DLA SMD-5962-95813 REV G-2013 MICROCIRCUIT LINEAR RADIATION HARDENED CMOS DUAL SPDT ANALOG SWITCHES MONOLITHIC SILICON.pdf

《DLA SMD-5962-95813 REV G-2013 MICROCIRCUIT LINEAR RADIATION HARDENED CMOS DUAL SPDT ANALOG SWITCHES MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95813 REV G-2013 MICROCIRCUIT LINEAR RADIATION HARDENED CMOS DUAL SPDT ANALOG SWITCHES MONOLITHIC SILICON.pdf（30页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add paragraph 3.1.1 and appendix A for microcircuit die. Changes in accordance with N.O.R. 5962-R168-96. 96-08-01 R. MONNIN B Make changes to boilerplate and add device class T. - ro 98-12-04 R. MONNIN C Drawing updated to reflect current require

2、ments. - gt 03-01-06 R. MONNIN D Add device type 04. Delete dose rate upset testing. - ro 06-12-12 R. MONNIN E Make limit changes to the “Supply voltage between V and ground” parameter as specified under paragraph 1.3. - ro 07-02-27 J. RODENBECK F Add device type 05. - ro 08-06-19 R. HEBER G Correct

3、ed device types 04 and 05 technology from CMOS to BiCMOS. Add BiCMOS device types 06, 07, and 08. Delete latch up data from paragraph 1.5, paragraph 4.4.4.3 dose rate induced latchup testing, and paragraph 4.4.4.4 dose rate burnout. Delete table III and references to device class M requirements. - r

4、o 13-03-22 C. SAFFLE REV SHEET REV G G G G G G G G G G G G G G SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY SANDRA ROONEY DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.land

5、andmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY SANDRA ROONEY APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR RADIATION HARDENED CMOS, DUAL SPDT ANALOG SWITCHES, MONOLITHIC SILICON DRAWING AP

6、PROVAL DATE 95-11-09 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-95813 SHEET 1 OF 28 DSCC FORM 2233 APR 97 5962-E143-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95813 DLA LAND AND MARITIME CO

7、LUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (device cl

8、ass T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality M

9、anagement (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95813 01 V C C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator C

10、ase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s

11、). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS303RH Radiation hardened DI, dual SPDT CMOS switch 02 HS307RH Radiation hardened DI, dual SPDT CMOS switch 03 HS390RH Radiation hardened DI, dual SPDT CMOS switch 04 HS303ARH Radiation ha

12、rdened DI, dual SPDT BiCMOS switch 05 HS303BRH Radiation hardened DI, dual SPDT BiCMOS switch 06 HS303AEH Radiation hardened DI, dual SPDT BiCMOS switch 07 HS303BEH Radiation hardened DI, dual SPDT BiCMOS switch 08 HS303CEH Radiation hardened DI, dual SPDT BiCMOS switch 1.2.3 Device class designator

13、. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device man

14、ufacturers approved quality management plan. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95813 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case out

15、line(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line E CDIP2-T16 16 Dual-in-line X CDFP3-F14 14 Flat package Y CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is as specif

16、ied in MIL-PRF-38535 for device classes Q, T and V. 1.3 Absolute maximum ratings. 1/ Supply voltage between +V and -V : Device types 01, 02, 03 . 44 V Device types 04, 05, 06, 07, and 08 35 V Supply voltage between +V and ground : Device types 01, 02, 03 . 22 V Device types 04, 05, 06, 07, and 08 17

17、.5 V Supply voltage between -V and ground : Device types 01, 02, 03 . -22 V Device types 04, 05, 06, 07, and 08 -17.5 V Digital input overvoltage : +VA. +VSUPPLY+ 4 V -VA-VSUPPLY- 4 V Analog input overvoltage : +VS. +VSUPPLY+ 1.5 V -VS-VSUPPLY- 1.5 V Continuous current, S or D . 10 mA Peak current,

18、S or D (pulsed at 1 ms, 10 percent duty cycle max) . 40 mA Storage temperature range . -65C to +150C Maximum package power dissipation at 125C (PD) : 2/ Case outlines C and E 0.71 W Case outlines X and Y 0.48 W Thermal resistance, junction-to-case (JC): Case outlines C and E 19C/W Case outlines X an

19、d Y 17C/W Thermal resistance, junction-to-ambient (JA): Case outlines C and E 70C/W Case outlines X and Y 105C/W Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) . +175C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended opera

20、tion at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds package dissipation capacity, provide heat sink or derate linearly (the derating is based on JA) at the following rates: Case outlines C and E 14.3 mW/C Case outlines X and Y . 9.5 mW/C Provided by

