DLA SMD-5962-96618 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL COMPLEMENTARY PAIR PLUS INVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重互补加法变极器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96618 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL COMPLEMENTARY PAIR PLUS INVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重互补加法变极器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96618 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL COMPLEMENTARY PAIR PLUS INVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重互补加法变极器硅单片电路数字微电路》.pdf（26页珍藏版）》请在麦多课文档分享上搜索。

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-07-29Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngtion Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURNYOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENTISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THISFORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center Columbus5. CAGE CODE672686

5、. NOR NO.5962-R393-97a. TYPED NAME (First, Middle Initial,Last)3990 East Broad StreetColumbus, OH 43216-50007. CAGE CODE672688. DOCUMENT NO.5962-966189. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, DUALCOMPLEMENTARY PAIR PLUS INVERTER, MONOLITHIC SILICON10. REVISION LETTER11. EC

6、P NO.No users listed.a. CURRENTAb. NEWB12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “B“.Revisions description column; add “Changes in accordance with NOR 5962-R393-97“.Revisions date column; add “97-07-29“.Revision level bloc

7、k; add “B“.Rev status of sheets; for sheets 21 change from “A“ to “B”.Rev status of sheets; for sheets 22 change from “A“ to “B”.Sheet 21: NOR 5962-R214-97 sheet 7 of Appendix A for Die Physical Dimensions for Die Thickness change from “21 +/-1 mils” to “20 +/1 mils”Revision Level Block: change from

8、 “A” to “B”Sheet 22: NOR 5962-R214-97 sheet 8 of Appendix A for Interface Materials for Glassivation Type change from “Phosphorous doped SIO2” to “PSG “ and for Assembly Related Information for Substrate Potential change from “ Tied to VSS” to “Floating or Tied to VDD “Revision Level Block: change f

9、rom “A” to “B”14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revi

10、sed document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENTDSCC-VAc. TYPED NAME (First, Middle Initial, Last)d. TITLEChief, Custom Microelectronicse. SIGNATURERAYMOND MONNINf. DATE SIGNED(YYMMDD)97-07-2915a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VAb. REVISION COMPLETED (Signature)RONALD COUCH

11、c. DATE SIGNED(YYMMDD)97-07-29DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-04-0

12、4Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information

13、. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204

14、, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING A

15、CTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad StreetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R214-97a. TYPED NAME (First, Middle Initial,Last)7. CAGE COD

16、E672688. DOCUMENT NO.5962-966189. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, DUALCOMPLEMENTARY PAIR PLUS INVERTER, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No users listed.a. CURRENT b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVI

17、SIONSheet 1: Revisions ltr column; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R214-97“.Revisions date column; add “97-04-04“.Revision level block; add “A“.Rev status of sheets; add sheets “16 through 22”, for sheet 1, 4, and 16 through 22, add “A“. Sheet block; ch

18、ange “15” to “22”.Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “A“.Sheets 16 through 22: Add attached appendix A.CONTINUED ON NEXT SHEET14. THIS SECTION FOR GOVERNMENT USE ONLYa.

19、 (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FO

20、RGOVERNMENTDSCC-VACc. TYPED NAME (First, Middle Initial, Last)MONICA L. POELKINGd. TITLECHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)97-04-0415a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VACb. REVISION COMPLETED (Signature)BERNARD J. MIESSEc. DATE SIGNED(YYMMDD)9

21、7-04-04DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96618REVISION LEVELASHEET16DESC FORM 193AJUL 94Do

22、cument No: 5962-96618Revision: AAPPENDIX A NOR No: 5962-R214-97APPENDIX A FORMS A PART OF SMD 5962-96618 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the QualifiedManufacturers List (QML) Program. QML microcircuit die mee

23、ting the requirements of MIL-PRF-38535 and themanufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules,or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assuranceclasses consistin

24、g of military high reliability (device class Q) and space application (device Class V) are reflected in the Part orIdentification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in thePIN.10.2 PIN. The PIN shall be as shown in the following example:5

25、962 R 96618 01 V 9 A GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 GB5 Federal RHA Device Device Die DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) / (see 10.2.3)/Drawing Number 10.2.1 RHA designator. Device classes

26、 Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die.10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 4007UB Radiation Hardened, CMOS, dual complementary

27、 pair plus inverter.10.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAW

28、INGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96618REVISION LEVELASHEET17DESC FORM 193AJUL 94Document No: 5962-96618Revision: AAPPENDIX A NOR No: 5962-R214-97APPENDIX A FORMS A PART OF SMD 5962-96618 Sheet: 3 of 8 10.2.4 Die Details. The die details designation shall be a uniq

29、ue letter which designates the dies physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for eachproduct and variant supplied to this appendix.10.2.4.1 Die Physical dimensions.Die Type Figure number01 A-110.2.4.2

30、 Die Bonding pad locations and Electrical functions.Die Type Figure number01 A-110.2.4.3 Interface Materials.Die Type Figure number01 A-110.2.4.4 Assembly related information.01 A-110.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operating

31、 conditions. See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the followingspecifications, standards, bulletin, and handbook of the issue listed in that issue of the D

32、epartment of Defense Index ofSpecifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.SPECIFICATIONMILITARYMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.Provided by IHSNot for ResaleNo reproduction or netwo

33、rking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96618REVISION LEVELASHEET18DESC FORM 193AJUL 94Document No: 5962-96618Revision: AAPPENDIX A NOR No: 5962-R214-97APPENDIX A FORMS A PART OF SMD 5962-96618 Sheet:

34、4 of 8 STANDARDSMIL-STD-883 - Test Methods and Procedures for Microelectronics.HANDBOOKMILITARYMIL-HDBK-103 - List of Standardized Military Drawings (SMDs).(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specificacquisition functions shoul

35、d be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, thetext of this drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements. The ind

36、ividual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not effect the form, fit or function as described herein.30.2 Design, co

37、nstruction and physical dimensions. The design, construction and physical dimensions shall be asspecified in MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure

38、A-1.30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall beas specified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly

39、 related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4 of the body ofthis document.30.3 Electrical performance characteristics and post-irradi

40、ation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of thisdocument.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and paramet

41、ric testingsufficient to make the packaged die capable of meeting the electrical performance requirements in table I.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000S

42、IZEA5962-96618REVISION LEVELASHEET19DESC FORM 193AJUL 94Document No: 5962-96618Revision: AAPPENDIX A NOR No: 5962-R214-97APPENDIX A FORMS A PART OF SMD 5962-96618 Sheet: 5 of 8 30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to acustom

43、er, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PINlisted in 10.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of com

44、pliance shall be required from aQML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meet

45、s, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirementsherein.30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535shall be provided with each lot of microcircuit die delivered to this drawing.40. QUALITY A

46、SSURANCE PROVISIONS40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be inaccordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. Themodifications in the QM plan shall not effect the form, fit or func

47、tion as described herein.40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a. Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b.

48、100% wafer probe (see paragraph 30.4).c. 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or thealternate procedures allowed within MIL-STD-883 TM5004.40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as