DLA SMD-5962-95810 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物.pdf

《DLA SMD-5962-95810 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95810 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、- 999b 0323484 bT4 . (xone) X NOTICE OF REVISION (NOR) (1) Existing document supplemented by the NOR may be used in manufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and furnish revised docum

2、ent. THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. I . ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DSCC-VAC Public reporting burden for this collection is estimated to avera e 2 hours er response includin the time for, reviewing instructions, searchina existina

3、data sources, aathenna and main?aininq the add “A“. Revisions description column; add “Changes in accordance with NOR 596243151 -98“. Revisions date column; add “98-07-31“. Revision level block; add “A“. Rev status of sheets; for sheets 1,4, and 16 through 22, add “A. this document.“ Revision level

4、block; add “A. Sheets 16 through 22: Add attached appendix A. Sheet 4 Add new paragraph which states; 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to CONTINUED ON NEXT SHEETS iD Form 1695, APR 92 Previous editions are obsolete. Provided by IHSNot for ResaleNo rep

5、roduction or networking permitted without license from IHS-,-,-APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9581 O I lo. 10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting

6、 the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting

7、 of militaty high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m. The PIN shall be as shown in the following example:

8、Document No: 5962-9581 O Revision: A Sheet: 2 of 8 NOR NO: 5962-Ri 51 -98 59,62 i( 95810 4 J, f T Federal RHA Device Device Die Die Stock class designator type class code Details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) / (see 10.2.3) Drawing Number 10.2.1 RHA desicmator. Device

9、classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. - 10.2.2 Device tvpes). The device type(s) shall identify the circuit function as follows: Device tvpe Generic number Circuit function o1 10.2.3 Device class desianator. Device c

10、lass HCS241 Radiation Hardened, SOS, high speed CMOS, noninverting octal buffer/line driver with three-state outputs. Device reauirements documentation Certification and qualification to the die requirements of MIL-PRF-38535. Il u DEFENSE SUPPLY CENTER COLUMBUS REVISION LEVEL SHEET A 16 COLUMBUS, OH

11、IO 43216-5000 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-b 0323486 477 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95810 SIZE 5962-9

12、581 O A REVISION LEVEL SHEET A 17 Document No: 5962-9581 O Revision: A Sheet: 3 of 8 NOR NO: 596243151-98 10.2.4 Die Details. The die details designation shall be a unique letter which designates the dies physical dimensions, bonding pad location(s) and related electrical function), interface materi

13、als, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die Phvsical dimensions. Die Tvpes Fiaure number O1 A-1 10.2.4.2 Die Bondina pad locations and Electrical functions. Die Tvpes Ficiure number o1 A- I 10.2.4.3 Interface Materials. Die Tvpes

14、Fiaure number o1 A- 1 10.2.4.4 Assemblv related information. o1 A- 1 10.3 Absolute maximum ratinas. See paragraph 1.3 within the body of this drawing for details. 10.4 Recommended operatina conditions. See paragraph 1.4 within the body of this drawing for details. 20. APPLICABLE DOCUMENTS 20.1 Gover

15、nment specifications. standards, bulletin, and handbooks. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of thi

16、s drawing to the extent specified herein. DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-b 0323487 303 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 APPENDIX A APPENDIX A FORMS A PART O

17、F SMD 5962-9581 O SIZE 5962-9581 O A REVISION LEVEL SHEET A 18 Document No: 5962-95810 Revision: A Sheet: 4 of 8 NOR NO: 59624151-98 I I SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Te

18、st Methods and Procedures for Microelectronics. HANDBOOK DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standardized Military Drawings (SMDs). (Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific 20.2 Order of precedence. in the event of

19、 a conflict between the text of this drawing and the references cited herein, the acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). text of this drawing shall take precedence. 30. REQUIREMENTS 30.1 Item Reauirements. The individual it

20、em requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit or function as described herein. specified in MIL-PRF-3

21、8535 and the manufacturers QM plan, for device classes Q and V and herein. 30.2 Desian. construction and phvsical dimensions. The design, construction and physical dimensions shall be as 30.2.1 Die Phvsical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.

