DLA SMD-5962-96610 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 8-INPUT NAND AND GATE MONOLITHIC SILICON《抗辐射互补金属氧化物半导体8输入与非与门硅单片电路数字微电路》.pdf

《DLA SMD-5962-96610 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 8-INPUT NAND AND GATE MONOLITHIC SILICON《抗辐射互补金属氧化物半导体8输入与非与门硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96610 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 8-INPUT NAND AND GATE MONOLITHIC SILICON《抗辐射互补金属氧化物半导体8输入与非与门硅单片电路数字微电路》.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、1. DATE (YYMMDD) NOTICE OF REVISION (NOR) 97-07-25 THIS REVISION DESCRIBED BELOW HAS BEEN AUMORIZED FOR THE DOCUMENT USTED. i. TYPED NAME (Fht MWe Initrtel, Last) I Defense Supply Center Columbus 3990 East Broad Street Columbus, OH 432165000 Jubk reporting burden for mis cdm is dmaied io averaga 2 h

2、wrs per response, indudihg the time for reviewing nstnidions, searching existing data soum, gathering and maintaining the data needed, and completing and reviewing the xtldlection of informalion. send oommenb regarding this burden estimate or any other asped of ihs cdlecbon of information, ndudng su

3、ggestions for redudng this buden, io Depattment of efmse, Washingtion Headquaitem Servias, Diredoraie for nformabn Operatkuis and Reports, 1215 Jefferson Davis Highway, Suite 1204, Ariington, VA mo2-4302. and io the Office of Lnagemeni and Budget, Papew add W. Revisions descripon column; a add 37-07

4、-25. Revision level bled5 x 10 Rads(Si)/s u Dose rate latch-up 2 x IO8 Rads(Si)/s Dose rate survivability Neutron irradiated types (device type 02) . 1 x 1014 Neutrons/cm 5/ linear energy threshold, no upsets or latchup (see 4.4.4.5) . 75 MEV6(cm2/mg) u Y 5 x lo1 Radc(Si)/s 2. APPLICABLE DOCUMENTS 2

5、.1 Government mecification. standards. bulletin. and handbook. Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of

6、 this drawing to the extent specified herein. SPECIFICATION MI LI TARY MIL-1-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit C

7、ase Outlines. - 1/ a 9 4/ Stresses above the absolute maximum rating may cause permanent damage to the device. maximum levels may degrade performance and affect reliability. Unless otherwise specified, all voltages are referenced to Vss. The limits for the parameters specified herein shall apply ove

8、r the full specified Vcc range and case temperature range of -55C to +125C unless otherwise noted. If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Extended operation at the Case C . 13.5 N/“C CaseX .

9、 8.6N/“C s/ Guaranteed by design or process but not tested. SIZE A 5962-9661 O STAN DARD MICROCIRCUIT DRAW1 NG DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 3 i DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

10、 IHS-,-,-SMD-5962-9bbLO = 9999996 0083392 578 REVISION LEVEL DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 BULLETIN MI LI TARY SHEET 4 MIL-BUL-103 - List of Standard Microcircuit Drawings (SMDs). HANDBOOK MILITARY MIL-HDBK-780 - Standardized Military Drawings. (Copies of the specification, stand

11、ards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 grder of precedence. In the event of a conflict between the text of this drawing and the referenc

12、es cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Item reauirements. The individual item requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devicecl and as s

13、pecified herein. The individual item requirements for device classes Q and V shall be in accordance with MIL-1-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. plan shall not affect the form, fit, or function as described herein. The modification

14、 in the QM 3.2 Desian. construction. and Ohv sical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-STD-883 (see 3.1 herein) for device class M and MIL-1-38535 for device classes Q and V herein. 3.2.1 Case outlines. The case outlines shall be in accordance w

15、ith 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 3.2.4 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and Dostirradiation Darameter limits.

16、 Unless otherwise specified Truth tables The truth tables shall be as specified on figure 2. herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Elect rical test reau i

17、 rwnta . The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Markinq. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance with MIL-STD-883 (see 3.1

18、 herein). In addition, the manufacturers PIN may also be marked as listed in MIL-BUL-103. Marking for device classes Q and V shall be in accordance with MIL-1-38535. 3.5.1 Certification/cmliance mark. The compliance mark for device class M shall be a “Co as required in MIL-STD-883 (see 3.1 herein).

19、The certification mark for device classes Q and V shall be a WML“ or Wi as required in MIL-1-38535. 3.6 Certificate of comoliance. For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.2 her

20、ein). classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.1 herein). The certificate of compliance suhnitted to DESC-EC prior to listing as an approved source of supply for this drawing sh

21、all affirm that the manufacturers product meets, for device class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes P and V, the requirements of MIL-1-38535 and the requirements herein. For device 3.7 Certificate of conformance. A certificate of conformance as required for d

22、evice class M in MIL-STD-883 (see 3.1 herein) or for device classes Q and V in MIL-1-38535 shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of chanae for device class M. For device class M, notification to DESC-EC of change of product (see 6.2 herein) invo

23、lving devices acquired to this drawing is required for any change as defined in MIL-STD-973. STANDARD MICROCIRCUIT DRAWING 5962-9661 O DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96610 m b 0083193 404 m STAN DARD MI

24、CROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 3.9 Verification and review for device class M. For device class M, DESC, DESCs agent, and the acquiring activity Offshore docunentation retain the option to review the manufacturers facility and applicable required docunentation.

