DLA SMD-5962-96599 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 9 BIT PARITY GENERATOR CHECKER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体9-BIT发生器或监测器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96599 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 9 BIT PARITY GENERATOR CHECKER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体9-BIT发生器或监测器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96599 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 9 BIT PARITY GENERATOR CHECKER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体9-BIT发生器或监测器硅单片电路数字微电路》.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、SUD-59b2-96.599 REV 0 9999996 OLL7282 720 NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT USTED. 1. DATE (WMMDD) 97-07-24 4. ORIlNATOR a. TYPED NAME (Fini, MMde Initia4 hSQ 12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES I All b. ADDRESS (Slmet Sta

2、te, Zg code) 5. CAGE CODE 67268 Defense Supply Center Cdumkis 3990 East Broad Street Cdurnbus, OH 4321 add B. Revisions description mkimn; add Changes in accordance wilh NOR 5962-FEBO-97 Revisions date mlumn; add 9747-24 Revision level Mod75 MEV/(cm2/mg) 5/ 5 x IOe Rads(Si)/s U 2 x IOe Rads(Si)/s 5/

3、 5 x 10l1 Rads(Si)/s U . 2.1 Government soecification. standards. bulletin. and handbook . Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the

4、solicitation, form a part of this drawing to the extent specified herein. SPECIFICATION MILITARY MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MI LI TARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management.

5、 MIL-STD-1835 - Microcircuit Case Outlines. - 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. maximum levels may degrade performance and affect reliability. u Unless otherwise specified, all voltages are referenced to Vss. I/ The limits for the parameters spec

6、ified herein shall apply over the full specified Y, range and case temperature range of -55C to +125“C unless otherwise noted. If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on eJA) at the following rate: Extended operation at t

7、he Case C . 13.5 W/“C CaseX . 8.6mU/OC 5/ Guaranteed by design or process but not tested. 5962-96599 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted with

8、out license from IHS-,-,-SMD-5962-96579 9999996 0082334 390 BULLETIN MI L I TARY MIL-EUL-103 - List of Standardized Military Drawings (SMDIS). MILITARY MIL-HDBK-780 - Standardized Military Drawings. (Copies of the specification, standards, bulletin, and handbook required by manufacturers in connecti

9、on with xcific acquisition functions should be obtained from the contracting activity or as directed by the contracting Etivity.) 2.2 prder of Drecedencp. In the event of a conflict between the text of this drawing and the references cited vein, the text of this drawing shall take precedence. 3. REQ

10、UIREMENTS 3.1 Jtem rwuirm . The individual item requirements for device class M shall be in accordance with 1.2.1 of IL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified erein. 3ecified herein or as modified in the device manufacturers Qu

11、ality Management (QM) plan. lan shall not affect the form, fit, or function as described herein. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as The modification in the QM 3.2 man. construction. and Dhvsical dimensions . The design, constr

12、uction, and physical dimensions shall be as 3ecified in MIL-STD-883 (see 3.1 herein) for device class M and MIL-1-38535 for device classes Q and V herein. 3.2.1 Case outlines . 3.2.2 -1 connections . 3.2.3 Jruth tabls The truth tables shall be as specified on figure 2. 3.2.4 adiation test con nectio

13、ns. The radiation test connections shall be as specified in table 111 herein. irradiation Darameter limits. Unless otherwise specified 3.3 Electrical DerfqCmance characteristics and Dost erein, the electrical performance characteristics and postirradiation parameter limits are as specified in table

14、I nd shall apply over the full case operating temperature range. 3.4 Electrical test reauirements. The electrical test requirements shall be the subgroups specified in table IIA. he electrical tests for each subgroup are defined in table I. The case outlines shall be in accordance with 1.2.4 herein.

