DLA SMD-5962-96620 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HEX BUFFER CONVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体六角缓冲器或转换器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96620 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HEX BUFFER CONVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体六角缓冲器或转换器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96620 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HEX BUFFER CONVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体六角缓冲器或转换器硅单片电路数字微电路》.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BECOW HAS BEEN AUTHORIZED FOR THE DOCUMENT USTED. 1 1. DATE (YYMMDD) 97-07-29 Ulk reporting burden for lhls cdlecilon ie eathaled lo average 2 hours per responsa, induding the Ume for reviewing nstnidions, searching existing data sources, gathering an

2、d maintaining Uw data needed, and completing and reviewing the dledion of information. Send comments regarding his burden eslimale or any other aspect of this coilection of information, nduding suggestions for mdudng this burden, io Department af Defense, Washingtion Headquarters Services, Directora

3、te for nformation Operations and Repom, 1215 Jeffenson Davis Highway, Suite 1204, AiUnglon, VA mo2-4302, and to the office of 4anegemeni and Budget, Paperwork Reduction Projed (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN OUR COMPLETrD FORM TO EiTHER OF THESE ADDRESSES. RiURN COMPLETED FORM

4、 TO THE GOVERNMENT =ORM. SSUING CONTRACTINO OFFICER FOR THE CONTRACT/ mocuRiw AcTIviTy NUMBER USTED IN ITEM 2 OF THIS 1. TYPED NAME (FiMt MMe Ifdtkl, hSt) t. ORIGINATOR Defense Supply Center Cdumbus 3990 East Broad street Cdumbus, OH 432165000 67268 7. CAGE CODE I b. ADDRESS (Slmet Ci add W. Revieio

5、ns descriplion column; add Changes in accordance with NOR 5962-i3SW. Revisions dale cdumn; add 37-07-29. Revision level Mod 75 MEV (cm2/nig) 5/ i 5 x 10 Rads(Si)/s 5/ 2 x 10 Rads(Si)/s I/ 5 x 10l Rads(Si)/s 5/ 2.1 -nt SDCC if ication. standa rds. un- and handbook . Uniecs otherwise specified, the fo

6、llouing specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATIN RI L ITARY MIL-1-38535 - Integrated Ci

7、rcuits, Manufacturing, General Specification for. STANDARDS MI LI TARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. - 1/ Stresses above the absolute maximum rating may cause permanent damage to the

8、device. maxim levels may degrade performance and affect reliability. u Unless otherwise specified, all voltages are referenced to Vss. 3./ The limits for the parameters specified herein shall apply over the full specified Vcc range and case temperature range of -55C to +125C unless otherwise noted.

9、; VIN 0.0 V or VDD -5v VIN = 0.0 V or VDD WDD = 5 v o = 2.5 V VIN = 0.0 V or VDD VDD = 10 V Vo = 9.5 v dIN = 0.0 V or VDD JUL 94 Licensed by Information Handling ServicesSMD-5962-96620 W 9999996 0083718 119 = 1 zu 31/ 1, 2, 3 1, 2, 3 ,lec,rical Derformance chraciaristica - Continued. TABLE I. F L. l

10、est -1.5 mA -1.1 -1.65 4.95 V 9.95 VDD = 5 V, no load 1/ VDD = 10 V, no load 1/ VDD = 15 V, no load u vDD = 5 Y, no load r/ vDD = 10 V, no load r/ vDD = 15 V, no load VDD = 5 v VOH 1.5 V, VOL 0.5 V VDD = 10 v vOH 9.0 V, VOL c 1.0 V U VDD = 15 V VOH 13.5 V, VOL VDD = 5 v vOH 4.5 V, VOL 1.5 V 0.5 V I

11、Al l Al L Al l All 1, 2, 3 1, 2, 3 1, 2, 3 1, 2. 3 1, 2, 3 14.95 0.05 0.05 0.05 1.0 v vss = 0.0 v, IDD = 10 /AA M, D, L. R U ALL Al 1 Vss = 0.0 V, IDO = 10 KA M, D, L, R M Al 1 Conditions I sylbo 1 Group A Limits Unit subgroups -55C 5 TC 5 +125“C vcc .= VDD unless otheruise specified High level outp

12、ut current (source) OH Ai i Output voltage, high OH 01 Output voltage, Lou Input voltage IL I H VDD = 10 v VoH 9.0 V, VOL 1.0 V 1/ 2 f 13.5 V, VOL 1.5 V Input leakage current, Lou IIL Input leakage current, high IIH N threshold voltage NTH N threshold voltage, deita VDD = 10 V, I -10 /LA, M, D, L, R

13、 as P threshold voltage “PTH “PTH - P threshold vol tage, deita See footnotes at end of table. 5962-96620 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Licensed by Information Handling Services SMD-5962-96620 = 9999996 0

14、083739 055 W SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 5962-96620 SHEET 8 TABLE I. Eiectrical sr formance characteristics - Continued. - Devici type Test Conditions -55C 5 TC 5 +125“C Vcc VDD unless otheruise specified Croup A I Limits I

