DLA SMD-5962-95651 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT AND GATE MONOLITHIC SILICON《数字反射先进互补金属氧化物半导体 四重2输入与非硅单片电路线型微电路》.pdf

《DLA SMD-5962-95651 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT AND GATE MONOLITHIC SILICON《数字反射先进互补金属氧化物半导体 四重2输入与非硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95651 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT AND GATE MONOLITHIC SILICON《数字反射先进互补金属氧化物半导体 四重2输入与非硅单片电路线型微电路》.pdf（22页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R304-97 97-10-22 Monica L. PoelkingB Changes in accordance with NOR 5962-R060-9999-04-13 Monica L. PoelkingC Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorialchanges throughout. - tmh00-07-17 M

2、onica L. PoelkingREVSHEETREV CCCCCCCSHEET 15 16 17 18 19 20 21REV STATUS REV CCCCCCCCCCCCCCOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Thanh V. NguyenDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALL

3、DEPARTMENTSAPPROVED BYMonica L. PoelkingAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE95-12-29MICROCIRCUIT, DIGITAL, RADIATIONHARDENED ADVANCED CMOS, QUAD 2-INPUTAND GATE, MONOLITHIC SILICONAMSC N/AREVISION LEVELCSIZEACAGE CODE672685962-95651SHEET1 OF 21DSCC FORM 2233APR 97 5962-E369-

4、00DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95651DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET2

5、DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number

6、 (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 F 95651 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal RHA Device Device Case Lead stock class designator ty

7、pe class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA

8、marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 ACS08 Radiat

9、ion hardened SOS, advanced CMOS,quad 2-input AND gate02 ACS08-02 1/ Radiation hardened SOS, advanced CMOS,quad 2-input AND gate1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentatio

10、nM Vendor self-certification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows

11、:Outline letter Descriptive designator Terminals Package styleC CDIP2-T14 14 dual-in-line packageX CDFP3-F14 14 flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.1/ Device type -02 is the same as

12、device type -01 except that the device type -02 products are manufactured at an overseaswafer foundry. Device type -02 is used to positively identify, by marketing part number and by brand of the actual device,material that is supplied by an overseas foundry.Provided by IHSNot for ResaleNo reproduct

13、ion or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95651DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage range (VCC). -0.5 V dc to +7.0 V dcDC input voltage

14、 range (VIN). -0.5 V dc to VCC + 0.5 V dcDC output voltage range (VOUT) -0.5 V dc to VCC + 0.5 V dcDC input current, any one input (IIN) . 10 mADC output current, any one output (IOUT) 50 mAStorage temperature range (TSTG) -65C to +150CLead temperature (soldering, 10 seconds). +265CThermal resistanc

15、e, junction-to-case (JC):Case outline C 24C/WCase outline X 30C/WThermal resistance, junction-to-ambient (JA):Case outline C 74C/WCase outline X 116C/WJunction temperature (TJ) . +175CMaximum package power dissipation at TA = +125C (PD): 4/Case outline C 0.68 WCase outline X 0.43 W1.4 Recommended op

16、erating conditions. 2/ 3/Supply voltage range (VCC). +4.5 V dc to +5.5 V dcInput voltage range (VIN). +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL). 30% of VCCMinimum high level input voltage (VIH) 70% of VCCCase operating temperature range (TC)

17、-55C to +125CMaximum input rise and fall time at VCC = 4.5 V (tr, tf) 10 ns/VRadiation features:Total dose 3 x 105Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/Dose rate upset (20 ns pulse) . 1 x 1011Rads (Si)/s 5/Latch-up No

18、ne 5/Dose rate survivability . 1 x 1012Rads (Si)/s 5/2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documen

19、ts are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.1/ Stresses above the absolute

20、maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to GND.3/ The limits for the parameters specified herein shall apply over the full specified VCC

21、range and case temperature range of -55C to +125C unless otherwise noted.4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating isbased on JA) at the following rate:Case C 13.5 mW/CCase X 8.6 mW/C5/ Guaranteed by design or process but not tes

22、ted.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95651DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET4DSCC FORM 2234APR 97STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Sta

23、ndard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of

24、the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this d

25、rawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specif

26、ied herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN cla

27、ss level B devices and as specifiedherein.3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for devic

28、e classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Truth table. The truth table shall be as specified

29、 on figure 2.3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation test connections shall be as specified in tabl

30、e III herein.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the fullcase operating temperature range.3.

31、4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as

32、 listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q

33、 and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for devic

34、e class M shall be a “C“ as required in MIL-PRF-38535, appendix A.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95651DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET5DSCC FORM 2234APR

35、 973.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufactu

36、rer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirem

37、ents of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided wit

38、h each lot of microcircuits deliveredto this drawing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and re

39、view for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignme

40、nt for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 36 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-

41、38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. Fo

42、r device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices

43、 prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revisionlevel control and shall be made available to the preparin

44、g or acquiring activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA = +125C, minimum.b. Interim and final electrical test parameters shall be as specified in table IIA

45、 herein.4.2.2 Additional criteria for device classes Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocume

46、nt revision level control of the device manufacturers Technology Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in acc

47、ordance with the intent specified in testmethod 1015 of MIL-STD-883.b. Interim and final electrical test parameters shall be as specified in table IIA herein.c. Additional screening for device class V beyond the requirements of device class Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qua

48、lification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein forgroups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).Provided

49、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95651DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.Limits 2/Test Symbol Test conditions 1/-55C