DLA SMD-5962-95818 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 8-BIT INPUT OUTPUT PORT MONOLITHIC SILICON《抗辐射互补金属氧化物半导体8-BIT输入或输出端硅单片电路线型微电路》.pdf
《DLA SMD-5962-95818 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 8-BIT INPUT OUTPUT PORT MONOLITHIC SILICON《抗辐射互补金属氧化物半导体8-BIT输入或输出端硅单片电路线型微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-95818 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 8-BIT INPUT OUTPUT PORT MONOLITHIC SILICON《抗辐射互补金属氧化物半导体8-BIT输入或输出端硅单片电路线型微电路》.pdf(26页珍藏版)》请在麦多课文档分享上搜索。
1、 SMD-59b2-9SL REV A 9999996 O121320 442 THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. I NOTICE OF REVISION (NOR) ktr add “A“. Revisions description column; add Changes in accordance with NOR 59624301 8-98“. Revisionsdate column; add 98-02-10. Revision level block; add A.
2、 Rev status of sheets; for sheets 1,4, and 17 through 23, add “A“. Sheet 4: Add new paragraphwhich states; “3.1.1 Microcircuitdie. For the requirementsfor microcircuit die, see appendix A to this document. Revision level block; add “A. Sheets 17 through23: Add attached appendixA. CONTINUED ON NEXT S
3、HEETS f. DATE SIGNED (YYMMDD) 98-02-1 O c. DATE SIGNED (YYMMDD) 98-02-1 O DD Form 1695, APR 92 Previous editions are obsolete. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-75818 REV A 999999b 0323723 389 APPENDIX A APPENDIX A FORMS A PAR
4、T OF SMD 5962-9581 8 Document No: 5962-95818 Revision: A Sheet: 2 of 8 NOR NO: 5962-R018-98 I lo- 10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-
5、PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliabi
6、lity (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m. The PIN shall be as shown in the following example: Federal RHA Device Device
7、 Die Die Stock class designator type class code Details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) (see 10.2.3) * Drawing Number 10.2.1 RHA desianator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. 1
8、0.2.2 Device tvpels). The device type(s) shall identify the circuit function as follows: Device ivpe Generic number Circuit function o1 I 10.2.3 Device class desianator. Device class Cl orV 82C12RH Radiation Hardened, CMOS, 8-bit inpuoutput port Device requirements documentation Certification and qu
9、alification to the die requirements of MIL-PRF-38535. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43216-5000 P DSCC FORM 2234 APR 97 SIZE A 5962-9581 8 SHEET 17 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-APPENDIX
10、 A APPENDIX A FORMS A PART OF SMD 5962-9581 8 Document No: 5962-9581 8 Revision: A Sheet: 3 of 8 NOR NO: 5962-R018-98 10.2.4 Die Details. The die details designation shall be a unique letter which designates the dies physical dimensions, bonding pad location(s) and related electrical function(s), in
11、terface materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die Phvsical dimensions. Die TvDe Fiaure number O1 A- 1 10.2.4.2 Die Bondina Dad locations and Electrical functions. I Die TvDe o1 10.2.4.3 Interface Materials. Fiaure number A
12、- 1 Die TVDe Fiaure number I o1 A-1 10.2.4.4 Assembly related information. I o1 A- 1 10.3 Absolute maximum ratinas. See paragraph 1.3 within the body of this drawing for details. I 10.4 Recommended operatina conditions. See paragraph 1.4 within the body of this drawing for details. 20. APPLICABLE DO
13、CUMENTS 20.1 Government soecifications. standards, bulletin, and handbooks. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation,
14、form a part of this drawing to the extent specified herein. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43216-5000 SIZE A REVISION LEVEL A 5962-9581 8 SHEET 18 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license
15、from IHS-,-,-SHD-5962-95818 REV A m 9977996 0121723 151 m , 30.2.4 Assemblv related information. The assembly related information shall be as specified in 10.2.4.4. and figure A-1 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9581 8 SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Cir
16、cuits, Manufacturing, General Specification for. STAN DARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Methods and Procedures for Microelectronics. HANDBOOK DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standardized Military Drawings (SMDs). Document No: 5962-95818 Revision: A Sheet: 4 of 8 NOR NO: 596
17、2-R018-98 (Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). 20.2 Order of DreCedenCe. In the event of a conflict bet
18、ween the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. REQUIREMENTS 30.1 Item Reuuirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the
19、device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit or function as described herein. 30.2 Desiun, construction and DhVSiCal dimensions. The design, construction and physical dimensions shall be as specified in MIL-PRF-38535 and the manufa
20、cturers QM plan, for device classes Q and V and herein. 30.2.1 Die Phvsical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1. 30.2.2 Die bondinq pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as speci
21、fied in 10.2.4.2 and on figure A-1 . 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3. and on figure A-1 . STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 4321 6-5000 I DSCC FORM 2234 APR 97 SIZE A 5962-9581 8 SHEET 19 Pro
22、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-95818 REV A m 9999996 0121724 098 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95818 Document No: 5962-9581 8 Revision: A Sheet: 5 of 8 NOR NO: 596243018-98 30.2.5 Truth Table. The truth table s
23、hall be as defined within paragraph 3.2.3 of the body of this document. 30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of this document. 30.3 Electrical performance characteristics and Dost- irradiation parameter limits. Unles
24、s otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. 30.4 Electrical test reauirements. The wafer probe test requirements shall include functional and parametric testing sufficient to
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