15、 Unit Functional tests Al 1 VDD = 2.8 V, VIN = VDD or GND VDD 20 V, VIN = VDD or GND VDD = 18 V, VIN = VDD or GND Al 1 8A I AL 1 Al 1 Al l Al 1 Al l - - - - - Al 1 - Voo = 3.0 V, VIN = VDD or GND M, D, L, R U Any input, See 4.4.1 VDD = 5 V, VIN = VDD or GND Input capacitance IN t Propagation delay 4

16、/ time, high to low M, D, L, R u VDD = 10 v, v vIN = vDD or $ED VDD = 15 Y, V vIN = vDD or Eh ?i vDD or EID VDD = 15 V, V vI, = vDD or $ND = 5 v = 5 V 10 v, v = 10 v = 15 V Propagation delay time, Lou to high t VDD = 5 V, VIN = VDD or CND M, D. L. R U =lOV,V =5v = 5 V 2: = vDD or EED VDD = 15 V, V v

17、IN = vDD or EID VDD = 15 V, VgD= 15 V VIN = VDD or Voo = 5 Y, VIN = Voo or GND AL 1 - Transition time, high to low Voo = 10 V, VIN = VDD or GND UDD 15 V, VIN = VDD or GND See footnotes at end of table. Licensed by Information Handling ServicesSMD-5962-96620 = 9999996 0083720 877 = Group A subgroups

18、9 10, 11 99 91/ Test Limits Unit Min Max 350 ns 473 150 110 Transition time, 4/ low to high STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TABLE I. Electrical w rformance c haracter istics - Continued. SIZE A 5962-96620 REVISION LEVEL SHEET 9 LH Condi ti ons -55C

19、5 Tr 5 +125“C Vcc .=-VDD unless otherwise specified VDD = 5 V, VIN = VDD or GND lVDD 10 V, VIN = VDD o: GND VDD = 15 V, VIN = VDD or GND I Device type AL I These tests are controlled via design or process and are not directly tested. on initial design release and upon design changes which affect the

20、se characteristics. 21 Dei3ces supplied to this drawing will meet all levels M, D, L, R of irradiation. tested at the RI Level. For accuracy, voltage is measured differentially to VDD. Load capacitance (CL) 50 pF, load resistance (RL) = 200 kQ, input rise and fall times (tR, tF) 20 ns. These paramet

21、ers are characterized However, this device is only Uhen performing post irradiation electrical measurements for any RHA level, TA = +25C. 2/ 4/ Limit is 0.050 V Max. 4.4.1 GcpyD A ins- a. b. Tests shall be as specified in table IIA hereiri. For device class M, subgroups 7 and 8 tests shall be suffic

22、ient to verify the truth table. O and V, subgroups 7 and 8 shall include verifying the functionality of the device. Subgroup 4 (GIN measurement) shal! be measured only for the initial qualification and after process or design changes which may affect capacitance. frequency of 1 MHz. 4.4.2 GrouD C bw

23、ct ioQ. For device classes c. C shall be measured between the designated terminal and GND at a Tests shall be suflicient to validate the limits defined in table i herein. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4 7 1 amimal cr iteria for de

24、vice class H. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall te maintained by the manufacturer under docunent revision level control and shall be mede available to the preparing or acquiring activity upon request. test circuit s

25、hall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005. The b. TA = +125C, minim. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional c riteria for device classes Q a

26、nd I . lhe steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturerls QM plan in accordance dith MIL-1-38535. nanufacturerls TRB, in accordance with MIL-1-38535, and shall be mede available to the acquiring or pre

27、paring activity Jpon request- ccordance with the intent specified in test method 1005. lhe test circuit shall be maintained under document revision level control by the device The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in 4.4.3 Grow D iwt i on .

28、 The group D inspection end-point electrical parameters shall be as specified in table IA herein. Licensed by Information Handling ServicesSMD-5962-96620 = 9999996 0083721 703 FIGURE 1. Terminal connectiorS. STANDARD MICROCIRCUIT DRAWING IA I I 5962-96620 REVISION LEVEL SHEET DEFENSE ELECTRONICS SUP

29、PLY CENTER DAYTON, OHIO 45444 10 I DESC FORM 193A JUL 94 Licensed by Information Handling ServicesTABLE IIA. Electrical f,mre!ne nts. Test requirements I nt er im e i ect r i ca l parameters Final electrical parameters (see 4.2) (see 4.2) Subgroups (in accordance with MIL-STO-883, TM 5005, table I)

30、Device class M 1,7,9 1,2,3,7,8,9,10,11 1/ Subgroups (in accordance with MIL-1-38535, table III) Group D end-point electrical Group E end-point electrical parameters (see 4.4) parameters (see 4.4) 1,2,3,7,8,9,10,11 1,2,3,7,8,9,10,11 1/ I as 1,7,9 1,7,9 1,7,9 1,7,9 1,7,9 1.7,9 I 1,2,3,4,7,8,9,10,11 1,

