DLA SMD-5962-96627 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD AND OR SELECT GATE MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重与非门硅单片电路数字微电路》.pdf

《DLA SMD-5962-96627 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD AND OR SELECT GATE MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重与非门硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96627 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD AND OR SELECT GATE MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重与非门硅单片电路数字微电路》.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-07-29Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngtion Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURNYOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENTISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THISFORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center Columbus5. CAGE CODE672686

5、. NOR NO.5962-R401-97a. TYPED NAME (First, Middle Initial,Last)3990 East Broad StreetColumbus, OH 43216-50007. CAGE CODE672688. DOCUMENT NO.5962-966279. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD AND/ORSELECT GATE, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No users

6、listed.a. CURRENTAb. NEWB12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “B“.Revisions description column; add “Changes in accordance with NOR 5962-R401-97“.Revisions date column; add “97-07-29“.Revision level block; add “B“.Rev

7、 status of sheets; for sheets 20 change from “A“ to “B”.Rev status of sheets; for sheets 21 change from “A“ to “B”.Sheet 20: NOR 5962-R217-97 sheet 7 of Appendix A for Die Physical Dimensions for Die Thickness change from “21 +/-1 mils” to “20 +/1 mils”Revision Level Block: change from “A” to “B”She

8、et 21: NOR 5962-R217-97 sheet 8 of Appendix A for Interface Materials for Glassivation Type change from “Phosphorous doped SIO2” to “PSG “ and for Assembly Related Information for Substrate Potential change from “ Tied to VSS” to “Floating or Tied to VDD “Revision Level Block: change from “A” to “B”

9、12. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b

10、. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENTDSCC-VAc. TYPED NAME (First, Middle Initial, Last)d. TITLEChief, Custom Microelectronicse. SIGNATURERAYMOND MONNINf. DATE SIGNED(YYMMDD)97-07-2915a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VAb. REVISION COMPLETED (Signature)RONALD COUCHc. DATE SIGNED

11、(YYMMDD)97-07-29DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-04-04Form Approved

12、OMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comment

13、s regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, V

14、A 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER

15、LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad StreetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R217-97a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUM

16、ENT NO.5962-966279. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No users listed.a. CURRENT b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr

17、column; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R217-97“.Revisions date column; add “97-04-04“.Revision level block; add “A“.Rev status of sheets; add sheets “15 through 21”, for sheet 1, 4, and 15 through 21, add “A“. Sheet block; change “14” to “21”.Sheet 4:

18、Add new paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “A“.Sheets 15 through 21: Add attached appendix A.CONTINUED ON NEXT SHEET14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing docu

19、ment supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC-VACc. TYPED

20、 NAME (First, Middle Initial, Last)MONICA L. POELKINGd. TITLECHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)97-04-0415a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VACb. REVISION COMPLETED (Signature)BERNARD J. MIESSEc. DATE SIGNED(YYMMDD)97-04-04DD Form 1695, APR 92

21、 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96627REVISION LEVELASHEET15DESC FORM 193AJUL 94Document No: 5962-96627Revisi

22、on: AAPPENDIX A NOR No: 5962-R217-97APPENDIX A FORMS A PART OF SMD 5962-96627 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting the requirements of MI

23、L-PRF-38535 and themanufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules,or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assuranceclasses consisting of military high reliabil

24、ity (device class Q) and space application (device Class V) are reflected in the Part orIdentification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in thePIN.10.2 PIN. The PIN shall be as shown in the following example:5962 R 96627 01 V 9 AFederal

25、 RHA Device Device Die DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3)Drawing Number 10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels.A dash (-) indicates a non

26、-RHA die.10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 4019B Radiation Hardened, CMOS, quadAND/OR select gates.02 4019BN Radiation Hardened, CMOS, quadAND/OR select gates, neutron irradiated die.Provided by IHSN

27、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96627REVISION LEVELASHEET16DESC FORM 193AJUL 94Document No: 5962-96627Revision: AAPPENDIX A NOR No: 5962-R217-97APPENDIX A F

28、ORMS A PART OF SMD 5962-96627 Sheet: 3 of 8 10.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.10.2.4 Die Details. The die details designation shall be a unique letter which designates the dies

29、physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for eachproduct and variant supplied to this appendix.10.2.4.1 Die Physical dimensions.Die Types Figure number01, 02 A-110.2.4.2 Die Bonding pad locations and

30、Electrical functions.Die Types Figure number01, 02 A-110.2.4.3 Interface Materials.Die Types Figure number01, 02 A-110.2.4.4 Assembly related information.01, 02 A-110.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operating conditions. See

31、paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the followingspecifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defe

32、nse Index ofSpecifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OH

33、IO 43216-5000SIZEA5962-96627REVISION LEVELASHEET17DESC FORM 193AJUL 94Document No: 5962-96627Revision: AAPPENDIX A NOR No: 5962-R217-97APPENDIX A FORMS A PART OF SMD 5962-96627 Sheet: 4 of 8 SPECIFICATIONMILITARYMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSM

34、IL-STD-883 - Test Methods and Procedures for Microelectronics.HANDBOOKMILITARYMIL-HDBK-103 - List of Standardized Military Drawings (SMDs).(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specificacquisition functions should be obtained fro

35、m the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, thetext of this drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements. The individual item requ

36、irements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not effect the form, fit or function as described herein.30.2 Design, construction and ph

37、ysical dimensions. The design, construction and physical dimensions shall be asspecified in MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bo

38、nding pad locations and electrical functions. The die bonding pad locations and electrical functions shall beas specified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related informat

39、ion. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Truth table(s). The truth table(s) shall be as defined within paragraph 3.2.3 of the body of this document.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S

40、TANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96627REVISION LEVELASHEET18DESC FORM 193AJUL 94Document No: 5962-96627Revision: AAPPENDIX A NOR No: 5962-R217-97APPENDIX A FORMS A PART OF SMD 5962-96627 Sheet: 5 of 8 30.2.6 Radiation exposure circuit. The

41、radiation exposure circuit shall be as defined within paragraph 3.2.4 of the body ofthis document.30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are

42、as specified in table I of the body of thisdocument.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testingsufficient to make the packaged die capable of meeting the electrical performance requirements in table I.30.5 Marking. As a minimum

43、, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to acustomer, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PINlisted in 10.2 herein. The certification mark shall be a “QML” or “Q” as required by

44、 MIL-PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing

45、as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirementsherein.30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF

46、-38535shall be provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be inaccordance with MIL-PRF-38535 or as modified in the device manufacturers Qua

47、lity Management (QM) plan. Themodifications in the QM plan shall not effect the form, fit or function as described herein.40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined inthe manufacturers QM plan. As a minimum it shall consist of:a. W

48、afer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b. 100% wafer probe (see paragraph 30.4).c. 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or thealternate procedures allowed within MIL-STD-883 TM5004.40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified