DLA SMD-5962-96612 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS BINARY RATE MULTIPLIER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体二元比率乘数硅单片电路数字微电路》.pdf

《DLA SMD-5962-96612 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS BINARY RATE MULTIPLIER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体二元比率乘数硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96612 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS BINARY RATE MULTIPLIER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体二元比率乘数硅单片电路数字微电路》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、SMD-59b2-9bbL2 REV B 99999b 0117290 8T7 (xonel (YYMMDD) 97-07-25 NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DCUMENT USTED. X (1) Wng document supplemented by the NOR may be used in manufadure. (2) Revised document must be mcdved before manufacturer may incorpo

2、rale this change. (3) Custodian of master doaiment shall make above revision and furnish revised document. ubk reporting burden for this cdlection is estimated lo average 2 hours per response, indud the Ume for reviewing add B. Revisions descripiion column; add Changes in accordance with NOR 5962-i3

3、88-97. Revieions dab cdumn; add 97-07-25. Revision level bled 5 x 10 Rads(Si)/s 5/ Dose rate latch-up 2 x lo8 Rads(Si)/s 5/ Dose rate survivability 5 x lo1 Rads(Si)/s 2 linear energy threshold, no upsets or latchup (see 4.4.4.4) . i5 MEV/p2/mg) 5/ 2. APPLICABLE DOCUMENTS 2.1 Eovermnt swcificat ion.

4、standards. bullet in. and handboo k. Unless otheruise specified, the following specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the exten

5、t specified herein. SPECiFICATION Mi LITARY MIL-1-38535 - integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MiL-STD-93 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. 1/ a u Stresse

6、s above the absolute maxim rating may cause permanent damage to the device. maxim levels may degrade performance and affect reliability. Unless otherwise specified, all voltages are referenced to Vss. The limits for the parameters specified herein shall apply over the full specified Vcc range and ca

7、se temperature range of -55C to +125“C unless otheruise noted. If device power exceeds package dissipation capabiiity, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Extended operation at the Case E . 13.7 N/“C CaseX . 8.8nM/“C Guaranteed by design or pr

8、ocess but not tested. 5962-9661 2 REVISION LEVEL SHEET STAN DARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-BULLETIN SIZE A STANDARD MICROCIRCUIT DRAWIN

9、G DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 5962-9661 2 REVISION LEVEL SHEET 4 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9bb32 m 9999976 0083553 b77 m 3.9 yerification and review for device clu . For devic

10、e class M, DESC, DESCls agent, and the acquiring activity Offshore docunentation retain the option to review the manufacturers facility and applicable required docunentation. shall be made available onshore at the option of the reviewer. M. 3.10 Microcircuit srow asSigmient for de vice class Device

11、class M devices covered by this drawing shall be in microcircuit group nunber 40 (see MIL-1-38535, appendix A)- 4. PUALITY ASSURANCE PROVISIONS 4.1 Saml ins and inswct ion. For device class M, sampling and inspection procedures shall be in accordance with MIL-STD-883 (see 3.1 herein). For device cla

12、sses P and V, sampling and inspection procedures shall be in accordance uith MIL-1-38535 or as modified in the device manufacturers quality management (PM) plan. plan shall not affect form, fit, or function as described herein. The modification in the PM 4.2 Screenins . For device class M, screening

13、 shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device classes and V, screening shall be in accordance with MIL-1-38535, and shall be conducted on all devices prior to qualification and technology conformance

14、 inspection. iteria for de vice class M. 4.2.1 &tional cr a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, 6, C, or D. The test circuit shall be maintained by the manufacturer under docunent revision level control and shall be made available to the preparing or acquiring activity u

15、pon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance uith the intent specified in test method 1015. (2) TA +125“C, minim. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 mitional

16、cr iteria fo r device classes P and v. a. lhe burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers PM plan in accordance with MIL-1-38535. lhe burn-in test circuit shali be maintained under docunent revision level cont

17、rol of the device manufacturers Technology Review Board (TRB) in accordance with MIL-1-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the inten

18、t specified in test method 1015. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class P shall be as specified in appendix 6 of MIL-1-38535 or as modified in the device manufacture

