DLA SMD-5962-95652 REV D-2010 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS TRIPLE THREE-INPUT NAND GATE MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R305-97. 97-10-22 Monica L. Poelking B Changes in accordance with NOR 5962-R030-99. 99-02-19 Monica L. Poelking C Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. tmh 00

2、-07-20 Monica L. Poelking D Update radiation features in section 1.5, table IB SEP test limits, and paragraphs 4.4.4.1 4.4.4.4. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 10-03-25 Thomas M. Hess REV SHET REV D D D D D D SHEET 15 16 17 18 19 20 REV STATUS REV D D D

3、 D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTME

4、NT OF DEFENSE CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE THREE- INPUT NAND GATE, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-12-20 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95652 SHEET 1 OF 20 DSCC FORM 2233

5、APR 97 5962-E224-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawi

6、ng documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation H

7、ardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 95652 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) /

8、 Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriat

9、e RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ACS10 Radiation hardened SOS, advanced CMOS, triple three-input NAND gate 02 ACS10-02 1/ Radiation hardened SOS,

10、advanced CMOS, triple three-input NAND gate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-

11、JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14

12、14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Device type -02 is the same as device type -01 except that the device type -02 products are manufactured at an o

13、verseas wafer foundry. Device type -02 is used to positively identify, by marketing part number and by brand of the actual device, material that is supplied by an overseas foundry. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

14、 DRAWING SIZE A 5962-95652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range

15、(VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) . 50 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case outline C . 24C/W Case out

16、line X . 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C . 74C/W Case outline X . 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C . 0.68 W Case outline X . 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply volta

17、ge range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL) 30% of VCCMinimum high level input voltage (VIH) . 70% of VCCCase operating temperature range (TC) . -55C to +125C Maximum input rise an

18、d fall time at VCC= 4.5 V (tr, tf) 10 ns/V 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 3 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 10

19、11Rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all volta

20、ges are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derati

21、ng is based on JA) at the following rate: Case C 13.5 mW/C Case X 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95652 DEFENSE SUPPLY CENTER COLUMB

22、US COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, th

23、e issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface S

24、tandard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Doc

25、ument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable l

26、aws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) p

27、lan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the r

28、equirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device clas

29、s M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as speci

30、fied on figure 3. 3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made a

31、vailable to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM

32、 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range

33、. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be

34、marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be

35、 in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M sha

36、ll be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certifi

37、cate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers

38、product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device

39、class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for

40、 any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshor

41、e at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

42、HS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGrou

43、p A subgroups Limits 2/ UnitMin Max High level output voltage VOHFor all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOH= -50 A All 4.5 V 1, 2, 3 4.40 V M, D, P, L, R, F 3/ All 1 4.40 For all inputs affecting output under test VIN= 3.85 V or 1.65 V Fo

44、r all other inputs VIN= VCCor GND IOH= -50 A All 5.5 V 1, 2, 3 5.40 M, D, P, L, R, F 3/ All 1 5.40 Low level output voltage VOLFor all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOL= +50 A All 4.5 V 1, 2, 3 0.1 V M, D, P, L, R, F 3/ All 1 0.1 For all

45、 inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOL= +50 A All 5.5 V 1, 2, 3 0.1 M, D, P, L, R, F 3/ All 1 0.1 Input current high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 5.5 V1 +0.5 A 2, 3 +1.0 M, D, P, L, R, F 3/ All

46、1 +1.0 Input current low IILFor input under test, VIN= GND For all other inputs VIN= VCCor GND All 5.5 V1 -0.5 A 2, 3 -1.0 M, D, P, L, R, F 3/ All 1 -1.0 Output current high (Source) IOH4/ For all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 4.1 V

47、All 4.5 V1 -12.0 mA 2, 3 -8.0 M, D, P, L, R, F 3/ All 1 -8.0 Output current low (Sink) IOL4/ For all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 0.4 V All 4.5 V1 12.0 mA 2, 3 8.0 M, D, P, L, R, F 3/ All 1 8.0 See footnotes at end of table. Provide

48、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specifiedDevicetype VCCGroup A subgroups Limits 2/ Unit Min Max Quiescent supply current ICCVIN= VCCor GND All 5.5 V 1 5.0 A 2, 3 100.0 M, D, P, L, R, F 3/ All 1 100.0 Input capacitanc