DLA SMD-5962-96648 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DECADE COUNTER DIVIDER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体十进制计数器或驱动器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96648 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DECADE COUNTER DIVIDER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体十进制计数器或驱动器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96648 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DECADE COUNTER DIVIDER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体十进制计数器或驱动器硅单片电路数字微电路》.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、SMD-5962-96648 REV B 9999996 CIAL7744 421 = NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. 1. DATE (WMMOD) 97-08-08 ublic reporting burden for this collection is estimated to average 2 hours per response, induding the time for reviewing istruction

2、s, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the ollection of information. Send comments regarding this burden eslmate or any other aspect of this collection of information, iduding suggestions for reducing this burden, to Department of

3、Defense, Washinglion Headquarters Services, Directorate for iformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Adington, VA 2222-432, and to the office of hanagement and Budgel, Papeiwork Reduction Project (07060188), Washinglon, DC 20503.PLEASE D NOT RETURN OUR COMPLETED F

4、ORM TO EITHER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENT CSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURiNG ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS :ORM. 1. TYPED NAME (Fist, MtWe Inilia4 Last) 1. ORIGINATOR Defense Supply Center Columbus 3990 East Broad Street Columbus, OH 432

5、16-5000 67268 7. CAGE CODE I b. ADDRESS (Stmet CiOUNTEWDIVIDER, MONOLiTHK; SILICON 5. CAGE CODE I 67268 10. REVISION LETER a. CURRENT A b. NEW B Form Approved OMB No. 07044 188 a (xone) 2. PROCURING ACTIVITY NO. X (1) Existing document supplemented by the NOR may be used in manufacture. (2) Revised

6、dowment must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and furnish revised document. 3. DODAAC b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT 6. NOR NO. 596243428-97 c. TYPED NAME (first, MMdie InW Lasr) 8. DOCUME

7、NT NO. 5962-96648 11. ECP NO. d. TITLE Chief, Custom Microelectronics 1%. ACTIVITY ACCOMPLISHING REVISION DSCC-VA No users listed. e. SIGNATURE RAYMOND MONNIN b. REVISION COMPLETED (Signature) RONALD COUCH 13. DESCRIPTION OF REVISION Sheet 1 : Revisions itr column; add B. Revisions descripiion colum

8、n; add Changes in accordance with NOR 5962-R428-97. Revisions date column; add 97W. Revision level block; add B Rev status of sheets; for sheets 19 change fmm A to B“. Rev status of sheets; for sheels 20 change from A to “. Sheet 19: NOR 5962-R197-97 sheet 7 of Appendix A for Die Physical Dimensions

9、 for Die Thickness change from “21 +/-1 mils“ to 20 +/1 mils“ Sheet 20: NOR 592-R197-97 sheet 8 of Appendix A for Interface Materials for Glassivation Type change from Phosphotws doped CIW to Revision Level Bock: change from “A“ to 8 “PSG and for Assembly Related Information for Substrate Potential

10、change from Tied to VSS“ to Floating or Tied to VDD “ Revision Level Black: change from “A“ to 8“ 12. THIS SECTION FOR GOVERNMENT USE ONLY f. DATE SIGNED (YYMMDD) 97-08-08 c. DATE SIGNED (YYMMDD) 97-0-08 DD Form i 695, APR 92 Prevkws edfihns am obsokote. Provided by IHSNot for ResaleNo reproduction

11、or networking permitted without license from IHS-,-,-SMD-59b2-9bb48 REV A = 999999b 0093923 246 II DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER COLUMBUS 9 * 3990 EAST BROAD STREET COLUMBUS, OH 43216-5000 IN REPLY REFER TO DSCC-VAC(Mr. Saffle/(DSN)850-0540/614-692-0540) MAR 28 I997 SUBJECT: Notice

12、of Revision (NOR) 5962-R197-97 for Standard Microcircuit Drawing (SMD) 5962-96648 Military/Industry Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100, SMD holders should, as a minimum, handwrite those changes described in the NOR to

13、 sheet 1 of the subject SMD. After completion, the NOR should be attached to the subject SMD for future reference. Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DSCC a certificate of c

14、ompliance. This is evidenced by an existing active current certificate of compliance on file at DSCC with a DSCC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DSCC is otherwise notified. The vendor, Harris Semico

15、nductor (34371) is added to the subject SMD as a supplier for die part number 5962R9664801V9A. The next update of MIL-HDBK-103 will reflect this information. If you have comments or questions, please contact Charles Saffle at (DSN)850-0540/(614)692-0540. 1 Encl. MONICA L. POELKING - Chief, Custom Mi

