07-12 Monica L. PoelkingREVSHEETREV A A A ASHEET 15 16 17 18REV STATUS REV A A A A A A A A A A A A A AOF SHEETS SHEET 1 2 3 4 5 6

2、 7 8 9 10 11 12 13 14PMIC N/A PREPARED BYJoseph A. Kerby DEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYCharles F. Saffle, Jr.COLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS,8-BIT TTL

3、/BTL TRANSCEIVER WITH THREE-STATEAND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE96-06-12OUTPUTS, MONOLITHIC SILICONAMSC N/A REVISION LEVELASIZEACAGE CODE67268 5962-96815SHEET 1 OF 18DSCC FORM 2233APR 97 5962 -E348-00DISTRIBUTION STATEMENT A . Approved for public release; distribution

4、is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96815DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents tw

5、o product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance

6、 (RHA) levels are reflected in the PIN.1.2 PIN . The PIN is as shown in the following example:5962 - 96815 01 Q X X * * * * * * * * * * * * * * * * Federal RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5

7、) / ( see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with

8、 the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 54FB2040 8-bit TTL/BTL transceivers with three-stateoutputs1.2.3 Device class designator . The dev

9、ice class designator is a single letter identifying the product assurance level as follows:Device class Device requirements documentationM Vendor self -certification to the requirements for MIL-STD-883 compliant,non -JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V C

10、ertification and qualification to MIL-PRF-385351.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleX GDFP1-F56 56 Flat pack1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for de

11、vice classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96815DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3DSCC FORM

12、2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CC ) . -0.5 V dc to +7.0 V dcDC output voltage range applied to any Bn outputs in thedisabled or power-off state (V OUT ) - 0.5 V dc to +3.5 V dcVoltage range applied to any output in the high state (A port) . -0.5 V dc to V

13、 CCDC input vo ltage range (V IN ):e xcept Bn ports . -1.2 V dc to +7.0 V dc 4 /Bn ports -1.2 V dc to +3.5 V dc 4 /DC input cl amp current (I IK ):e xcept Bn ports . -40 mABn ports -18 mADC output current (I OL ) per output:A port +48 mABn ports +200 mACase operating temperature range (T C ) . -55 C

14、 to +125 CMaximum power dissipation (P D ) 1345 mW 5 /Storage temperature range (T STG ) -65 C to +150 CLead temperature (soldering, 10 seconds) +300 CThermal resistance, junction -to -case ( JC ) . See MIL-STD-1835Junction temperature (T J ) . +175 C1.4 Recommended operating conditions . 2 / 3 /Sup

15、ply voltage range (V CC , BIAS V CC , BG V CC ) . +4.75 V dc to +5.25 V dcHigh level input voltage range (V IH ):Bn port s +1.62 V dc to +2.3 V dc 6 /except Bn ports . +2.0 V dcLow level input voltage range (V IL ):Bn port s +0.75 V dc to +1.47 V dc 6 /except Bn ports . +0.8 V dcDC input clamp curre

16、nt (I IK ) -18 mACase operating temperature range (T C ) . -55 C to +125 C1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / Unless otherwise noted, all voltages are refer

17、enced to GND.3 / The limits for the parameters specified herein shall apply over the full specified V CC range and case temperature range of-55 C to +125 C. Unused inputs must be held high or low.4 / The input and output negative-voltage ratings may be exceeded provided that the input and output cla

18、mp-current ratings areobserved.5 / Power dissipation values are derived using the formula P D = V CC I CC + nV OL I OL , where V CC and I OL are as specified in 1.4above, I CC and V OL are as specified in table I herein, and n represents the total number of outputs.6 / This parameter is based on cha

19、racterization data, but is not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96815DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUME

20、NTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a partof this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in theissue of the Department of Defense Index of Sp

21、ecifications and Standards ( DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Micr ocircuits.MIL-STD-973 - Configur

22、ation Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings ( SMDs ).MIL-HDBK-780 - Standard Mi crocircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handb

23、ooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Non-Government publications . The following document(s) form a part of this document to the extent specified herein.Unless otherwise specified, the issues of the document

24、s which are DOD adopted are those listed in the issue of the DODISS citedin the solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the documentscited in the solicitation.INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS (IEEE)IEEE Standard 11

