DLA SMD-5962-96604 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 10 LINE TO 4 LINE BCD PRIORITY ENCODER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体10行到4行二进制编码的十进制解码器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96604 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 10 LINE TO 4 LINE BCD PRIORITY ENCODER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体10行到4行二进制编码的十进制解码器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96604 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 10 LINE TO 4 LINE BCD PRIORITY ENCODER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体10行到4行二进制编码的十进制解码器硅单片电路数字微电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 - ._ SMD-59b2-9bb04 REV A m 999999b O322087 892 E . ORIGINATOR I. TYPED NAME (First, Middle Initial Lasr) NOTICE OF REVISION (NOR) b. ADDRESS (Street, CiE DO NOT REBTCIRN YOUR COMPLETED boRh To Emlk OF - add “A“. Revisions description column; add “Changes in accordance with NOR 5962-R043-98“. Revis

2、ions date column; add “9843-13. Revision level block; add “A. Rev status of sheets; for sheets 1, 4, and 14 through 20, add “A“. Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. Revision level block; add “A“

3、. Sheets 14 through 20: Add attached appendix A. CONTINUED ON NEXT SHEETS 14. THIS SECTION FOR GOVERNMENT USE ONLY (1) Existing document supplemented by the NOR may be used in manufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master

4、document shall make above revision and furnish revised document. b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DSCC-VAS c. TYPED WAME (First, Middle Initial, Last) RAYMOND L. MONNIN d. TITLE CHIEF, MICROELECTRONICS TEAM e. SIGNATURE RAYMOND L. MONNIN f. DATE SIGNED (Y YMMDD) 98-03-1 3 Prov

5、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96604 SIZE A 5962-96604 REVISION LEVEL SHEET A 14 Document No: 5962-96

6、604 Revision: A Sheet: 2 of 8 NOR NO: 5962-R043-98 10. SCOPE 10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers appro

7、ved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space appli

8、cation (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m. The PIN shall be as shown in the following example: Federal RHA Device Device Die Die Stock class designator type

9、class code Details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) (see 10.2.3) Drawing Number 10.2.1 RHA desianator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA ievelc. A dash (-) indicates a non-RHA die. 10.2.2 Device distribution is unlimited

10、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9bbOY = 99b 0084187 OT8 STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1.1 a. This drawing form a part of a one part - one part nunber docunentation system (

11、see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes P and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Nunber (PIN). 1.2.1 of MIL-STD-883, IOPro

12、visions for the use of MIL-STD-883 in conjunction uith compliant non-JAN devices“. available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. Device class M microcircuits represent non-JAN class B microcircuits in accordance with When I 1.2 m. lhe PIN shall be as shou

13、n in the following example: 5962 R Federal RHA 96604 “i Devi ce L Device 1 Case i Lead stock class designator type class out 1 ine finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) 11 LA (see 1.2.3) / Drawing nunber 1.2.1 MA des- . Device class M RHA marked devices shall m

14、eet the MIL-1-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. MIL-PRF-38535 specified RHA levels and shall be marked uith the appropriate RHA designator. non-RHA device. Device classes P and V RHA marked devices shall meet the A dash (-1 indicates a 1.2

15、.2 Device tww . lhe device type(s) shall identify the circuit function as follows: Device tme ic nurl?er ircuit function SIZE A 5962-96604 REVISION LEVEL SHEET 2 o1 401478 Radiation hardened CMOS 10 line to 4 line BCD priority encoder 1.2.3 pevice class desisnator . The device class designator shall

16、 be a single letter identifying the product assurance levei as follows: Device clasg pevice reauirements docwntat i on M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance uith 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-PRF-38535 1.2

17、.4 Case outiinetsl . lhe case outline(s) shall be as designated in MIL-STD-1835 and as follow: Putline letter Descri Dt ive desisnatw Packase stvle Termi na1 s E X CDIP2-Tl6 CD FP4- F 16 16 16 Dual-in-line package Flat package 1.2.5 Lead fini& . The lead finish shall be as specified in MIL-STD-883 (

18、see 3.1 herein) for class M or MIL-PRF- 38535 for classes P and V. Finish letter 81X11 shall not be marked on the microcircuit or its packaging. The llX1t I designation is for use in specifications when lead finishes A, E, and C are considered acceptable and interchangeable Provided by IHSNot for Re

19、saleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96604 = 9999996 0084388 T3Y SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 1.3 ratin= . -1/z/z/ Supply voltage range (VDD) Input voltage range . DC input current, any one input D

20、evice dissipation per output transistor . Storage temperature range (T ) . Lead temperature (soldering,ST8 seconds) . Thermal resistance, junction-to-case (eJc): CaseE. Casex. CaseE . Casex. Thermal resistance, junction-to-ambient JA): Junction temperature (TJ) . Maximm power dissipation at TA = +12

21、5C (PD): CaseE. Casex. 5962-96604 REVISION LEVEL SHEET 3 1.4 W-Qina cw. Supply voltage range (IlDD) Case operating temperature range (TC) . Input voltage (VIN) Radiation features: Total dose Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.4) . Dose ra

22、te upset (20 ns pulse) . Dose rate latch-up Dose rate survivability Output voltage (ilouT) . -0.5 V dc to +20 V dc -0.5 V dc to VDD + 0.5 Vdc 100 rfkl -65C to +150C i10 mA +265*c 24C/U 29“C/U 73“C/U 114“C/W +175C 0.68 u 0.44 U 3.0 V dc to +18 V dc -55C to +125“C o v to VDD o v to VDD E MEV/?/W u 1 x

