DLA SMD-5962-95604 REV F-2012 MICROCIRCUIT LINEAR DUAL HIGH SPEED LOW POWER FEEDBACK AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case X which is a 16 lead flat pack. Make changes to 1.2.4, 1.3, 3.2.1, 3.2.2, figure 1, slew rate test, and footnote 1 as specified in table I herein. 99-02-10 R. MONNIN B Add Table IIB and delete figure 1. ro 01-03-29 R. MONNIN C Add radiat

2、ion hardened requirements. ro 01-08-07 R. MONNIN D Drawing updated to reflect current requirements. -rrp 05-09-07 R. MONNIN E Add device types 02 and 03. Make change to paragraphs 1.2.2, 1.2.4, 1.3, and 1.5. Make change to Table I and figure 1. Make change to Table IIA, Table IIB, and paragraph 4.4.

3、4.1. Delete paragraphs 4.4.4.1.1 and 4.4.4.2. -rrp 11-11-15 C. SAFFLE F Add paragraph 3.1.1 and appendix A for microcircuit die. - ro 12-04-19 C. SAFFLE REV SHEET REV F F F F F F F SHEET 15 16 17 18 19 20 21 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14

4、PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICRO

5、CIRCUIT, LINEAR, DUAL, HIGH SPEED, LOW POWER, FEEDBACK AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-08-01 AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-95604 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E145-12 Provided by IHSNot for ResaleNo reproduction or networking permitted withou

6、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95604 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)

7、and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following ex

8、ample: 5962 F 95604 01 V P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-3853

9、5 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) ide

10、ntify the circuit function as follows: Device type 1/ Generic number Circuit function 01 LM6172 Dual, high speed, low power, voltage feedback amplifier 02 LM6172 Radiation hardened, dual, high speed, low power, voltage feedback amplifier 03 LM6172 Radiation hardened, dual, high speed, low power, vol

11、tage feedback amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B mi

12、crocircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in

13、-line X 1/ GDFP1-G16 16 Flat pack with gull wing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ For case outline X, package material for device types 01 is aluminum nitride and package materia

14、l for device types 02 and 03 is aluminum oxide. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95604 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolut

15、e maximum ratings. 2/ Supply voltage (VS) . 36 V Differential input voltage . 10 V 3/ Output short circuit to ground Continuous 4/ Power dissipation (PD) 1.03 W Storage temperature range . -65C to +150C Junction temperature (TJ) . +150C Lead temperature (soldering, 5 seconds) . +260C Thermal resista

16、nce, junction-to-case (JC): Case P . 2C/W Case X (Device type 01) . 6C/W 1/ Case X (Device types 02 and 03) 7C/W 1/ Thermal resistance, junction-to-ambient (JA): Case P . 100C/W still air 46C/W 500 LFPM air flow Case X (Device type 01) 124C/W still air 74C/W 500 LFPM air flow 1/ Case X (Device type

17、02 and 03) 135C/W still air 85C/W 500 LFPM air flow 1/ 1.4 Recommended operating conditions. Supply voltage (VS) . 5.5 V to 36 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads(Si)/s) : Device types 01 and 02 3

18、00 krads(Si) Maximum total dose available (dose rate = .010 rad(Si)/s): Device type 03 . 100 krads(Si) _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Differential in

19、put voltage is measured at VS= 15V. 4/ Continuous short circuit operation can result in exceeding the maximum allowed junction temperature of +150C. 5/ For device types 01 and 02, these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiat

20、ion end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL- STD-883, method 1019, condition A. For device type 03, this part has been tested and does not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guara

21、nteed for the conditions specified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95604 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC

22、 FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicit

23、ation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF

24、DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philade

25、lphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been o

26、btained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the for

27、m, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this docum

28、ent. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accord

29、ance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing

30、and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient o

31、perating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

32、-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95604 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking

33、 of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.

34、 Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF

35、-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be requir

36、ed from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, fo

37、r device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PR

38、F-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required fo

39、r any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documenta

40、tion shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networki

41、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95604 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise spe

42、cified Group A subgroups Device type Limits Unit Min Max +5 V section. Input offset voltage VIO1 01,02 1 mV 2,3 3 M,D,P,L,R,F 1 1 M,D,P,L,R 1 03 1 Input bias current IIB1 01,02 2.5 A 2,3 3.5 M,D,P,L,R,F 1 2.5 M,D,P,L,R 1 03 2.5 Input offset current IIO1 01,02 1.5 A 2,3 2.2 M,D,P,L,R,F 1 1.5 M,D,P,L,

43、R 1 03 1.5 Common mode rejection ratio CMRR VCM= 2.5 V 1 01,02 70 dB 2,3 65 M,D,P,L,R,F 1 70 M,D,P,L,R 1 03 70 Power supply rejection ratio PSRR VS = 15 V to 5 V 1 01,02 75 dB 2,3 70 M,D,P,L,R,F 1 75 M,D,P,L,R 1 03 75 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or net

44、working permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95604 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unles

45、s otherwise specified Group A subgroups Device type Limits Unit Min Max +5 V section continued. Large signal voltage gain AVRL = 1 k, 4/ 1 01,02 70 dB VOUT= 1 V 2,3 65 M,D,P,L,R,F 1 70 M,D,P,L,R 1 03 70 RL = 100 , 4/ 1 01,02 65 VOUT= 1 V 2,3 60 M,D,P,L,R,F 1 65 M,D,P,L,R 1 03 65 Output voltage swing

46、 VORL = 1 k 1 01,02 3.1 -3.1 V 2,3 3 -3 M,D,P,L,R,F 1 3.1 -3.1 M,D,P,L,R 1 03 3.1 -3.1 RL = 100 1 01,02 2.5 -2.4 2,3 2.4 -2.3 M,D,P,L,R,F 1 2.5 -2.4 M,D,P,L,R 1 03 2.5 -2.4 Output current (open loop) IOUTLSourcing, RL = 100 5/ 1 01,02 25 mA 2,3 24 M,D,P,L,R,F 1 25 M,D,P,L,R 1 03 25 Sinking, RL = 100

47、 5/ 1 01,02 -24 2,3 -23 M,D,P,L,R,F 1 -24 M,D,P,L,R 1 03 -24 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95604 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL

48、 F SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max +5 V section continued. Supply current IS Both amplifiers 1 01,02 6 mA 2,3 7 M,D,P,L,R,F 1 6 M,D,P,L,R 1 03 6 +15 V section. Input offset voltage VIO1 01,02 1.5 mV 2,3 3.5 M,D,P,L,R,F 1 1.5 M,D,P,L,R 1 03 1.5 Input bias current IIB1 01,02 3 A 2,3 4 M