DLA SMD-5962-96607 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS LOOKAHEAD CARRY GENERATOR MONOLITHIC SILICON《抗辐射互补金属氧化物半导体发生器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96607 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS LOOKAHEAD CARRY GENERATOR MONOLITHIC SILICON《抗辐射互补金属氧化物半导体发生器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96607 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS LOOKAHEAD CARRY GENERATOR MONOLITHIC SILICON《抗辐射互补金属氧化物半导体发生器硅单片电路数字微电路》.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-07-24Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngtion Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURNYOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENTISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THISFORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center Columbus5. CAGE CODE672686

5、. NOR NO.5962-R383-97a. TYPED NAME (First, Middle Initial,Last)3990 East Broad StreetColumbus, OH 43216-50007. CAGE CODE672688. DOCUMENT NO.5962-966079. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, LOOKAHEADCARRY GENERATOR, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No user

6、s listed.a. CURRENTAb. NEWB12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “B“.Revisions description column; add “Changes in accordance with NOR 5962-R383-97“.Revisions date column; add “97-07-24“.Revision level block; add “B“.R

7、ev status of sheets; for sheets 19 change from “A“ to “B”.Rev status of sheets; for sheets 20 change from “A“ to “B”.Sheet 19: NOR 5962-R204-97 sheet 7 of Appendix A for Die Physical Dimensions for Die Thickness change from “21 +/-1 mils” to “20 +/1 mils”Revision Level Block: change from “A” to “B”S

8、heet 20: NOR 5962-R204-97 sheet 8 of Appendix A for Interface Materials for Glassivation Type change from “Phosphorous doped SIO2” to “PSG “ and for Assembly Related Information for Substrate Potential change from “ Tied to VSS” to “Floating or Tied to VDD “Revision Level Block: change from “A” to “

9、B”14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document

10、.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENTDSCC-VAc. TYPED NAME (First, Middle Initial, Last)d. TITLEChief, Custom Microelectronicse. SIGNATURERAYMOND MONNINf. DATE SIGNED(YYMMDD)97-07-2415a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VAb. REVISION COMPLETED (Signature)RONALD COUCHc. DATE SIGN

11、ED(YYMMDD)97-07-24DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-03-14Form Approv

12、edOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comme

13、nts regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington,

14、 VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBE

15、R LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad StreetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R204-97a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOC

16、UMENT NO.5962-966079. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, LOOK-AHEADCARRY GENERATOR, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No users listed.a. CURRENT b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions

17、 ltr column; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R204-97“.Revisions date column; add “97-03-14“.Revision level block; add “A“.Rev status of sheets; for sheets 1, 4, and 14 through 20, add “A“.Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die.

18、 For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “A“.Sheets 14 through 20: Add attached appendix A.CONTINUED ON NEXT SHEET14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.

19、(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC-VACc. TYPED NAME (First, Middle Initial, Last)MONICA L. POELKINGd.

20、TITLECHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)97-03-1415a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VACb. REVISION COMPLETED (Signature)TIN H. LEc. DATE SIGNED(YYMMDD)97-03-14DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo

21、reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96607REVISION LEVELASHEET14DESC FORM 193AJUL 94Document No: 5962-96607Revision: AAPPENDIX A NOR No: 5962-R204-97APPENDIX A FORMS A PART OF S

22、MD 5962-96607 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturersapproved QM plan for use in mon

23、olithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices usingchip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting ofmilitary high reliability (device class Q) and space application (device Class V) are

24、reflected in the Part or Identification Number(PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.10.2 PIN. The PIN shall be as shown in the following example:5962 R 96607 01 V 9 AFederal RHA Device Device Die DieStock class designator type class cod

25、e Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3) Drawing Number 10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s). The device type(s) shall ident

26、ify the circuit function as follows:Device type Generic number Circuit function01 40182B Radiation Hardened, CMOS,look-ahead carrygenerator.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOL

27、UMBUS, OHIO 43216-5000SIZEA5962-96607REVISION LEVELASHEET15DESC FORM 193AJUL 94Document No: 5962-96607Revision: AAPPENDIX A NOR No: 5962-R204-97APPENDIX A FORMS A PART OF SMD 5962-96607 Sheet: 3 of 8 10.2.3 Device class designator.Device class Device requirements documentationQ or V Certification an

28、d qualification to the die requirements of MIL-PRF-38535.10.2.4 Die Details. The die details designation shall be a unique letter which designates the dies physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for

29、 eachproduct and variant supplied to this appendix.10.2.4.1 Die Physical dimensions.Die Type Figure number01 A-110.2.4.2 Die Bonding pad locations and Electrical functions.Die Type Figure number01 A-110.2.4.3 Interface Materials.Die Type Figure number01 A-110.2.4.4 Assembly related information.01 A-

30、110.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherw

31、ise specified, the following specifications,standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications andStandards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo

32、reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96607REVISION LEVELASHEET16DESC FORM 193AJUL 94Document No: 5962-96607Revision: AAPPENDIX A NOR No: 5962-R204-97APPENDIX A FORMS A PART OF S

33、MD 5962-96607 Sheet: 4 of 8 SPECIFICATIONMILITARYMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSMIL-STD-883 - Test Methods and Procedures for Microelectronics.HANDBOOKMILITARYMIL-HDBK-103 - List of Standardized Military Drawings (SMDs).(Copies of the specifica

34、tion, standards, bulletin, and handbook required by manufacturers in connection with specific acquisitionfunctions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing and th

35、e references cited herein, the text ofthis drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management

36、(QM) plan. Themodification in the QM plan shall not effect the form, fit or function as described herein.30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified inMIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V

37、 and herein.30.2.1 Die Physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be asspecified in 10.2.4.2 and on figure A-1.30.2.3 Inte

38、rface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.Provided by IHSNot for ResaleNo reproduction or networking permitted without

39、 license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96607REVISION LEVELASHEET17DESC FORM 193AJUL 94Document No: 5962-96607Revision: AAPPENDIX A NOR No: 5962-R204-97APPENDIX A FORMS A PART OF SMD 5962-96607 Sheet: 5 of 8 30.2.5 Radiation

40、 exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.3 of the body of thisdocument.30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post-irradiatio

41、n parameter limits are as specified in table I of the body of this document.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficientto make the packaged die capable of meeting the electrical performance requirements in table I.30

42、.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer,shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN listed in 10.2herein. The certification mark shall be a “QM

43、” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DS

44、CC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.30.7 Certificate of conformance. A certificate of conformance as required for device cl

45、asses Q and V in MIL-PRF-38535 shallbe provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the

46、device manufacturers Quality Management (QM) plan. The modifications in the QMplan shall not effect the form, fit or function as described herein.40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum

47、it shall consist of:a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or the alternate procedures allo

48、wed within MIL-STD-883 TM5004.40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4.Provided by IHSNot for ResaleNo reproduction or networking pe