25、49.1 - IEEE Standard Test Access Port and Boundary Scan Architecture.IEEE Standard 1194.1 - IEEE Standard for Electrical Characteristics of Backplane Transceiver Logic (BTL) InterfaceCircuits.(Applications for copies should be addressed to the Institute of Electrical and Electronics Engineers, 445 H

26、oes Lane, Piscataway,NJ 08854-4150.)(Non-Government standards and other publications are normally available from the organizations that prepare or distribute thedocuments. These documents may also be available in or through libraries or other informational services.)2.3 Order of precedence . In the

27、event of a conflict between the text of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specificexemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The indivi

28、dual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual i

29、tem requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96815DEFENSE SUPP

30、LY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 5DSCC FORM 2234APR 973.2 Design, construction, and physical dimensions . The design, construction, and physical dimensions shall be as specified inMIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and h

31、erein for device class M.3.2.1 Case outline . The case outline shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connections shall be as specified on figure 1.3.2.3 Truth table . The truth table shall be as specified on figure 2.3.2.4 Logic diagram . The logic diagra

32、m shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specified on figure 4.3.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, the electricalperformance c

33、haracteristics and postirradiation parameter limits are as specified in table I and shall apply over the full caseoperating temperature range.3.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table II. The electrical testsfor each subgroup are de

34、fined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option

35、of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Markingfor device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/comp

36、liance mark . The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q and V, a certificate of compliance

37、shall be required from a QML -38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herei

38、n). The certificate of compliance submitted to DSCC -VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 andherein or for device class M, the requirements of MIL-PRF-38535

39、, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as required for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered tothis drawing.3.8 Notification of change for dev

40、ice class M . For device class M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring act

41、ivity retain theoption to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be in mi

42、crocircuitgroup number 126 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96815DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 6DSCC FORM 2234APR 9

43、7TABLE I. Electrical performance characteristics .Test andMIL -STD -883test method 1 /Symbol Test conditions 2 /-55 C T C +125 C+4.75 V V CC +5.25 VV CC Group AsubgroupsLimits 3 / Unitunless otherwise specified Min MaxNegative inputclamp voltageV IK Bn port, I IN = -18 mA4.75 V 1, 2, 3 -1.2 V3022 Ex

44、cept Bn port, IIN = -40 mA -1.2High level outputVoltage, AOn port3006V OH I OH = -3.0 mA 4.75 V 1, 2, 3 2.5 VLow level output V OL AOn port I OL = 24 mA 4.75 V 1, 2, 3 0.5 Vvoltage Bn port IOL = 80 mA 0.70 1.13007 IOL = 100 mA 1.2Input current,Except Bn portI IN For input under test, V IN = 5.25 V 5

45、.25 V 1, 2, 3 50.0 AInput current high,Except Bn port3010I IH4 /For input under test, V IN = 2.7 V 5.25 V 1, 2, 3 50.0 AInput current low3009I IL4 /Except Bn port, V IN = 0.5 V 5.25 V 1, 2, 3 -50.0 ABn port, V IN = 0.75 V -100.0Output current I OHBn port, V OUT = 2.1 V 0.0 Vand5.25 V1, 2, 3 100.0 AT

46、hree-state outputleakage current high3021I OZH5 /AOn port, V OUT = 2.7 V 5.25 V 1, 2, 3 50.0 AThree-state outputleakage current low3020I OZL5 /AOn port, V OUT = 0.5 V 5.25 V 1, 2, 3 -50.0 AThree-state outputleakage currentpower-upI OZPU An port, V OUT = 0.5 V to 2.7 V 0.0 Vto2.1 V1, 2, 3 50.0 AThree

47、-state outputleakage currentpower-downI OZPD An port, V OUT = 0.5 V to 2.7 V 2.1 Vto0.0 V1, 2, 3 -50.0 AOutput short-circuitcurrentI OS6 /AOn port, V OUT = 0.0 V 5.25 V 1, 2, 3 -30.0 -170.0 mASee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without l

48、icense from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96815DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test andMIL -STD -883test method 1 /Symbol Test conditions 2 /-55 C T C +125 C+4.75 V V CC +5.25 VV CC Group AsubgroupsLimits 3 / Unitunless otherwise specified Min MaxQuiescent supplycurrentI CC For all inputs,V IN = V CC or GNDAIn port to Bnport5.25 V 1, 2, 3 40.0 mA3005 I OUT = 0.0