19、rs quality management (PM) plan. 4.3 ualification mwct ion for device classes Q and v. Pualification inspection for device classes P and V shall Inspections to be performed shall be those specified in MIL-1-38535 and herein for be in accordance uith MIL-1-38535. groups A, 6, C, D, ad E inspections (

20、see 4.4.1 through 4.4.4). 4.3.1 Electrostatic discha rse sensitivity (ESDS) au alification insoect ion. ESDS testing shall be performed in accordance with MIL-CTD-883, method 3015. process or design changes which may affect ESDS classification. ESDS testing shall be measured onLy for initial qualifi

21、cation and after 4.4 unformance inswction . Quality conformance inspection for device class M shall be in accordance uith MIL-STD-883 (see 3.1 herein) and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups

22、A, 6, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for classes P and V shall be in accordance with MIL-1-38535 or as specified in the OM plan including groups A, 8, C, D, and E inspections and as specified herein except where option 2 of MIL-1-38535 permits al

23、ternate in-line control testing. I SIZE I I 5962-9661 2 REVISION LEVEL SHEET STAN DARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96612 m 99

24、99996 0081554 503 m STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TABLE I. Electrical wrformance characteristics. SIZE 5962-9661 2 A REVISION LEVEL SHEET 6 Conditions unless otherwise specified -55C 2 Tc 5 +125”C VDD = 20 V, VIN = VDD or GND VD = 18 V, VIN = VDD

25、or GND VDD = 5 V, VIN = VDD or GND I/ VDD 10 V, VIN = VDD or GND 1/ VDD = 15 V, VIN = VDD or GND 1/ VDD = 20 V, VIN = VDD or GND VDD = 18 V, VIN = Voo or GND UDD = 20 V, VIN = VDD or GND VDD = 18 V, VIN VDD or GND U, = 15 V, no Load II, = 5 V, no Load IJ tDD 10 V, no Load 1/ LIDD = 15 V, no load 3 J

26、DD = 5 V, no load 1/ IiDD = 10 V, no load 1/ JDD = 10 v JO = 0.5 V I 3 1/ 4.2 1 JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9bbI12 b 0083555 44T REVISION LEVEL DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 Test SHEET 7 High Le

27、vel output current (source) Input voltage N threshold voltage N threshold voltage, delta P threshold voltage P threshold voltage, delta TABLE I. Etectrical w rformance characteristics - Continued. OH IL 11 H NTH T H IPTH 3V Conditions unless otherwise specified -55C 5 T-c 5 +125”C VDD = 5 v VwT = 4.

28、6 V VDD = 5 v VWT = 2.5 V VDD 10 v VWT = 9.5 v VDo = 15 V VWT = 13.5 V voo = 5 v VDD = 10 v voH 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL 20 microns in silicon. e. f. g. Test four devices with zero failures. The test temperature shall be +25“C and the maxim rated operating temperature t1O“C. Bias conditions

29、 shall be defined by the manufacturer for Latchup measurements. STAN DARD MICROCIRCUIT DRAWING I 5962-96612 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Ground Open 1,5,6,7 8 4.5 i . Methods of inspection shall be as specified as follows: VDD = 10

30、 V 10.5 V 2,3,4,9,10,11,12,13,14,15,16 4.5.1 yoltaae and cur rent. Unless otherwise specified, all voltages given are referenced to the microcircu terminal. Currents given are conventional current and positive uhen flowing into the referenced terminal. 5. PACKAGING 5.1 mkaaina reauirementp . lhe req

31、uirements for packaging shall be in accordance with MIL-STD-883 (see 3. herein) for device class M and MIL-1-38535 for device classes CI and V. 6. NOTES SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 t GND 5962-9661 2 REVISION LEVEL SHEET 14 6.1 Intended use .