25、shaii be made avaiabe onshore at the option of the reviewer. 3.10 Microcircuit arouD assiqw . nt for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-1-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Samlina and inswction. For d

26、evice class M, sampling and inspection procedures shall be in accordance with The modification in the QM MIL-STD-883 (see 3.1 herein). with MIL-1-38535 or as modified in the device manufacturers quality management (QM) plan. plan shall not affect form, fit, or function as described herein. For devic

27、e classes Q and V, sampling and inspection procedures shall be in accordance 4.2 Screening. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device classes Q and V, screening shall

28、 be in accordance uith MIL-1-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by

29、 the manufacturer under docunent revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2)

30、TA +125C, minim. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufactur

31、ers QM plan in accordance with MIL-1-38535. maintained under docunent revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-1-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the in

32、puts, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. Interim and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class Q shall be

33、 as specified in appendix B of MIL-1-38535 or as modified in the device manufacturers quality management (PMI plan. The burn-in test circuit shall be b. c. 4.3 Qualification insmction for device classes Q and V. Qualification inspection for device classes Q and V shall Inspections to be performed sh

34、all be those specified in MIL-1-38535 and herein for be in accordance with MIL-1-38535. groups A, B, C, D, ad E inspections (see 4.4.1 through 4.4.4). 4.3.1 Elect rostatic discharse sensitivity (ESDS) aualification insmction. ESDS testing shall be performed in accordance with MIL-STD-883, method 301

35、5. process or design changes which may affect ESDS classification. ESDS testing shall be measured only for initial qualification and after 4.4 Conformance insoection. Quality conformance inspection for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein) and as specified herein. I

36、nspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for classes Q and V shall be in accordance with MIL-1-38535 or as specified in the QM

37、plan including groups A, B, C, D, and E inspections ad as specified herein except where option 2 of MIL-1-38535 permits alternate in-line control testing. A 5962-9661 O REVISION LEVEL SHEET 5 I SIZE I I DESC FORM 193A JUi 94 Provided by IHSNot for ResaleNo reproduction or networking permitted withou

38、t license from IHS-,-,-Test - 15 V pc1.5 V Supply current 3 2/ 1.6 All 1 3.5 2 a 2.4 Low level output current (sink) vDD-=25vv vo - High level output current (source) 3a -0.64 Al l 1 -1.8 2a -1.15 TABLE I. flectrical e rformance characteristics. VDD = 10 v vo 9.5 v OH 32/ -2.0 All I -1.4 22/ -0.9 3u

39、 -2.6 Conditions JJ -55C 5 Tc-c +125“C Device Group A Limits Units 1 unless otherwise specified type subgroups Min Max voo = 5 v 2/ Al 1 1, 3 0.25 fl VIN = GND or VDD 2 7.5 A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 VDD = 10 v 2/ VIN = GND or Voo 5962-9661 O

40、 REVISION LEVEL SHEET 6 -5v -0.36 15 V 2=13.5 V I I -4.2 I SIZE I I DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96610 m 999999b 0083195 287 Device GrouD A Limits Al L Al l Al l 1, 2, 3 4.95 1, 2, 3 9.95 1, 2, 3 14.9

41、5 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 I I REVISION LEVEL I SHEET TABLE 1. Electr ical wrformance cha racteristics - Continued. Conditions 1/ unless otherwise specified -55C 5 TE 5 +125“C Unit Test 1-X subgroups Output voltage, high OH VDD = 5 V, no load 1/ V vDD = 10 V, no load 2/ vDD = 15 V, no load V,

42、 VOL 9.0 V, VOL 20 microns in silicon. e. f. 9. Test four devices with zero failures. lhe test temperature shall be +25“C and the maximum rated operating temperature 110C. Bias conditions shall be defined by the manufacturer for latchup measurements. 5962-9661 O REVISION LEVEL SHEET STANDARD MICROCI

43、RCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 I DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9bbLO m 999999b 0083200 474 Open 1,6,8,13 Ground VDD = +10 V 2 0.5 V 7 2,3,4,5,9,10,11,12,14 6.4 Comnents

44、. Comnents on this drawing should be directed to DESC-EC, Dayton, Ohio 45444-5270, or telephone (513) 296-5377. I SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 5962-9661 O SHEET 12 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reprod

45、uction or networking permitted without license from IHS-,-,-SMD-5962-9bbLO 9997996 0083203 300 SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 6.6 One part - one aart nunber svstem . The one part - one part nunber system described below has been developed to il

46、low for transitions between identical generic devices covered by the three major microcircuit requirements docunents ;MlC-H-38536, MIL-1-38535, and 1.2.1 of MIL-STD-883) without the necessity for the generation of unique PINS. The three military requirements documents represent different class level

47、s, and previously when a device manufacturer Jpgraded military product from one class level to another, the benefits of the upgraded product were unavailable to the Original Equipment Manufacturer (OEM), that was contractually locked into the original unique PIN. establishing a one part nuder system

48、 covering all three docunents, the OEM can acquire to the highest class level available for a given generic device to meet system needs without modifying the original contract parts selection :ri teria. By 5962-9661 O REVISION LEVEL SHEET 13 ilitarv documentation format Manufacturing Docunent source

49、 listing Example PIN 1 i st i nq - qew MIL-H-38534 Standard Microcircuit 5962-XXXXXZZ(H or KIYY QML-38534 Irawings Uew MIL-1-38535 Standard Microcircuit 5962-XXXXXZZ(Q or V)YY HL - 38535 Irawi ngs MIL-BUL-103 MIL-BUL-103 leu 1.2.1 of MIL-STD-883 Standard 5962-XXXXXZZ(M)YY MIL-BUL-103 MIL-BUL-103 licrocircuit Drawings 6.7 Sources of suwly. 6.7.1 JML-38535. lave agreed to this drawing. &grces of sumlv for device classes Q and