DLA SMD-5962-95631 REV H-2013 MICROCIRCUIT LINEAR RADIATION HARDENED QUAD DIFFERENTIAL LINE RECEIVER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add paragraph 3.1.1 and appendix A for microcircuit die. In accordance with N.O.R. 5962-R034-97. 96-11-07 R. MONNIN B Update boilerplate and add device class T device. Redrawn. - ro 98-12-02 R. MONNIN C Make changes to IINL, IIN, -VIC, VHYSTtests

2、 and footnote 5 as specified under table I. - ro 00-04-14 R. MONNIN D Add vendor CAGE F8859. Changed placement of footnote 3/ in paragraph 1.5. Updated footnote 2/ in table I to accommodate RHA designator “P”. Update boilerplate to reflect current requirements. -rrp 02-11-27 R. MONNIN E Add junction

3、 temperature to 1.3. Update drawing to reflect current requirements. rrp 07-01-23 J. RODENBECK F Make change to the “DC diode input current enable pin” limit as specified under 1.3. Add Neutron testing under paragraph 4.4.4. - ro 07-04-12 R. HEBER G Add device type 02. Delete table III and device cl

4、ass M references. Make change to the physical die size under figure A-1. - ro 13-01-31 C. SAFFLE H Add case outline Y. Add note under figure 1. - ro 13-05-02 C. SAFFLE REV SHEET REV H H H H H H H H H SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4

5、5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVE

6、D BY MICHAEL FRYE MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD DIFFERENTIAL LINE RECEIVER, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-06-19 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-95631 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E360-13 Provided by IHSNot for ResaleNo reproduction or

7、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95631 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliabil

8、ity (device class Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assura

9、nce (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F

10、95631 01 V E C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified

11、 RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 26CT32RH Radiation hardened quad differential line receiver 02 26CT

12、32EH Radiation hardened quad differential line receiver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certificati

13、on and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16

14、Dual-in-line X CDFP4-F16 16 Flat pack Y CDFP4-F16 16 Flat pack with grounded lid 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

15、DRAWING SIZE A 5962-95631 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VDD) -0.5 V to +7.0 V Differential input voltage (VIND) . 12 V Common mode voltage range (CMVR) . 12 V Enable pins input voltage -

16、0.5 V to VDD+0.5 V DC drain current (any one output) . 25 mA DC diode input current enable pin . 20 mA Maximum package dissipation (PD) (TA= -55C to +125C): Case E . 0.625 W Cases X and Y . 0.485 W Maximum device power dissipation (PD) (TA= +125C) . 0.319 W 2/ Storage temperature range -65C to +150C

17、 Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +175C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case E . 80C/W Cases X and Y . 103C/W 1.4 Recommended operating conditions. Supply voltage range (VDD) +4.5 V to +5

18、.5 V Common mode voltage range (CMVR) . 7.0 V Low input voltage (VIL) 0 V to 0.8 V, maximum High input voltage (VIH) . VDDto VDD/2 V, minimum Input rise and fall time . 500 ns, maximum 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the m

19、aximum levels may degrade performance and affect reliability. 2/ Maximum device power dissipation is defined as VDDx ICCand must withstand the added PDdue to output current test (IO) at TA= +125C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND

20、ARD MICROCIRCUIT DRAWING SIZE A 5962-95631 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01: Device classes V or Q . 300 krads(Si) 3/ Device class T . 100

21、 krads(Si) 3/ Device type 02 . 300 krads(Si) 4/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 02 50 krads(Si) 4/ Single event phenomena (SEP): No SEL occurs at effective LET (see 4.4.4.6) 100 MeV/mg/cm25/ Neutron irradiation . = 1 x 1014neutrons/cm25/ Dose rate induced upset 5

22、 x 108rads(Si)/sec 5/ Dose rate survivability . = 5 x 1011rads(Si)/sec 5/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the

23、issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Sta

24、ndard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/quicksearch.dla.mil or from the Standardization Document Order Des

25、k, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation

26、or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P

27、.O. Box C700, West Conshohocken, PA, 19428-2959). _ 3/ Device type 01 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for classes V or Q and 100 krads(Si) for dev

28、ice class T. 4/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 5/ Guaranteed by process

29、or design, not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95631 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 2.3 Order of precedence. In the even

30、t of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individ

31、ual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcirc

32、uit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outlines. The case outl

33、ines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the man

34、ufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirr

35、adiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3

36、.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. F

37、or RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535.

