DLA SMD-5962-95747 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐.pdf

《DLA SMD-5962-95747 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95747 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐.pdf（26页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Changes IAW NOR 5962-R061-97 - cfs 96-11-21 Monica L. PoelkingB Add device class T criteria. Editorial changes throughout. - jak 98-12-07 Monica L. PoelkingC Correct the Total Dose Rate and update RHA levels. LTG 99-04-28 Monica L. PoelkingREVSHEE

2、TREV B B B B B B B B B B BSHEET 15 16 17 18 19 20 21 22 23 24 25REV STATUS REV C B C B B C C C C B B B B BOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Larry T. GauderDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRA

3、WING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingMICROCIRCUIT, DIGITAL, RADIATION HARDENED,HIGH SPEED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLEAND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-10-13INPUTS, MONOLITHIC SILICONAMSC N/A

4、REVISION LEVELCSIZEACAGE CODE67268 5962-95747SHEET 1 OF 25DSCC FORM 2233APR 97 5962 -E243-99DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWING

5、SIZEA 5962-95747DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M),space application (device class V) and for appro

6、priate satellite and similar applications (device class T). A choice of case outlinesand lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of RadiationHardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user

7、is encouraged to review the manufacturersQuality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.1.2 PIN . The PIN is as shown in the following example:5962 R 95747 01 V X CFederal RHA Device Device Case Lead stock class designator

8、type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / ( see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. Device class

9、 M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 HC

10、TS373 Radiation hardened, SOS, high speed CMOS,octal transparent latch with three-state outputs,TTL compatible inputs1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level as follows:Device class Device requirements documentationM Vendo

11、r self -certification t o the requirements for MIL-STD-883 compliant, non -JANclass level B microcircuits in accordance with MIL-PRF-38535, appendix AQ, V Certification and qualification to MIL-PRF-38535T Certification and qualification to MIL-PRF-38535 with performance as specifiedin the device man

12、ufacturers approved quality management plan.1.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleR CDIP2-T20 20 Dua l-in-lineX CDFP4-F20 20 Flat pack1.2.5 Lead finish . The lead finish is as specifie

13、d in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95747DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISI

14、ON LEVEL C SHEET 3DSCC FORM 2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CC ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) . -0.5 V dc to V CC + 0.5 V dcDC output voltage range (V OUT ) -0.5 V dc to V CC + 0.5 V dcDC input current, any one input (I IN ) . 10

15、mADC output current, any one output (I OUT ) . 25 mAStorage temperature range (T STG ) -65 C to +150 CLead temperature (soldering, 10 seconds) +265 CThermal resistance, junction -to -case ( JC ):Case outline R . 24 C/WCase outline X . 28 C/WThermal resistance, junction -to -ambient ( JA ):Case outli

16、ne R . 72 C/WCase outline X . 107 C/WJunction temperature (T J ) . +175 CMaximum package power dissipation at T A = +125 C (P D ) : 4 /Case outline R . 0.69 WCase outline X . 0.47 W1.4 Recommended operating conditions . 2 / 3 /Supply voltage range (V CC ) . +4.5 V dc to +5 .5 V dcInput voltage range

17、 (V IN ) . +0.0 V dc to V CCOutput voltage range (V OUT ) . +0.0 V dc to V CCMaximum low level input voltage (V IL ) . 0.8 VMinimum high level input voltage (V IH ) V CC /2Case operating temperature range (T C ) . -55 C to +125 CMaximum input rise and fall time at V CC = 4.5 V ( t r , t f ) 500 ns1.

18、5 Radiation features .Maximum total dose available (dose rate = 50 300 rad ( Si)/s)(Device classes M ,Q, or V) . 2 x 10 5 Rads (Si)(Device class T) 1 x 10 5 Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm 2 /mg) 5 /Dose rate upset (20

19、 ns pulse) 1 x 10 10 Rads (Si)/ s 5 /Latch-up None 5 /Dose rate survivability . 1 x 10 12 Rads (Si)/ s 5 /1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / Unless otherwi

20、se noted, all voltages are referenced to GND.3 / The limits for the parameters specified herein shall apply over the full specified V CC range and case temperature range of-55 C to +125 C unless otherwise noted.4 / If device power exceeds pack age dissipation capability, provide heat sinking or dera

21、te linearly (the derating is based on JA ) atthe following rate:Case outline R 13.9 mW/ CCase outline X . 9.3 mW/ C5 / Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 59

22、62-95747DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a part ofthis drawing to the extent specified herein.

