DLA SMD-5962-95620 REV E-2010 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT TRANSCEIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

《DLA SMD-5962-95620 REV E-2010 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT TRANSCEIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95620 REV E-2010 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT TRANSCEIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf（20页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add RHA data. Editorial changes throughout - jak. 99-04-23 Monica L. Poelking B Make corrections to waveforms. - CFS 00-05-26 Monica L. Poelking C Make corrections to figure 1, terminal connections. Delete and replace references to MIL-STD-973 wi

2、th MIL-PRF-38535. Update title of MIL-STD-1835 - jak. 00-11-29 Thomas M. Hess D Change ground bounce immunity limits in table I. Correct voltage level for the waveform in figure 5. Editorial changes throughout. - jak 03-05-08 Thomas M. Hess E Update test conditions for high level output voltage (VOH

3、) and low level voltage (VOL) in table I. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - jak 10-05-05 Thomas M. Hess REV SHEET REV E E E E SHEET 15 16 17 18 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jo

4、seph A. Kerby DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, ADVA

5、NCED CMOS, 16-BIT TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, DRAWING APPROVAL DATE 95-05-23 MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-95620 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E293-10 Provided by IHSNot for ResaleNo reproduction or networking per

6、mitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2233 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (de

7、vice classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as sho

8、wn in the following example: 5962 R 95620 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices

9、 meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s).

10、The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTQ16245 16-bit transceiver with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance l

11、evel as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). T

12、he case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDFP1-F48 48 Flat pack1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. P

13、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2233 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply volta

14、ge range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input clamp current (IIK): VIN= -0.5 V -20 mA VIN= VCC+ 0.5 V . +20 mA DC output clamp current (IOK): VOUT= -0.5 V . -20 mA VOUT =VCC+ 0.5 V +

15、20 mA DC output current (IOUT) per output pin 50 mA DC VCCor GND current (ICC, IGND) 400 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissi

16、pation (PD) 750 mW 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) +0.0 V dc to VCCMaximum low level input voltage (VIL) . 0.8 V dc Minimum high level input voltage (VIH) . 2.0 V dc Ca

17、se operating temperature range (TC) . -55C to +125C Minimum input edge rate (VINfrom 0.8 V to 2.0 V or from 2.0 V to 0.8 V) (V/t) 125 mV/ns Maximum high level output current (IOH) . -24 mA Maximum low level output current (IOL) . +24 mA 1.5 Radiation features: Maximum total dose available (dose rate

18、 = 50 to 300 rads(Si)/s) (MIL-STD-883, method 1019, condition A, followed by extended room temperature anneal; effective dose rate = 165 mrads(Si)/s). 100 krads (Si) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may d

19、egrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. Provided by IHSNot for ResaleNo reproduction or networ

20、king permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2233 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specificat

21、ion, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitat

22、ion. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBO

23、OKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 1911

24、1-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DoDISS cited in the solicitation. Unless otherwise specifi

25、ed, the issues of documents not listed in the DoDISS are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices.

26、 (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

27、of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535

28、and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A

29、for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2

30、.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5

31、962-95620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2233 APR 97 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Ground bounce load circuit and wavef

32、orms. The ground bounce load circuit and waveforms shall be as specified on figure 4. 3.2.6 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5. 3.2.7 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the ma

33、nufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirr

34、adiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Ma

35、rking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RH

36、A product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for devic

37、e classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed man

38、ufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted

39、 to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate o

40、f conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notifi

41、cation to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the m

42、anufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-P

43、RF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2233 APR 97 TABLE I. Electrical perform

44、ance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +4.5 V VCC +5.5 V Device type and VCCGroup A subgroups Limits 4/ Unitunless otherwise specified device class Min Max High level output voltage VOH For all inputs affecting output under test, VIH= 2.0

45、 V or VIL= 0.8 V All All 4.5 V 1, 2, 3 4.40 V 3006 For all other inputs, VIN= VCCor GND IOH= -50 A All All 5.5 V 1, 2, 3 5.40 For all inputs affecting output under test, VIH= 2.0 V or VIL= 0.8 V For all other inputs, VIN= VCCor GND All All 4.5 V 1 3.86 IOH= -24 mA All All 4.5 V 2, 3 3.70 All All 5.5

46、 V 1 4.86 All All 5.5 V 2, 3 4.70 For all inputs affecting output under test, VIH= 2.0 V or VIL= 0.8 V For all other inputs VIN = VCCor GND IOH= -50 mA 5/ All All 5.5 V 1, 2, 3 3.85 Low level output voltage 3007 VOL For all inputs affecting output under test, VIH= 2.0 V or VIL= 0.8 V For all other i

47、nputs VIN= VCCor GND IOL= 50 A All All 4.5 V 1, 2, 3 0.10 V All All 5.5 V 1, 2, 3 0.10 For all inputs affecting output under test, VIH= 2.0 V or VIL= 0.8 V All All 4.5 V 1 0.36 For all other inputs VIN= VCCor GND All All 4.5 V 2, 3 0.50 IOL= 24 mA All All 5.5 V 1 0.36 All All 5.5 V 2, 3 0.50 For all

48、 inputs affecting output under test, VIH= 2.0 V or VIL= 0.8 V For all other inputs VIN = VCCor GND IOL= 50 mA 5/ All All 5.5 V 1, 2, 3 1.65 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2233 APR 97 Table I. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125