31、2,3,4,7,8,9,10,11 1,2,3,4,7,8,9,10,11 I (see 4.4) I I I Group A test requirements I Parameter Supply current Output current (sink) VDD = 5.0 v Output current (source) VDD = 5.0 V, VwT = 4.6 V I 1,2,3,7,8,9,10,11 1,2,3,7,8,9,10,11 I parameters (see 4.4) I I I 3 Group C end-point electrical 1,2,3,7,8,

32、9,10,11 Symbol Delta Limits OD t0.2 /LA IOL t20X OH t2OX 4.4.4 Sirow F in swctior. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-1-38535. End-point electrical p

33、arameters shall be as specified in table IIA herein. 4.4.4.1 Jota1 dose irradiatio n testiw. Total dose irradiation testing shall be performed in accordance with MIL- Accelerated aging tests shall be performed on all devices requiring a RHA level CTD-883 method 1019 and as specified herein. greater

34、than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I lerein and shall be the pre-irradiation end-point electrical parameter limit at *25*C t5.C. xrformed at initial qualification and after any design or process changes uhich may affect the RHA resp

35、onse of the device. 4.4.4.1.1 Accelerated as ins test. Testing shall be 4.4.4.2 Dose rate induced tat- test inq. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC,

36、 or approved test structures at technology qualification and after any design or process changes uhich may effect the RHA capability of the process. 5962-96620 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Licensed by In

37、formation Handling ServicesSMD-5962-96620 %99994b 0083723 586 4.4.4.3 pose rate UDS testi np. Dose rate upset testing shall be performed in accordance uith test method 1021 of MIL-STD-883 and herein (see 1.4 herein). a. Transient dose rate upset testing shall be performed at initial qualification an

38、d after any design or process changes uhich may effect the RHA performance of the devices. Test 10 devices uith O defects unless otherwise spec i f i ed . Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation hardness assurance pian a

39、nd MIL-1-38535. b. 4.4.4.4 Sinale event Dhe nomena (SEPL . SEP testing shall be required on class V devices (see 1.4 herein). testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as awroved by the qualifying activity at initial qua

40、lification and after any design or process changes which may affect the upset or latchup characteristics. SEP lhe recumnended test conditions for SEP are as folious: a. The ion beam angle of incidence shall be betueen normal to the die surface and 60 to the normal, inclusive (i.e. o“ 5 angle L 60“).

41、 No shadouing of the ion beam due to fixturing or package related effects is alloued. The fluence shall be z 100 errors or r lo6 ions/cm2. lhe flux shall be betueen lo2 and lo5 ions/cm2/s. lhe cross-section shall be verified to be flux independent by measuring the cross-section at tu0 flux rates uhi

42、ch differ by at least an order of magnitude. The particle range shall be a 20 microns in silicon. The test temperature shall be +25“C and the maxim rated operating temperature t1O“C. Bias conditions shall be defined by the manufacturer for latchup measurements. b. c. d. e. f. g. Test four devices ui

43、th zero failures. Table III. Irradiation t est connections. 1/ 2, 4, 6, 10, 12, 13, 15 I Open Ground VDD = 10 V 10.5 V I 8 1, 3, 5, 7, 9, 11, 14, 16 STAN DARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SIZE A 5962-96620 REVISION LEVEL SHEET 12 Licensed by Information H

44、andling ServicesSUD-5762-96620 R 9997996 0083724 412 R 6.3 Rgcord of useu . Military and industrial users shell inform Defense Electronics Supply Center when a system application requires configuration control and uhich SMDIS are applicable to that system. of users and this list uill be used for coo

45、rdination and distribution of changes to the drauings. Users of drauings covering microelectronic devices (FSC 5962) should contact DESC-EC, telephone (513) 296-6047. DESC uill maintain a record 6.: -. Conments on this drawing should be directed to DESC-EC, Dayton, Ohio 45444-5270, or telephone (513

46、) 296-5377. 6.5 Ubreviations. svmbois. and definitions . The abbreviations, symbols, and definitions used herein are defined in MIL-1-38535 and MIL-STD-1331. 6.6 pne Dart - one Dart numbe r svstem . The one part - one part number system described below has been developed to allow for transitions bet

47、ween identical generic devices covered by the three major microcircuit requirements documents (MIL-H-38534, MIL-1-36535, and 1.2.1 of MIL-STD-883) uithout the necessity for the generation of unique PINS. The three military requirements docunents represent different class levels, and previously when

48、a device manufacturer upgraded military product from one class levet to another, the benefits of the upgraded product uere unavailable to the Original Equipment Manufacturer (OEM), that was contractually locked into the original unique PIN. establishing a one part number system covering all three do

49、cuments, the OEM can acquire to the highest class level available for a given generic device to meet system needs without modifying the original contract parts selection criteria. By Mi 1 i tarv dociimentat ion formt Exarrple PIN Manufacturing Document under new svs tem source listinq J ist i nq Neu MIL-H-38534 Standard Microcircuit 5962-XXXXXZZ(H or K)YY PML-38534 Drawings Neu MIL-1-38535 Standard Microcircuit 5962-XXXXXZZ(P or V)YY QML -38535 D raui ngs MIL-BUL-103 MIL-BUL-103 Neu 1.2.1 of MIL-SID-883 Standard 5962