DLA SMD-5962-96632 REV C-2003 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD TRUE COMPLEMENT BUFFER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重互补缓冲器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96632 REV C-2003 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD TRUE COMPLEMENT BUFFER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重互补缓冲器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96632 REV C-2003 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD TRUE COMPLEMENT BUFFER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重互补缓冲器硅单片电路数字微电路》.pdf（21页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R218-97. 97-04-04 Monica L. Poelking B Changes in accordance with NOR 5962-R422-97. 97-08-08 Raymond Monnin C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes t

2、hroughout. LTG 03-07-02 Thomas M. Hess REV SHET REV C C C C C C SHEET 15 16 17 18 19 20 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick C. Officer STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLU

3、MBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-07 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD TRUE/COMPLEMENT BUFFER, MONOLITHIC SILICO

4、N AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96632 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E407-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

5、ICROCIRCUIT DRAWING SIZE A 5962-96632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (d

6、evice class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96632 01

7、V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels an

8、d are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit functio

9、n as follows: Device type Generic number Circuit function 01 4041UB Radiation hardened CMOS, quad true/complement buffer 02 4041UBN Radiation hardened CMOS, quad true/complement buffer with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifyi

10、ng the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-3853

11、5 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line package X CDFP3-F14 14 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device

12、classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FO

13、RM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltage range .-0.5 V dc to VDD+ 0.5 V dc DC input current, any one input . 10 mA Device dissipation per output transistor .100 mW Storage temperature range (TSTG)-65C to +150C Lead temperatu

14、re (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case C 24C/W Case X 30C/W Thermal resistance, junction-to-ambient JA): Case C 74C/W Case X 116C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case C 0.68 W Case X 0.43 W 1.4 Recommended o

15、perating conditions. Supply voltage range (VDD) 3.0 V dc to +18 V dc Case operating temperature range (TC). -55C to +125C Input voltage (VIN) 0 V to VDDOutput voltage (VOUT). 0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold,

16、no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 5 x 108 Rads(Si)/s 5/ Dose rate latch-up 2 x 108Rads(Si)/s 5/ Dose rate survivability 5 x 1011Rads(Si)/s 5/ Neutron irradiated 1 x 1014neutrons/cm26/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards,

17、 and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and su

18、pplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade

19、 performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds packag

20、e dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case C. 13.5 mW/C Case X. 8.6 mW/C 5/ Guaranteed by design or process but not tested. 6/ Device type 02 only. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

21、thout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Elect

22、ronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Orde

23、r Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and re

24、gulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The m

25、odification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirement

26、s for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1

27、 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance c

28、haracteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The el

29、ectrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packa

30、ges where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance wi

31、th MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as re

32、quired in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.6 Certifica

33、te of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order t

34、o be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-

35、PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lo

36、t of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verificati

37、on and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit gr

38、oup assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-9663

39、2 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1, 3 1/ 1.0 VDD= 5 V VIN= 0.0

40、V or VDDAll 2 1/ 30 1, 3 1/ 2.0 VDD= 10 V VIN= 0.0 V or VDDAll 2 1/ 60 1, 3 1/ 2.0 VDD= 15 V VIN= 0.0 V or VDDAll 2 1/ 120 1 2.0 VDD= 20 V, VIN= 0.0 V or VDDAll 2 200 M, D, P, L, R 2/ All 1 7.5 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDDAll 3 2.0 A 1 1.6 2 1/ 1.2 VDD= 5 V VO= 0.4 V VIN= 0.0 V or

41、VDDAll 3 1/ 2.1 1 5.0 2 1/ 3.5 VDD= 10 V VO= 0.5 V VIN= 0.0 V or VDDAll 3 1/ 6.25 1 19 2 1/ 13 Low level output current (sink) IOLVDD= 15 V VO= 1.5 V VIN= 0.0 V or VDDAll 3 1/ 24 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

42、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96632 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device

43、type Group A subgroups Min Max Units 1 -1.6 2 1/ -1.2 VDD= 5 V VO= 4.6 V VIN= 0.0 V or VDDAll 3 1/ -2.1 1 -6.4 2 1/ -4.6 VDD= 5 V VO= 2.5 V VIN= 0.0 V or VDDAll 3 1/ -8.4 1 -5.0 2 1/ -3.5 VDD= 10 V VO= 9.5 V VIN= 0.0 V or VDDAll 3 1/ -6.25 1 -19 2 1/ -13 High level output current (source) IOHVDD= 15

44、 V VO= 13.5 V VIN= 0.0 V or VDDAll 3 1/ -24 mA VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 Output voltage, high VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 V VDD= 5 V, no load 1/ 1, 2, 3 0.05 VDD= 10 V, no load 1/ 1, 2, 3 0.05 Output voltage, low VOLVDD= 15 V, no load All 1,

45、2, 3 0.05 V VDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96632 DEFENSE SUPPLY CEN

46、TER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 9 120 VDD= 5.0 V, VIN= VDDor GND 10, 11

47、162 M, D, P, L, R 2/ 9 162 VDD= 10 V, VIN= VDDor GND 9 1/ 70 Propagation delay time, input to output 4/ tPHL, tPLHVDD= 15 V, VIN= VDDor GND All 9 1/ 50 ns 9 80 VDD= 5.0 V, VIN= VDDor GND 10, 11 108 VDD= 10 V, VIN= VDDor GND 9 1/ 40 Transition time 4/ tTHL, tTLHVDD= 15 V, VIN= VDDor GND All 9 1/ 30 n

48、s 1/ These tests are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which affect these characteristics. 2/ Devices supplied to this drawing will meet all levels M, D, P, L, R of irradiation. However, this device is only tested at the R level. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ For accuracy, voltage is measured differentially to VDD. Limit is 0.050 V Max. 4/ Load capacitance (CL) = 50