23、 lo5 Rads (Sil 5 x 10 Rads(Si)/s 5/ 2 x lo8 Rads(Si)/s u 5 x 10l1 Rads(Si)/s 5/ 2. APPLICABLE DOCWENTS 2.1 -cification. st-rds. bulletin. and handbook . Unless otherwise specified, the following . specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of

24、 Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATION Mi LITARY MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS Mi LI TARY MIL-STD-883 - Test Methods and Procedu

25、res for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. - 1/ 2/ z/ 4/ Stresses above the absolute maxim rating may cause permanent damage to the device. maxim levels may degrade performance and affect reliability. Unless otherwise specified, all v

26、oltages are referenced to Vss. The limits for the parameters specified herein shall apply over the full specified Vcc range and case temperature range of -55C to +125“C unless otherwise noted. If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derati

27、ng is based on JA) at the following rate: Guaranteed by design or process but not tested. Extended operation at the Case E . 13.7 W/C Casex . 8.8W/“C i/ DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-BULLET I N MILITARY MIL-BUL

28、-103 - List of Standardized Military Drawings (SMDs). HANDBOOK MILITARY MIL-HDBK-780 - Standardized Military Drawings. (Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting a

29、ctivity or as directed by the contracting activity.) 2.2 grder of Drec-. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Jtem reauiremenb . lhe individual item requirements for device cla

30、ss M shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. The individual item requirements for device classes P and V shall be in accordance with MIL-PRF-38535 and as specified herein or as mo

31、dified in the device manufacturers Quality Management (PM) plan. plan shall not affect the form, fit, or function as described herein. lhe modification in the OM 3.2 Desisn. construction. and ohvsical dimensions . The design, construction, and physical dimensions shall be as specified in MIL-STD-883

32、 (see 3.1 herein) for device class M and MIL-1-38535 for device classes P and V herein. 3.2.1 Case outlines . 3.2.2 Jrrminal connect iong. The terminal connections shall be as specified on figure 1. 3.2.3 uh tables The truth tables shall be as specified on figure 2. 3.2.4 Radiation test conmctions .

33、 lhe radiation test connections shall be as specified in table III herein. 3.3 Flectrical wrforwce cmacte ristics and mst irradiation rmrameter l imits. Unless otherwise specified The case outlines shall be in accordance with 1.2.4 herein. herein, the electrical performance characteristics and posti

34、rradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electr ical test reaui remen& . The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3

35、.5 w. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein). In addition, the manufacturers PIN may also be marked as listed in MIL-BUL-103. Marking for device classes O and V shall be in accordance with MIL-PR

36、F-38535. . 3.5.1 Certification/cmliance mark . The compliance mark for device class M shall be a V1 as required in MIL-STD-883 (see 3.1 herein). in MIL-PRF-38535. lhe certification mark for device classes P and V shall be a 1W4L11 or Wi as required 3.6 ert ificate of cm1 iance. For device class M, a

37、 certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.2 herein). classes P and V, a certificate of compliance shall be required from a PML-38535 listed manufacturer in order to supply to the requirements of this

38、 drawing (see 6.7.1 herein). lhe certificate of compliance sutmitted to DESC-EC prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes P and V, th

39、e requirements of MI L- PRF-38535 and the requi rements herein. For device SIZE A STAN DARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 5962-96604 REVISION LEVEL SHEET 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-3.9 &

40、rification and review for device class H . retain the option to revieu the manufacturers facility and applicable required docunentation. shall be made available onshore at the option of the reviewer. For device class M, DESC, DESCs agent, and the acquiring activity Offshore docwntation 3.10 Microcir

41、cuit wouo assigCIlpnt for device class If . Device class M devices covered by this drauing shall be in microcircuit group nunber 38 (see MIL-1-38535, appendix A). 4. PUALITY ASSURANCE PROVISIONS REVISION LEVEL 4.1 Snmglina and insrectiQn . For device class M, sanpling and inspection procedures shall

42、 be in accordance with MIL-STD-883 (see 3.1 herein). For device classes Q and V, sanpling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers quality management (QM) plan. PM plan shall not affect form, fit, or function as described herein.

43、The modification in the 4.2 Scrsenina . . For device class M, screening shall be in accordance uith method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. accordance uith MIL-PRF-38535, and shall be conducted on all devices prior to qualification a

44、nd technology conformance inspection. For device classes P and V, screening shall be in 4.2.1 rnitional criteria for device class 4. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under docwnent revision level c

45、ontrol and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) TA = +125C, minim. b. Interim and final electrica

46、l test parameters shall be as specified in table IIA herein. 2.2 Witional criteria for device classes P and y. a. The burn-in test duration, test condition and test tenperature, or approved alternatives shall be as specified in the device manufacturers PM plan in accordance with MIL-PRF-38535. maint

47、ained under docunent revision level control of the device manufacturers Technology Review Board (TRB) in accordance uith MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, a

48、s applicable, in accordance with the intent specified in test method 1015. Interim and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class P shall be as specified in appendix B of MIL-PRF-38535 or

49、 as modified in the device manufacturers quality management (QM) plan. The burn-in test circuit shall be b. c. . . 4.3 Qualification inswction for device classes P and y . Qualification inspection for device classes P and V shall Inspections to be performed shall be those specified in MIL-PRF-38535 and herein be in accordance uith MIL-PRF-38535. for groups A, B, C, O, and E inspections (see 4.4.1 through 4.4.4). 4.3.1 Electrostatic discharoe sens itivi