32、 Microcircuits conforming to this drawing are intended for use for Goverrunent microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Rpglaceab ility. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepar

33、ed specification or drawing. 6.1.2 . Device class P devices will replace device class M devices. 6.2 Confiauration control of SMD Is. All proposed changes to existing SMDIS will be coordinated with the users of This coordination will be accwnplished in accordance with MIL-STD-973 using DD record for

34、 the individual docunents. Form 1692, Engineering Change Proposal. 6.3 Record o f usprs . Military and industrial users shall inform Defense Electronics Supply Center uhen a system application requires configuration control and which SMDIS are applicable to that system. of users and this list will b

35、e used for coordination and distribution of changes to the drawings. covering microelectronic devices (FSC 5962) should contact DESC-EC, telephone (513) 296-6047. DESC will maintain a record Users of drawings 6.4 omnen&. Cmnts on this drawing should be directed to DESC-EC, Dayton, Ohio 45444-5270, o

36、r telephone (513) 296-5377. 6.5 &breviations. svmbols. and de finitions. The abbreviations, symbols, and definitions used herein are defined in MIL-1-38535 and MIL-STD-1331. I I I DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

37、 SMD-5962-96612 = 9999996 0081563 516 6.6 . The one part - one part number system described below has been developed to allow for transitions between identical generic devices covered by the three major microcircuit requirements docunents (MIL-H-38534, MIL-1-38535, and 1.2.1 of MIL-STD-883) without

38、the necessity for the generation of unique PINS. The three military requirements docunents represent different class levels, and previously uhen a device manufacturer upgraded military product from one class level to another, the benefits of the upgraded product were unavailable to the Original Equi

39、pnent Manufacturer (OEM), that was contractually locked into the original unique PIN. establishing a one part nunber system covering all three docunents, the OEM can acquire to the highest class level available for a given generic device to meet system needs uithout modifying the original contract p

40、arts selection cri ter i a. By tation form Example PIN ynder neu svstm Manufacturing Docunent source listing 1 i st i ng Neu MIL-H-38534 Standard Microcircuit 5962-XXXXXZZ(H or K)YY QML -38534 Drawings Neu MIL-1-38535 Standard Microcircuit 5962-XXXXXZZ(P or V)YY ML -38535 Drawings MIL-BUL-103 MIL-BU

41、L-103 5962-XXXXXZZ(M)YY MIL-BUL-103 MIL-BUL-103 Neu 1.2.1 of MIL-STD-883 Standard Microcircuit Drawings 6.7 Sources o f sypply. 6.7.1 Sources of sucoiv for device classes P and V. Sources of supply for device classes 0 and V are listed in PML-38535. have agreed to this drawing. The vendors listed in

42、 PML-38535 have subnitted a certificate of compliance (see 3.6 herein) to DESC-EC and 6.7.2 mo ved sou rces of sumlv for de vice class M. Approved sources of supply for class M are listed in MIL-BUL-103. herein) has been submitted to and accepted by DECC-EC. lhe vendors listed in MIL-BUL-103 have ag

43、reed to this drawing and a certificate of compliance (see 3.6 6.8 BgQitional information. A copy of the foilouing additional data shall be maintained and available from the device manufacturer: a. RHA upset levels. b. Test conditions (SEP). c. Nunber of upsets (SEP). d. Nunber of transients (SEP). e

44、. Occurrence of latchup (SEP). 1 SIZE I I 5962-9661 2 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 OESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-76612 = b 00815

45、64 Y52 STANDARD MICROCIRCUIT DRAWING SWRCE APPROVAL BULLETIN DATE: 95-11-08 Approved sources of supply for SMD 5962-96612 are listed belou for imnediate acquisition only and shall be added to MIL-BUL-103 and PUL-38535 during the next revision. or deletion of sources. submitted to and accepted by DES

46、C-EC. 38535. MIL-BUL-103 and PML-38535 will be revised to include the addition The vendors listed belou have agreed to this drawing and a certificate of conpliance has been This bulletin is superseded by the next dated revision of MIL-BUL-103 and PML- Standard Vendor Vendor simi lar 5962R9661 20I1.E

47、C 1 5962R9661201WC I 34371 I CD4089BKMSR - U Caution. Do not use this nunber for item acquisition. may not satisfy the performance requirements of this drawing. Items acquired to this nunber Vendor CAGE nunber 34371 Vendor name end address Harris Semiconductor P.O. Box 883 Melbourne, FL 32902-0883 lhe information contained herein is disseminated for convenience only and the Goverwnt assumes no liability uharsoever for any inaccuracies in this I information bulletin. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-