21、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95813 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Operating supply voltage (VSUPPLY

22、) : Device types 01, 02, 03, 04, 06, and 08 15 V Device type 05 and 07 12 V Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features Maximum total dose available (dose rate = 50 300 rads(Si)/s) : Device types 01, 02, 03 . 100 krads(Si) 3/ Device types 04 and 05 . 300 krads(Si) 4

23、/ Device types 06 and 07 . 300 krads(Si) 5/ Device types 08 . 100 krads(Si) 6/ Maximum total dose available (dose rate .010 rad(Si)/s): Device type 06, 07, and 08 50 krads(Si) 5/ 6/ Single event latch-up (SEL) No latch up 7/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbo

24、oks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, M

25、anufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Stand

26、ard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 3/ Device types 01, 02, and 03 radiation end point limits for the noted p

27、arameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si). 4/ Device types 04 and 05 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point lim

28、its for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si). 5/ Device types 06 and 07 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL

29、-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) and condition D to a maximum total dose of 50 krads(Si). 6/ Device type 08 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a

30、 maximum total dose of 100 krads(Si) and condition D to a maximum total dose of 50 krads(Si). 7/ Devices use dielectrically isolated (DI) technology and latch up is physically not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MIC

31、ROCIRCUIT DRAWING SIZE A 5962-95813 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing

32、in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in

33、the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions

34、. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1

35、. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Timing diagrams. The timing diagrams shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and sha

36、ll be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I a

37、nd shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed

38、 in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator sha

39、ll still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T

40、and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing

41、shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 appendix A shall be provided with each lot of microc

42、ircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95813 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical perf

43、ormance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max “Switch on” resistance +RDSVD= 10 V, IS= -10 mA 1 01, 02, 50 S1/S2/S3/S4 2,3 03, 08 75 M,D,P,L,R 2/ 1 60 VD= 10 V, IS= -10 mA 1 04, 06 50 S1/S2/S3/S4 2,3 75 M

44、,D,P,L,R,F 2/ 1 60 VD= 10 V, IS= -10 mA 1 05, 07 60 S1/S2/S3/S4 2,3 85 M,D,P,L,R,F 2/ 1 70 -RDSVD= -10 V, IS= 10 mA 1 01, 02, 50 S1/S2/S3/S4 2,3 03, 08 75 M,D,P,L,R 2/ 1 60 VD= -10 V, IS= 10 mA 1 04, 06 50 S1/S2/S3/S4 2,3 75 M,D,P,L,R,F 2/ 1 60 VD= -10 V, IS= 10 mA 1 05, 07 60 S1/S2/S3/S4 2,3 85 M,D

45、,P,L,R,F 2/ 1 70 Leakage current into the +IS(OFF)VS= +14 V, VD= -14 V 1 01, 02, -2 +2 nA source terminal of an S1/S2/S3/S4 2,3 03 -100 +100 “OFF” switch M,D,P,L,R 2/ 1 -100 +100 VS= +14 V, VD= -14 V 3/ 1 04, 06 -10 +10 S1/S2/S3/S4 2,3 -100 +100 M,D,P,L,R,F 2/ 1 -100 +100 VS= +V - 1 V, 3/ 1 05, 07 -

46、10 +10 VD= -V + 1 V, S1/S2/S3/S4 2,3 -100 +100 M,D,P,L,R,F 2/ 1 -100 +100 VS= +14 V, VD= -14 V 1 08 -100 +100 S1/S2/S3/S4 2,3 -150 +150 M,D,P,L,R 2/ 1 -150 +150 VS= +15 V, VD= -15 V 1 08 -1 +1 A S1/S2/S3/S4 2,3 -20 +20 M,D,P,L,R 2/ 1 -20 +20 See footnotes at end of table. Provided by IHSNot for Resa

47、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95813 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/

48、 -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Leakage current into the -IS(OFF)VS = -14 V, VD = +14 V 1 01, 02, -2 +2 nA source terminal of an S1/S2/S3/S4 2,3 03 -100 +100 “OFF” switch M,D,P,L,R 2/ 1 -100 +100 VS= -14 V, VD= +14 V 3/ 1 04, 06 -10 +10 S1/S2/S3/S4 2,3 -100 +100 M,D,P,L,R,F 2/ 1 -100 +100 VS= -V + 1 V, 3/ 1 05, 07 -10 +10 VD= +V - 1 V, S1/S2/S3/S4 2,3 -100 +100 M,D,P,L,R,F 2/ 1 -100 +100 VS= -14 V, VD= +14 V 1 08 -100 +100 S1/S2/S3/S4 2,3 -150 +150 M,