DLA SMD-5962-95636 REV B-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON《数字反射先进互补金属氧化物半导体 四重2输入与非晶体管兼容输入硅.pdf

《DLA SMD-5962-95636 REV B-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON《数字反射先进互补金属氧化物半导体 四重2输入与非晶体管兼容输入硅.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95636 REV B-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON《数字反射先进互补金属氧化物半导体 四重2输入与非晶体管兼容输入硅.pdf（28页珍藏版）》请在麦多课文档分享上搜索。

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)98-10-16Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngton Headquarters Services, Directoratefor Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to theOffice of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad S

5、treetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R006-99a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUMENT NO.5962-956369. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS,QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC10. REVISION LE

6、TTER11. ECP NO.No users listed.SILICONa. CURRENTAb. NEWB12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “B“.Revisions description column; add “Changes in accordance with NOR 5962-R006-99“.Revisions date column; add “98-10-16“.Re

7、vision level block; change from “A” to “B“.Rev status of sheets; for sheet 1 change from “A” to “B” , for sheets 3, 4 and 16 through 22, add “B“.Sheet 3: 1.3 Absolute maximum ratings, Supply voltage range (Vcc); change limits from “-0.5 V dc to +6.0 V dc , to “-0.5 V dc to +7.0 V dc”.Sheet 4: Add ne

8、w paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “B“.Sheets 16 through 22: Add attached appendix A.CONTINUED ON NEXT SHEETS14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document

9、supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC-VASc. TYPED NAME

10、 (First, Middle Initial, Last)RAYMOND L. MONNINd. TITLECHIEF, MICROELECTRONICS TEAMe. SIGNATURERAYMOND L. MONNINf. DATE SIGNED(YYMMDD)98-10-1615a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VASb. REVISION COMPLETED (Signature)TIN H. LEc. DATE SIGNED(YYMMDD)98-10-16DD Form 1695, APR 92 Previous editions are

11、 obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95636DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET16DSCC FORM 2234APR 97Document No: 5962-95636Revision: BAPPENDIX A NOR No:

12、 5962-R006-99APPENDIX A FORMS A PART OF SMD 5962-95636 Sheet: 2 of 8 10. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the man

13、ufacturersapproved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devicesusing chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classesconsisting of military high reliability (device class Q) an

14、d space application (device Class V) are reflected in the Part orIdentification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.10.2 PIN. The PIN shall be as shown in the following example:5962 F 95636 01 V 9 AFederal RHA Device Device Die

15、 DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3) Drawing Number 10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Devic

16、e type(s). The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 ACTS00 Radiation hardened, SOS,advanced CMOS, quad 2-inputNAND gate, TTL compatibleinputs.02 ACTS00-02 Radiation hardened, SOS,advanced CMOS, quad 2-inputNAND gate, TTL compatib

17、leinputs.10.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA596

18、2-95636DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET17DSCC FORM 2234APR 97Document No: 5962-95636Revision: BAPPENDIX A NOR No: 5962-R006-99APPENDIX A FORMS A PART OF SMD 5962-95636 Sheet: 3 of 8 10.2.4 Die Details. The die details designation shall be a unique letter wh

19、ich designates the dies physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for eachproduct and variant supplied to this appendix.10.2.4.1 Die Physical dimensions.Die Types Figure number01, 02 A-110.2.4.2 Die Bo

20、nding pad locations and Electrical functions.Die Types Figure number01, 02 A-110.2.4.3 Interface Materials.Die Types Figure number01, 02 A-110.2.4.4 Assembly related information.Die Types Figure number01, 02 A-110.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for deta

21、ils.10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the followingspecifications, standards, bulletin, and handbook of the issue

22、 listed in that issue of the Department of Defense Index ofSpecifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRA

23、WINGSIZEA5962-95636DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET18DSCC FORM 2234APR 97Document No: 5962-95636Revision: BAPPENDIX A NOR No: 5962-R006-99APPENDIX A FORMS A PART OF SMD 5962-95636 Sheet: 4 of 8 SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Ci

