DLA SMD-5962-96621 REV E-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS NAND GATES MONOLITHIC SILICON《抗辐射互补金属氧化物半导体与非硅单片电路数字微电路》.pdf

《DLA SMD-5962-96621 REV E-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS NAND GATES MONOLITHIC SILICON《抗辐射互补金属氧化物半导体与非硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96621 REV E-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS NAND GATES MONOLITHIC SILICON《抗辐射互补金属氧化物半导体与非硅单片电路数字微电路》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R184-97. CFS 97-02-24 Monica L. Poelking B Changes in accordance with NOR 5962-R396-97. - RLC 97-07-29 Raymond L. Monnin C Add device class T criteria. Editorial changes throughout. JAK 98-12-07 Monica L. Poelk

2、ing D Correct the total dose rate and update RHA levels. - LTG 99-04-28 Monica L. Poelking E Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 05-09-07 Thomas M. Hess REV SHET REV E E E E E E E E E E E SHEET 15 16 17 18 19 20 21 22 23 24 25 REV STATUS REV E C D E E

3、E E D C C E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVE

4、D BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-27 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, NAND GATES, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-96621 SHEET 1 OF 25 DSCC FORM 2233 APR 97 5962-E487-05 Provided by IH

5、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assuran

6、ce class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Wh

7、en available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. Th

8、e PIN is as shown in the following example: 5962 R 96621 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T, and V R

9、HA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2

10、 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4011B Radiation hardened, CMOS, quad 2-input NAND gate 02 4012B Radiation hardened, CMOS, dual 4-input NAND gate 03 4023B Radiation hardened, CMOS, triple 3-input NAND gate 04

11、 4011BN Radiation hardened, CMOS, quad 2-input NAND gate with neutron irradiated die 05 4012BN Radiation hardened, CMOS, dual 4-input NAND gate with neutron irradiated die 06 4023BN Radiation hardened, CMOS, triple 3-input NAND gate with neutron irradiated die 1.2.3 Device class designator. The devi

12、ce class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V C

13、ertification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter D

14、escriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-399

15、0 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T, and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc DC input voltag

16、e range (VIN) -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input (IIN). 10 mA Device dissipation per output transistor . 100 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline C . 24C/W C

17、ase outline X 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C . 74C/W Case outline X 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C . 0.68 W Case outline X 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply volt

18、age range (VDD) +3.0 V dc to +18 V dc Case operating temperature range (TC). -55C to +125C Input voltage range (VIN) +0.0 V to VDDOutput voltage range (VOUT). +0.0 V to VDD1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rad (Si)/s) 1 x 105Rads (Si) Single event phenomenon (S

19、EP) effective linear energy threshold (LET), no upsets (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 5 x 108Rads (Si)/s 5/ Dose rate latch-up 2 x 108Rads(Si)/s 5/ Dose rate survivability 5 x 1011Rads (Si)/s 5/ Neutron irradiated (device types 04, 05, and 06) . 1 x 1014neutrons/cm25/

20、 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall app

21、ly over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline C. 13.5 mW/C Case outline X . 8

22、.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 223

23、4 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or

24、contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE H

25、ANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, B

26、uilding 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific e

27、xemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T, and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM pla

28、n shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.

29、2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordanc

30、e with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Irradiation test connections. The irradiation test connections shall be as specified in table III. Provided by IH

31、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation p

32、arameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be

33、the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible

34、 due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in ac

35、cordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T, and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of

36、 compliance. For device classes Q, T, and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to

37、 be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T, and V, the requirements of M

38、IL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with

39、each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and

40、review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group ass

41、ignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96621 DEFEN

42、SE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Supply current IDDVDD= 20 V, VIN=

43、 VDDor GND All 1 0.5 A 2 50.0 M, D, P, L, R 2/ 1 2.5 VDD= 18 V, VIN= VDDor GND 3 0.5 DD= 5 V, VIN= VDDor GND 1/ 1, 3 0.25 2 7.5 VDD= 10 V, VIN= VDDor GND 1/ 1, 3 0.5 2 15.0 VDD= 15 V, VIN= VDDor GND 1/ 1, 3 0.5 2 30.0 Input leakage IILVDD= 20 V, VIN= VDDor GND All 1 -100 nA current low 2 -1000 VDD=

44、18 V, VIN= VDDor GND 3 -100 Input leakage IIHVDD= 20 V, VIN= VDDor GND 1 100 current high 2 1000 VDD= 18 V, VIN= VDDor GND 3 100 Output voltage VOLVDD= 15 V, no load All 1, 2, 3 50.0 mV low VDD= 5 V, no load 1/ 50.0 DD= 10 V, no load 1 50.0 Output voltage VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 V

45、 high VDD= 5 V, no load 1/ 4.95 DD= 10 V, no load 1 9.95 Low level output IOLVDD= 5 V All 1 0.53 mA current (sink) VO= 0.4 V 2 1/ 0.36 3 1/ 0.64 VDD= 10 V All 1 1.4 O= 0.5 V 2 1/ 0.9 3 1/ 1.6 VDD= 15 V All 1 3.5 O= 1.5 V 2 1/ 2.4 3 1/ 4.2 See footnotes at end of table. Provided by IHSNot for ResaleN

46、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test co

47、nditions -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max High level output IOHVDD= 5 V All 1 -0.53 mA current (source) VO= 4.6 V 2 1/ -0.36 3 1/ -0.64 DD= 5 V All 1 -1.8 VO= 2.5 V 2 1/ -1.15 3 1/ -2.0 DD= 10 V All 1 -1.4 VO= 9.5 V 2 1/ -0.9 3 1/ -1.6 DD= 15

48、 V All 1 -3.5 VO= 13.5 V 2 1/ -2.4 3 1/ -4.2 Low level input voltage VILVDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVOL V VDD= 20 V, VIN= VDDor GND 7 VDD/2 VDD/2 DD= 18 V, VIN= VDDor GND All 8A M, D, P, L, R 2/ 7 VDD= 3.0 V, VIN= VDDor GND All 8B M, D, P, L, R 2/ 7 Inp

49、ut capacitance CINAny input, see 4.4.1c 1/ All 4 7.5 pFtPHL, VDD= 5 V, VIN= VDDor GND 9 250 ns tPLH4/ 10, 11 338 Propagation delay time, any input to output M, D, P, L, R 2/ 9 338 VDD= 10 V 1/ 4/ 120 VDD= 15 V 1/ 4 9 90 Transition time tTHL, VDD= 5 V, VIN= VDDor GND All 9 200 tTLH4/ 10, 11 270 VDD= 10 V