16、croelectronics Team Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96648 REV A 9999996 0093924 182 D Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing instructions, se

17、arching existing data sources, gatherin and maintaining the data needed, and com letin and reviewin the collection of information. Send comments reQar#nQ this burden estimate or anv other asDecf of #is collection 09 NOTICE OF REVISION (NOR) 2. PROCURING ACTIVITY NO. Form Approved OMB NO. 0704-0788 b

18、. ADDRESS (Street, Ci-= 0.0 v or vDD VDD = 5 v Vo = 2.5 V VIN = 0.0 V or VDD JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 7 TABLE I. Eiectrical Derformance characteri

19、stics - Continued. symbo 1 -55C 5 TC 5 +125“C Device unless otheruise specified High level output current (source) OH VDD = 15 V Vo = 13.5 V VIN = 0.0 V or Voo o1 Output voltage, high OH VDD = 10 V, no load 1/ VDD = 15 V, no load 3/ I Output voltage, Lou VOL VDD 5 V, no load 1/ -1: VDD = 10 V, no lo

20、ad I/ VDD = 15 V, no load VOH 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL 4.5 V, vOL 0.5 v Input leakage current, 1 ou IIL Input leakage current, high IH N threshold voltage V N threshold voltage, delta AV P threshold voltage V P threshold voltage, delta A“TPD See footnotes at end of table. STANDARD MICROCIRC

21、UIT DRAWING 5962-96648 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-96648 9999996 0082253 811 10, 11 743 9 99 91/ 9 10, Il 743 240 ns 160 600 ns 81 O STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 SIZE A

22、REVISION LEVEL TABLE I. Electrical wrformance characteristics - Continued. Condi ti ons unless otherwise specified -55C 5 TC 5 +125“C Test VDD = 2.8 V, VIN = VDD or GND VDD = 20 V, VIN = VDD or GND VDD = 18 V, VIN = VDD or GND M, D, L, R 1/ VDD = 3.0 V, VIN = VDD or GND Functional tests input capaci

23、tance Any input, See 4.4.1 Propagation delay 4/ clock to carry out VDD = 5 V, VIN = Voo or GND M, D, L, R 2/ VDD 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND VDD = 5 V, VIN = VDD or GND Propagation delay 4/ clock to decode out M, D, L, R 2/ VDD = 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD o

24、r GND VDD = 5 V, VIN VDD or GND Propagation delay &i reset to carry out PLH3 o1 - o1 - o1 - 9 I I 550 I ns VDD = 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND VDD = 5 V, VIN = VDD or GND tPHL4, tPLH4 Propagation delay k/ reset to decode out Transition time v 9 I I 810 I M, D, L. R 2/ VDD = 10

25、V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND VDD = 5 V, VIN VDD or GND 91/ I I 250 I ns 99 I I 180 I 9 I I ZOO I ns 10, 11 +I VDD = 10 V, VIN = VDD or GND 91/ I 50 VDD = 15 V, VIN VDD or GND See footnotes at end of table. I 5962-96648 SHEET 8 Provided by IHSNot for ResaleNo reproduction or netwo

26、rking permitted without license from IHS-,-,-Test Group A subgroups 9 IO, 11 91/ 91/ 9u 9u Maximum clock input 4J frequency Limits Unit Min Max 2.5 MHz 1.85 5.5 8 120 ns 1 O0 Minim reset pulse 4J width Minimum reset removal time w Minimum clock pulse 4/ width TABLE I. Electrical mrformance character

27、istics - Continued. Condi ti ons unless otherwise specified -55C 5 TC 5 +125“C FCL vDD = 5 V, VIN = VDD or GND I VDD = 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND VDD = 5 V, VIN = VDD or GND VDD = 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND VDD = 5 V, VIN = VDD or GND Voo = 10 V, VIN

28、 = Voo or GND Voo = 15 V, VIN = VDD or GND VDD = 5 V, VIN = VDD or GND VDD = 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND Devi ce type o1 - o1 - o1 o1 - 1 I 9u 91/ 10 9 1/ 1 1 ,/“- 91/ 91/ I/ These tests are controlled via design or process and are not directly tested. on initial design relea

29、se and upon design changes which affect these characteristics. These parameters are characterized 2/ Devices supplied to this drawing will meet all levels M, D, L, R of irradiation. However, this device is only tested at the RI level. For accuracy, voltage is measured differentially to VDD. Capacita

30、nce load (CL) = 50 pF, resistance load (RL) = 200 kn, input rise and fall times (tR, tF) 20 ns. When performing post irradiation electrical measurements for any RHA level, TA = +25“C. 3/ 4/ Limit is 0.050 V Max. 4.4.1 GrOUD A inswction. a. b. Tests shall be as specified in table IIA herein. For devi

31、ce class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. Q and V, subgroups 7 and 8 shall include verifying the functionality of the device. Subgroup 4 (CIN measurement) shall be measured only for the initial qualification and after process or design changes which may affec

32、t capacitance. frequency of Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted. For device classes c. C shall be measured between the designated terminal and GND at a 1 MHz. Tests shall be sufiicient to validate the limits defined in table I herein. d. 4.4.2 GrOUD C inswction.

33、 The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, 5, C or D. The test circuit shall be maintained by the manufacturer u

34、nder document revision level control and shall be made available to the preparing or acquiring activity upon request. circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005. The test b. TA = +125“C, minimum

35、. c. Test duration: 1.000 hours, except as permitted by method 1005 of MIL-STD-883. I SIZE I I 5962-96648 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted

36、 without license from IHS-,-,-SMD-5962-96648 9999996 0082255 694 W Device type Case out 1 i nec Terminal nunber 1 2 3 4 5 6 7 9 10 11 12 13 14 15 16 a o1 E and X Terminal symbol Clock Clock inhibit Ripple blanking in Ripple blanking out Carry out f 9 d a e b Lamp test Reset “sc C “OD FIGURE 1. Termi

37、nal connections. DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-7bb48 9979996 0082256 520 = Test requirements Subgroups Subgroups (in accordance with MIL-STD-883, TM table III) (in accordance with MIL-1-38535, 5005, ta

38、ble I) I Device class M I Device class Q I Device clas71 Group D end-point electrical Group E end-point electrical parameters (see 4.4) parameters (see 4.4) I Interim electrical parameters I (see 4.2) 1,7,9 1,7,9 1.7,9 1.7.9 1,7,9 1,7,9 I Final electrical parameters I (see 4.2) Output current (sink)

39、 VoD = 5.0 V I I/ I I/ I 2/3/ 1,2,3,7,8,9,10,11 1,2,3,7,8,9,10,11 1,2,3,7,8,9,10,11 IOL 20% I 1,2,3,4,7,8,9,10,11 1,2,3,4,7,8,9,10,11 I (see 4.4) I I Group A test requirements 1 1,2,3,7,8,9,10,11 1,2,3,7,8,9,10,11 I I 3/ Group C end-point electrical 1,2,3,7,8,9,10,11 I parameters (see 4.4) I Table I

40、IB. Burn-in and owratins life test Delta parameters (+25OCL I Parameter I Delta Limits I 1.0 pl I DD Supply current I 220% I I OH I Output current (source) I V, = 5.0 V, V, = 4.6 V 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test te

41、mperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. manufacturers TRB, in accordance with MIL-1-38535, and shall be made available to the acquiring or preparing activity upon request. accordance with the intent specified in te

42、st method 1005. The test circuit shall be maintained under document revision level control by the device The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in 4.4.3 GrouD D insDection. The group D inspection end-point electrical parameters shall be as s

43、pecified in table Group E inspection is required only for parts intended to be marked as radiation IIA herein. 4.4.4 Grow E insmction. hardness assured (see 3.5 herein). End-point electrical parameters shall be as specified in table IIA herein. STD-883 method 1019 and as specified herein. RHA levels

44、 for device classes M, P and V shall be as specified in MIL-1-38535. 4.4.4.1 Total dose irradiation testinq. Total dose irradiation testing shall be performed in accordance with MIL- Accelerated aging tests shall be performed on all devices requiring a RHA level 4.4.4.1.1 Accelerated aqinq test. gre

45、ater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at +25T 5C. performed at initial qualification and after any design or process changes which may affect the RHA r

46、esponse of the device. Testing shall be I SIZE I I 5962-96648 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96648

47、 M 9997976 0082257 467 M 4.4.4.2 Dose rate induced tatchuD testinq. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC, or approved test structures at technology qu

48、alification and after any design or process changes which may effect the RHA capability of the process. 4.4.4.3 Dose rate uDset testinq. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL-STD-883 and herein (see 1.4 herein). a. Transient dose rate upset testing sha

49、ll be performed at initial qualification and after any design or process changes which may effect the RHA performance of the devices. Test 10 devices with O defects unless otherwise specified. Transient dose rate upset testing for class CI and V devices shall be performed as specified by a TRB approved radiation hardness assura