24、rcuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.HANDBOOKDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings.(Copies of the specification, standards, bulletin, and handbook required by manufacturers

25、 in connection with specificacquisition functions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, thetext of this drawing shall take pre

26、cedence.30. REQUIREMENTS30.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not effect the fo

27、rm, fit or function as described herein.30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be asspecified in MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical dimensions. The die physical dime

28、nsions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall beas specified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials. The interface materials for the die shall be as

29、specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document.30.2.6 Radiation exposure circuit

30、. The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body ofthis document.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95636DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000

31、REVISION LEVELBSHEET19DSCC FORM 2234APR 97Document No: 5962-95636Revision: BAPPENDIX A NOR No: 5962-R006-99APPENDIX A FORMS A PART OF SMD 5962-95636 Sheet: 5 of 8 30.3 Electrical performance characteristics and post- irradiation parameter limits. Unless otherwise specified herein, theelectrical perf

32、ormance characteristics and post-irradiation parameter limits are as specified in table I of the body of thisdocument.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testingsufficient to make the packaged die capable of meeting the electri

33、cal performance requirements in table I.30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to acustomer, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PINlisted in 10.2 her

34、ein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). T

35、he certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.30.7 Certificate of conformance. A certifica

36、te of conformance as required for device classes Q and V in MIL-PRF-38535shall be provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be inaccordanc

37、e with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. Themodifications in the QM plan shall not effect the form, fit or function as described herein.40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined

38、 in themanufacturers QM plan. As a minimum it shall consist of:a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-

39、883 TM2010or the alternate procedures allowed within MIL-STD-883 TM5004.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95636DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET20DSCC FORM

40、2234APR 97Document No: 5962-95636Revision: BAPPENDIX A NOR No: 5962-R006-99APPENDIX A FORMS A PART OF SMD 5962-95636 Sheet: 6 of 8 40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see30.5 herein). RHA

41、 levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs4.4.4.1, 4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4.50. DIE CARRIER50.1 Die c

42、arrier requirements. The requirements for the die carrier shall be in accordance with the manufacturers QM planor as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanicaland electrostatic protection.60. NOTES60.1 Intended use. Microcir

43、cuit die conforming to this drawing are intended for use in microcircuits built in accordance withMIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications andlogistics purposes.60.2 Comments. Comments on this appendix should be directed to DSC

44、C-VA, Columbus, Ohio, 43216-5000 or telephone(614)-692-0674.60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined withMIL-PRF-38535 and MIL-HDBK-1331.60.4 Sources of Supply for device classes Q and V. Sources of supply for device classes Q a

45、nd V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA andhave agreed to this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA

46、5962-95636DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET21DSCC FORM 2234APR 97Document No: 5962-95636Revision: BAPPENDIX A NOR No: 5962-R006-99APPENDIX A FORMS A PART OF SMD 5962-95636 Sheet: 7 of 8 FIGURE A-1o DIE PHYSICAL DIMENSIONSDie Size: 2240 x 2240 microns.Die Thi

47、ckness: 21 +/- 2 mils.G01 DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONSThe following metallization diagram supplies the locations and electrical functions of the bonding pads. The internalmetallization layout and alphanumeric information contained within this diagram may or may not represent th

48、e actual circuitdefined by this SMD.NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines C, X (see Figure 1).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95636DEFENSE SUPPLY CENTER COLUMBUSC

49、OLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET22DSCC FORM 2234APR 97Document No: 5962-95636Revision: BAPPENDIX A NOR No: 5962-R006-99APPENDIX A FORMS A PART OF SMD 5962-95636 Sheet: 8 of 8 o INTERFACE MATERIALSDevice 01Metal 1: AlSiCu 7.5kA +/- 0.75kAMetal 2 (Top): AlSiCu 10.0kA +/- 1.0kADevice 02Metal 1: AlSi 7.0kA