DLA SMD-5962-95779 REV B-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL 4-INPUT AND GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体双重4输入硅单片电路线型微电路》.pdf

《DLA SMD-5962-95779 REV B-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL 4-INPUT AND GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体双重4输入硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95779 REV B-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL 4-INPUT AND GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体双重4输入硅单片电路线型微电路》.pdf（22页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Changes in accordance with NOR 5962-R115-98. - THL 98-06-12 Raymond L. MonninB Change limits for I IH and I IL in Table 1. Editorial changes throughout. - CFS 99-04-05 Monica L. PoelkingREVSHEETREV B B B B B B BSHEET 15 16 17 18 19 20 21REV STATUS

2、 REV B B B B B B B B B B B B B BOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BYThanh V. NguyenDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingMICR

3、OCIRCUIT, DIGITAL, RADIATION HARDENED,HIGH SPEED CMOS, DUAL 4-INPUT AND GATE,AND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-09-14MONOLITHIC SILICONAMSC N/A REVISION LEVELBSIZEACAGE CODE67268 5962-95779SHEET 1 OF 21DSCC FORM 2233APR 97 5962 -E 204-99DISTRIBUTION STATEMENT A . Appro

4、ved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95779DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2DSCC FORM 2234APR 971. SCOPE

5、1.1 Scope . This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M),and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a

6、choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.1.2 PIN . The PIN is as shown in the following example:5962 R 95779 01 V X CFederal RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see

7、1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked

8、with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 HCS21 Radiation hardened, SOS, high speedCMOS, dual 4-input AND gate1.2.3 Device class designa

9、tor . The device class designator is a single letter identifying the product assurance level as follows:Device class Device requirements documentationM Vendor self -certification to the requirements for MIL-STD-883 compliant, non-JANclass level B microcircuits in accordance with MIL-PRF-38535, appen

10、dix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleC CDIP2-T14 14 Dual-in-lineX CDFP3-F14 14 Flat pack1.2.5 Lead finish . The lead finish

11、 is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95779DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216

12、-5000 REVISION LEVEL B SHEET 3DSCC FORM 2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CC ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) . -0.5 V dc to V CC + 0.5 V dcDC output voltage range (V OUT ) -0.5 V dc to V CC + 0.5 V dcDC input current, any one input (

13、I IN ) . 10 mADC output current, any one output (I OUT ) . 25 mAStorage temperature range (T STG ) -65 C to +150 CLead temperature (soldering, 10 seconds) +265 CThermal resistance, junction -to -case ( JC ):Case outline C . 24 C/WCase outline X . 30 C/WThermal resistance, junction -to -ambient ( JA

14、):Case outline C . 74 C/WCase outline X . 116 C/WJunction temperature (T J ) . +175 CMaximum package power dissipation at T A = +125 C (P D ): 4 /Case outline C . 0.68 WCase outline X . 0.43 W1.4 Recommended operating conditions . 2 / 3 /Supply voltage range (V CC ) . +4.5 V dc to +5.5 V dcInput vol

15、tage range (V IN ) . +0.0 V dc to V CCOutput voltage range (V OUT ) . +0.0 V dc to V CCMaximum low level input voltage (V IL ) . 30% of V CCMinimum high level input voltage (V IH ) 70% of V CCCase operating temperature range (T C ) . -55 C to +125 CMaximum input rise and fall time at V CC = 4.5 V (t

16、 r , t f ) 100 ns/V1.5 Radiation features :Total dose (dose rate = 50 300 rad( Si)/s):(Device classes M, Q, or V) 2 x 10 5 Rads ( Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4) . 100 MeV/(cm 2 /mg) 5 /Dose rate upset (20 ns pulse) . 1 x 10 10 Rads (Si

17、)/s 5 /Latch-up None 5 /Dose rate survivability 1 x 10 12 Rads (Si)/s 5 /1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / Unless otherwise noted, all voltages are refere

18、nced to GND.3 / The limits for the parameters specified herein shall apply over the full specified V CC range and case temperature range of-55 C to +125 C unless otherwise noted.4 / If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based

19、 on JA ) atthe following rate:Case outline C 13.5 m W/ CCase outline X . 8.6 mW/ C5 / Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95779DEFENSE SUPPLY CENTER COL

20、UMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a part ofthis drawing to the extent specified herein. Unless otherwise specified, the

21、issues of these documents are those listed in the issueof the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATI ONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDA

22、RDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-S TD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microci

23、rcuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a conflict between the text of this dra

24、wing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specificexemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requirements for device classes Q and

25、V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for deviceclass M shall be in a

26、ccordance with MIL-PRF-38535, appendix A, and as specified herein.3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions . The design, construction, and physical dimensions shall be as specified inMIL-PRF-

