DLA SMD-5962-96590 REV C-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 八角D类三状态输出双稳态多谐振.pdf

《DLA SMD-5962-96590 REV C-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 八角D类三状态输出双稳态多谐振.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96590 REV C-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 八角D类三状态输出双稳态多谐振.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R134-97. - JB 96-11-19 Monica L. Poelking B Changes in accordance with NOR 5962-R292-97. - CFS 97-05-06 Monica L. Poelking C Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update t

2、he boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout. - CFS 06-11-14 Thomas M. Hess REV SHET REV C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 REV C C C C C C C C C C C C C C REV STATUS OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh

3、 V. Nguyen CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 96-07-08 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SI

4、LICON SIZE A CAGE CODE 67268 5962-96590 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REVISION LEVEL C SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E614-06 Provided by IHSNot for ResaleNo reproduction or networking p

5、ermitted without license from IHS-,-,-SIZE A 5962-96590 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (

6、device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as

7、shown in the following example: 5962 H 96590 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devi

8、ces meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s

9、). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS374 Radiation hardened, octal D-type flip-flop with three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance

10、level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s).

11、The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-

12、PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96590 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Abso

13、lute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperatur

14、e range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V

15、 dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ Case operating temperature range (TC). -55C to +125C 1.5 Radiation features. 5/ Total dose 1 x 106Rads (Si) Single event phenomenon (SEP) effectiv

16、e: Linear energy threshold (LET), no upsets (see 4.4.4.4). 80 MeV/(mg/cm2) Linear energy threshold (LET), no latch-up (see 4.4.4.4). 120 MeV/(mg/cm2) Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s Latch-up. None Dose rate survivability 1 x 1012Rads (Si)/s 1/ Stresses above the absolute maximum rat

17、ing may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and

18、 case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. Provided by IHSNot for ResaleNo reproduction or networking per

19、mitted without license from IHS-,-,-SIZE A 5962-96590 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, sta

20、ndards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification f

21、or. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of

22、 these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this dr

23、awing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q

24、and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall

25、be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dime

26、nsions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified

27、on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test

28、connections. The irradiation test connections shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in t

29、able IA and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96590 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5

30、DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufactur

31、ers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device clas

32、ses Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark fo

33、r device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For devic

34、e class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm tha

35、t the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-

36、38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this dra

37、wing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be m

38、ade available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted wi

39、thout license from IHS-,-,-SIZE A 5962-96590 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise

40、 specified Device type VDDGroup A subgroups Min Max Unit All 1, 2, 3 3.15 M, D, P, L, R, F, G, H 3/ All 4.5 V 1 3.15 All 1, 2, 3 3.85 High level input voltage VIH M, D, P, L, R, F, G, H 3/ All 5.5 V 1 3.85 V All 1, 2, 3 1.35 M, D, P, L, R, F, G, H 3/ All 4.5 V 1 1.35 All 1, 2, 3 1.65 Low level input

41、 voltage VIL M, D, P, L, R, F, G, H 3/ All 5.5 V 1 1.65 V For all inputs affecting output under test, VIN= VDDor VSSIOH= -100 A All 1, 2, 3 4.25 High level output voltage VOH M, D, P, L, R, F, G, H 3/ All 4.5 V 1 4.25 V For all inputs affecting output under test, VIN= VDDor VSSIOL= 100 A All 1, 2, 3

42、 0.25 Low level output voltage VOL M, D, P, L, R, F, G, H 3/ All 4.5 V 1 0.25 V For input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll 1, 2, 3 +1.0 Input current high IIH M, D, P, L, R, F, G, H 3/ All 5.5 V 1 +1.0 A For input under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll

43、 1, 2, 3 -1.0 Input current low IIL M, D, P, L, R, F, G, H 3/ All 5.5 V 1 -1.0 A For output under test, VOUT= VDD - 0.4 V VIN= VDDor VSSAll 1, 2, 3 -8.0 Output current (source) IOH4/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 1 -8.0 mA For output under test, VOUT= 0.4 V VIN= VDDor VSSAll 1, 2, 3

44、8.0 Output current (sink) IOL4/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 1 8.0 mA VIN= VDDor VSSAll 1, 2, 3 10.0 Quiescent supply current IDDQM, D, P, L, R, F, G, H 3/ All 5.5 V 1 10.0 A Short circuit output current IOS5/ 6/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA See footnotes at end of table

45、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96590 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics

46、 Continued. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Min Max Unit OC = 5.5 V For all other inputs, VIN= VDDor VSSVOUT= VDD All 1, 2, 3 +20.0 Three-state output leakage current, high IOZHM, D, P, L, R, F, G, H 3/ All 5.5 V 1 +2

47、0.0 A OC = 5.5 V For all other inputs, VIN= VDDor VSSVOUT= VSS All 1, 2, 3 -20.0 Three-state output leakage current, low IOZLM, D, P, L, R, F, G, H 3/ All 5.5 V 1 -20.0 A Input capacitance CINf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF CL=

48、 50 pF, per switching output All 4, 5, 6 1.9 Switching power dissipation PSW7/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 4 1.9 mW/MHzVIH= 0.7 VDD, VIL= 0.3 VDD See 4.4.1b All 7, 8 L H Functional test 8/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 7 L H CL= 50 pF minimum See figure 4 All 9, 10, 11 1.0 15.0 tPLH9/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 9 1.0 15.0 CL= 50 pF minimum See figure 4 All 9, 10, 11 1.0 18.0 Propagation delay time, CLK to nQ tPHL9/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 9 1.0 18.0 ns CL= 50 pF minimum See figur