23、 Unless otherwise specified, the issues of these documents are those listed in the issueof the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing,

24、General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs

25、).MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a co

26、nflict between the text of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specificexemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item req

27、uirements for device classes Q, T and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requir

28、ements for deviceclass M shall be in accordance with MIL-PRF-38535 , appendix A and as specified herein.3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions . The design, construction, and physical dimen

29、sions shall be as specified inMIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connections shall be as specified

30、 on figure 1.3.2.3 Truth table . The truth table shall be as specified on figure 2.3.2.4 Logic diagram . A representative logic diagram shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specified on figure 4.3.2.6 Irra

31、diation test connections . The irradiation test connections shall be as specified in table III.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95747DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISIO

32、N LEVEL B SHEET 5DSCC FORM 2234APR 973.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, the electricalperformance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case oper

33、atingtemperature range.3.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table IIA. The electrical testsfor each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufactur

34、ers PIN may also be markedas listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, themanufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designatorshall still be marked.

35、Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device classM shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required inMIL-PRF-38

36、535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q, T and V, a certificate of compliance shall be required from a QML -38535listed manufacturer in order to supply to the requirements of this drawing

37、 (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved source of supply for

38、this drawingshall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and hereinor for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as required for devi

39、ce classes Q, T and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered tothis drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of product (see 6.2 herein)involvi

40、ng devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applicable required documentation. Off

41、shore documentation shall be made availableonshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be in microcircuitgroup number 38 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction

42、 or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95747DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .Test Symbol Test conditions 1 /-55 C T C +125 Cunless

43、 otherwise specifiedDevicetypeV CC Group AsubgroupsLimits 2 / UnitMin MaxHigh level outputvoltageV OH For all inputs affectingOutput under testV IN = 2.25 V or 0.8 VFor all other inputsAll 4.5 V 1, 2, 3 4.40 VV IN = V CC or GNDI OH = -50 A M, D, P, L, R 3 / All 1 4.40For all inputs affectingoutput u

44、nder testV IN = 2.75 V or 0.8 VFor all other inputsAll 5.5 V 1, 2, 3 5.40V IN = V CC or GNDI OH = -50 A M, D, P, L, R 3 / All 1 5.40Low level outputvoltageV OL For all inputs affectingoutput under testV IN = 2.25 V or 0.8 VFor all other inputsAll 4.5 V 1, 2, 3 0.1 VV IN = V CC or GNDI OL = 50 A M, D

45、, P, L, R 3 / All 1 0.1For all inputs affectingoutput under testV IN = 2.75 V or 0.8 VFor all other inputsAll 5.5 V 1, 2, 3 0.1V IN = V CC or GNDI OL = 50 A M, D, P, L, R 3 / All 1 0.1Input current highI IH For input under test, V IN = 5.5 VFor all other inputsV IN = V CC or GNDAll 5.5 V 1 +0.5 A2,

46、3 +5.0M, D, P, L, R3 /All 1 +5.0Input current lowI IL For input under test, V IN = GNDFor all other inputsV IN = V CC or GNDAll 5.5 V 1 -0.5 A2, 3 -5.0M, D, P, L, R3 /All 1 -5.0See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

47、-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95747DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherwise specifiedDevicetypeV CC Gro

48、up AsubgroupsLimits 2 / UnitMin MaxOutput current high(Source)I OH For all inputs affecting outputunder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 -7.2 mAFor all other inputs 2, 3 -6.0V IN = V CC or GNDV OUT = 4.1 V M, D, P, L, R 3 / All 1 -6.0Output current low(Sink)I OL For all inputs affecting outputunder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 7.2 mAFor all other inputs 2, 3 6.0V IN = V CC or GNDV OUT = 0.4 V M, D, P, L, R 3 / All 1 6.0Three -state outputleakage currenthighI OZHOE = 5.5 VFor all other inputsAll 5.5 V 1 +1.0