38、 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to l

39、isting as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A ce

40、rtificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

41、95631 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max High level output 3/ voltage

42、VOHVDD= 4.5 V, 4/ VDIFF= 1.0 V, IO= -6 mA 1,2,3 01, 02 4.1 V Low level output 3/ voltage VOLVDD= 4.5 V, 4/ VDIFF= -1.0 V, IO= 6 mA 1,2,3 01, ,02 0.4 V Differential input voltage VTHVDD= VIH= 4.5 V, VCM= -7.0 V to +7.0 V 1,2,3 01, 02 -400 +400 mV Enabled high level input voltage VIHVDD= 4.5 V, 5.5 V

43、5/ 1,2,3 01, 02 VDD/ 2.0 V Enabled low level input voltage VILVDD= 4.5 V, 5.5 V 5/ 1,2,3 01, 02 0.8 V Input current high (differential inputs) IINHVDD= 5.5 V, +V = 10 V, -V = 0 V, +V = 0 V, -V = 10 V 1,2,3 01, 02 1.8 mA Input current low (differential inputs) IINLVDD= 5.5 V, +V = -10 V, V = 0 V, +V

44、= 0 V, -V = -10 V 1,2,3 01, 02 -2.7 mA Input leakage enable pins IINVDD= 5.5 V, VIN= 0 V, 5.5 V 1,2,3 01, 02 -1.0 +1.0 A Three-state output leakage current IOZVDD= 5.5 V, VO= VDDor GND 1,2,3 01, 02 -5.0 +5.0 A Standby supply current IDDSBVDD= 5.5 V, VDIFF= 1.0 V, outputs = open 1,2,3 01, 02 25 mA En

45、able clamp voltage -VICAt -1 mA 1,2,3 01, 02 -1.5 V +VICAt 1 mA 1.5 Input hysteresis VHYSTVDD= 4.5 V, VIH= 4.5 V, VIL= 0 V 1,2,3 01, 02 20 6/ 100 mV Input resistance RIN VDD= 5.5 V, VIH= 5.5 V, VIL= 0 V, input under test VIN= 7 V 1,2,3 01, 02 4 20 k See footnotes at end of table. Provided by IHSNot

46、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95631 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Cond

47、itions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Fail safe voltage FSAFEVOUT= logic “1”, 6/ + and - inputs are open 1,2,3 01, 02 4.1 V Input capacitance CINVDD= open, f = 1 MHz, TA= +25C, see 4.4.1d 4 01, 02 12 pF Output capacitance COUTVDD= ope

48、n, f = 1 MHz, TA= +25C, see 4.4.1d 4 01, 02 12 pF Functional testing See 4.4.1b 7,8 01, 02 Propagation delay time 7/ tPLH, tPHLVDD= 4.5 V, VDIFF= 2.5 V 9,10,11 01, 02 6 40 ns Propagation delay time 7/ tPZH, tPZLVDD= 4.5 V, VDIFF= 2.5 V 9,10,11 01, 02 3 18 ns Propagation delay time 7/ tPLZ, tPHZVDD= 4.5 V, VDIFF= 2.5 V 9,10,11 01, 02 6 29 ns Propagation delay time 7/ tTHL, tTLHVDD= 4.5 V, VDIFF= 2.5 V 9,10,11 01 2 12 ns 1/ RHA device type 01 (device classes Q and V) supplied to this drawing will meet all levels M, D, P, L, R and F of irradiation, and device