15、 The terminal connections shall be as specified on figure 1. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in :cordance with MIL-STD-883 (see 3.1 herein). IL-BUL-103. In addition, the manufacturers PIN may also be marked as listed in Mar

16、king for device classes Q and V shall be in accordance with MIL-PRF-38535. . 3.5.1 Certification/cmliance mark IL-STD-883 (see 3.1 herein). 1 MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in . The certification mark for device classes Q and V shall be a llQMLL or I

17、lQll as required . 3.6 certificate of cmliance snufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.2 herein). lasses Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply J the requirements of this drawing

18、 (see 6.7.1 herein). The certificate of compliance submitted to DESC-EC prior to sting as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for :vice class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Q and V, the requireme

19、nts of IL-PRF-38535 and the requirements herein. 3.7 Cert ificate of conformance . .I herein) or for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered J this drawing. 3.8 Notification of chanse for device class Y . see 6.2 herein) involving devices ac

20、quired to this drawing is required for any change as defined in MIL-STD-973. For device class M, a certificate of compliance shall be required from a For device A certificate of conformance as required for device class M in MIL-STD-883 (see For device class M, notification to DESC-EC of change of pr

21、oduct SIZE I 5962-96599 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96599 999799b 0082LL5 O27 SIZE A STANDARD M

22、ICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 3.9 yerification and review for device class Y . retain the option to review the manufacturers facility and applicable required documentation. shall be made available onshore at the option of the reviewer. For de

23、vice class M, DESC, DESCs agent, and the acquiring activity 0ffshor.e documentation 3.10 bicrocircuit qrouD assmnt for device class B . Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-1-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Sarrolina

24、 gmd inspect ion. For device class M, sampling and inspection procedures shall be in accordance with MIL-STD-883 (see 3.1 herein). For device classes Q and V, sapling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers quality management (QM

25、) plan. QM plan shall not affect form, fit, or function as described herein. conducted on all devices prior to quality conformance inspection. The modification in the 4.2 Screen ins. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be For device classes

26、 Q and V, screening shall be in 5962-96599 SHEET 5 accorda inspect 4.2.1 a. ( ce with MIL-PRF-38535, and .shall-be conducted on all devices prior to qualification and technolgy conformance on. itional criteria for device cl-. ._ .- Burn-in test, method 1015 of MIL-STO-883. ) Test condition A, BI C,

27、or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with t

28、he intent specified in test method 1015. (2) TA = +125“C, minim. b. Interim and final electrical test parameters shall be as specified in table IIA herein. .- 2.2 $litional criteria for device classes Q and I. a. The burn-in test duration, test condition and test temperature, or approved alternative

29、s shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. maintained under docunent revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity

30、 upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. Interim and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class

31、V beyond the requirements of device class P shall be as specified in appendix i3 of MIL-PRF-38535 or as modified in the device manufacturers quality management (QM) plan. The burn-in test circuit shall be b. c. 4.3 Qualification inswction for device classes Q and V. Qualification inspection for devi

32、ce classes Q and V shall Inspections to be performed shall be those specified in MIL-PRF-38535 and herein be in accordance with MIL-PRF-38535. for groups A, BI C, Dl and E inspections (see 4.4.1 through 4.4.4). . . 4.3.1 Lt ect rost at ic discharqe sens itivitv (ESDS) IM pian including groups A, B,

33、C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 Emits alternate in-line control testing. Inspections to be performed for device class M shall be those DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

34、m IHS-,-,-SMD-5962-96599 = 9999996 0082LLb T63 = Test Supply current Low level output current (sink) High level output current (source) TABLE I. Electrical Derfo rmance character istics. 1 DD Conditions -55C 5 T, 5 +125“C unless otherwise specified v, = 5 v VIN = GND V or V, v, = 10 v VIN = GND V or

35、 VDD VDD = 15 V VIN = GND V or VDD V, = 20 V, VIN = GND V or VDD VDD = 18 V, VIN = GND V or VD, v, 5 v Vo = 0.4 V VIN = GND V or VDD v, = 10 v Vo = 0.5 V VIN = GND V or V, V, = 15 V Vo = 1.5 V VIN = GND V or V, VDD = 5 v Vo = 4.6 V VIN = GND V or VDD v, = 5 v V, = 2.5 V VIN = GND V or V, v, = 10 v v

