DLA SMD-5962-96756 REV B-2007 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA HIGH SPEED CURRENT FEEDBACK AMPLIFIER WITH OFFSET ADJUST MONOLITHIC SILICON《极可调整电流反馈放大器硅单片电路线型微电路》.pdf

《DLA SMD-5962-96756 REV B-2007 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA HIGH SPEED CURRENT FEEDBACK AMPLIFIER WITH OFFSET ADJUST MONOLITHIC SILICON《极可调整电流反馈放大器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96756 REV B-2007 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA HIGH SPEED CURRENT FEEDBACK AMPLIFIER WITH OFFSET ADJUST MONOLITHIC SILICON《极可调整电流反馈放大器硅单片电路线型微电路》.pdf（17页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to the descriptive designator under 1.2.4. Change ratings values under 1.3. Editorial changes throughout. - lgt 99-08-06 R. MONNIN B Add low dose rate footnote to 1.5 and Table I. Delete Neutron and Latch-up parameters under 1.5. Del

2、ete Accelerated aging test, Neutron testing, and Dose rate induced latchup testing paragraphs under 4.4.4. - ro 07-04-24 R. HEBER REV SHET REV B B SHET 15 16 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY C

3、ENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-01-31 MICROCIRCUIT, LINEAR, RADIAT

4、ION HARDENED, ULTRA HIGH SPEED, CURRENT FEEDBACK AMPLIFIER WITH OFFSET ADJUST, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-96756 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E321-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

5、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96756 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space

6、 application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 59

7、62 F 96756 01 V P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified

8、 RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the c

9、ircuit function as follows: Device type Generic number Circuit function 01 HS1120RH Radiation hardened dielectric isolated (D.I.), ultra high speed current feedback amplifier with offset adjust 1.2.3 Device class designator. The device class designator is a single letter identifying the product assu

10、rance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlin

11、e(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A

12、for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96756 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings.

13、1/ Voltage between +VSand -VS. 12 V dc Differential input voltage 5 V dc Voltage at either input terminal +VSand -VSOutput current (50% duty cycle) 55 mA Maximum package power dissipation (PD) at TA= +125C 0.44 W 2/ Junction temperature (TJ) +175C Storage temperature range (TSTG) . -65C to +150C Lea

14、d temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) 30C/W Thermal resistance, junction-to-ambient (JA) . 115C/W 1.4 Recommended operating conditions. Operating supply voltage (VS) . 5 V Load resistance (RL) 50 Ambient operating temperature range (TA) . -55C to +125C

15、 1.5 Radiation features. Maximum total dose available (dose rate = 50-300 rads (Si)/s) 300 Krads (Si) 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. U

16、nless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuit

17、s. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or

18、http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and aff

19、ect reliability. 2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly. The derating is based on JAat the following rate of 8.7 mW/C. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radi

20、ation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96756 DEFENSE SUPPLY

21、CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes appl

22、icable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Managemen

23、t (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction,

24、 and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Te

25、rminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Test circuits and waveforms. The test circuit and waveforms shall be as specified on figure 2. 3.2.4 Irradiation exposure circuit. The radiation exposure circuit shall be as specified on figure 3. 3.3 Electrical pe

26、rformance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requir

27、ements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where ma

28、rking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-3

29、8535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MI

30、L-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be r

31、equired from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device cla

32、sses Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, app

33、endix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this

34、 drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the review

35、er. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

36、DRAWING SIZE A 5962-96756 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions 1/ -55C TA +125C VS= 5 V unless otherwise specified Device type Group A subgroups Min Max U

37、nit 1 -6 6 VCM= 0 V 01 2, 3 -10 10 Input offset voltage VIOM, D, P, L, R, F 2/ 3/ 01 1 -10 10 mV 1 40 VCM= 2 V, +VS= 3 V, -VS= -7 V, +VS= 7 V, -VS= -3 V 01 2, 3 38 Common mode rejection ratio CMRR M, D, P, L, R, F 2/ 3/ 01 1 38 dB 1 45 VS= 1.25 V, +VS= 6.25 V, -VS= -5 V, +VS= 3.75 V, -VS= -5 V 01 2,