27、38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connections shall be as specified on figure 1.3.2.3 Truth table . The trut

28、h table shall be as specified on figure 2.3 .2.4 Logic diagram . A representative logic diagram shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specified on figure 4.3.2.6 Irradiation test connections . The irradiati

29、on test connections shall be as specified in table III.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95779DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5DSCC FORM 2234APR 973.3

30、 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, the electricalperformance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operatingtemperature range.3.4 Electrical te

31、st requirements . The electrical test requirements shall be the subgroups specified in table IIA. The electrical testsfor each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be markedas listed in M

32、IL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, themanufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designatorshall still be marked. Marking for device classes Q and V shall

33、 be in accordance with MIL-PRF-38535. Marking for device class Mshall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M sh

34、all be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listedmanufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certifi

35、cate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved source of supply for this drawingshall affirm that the manufacturers pr

36、oduct meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein orfor device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as required for device classes Q and V inMIL-PRF-38535 or for device clas

37、s M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered tothis drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of product (see 6.2 herein)involving devices acquired to this drawing is required for any

38、change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made availableonshore at th

39、e option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be in microcircuitgroup number 36 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST

40、ANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95779DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherwise specifiedDevicetypeV CC Group AsubgroupsLimit

41、s 2 / UnitMin MaxHigh level outputvoltageV OH For all inputs affectingoutput under testV IN = 3.15 V or 1.35 VFor all other inputsAll 4.5 V 1, 2, 3 4.40 VV IN = V CC or GNDI OH = -50 A M, D, P, L, R 3 / All 1 4.40For all inputs affectingoutput under testV IN = 3.85 V or 1.65 VFor all other inputsAll

42、 5.5 V 1, 2, 3 5.40V IN = V CC or GNDI OH = -50 A M, D, P, L, R 3 / All 1 5.40Low level outputvoltageV OL For all inputs affectingoutput under testV IN = 3.15 V or 1.35 VFor all other inputsAll 4.5 V 1, 2, 3 0.1 VV IN = V CC or GNDI OL = 50 A M, D, P, L, R 3 / All 1 0.1For all inputs affectingoutput

43、 under testV IN = 3.85 V or 1.65 VFor all other inputsAll 5.5 V 1, 2, 3 0.1V IN = V CC or GNDI OL = 50 A M, D, P, L, R 3 / All 1 0.1Input current highI IH For input under test, V IN = 5.5 VFor all other inputsV IN = V CC or GNDAll 5.5 V 1 +0.5 A2, 3 +10.0M, D, P, L, R3 /All 1 +5.0Input current lowI

44、IL For input under test, V IN = GNDFor all other inputsV IN = V CC or GNDAll 5.5 V 1 -0.5 A2, 3 -10.0M, D, P, L, R3 /All 1 -5.0See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95779D

45、EFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherwise specifiedDevicetypeV CC Group AsubgroupsLimits 2 / UnitMin MaxOutput current

46、high(Source)I OH For all inputs affecting outputunder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 -4.8 mAFor all other inputs 2, 3 -4.0V IN = V CC or GNDV OUT = 4.1 V M, D, P, L, R 3 / All 1 -4.0Output current low(Sink)I OL For all inputs affecting outputunder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 4.8 m

47、AFor all other inputs 2, 3 4.0V IN = V CC or GNDV OUT = 0.4 V M, D, P, L, R 3 / All 1 4.0Quiescent supplycurrentI CC V IN = V CC or GND All 5.5 V 1 10.0 A2, 3 200.0M, D, P, L, R3 /All 1 200.0Input capacitance C IN V IH = 5.0 V, V IL = 0.0 Vf = 1 MHz, see 4.4.1cAll 5.0 V 4 10.0 pFPower dissipation C

48、PD All 5.0 V 4 39.0 pFcapacitance 4 / 5, 6 44.0Functional test 5 / V IH = 3.15 V, V IL = 1.35 V All 4.5 V 7, 8 L HSee 4.4.1b M, D, P, L, R 3 / All 7 L HPropagation delay t PHL C L = 50 pF All 4.5 V 9 2.0 18.0 nstime, An, Bn, Cn 6 / R L = 500 10, 11 2.0 20.0or Dn to Yn See figure 4 M, D, P, L, R 3 / All 9 2.0 20.0t PLH C L = 50 pF All 4.5 V 9 2.0 20.06 / R L = 500 10, 11 2.0 22.0See figure 4 M, D, P, L, R 3 / All 9 2.0 22.0Output transition t THL , C L = 50 pF All 4.5 V 9 15.0 nstime t TLH7 /R L = 500 See figure 410, 11 22.0See f