DLA SMD-5962-93255 REV A-2002 MICROCIRCUIT LINEAR CMOS QUAD SPST ANALOG SWITCH MONOLITHIC SILICON《硅单片 四重单刀单投模拟开关 氧化物半导体线性微型电路》.pdf
《DLA SMD-5962-93255 REV A-2002 MICROCIRCUIT LINEAR CMOS QUAD SPST ANALOG SWITCH MONOLITHIC SILICON《硅单片 四重单刀单投模拟开关 氧化物半导体线性微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-93255 REV A-2002 MICROCIRCUIT LINEAR CMOS QUAD SPST ANALOG SWITCH MONOLITHIC SILICON《硅单片 四重单刀单投模拟开关 氧化物半导体线性微型电路》.pdf(14页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to reflect current requirements. Editorial changes throughout. drw 02-10-29 Raymond Monnin REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Sandra Rooney DEFENSE
2、SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Sandra Rooney COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, CMOS QUAD, SPST ANALOG SWITCH, MONOLITHIC SILICON AND AGENCIES OF THE DEPAR
3、TMENT OF DEFENSE DRAWING APPROVAL DATE 94-02-09 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-93255 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E019-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking per
4、mitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93255 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (de
5、vice classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as sh
6、own in the following example: 5962 - 93255 01 M E A Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices
7、meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The
8、 device types identify the circuit function as follows: Device type Generic number Circuit function Switch action 01 DG611 CMOS, quad, SPST analog switch (See figures 2, 3) 02 DG612 CMOS, quad, SPST analog switch (See figures 2, 3) 03 DG613 CMOS, quad, SPST analog switch (See figures 2, 3) 1.2.3 Dev
9、ice class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MI
10、L-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadle
11、ss chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-
12、93255 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ V+ to V- -0.3 V dc to 21 V dc V+ to GND -0.3 V dc to 21 V dc V- to GND. -19 V dc to 0.3 V dc VLto GND. -1 V dc to (V+) + 1V dc or 20 mA, . whichever comes fi
13、rst VIN. (V-) -1 V dc to (V+) + 1V dc or 20 mA . whichever comes first Digital inputs, VS, VD. (V-) -0.3 V dc to (V+) + 16V dc or 20 mA . whichever comes first Continuous current (any terminal) 30 mA Current, S or D (pulsed at 1.0 s, 10% duty cycle) . 100 mA Storage temperature range -65C to +150C L
14、ead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +175C Power dissipation at TA= +75C (PD): Case E 900 mW 2/ Case 2. 750 mW 2/ Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case E 85C/W Case 2. 100C/W 1.4 Recommended op
15、erating conditions. Ambient operating temperature range (TA) -55C to +125C Logic supply voltage (VL) 5.25 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified her
16、ein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufac
17、turing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Mi
18、crocircuit Drawings. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate above TA= +75C at 12 mW/C for case outline E. Derate above TA= +75C at 10 mW/C for case outl
19、ine 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93255 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 (Unless otherwise indicated, copies of the
20、specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this dr
21、awing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as spe
22、cified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JA
23、N class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case ou
24、tlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter l
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