38、 3 42 PSRRP M, D, P, L, R, F 2/ 3/ 01 1 42 dB 1 45 VS= 1.25 V, +VS= 5 V, -VS= -6.25 V, +VS= 5 V, -VS= -3.75 V 01 2, 3 42 Power supply rejection ratio PSRRN M, D, P, L, R, F 2/ 3/ 01 1 42 1 -40 40 VCM= 0 V 01 2, 3 -65 65 Non-inverting input (+IN) current IBSPM, D, P, L, R, F 2/ 3/ 01 1 -65 65 A 1 40

39、VCM= 2 V, +VS= 3 V, -VS= -7 V, +VS= 7 V, -VS= -3 V 01 2, 3 50 +IN current common mode sensitivity CMSIBPM, D, P, L, R, F 2/ 3/ 01 1 50 A/V 1 25 +IN resistance +RIN4/ 01 2, 3 20 k 1 -50 50 VCM= 0 V 01 2, 3 -75 75 Inverting input (-IN) current IBSNM, D, P, L, R, F 2/ 3/ 01 1 -75 75 A VCM= 0 V 01 1, 2,

40、 3 100 1000-IN current adjust 5/ range ADJIBNM, D, P, L, R, F 2/ 3/ 01 1 100 1000A See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96756 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

41、OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C VS= 5 V Device type Group A subgroups Limits Unit unless otherwise specified Min Max 1 7 VCM= 2 V, +VS= 3 V, -VS= -7 V, +VS= 7 V, -VS= -

42、3 V, 01 2, 3 10 -IN current common mode sensitivity CMSIBNM, D, P, L, R, F 2/ 3/ 01 1 10 A/V -IN current power supply sensitivity PPSSIBN01 1 15 A/V VS= 1.25 V, +VS= 6.25 V, -VS= -5 V, +VS= 3.75 V, -VS= -5 V 2, 3 27 M, D, P, L, R, F 2/ 3/ 01 1 27 NPSSIBNVS= 1.25 V, +VS= 5 V, -VS= -6.25 V, 01 1 15 +V

43、S= 5 V, -VS= -3.75 V 2, 3 27 M, D, P, L, R, F 2/ 3/ 01 1 27 Output voltage swing VOP100VIN= -3.5 V, AV= -1, RL= 100 01 1 3 V VIN= -3 V, AV= -1, RL= 100 2, 3 2.5 VIN= -3 V, AV= -1, 2/ 3/ RL= 100 , M, D, P,L, R, F 01 1 2.5 VON100VIN= +3.5 V, AV= -1, RL= 100 01 1 -3 VIN= +3 V, AV= -1 RL= 100 2, 3 -2.5

44、VIN= +3 V, AV= -1, 2/ 3/ RL= 100 , M, D, P, L, R, F 01 1 -2.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96756 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVI

45、SION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C VS= 5 V Device type Group A subgroups Limits Unit unless otherwise specified Min Max Output voltage swing VOP50VIN= -3 V, AV= -1, RL= 50 01 1, 2 2.5 V VIN=

46、-2.25 V, AV= -1, RL= 50 3 1.5 VIN= -2.25 V, AV= -1, 2/ 3/ RL= 50 , M, D, P, L, R, F 01 1 1.5 VON50VIN= +3 V, AV= -1, RL= 50 01 1, 2 -2.5 VIN= +2.25 V, AV= -1, RL= 50 3 -1.5 VIN= +2.25 V, AV= -1, 2/ 3/ RL= 50 , M, D, P, L, R, F 01 1 -1.5 Output current +IOUT6/ 01 1, 2 50 mA 3 30 -IOUT6/ 1, 2 -50 3 -3

47、0 Quiescent power supply current ICCRL= 100 01 1 14 26 mA 2, 3 33 M, D, P, L, R, F 2/ 3/ 01 1 33 IEERL= 100 01 1 -14 -26 2, 3 -33 M, D, P, L, R, F 2/ 3/ 01 1 -33 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

48、MICROCIRCUIT DRAWING SIZE A 5962-96756 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C VS= 5 V Device type Group A subgroups Limits Unit unless otherwise specified Min Max -3 dB bandwidth BW(-1) AV= -1, VOUT= 200 mVP-P, 7/ RF= 430 01 4 300 MHz BW(+1) AV= +1, VOUT= 200 mVP-P, 7/ RF= 510 4 550 BW(+2) AV= +2, VOUT=