22、30.2.2 Die bondina Rad locations and electrical functions. The die bonding pad locations and electrical functions shall be 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1 . 30.2.4 Assemblv related information. The assembly related i

23、nformation shall be as specified in 10.2.4.4 and figure A-1. 30.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document. as specified in 10.2.4.2 and on figure A-1 . Provided by IHSNot for ResaleNo reproduction or networking permitted without license

24、from IHS-,-,-9999996 Ol1234BB 24T STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95810 SIZE 5962-9581 O A REVISION LEVEL SHEET A 19 Document No: 5962-9581 O Revision: A Sheet: 5 of 8 NOR NO: 5962-R151-98 30.3 Ele

25、ctrical Derformance characteristics and Dost-irradiation Darameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. 30.4 Electrical test reauirements. The wafer probe

26、test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. 30.5 Markinq. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer,

27、 shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN listed in 10.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. 30.6 Certification of compliance. For device classes Q and V, a certificate of comp

28、liance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturers product me

29、ets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. 30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. QUA

30、LITY ASSURANCE PROVISIONS 40.1 SamDlina and insDection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QM plan shall not effect the form, fi

31、t or function as described herein. 40.2 Screeninq. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturers QM plan. As a minimum it shall consist of: a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883

32、 TM 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM201 O or the alternate procedures allowed within MIL-STD-883 TM5004. Provided by IHSNot for ResaleNo reproduction or networking permitted withou

33、t license from IHS-,-,-m 9999996 0123489 L8b m STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 43216-5000 DEFENSE SUPPLY CENTER COLUMBUS APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95810 SIZE 5962-9581 O A REVISION LEVEL SHEET A 20 Document No: 5962-9581 O Revision: A Sheet: 6 of 8 NOR NO: 5962-R151

34、-98 40.3 Conformance inspection. 40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall

35、 be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1, 4.4.4.2,4.4.4.3, and 4.4.4.4. 50. DIE CARRIER Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-= 777777b 0323470 9TB o DIE BONDIN

36、G PAD LOCATIONS AND ELECTRICAL FUNCTIONS The following metallization diagram supplies the locations and electrical functions of the bonding pads. The internal , metallization layout and alphanumeric information contained within this diagram may or may not represent the actual circuit defined by this

37、 SMD. APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95810 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 FIGURE A-1 o DIE PHYSICAL DIMENSIONS SIZE 5962-9581 O A REVISION LEVEL SHEET A 21 Die Size: Die Thickness: 2680 x 2740 microns. 21 +/-2 mils. Document No:

38、 5962-9581 O Revision: A Sheet: 7 of 8 NOR NO: 596241 51 -98 NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines R, X (see Figure 1). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9

39、581 O SIZE STANDARD DEFENSE SUPPLY CENTER COLUMBUS MICROCIRCUIT DRAWING A REVISION LEVEL COLUMBUS, OHIO 4321 6-5000 A Document No: 5962-9581 O Revision: A Sheet: 8 of 8 NOR NO: 5962-R151-98 5962-9581 O SHEET 22 o INTERFACE MATERIALS Top Metallization: SiAI ll.OkA+/-1kA Backside Metallization None Gl

40、assivation Type: si02 Thickness 13kA 4- 2.6kA Substrate: Silicon on Sapphire (SOS) o ASSEMBLY RELATED INFORMATION Substrate Potential: Insulator. Special assembly instructions: Bond pad #20 (VCC) first. DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted withou

41、t license from IHS-,-,-= 9999996 0323492 770 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 98-07-31 Approved sources of supply for SMD 5962-9581 O are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QM

42、L-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. Standard V

43、endor Vendor similar number PIN 11 HCS241 HMSR - 1/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 34371 Vendor name and address Harris Semiconductor P.O. Box 883 Melbourne, FL 32902

44、-0883 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-LTR R“-ttt SHEET DATE (YR

45、-MO-DA) APPROVED DESCRIPTION REV I l I SHEET I 15 I I REV STATUS OF SHEETS PMIC NIA STAN DARD MI CROCI RCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA )ESC FORM 193 JUL 94 PREPARED BY Thanh V. Nguyen CHECKED BY Thanh V. Nguyen APP

46、ROVED BY Monica L. Poelking DRAWING APPROVAL DATE 951 0-3 I REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON,OHIO 45444 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NONINVERTING OCTAL MONOLITHIC SILICON BUFFEWLINE DRIVER WITH THREE-STATE OUTPUTS, I 5962-95810 SIZE A SHEET 1 OF

47、15 5962-EO21 -96 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-75810 9999996 0080560 9LT 9 STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DA

48、TON, OHIO 45444 1. SCOPE 1.1 w. This drawing forms a part of a one part - one part nunber docunentation system (see 6.6 herein). Tuo product assurance classes consisting of military high reliability (device classes P and M) and space application (device class V), and a choice of case outlines and le

49、ad finishes are available and are reflected in the Part or Identifying Nuriber (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, fitProvisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devicesIl. When available, a choice of Radiation Hardness Assurance (