36、o = 9.5 v VIN = GND V or VDD V, = 15 V Vo = 13.5 V V, = GND V or V, Device Group A Limits Units 1000 25 -0.53 mA -0.36 -0.64 -1.8 -1 .I5 -2.0 -1.4 -0.9 -1.6 -3.5 -2.4 -4.2 STANDARD M IC ROC1 RC UIT D RAW1 N G DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 t I 5962-96599 I REVISION LEVEL SHEET

37、I 6 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-9b599 = 9999996 0082117 9TT TABLE I. Flectrical wrformn ce characteristics - Continued. Condi ti ons unless otherwise specified -55C 5 T, 5 +125“C Device type Test Gro

38、up A Limits Unit subgroups Al 1 1, 2, 3 I 4.95 I IV Output voltage, high V, 5 VI no load J./ V, = 10 VI no load 1/ 1, 2, 3 I 9.95 I I V, = 15 VI no load I/ 1, 2, 3 I 14.95 I I - Output voltage, low VOL V, = 5 VI no load 1/ Al 1 V, 10 VI no load 1/ V, 15 VI no load v, = 5 v V, 4.5 VI VOL 9.0 VI VOL 1

39、3.5 VI VOL 4.5 V, VOL 9.0 V, VOL 1.0 V 1/ V, 15 V V, 13.5 VI VOL 1.5 V Input Leakage current, 1 ow 1 IL VIN = VDD or GND, VDD - 20 Al 1 Input Leakage current, high Al 1 N threshold voltage VNTH VDD = 10 V, Iss = -10 FA Al 1 Al 1 N threshold voltage, delta Al 1 P threshold voltage VPTH AL L Al 1 P th

40、reshold voltage, delta AL 1 STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 5962-96599 I REVISION LEVEL DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Flectrical Derformance wcter ist

41、ics - Continued. Conditions unless otherwise specified -55C 5 Tc 5 +125“C Test Device type Al 1 Al 1 Al 1 Al 1 Functional tests VDD = 2.8 V, VI, = V, or GND VDD = 20 V, V, = V, or GND VDD = 18 V, VIN = VD, or GND M, D, L, R Y VDD = 3.0 V, VIN = VDD or GND IM, D, L, R Y Al 1 Input capacitance Any inp

42、ut, See 4.4.1 AL 1 Propagation delay data- in to output VDD 5 V, VIN = V, or GND All w Propagation delay inhibit-in to output w tEnL2 tPW VDD = 5 V, V, = V, or GND Al l Transition time !u VDD = 5 V, VIN = VDD or GND All ALL Al 1 Al 1 v, = 10 v Propagation delay data to output l/4/ Propagation delay

43、inhibit to output Transition time 1/!u uw VDD = 15 V VDD = 10 v VDD = 15 V :THL, :TLH v, 10 v V, = 15 V These tests are controlled via design or process and are not directly tested. on initial design release and upon design changes which affect these characteristics. 1/ Devices supplied to this draw

44、ing will meet all levels M, D, L, R of irradiation. tested at the IR1 level. Uhen performing post irradiation electrical measurements for any RHA Level, TA = +25“C. z/ For accuracy, voltage is measured differentially to VDD. 4/ CL = 50 pF, R, = 200KC2, Input T, TP 20 ns. These parameters are charact

45、erized However, this device is only Limit is 0.050 V Max. 4.4.1 Grow A instxction. a. b. Tests shall be as specified in table IIA herein. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. For device classes Q and V, subgroups 7 and 8 shall

46、include verifying the functionality of the device. Subgroup 4 (GIN measurement) shall be measured only for the initial qualification and after process or design changes which may affect capacitance. frequency of 1 MHz. c. CIN shall be measured between the designated terminal and GND at a Tests shall

47、 be sufficient to validate the limits defined in table I herein. SIZE 5962-96599 , REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

48、HS-,-,-SMD-5762-96599 m 9999996 OO2LL9 772 m REVISION LEVEL 4.4.2 ErouD C wct ion. The group C inspection end-point electrical parameters shall be as specified in table I IA herein. . 4.4.2.1 Additional criteria for device class M Steady-state life test conditions, method 1005 of MIL-STD-883: a. Tes

49、t condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005. The test b. TA = +125OC, minim. c. Test duration: 1,000 hours, exc