DLA SMD-5962-92104-1993 MICROCIRCUIT DIGITAL CMOS ADDRESS PROCESSOR 1 MONOLITHIC SILICON《硅单块 地址处理器1 互补金属氧化物半导体 主储存器微型电路》.pdf

《DLA SMD-5962-92104-1993 MICROCIRCUIT DIGITAL CMOS ADDRESS PROCESSOR 1 MONOLITHIC SILICON《硅单块 地址处理器1 互补金属氧化物半导体 主储存器微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-92104-1993 MICROCIRCUIT DIGITAL CMOS ADDRESS PROCESSOR 1 MONOLITHIC SILICON《硅单块 地址处理器1 互补金属氧化物半导体 主储存器微型电路》.pdf（44页珍藏版）》请在麦多课文档分享上搜索。

1、o SMD-59b2-72104 b 0035932 84b .- 93-02-02 REVISION LEVEL REV I I l SIZE 5962-92104 A SHEET 35 36 37 I I I REV I I I SHEET REV STATUS OF SHEETS PMIC NIA STAIDARDIIED IIILITARY DIUWIPG THIS DRAUING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA iSC FORM 193

2、 JUL 41 PREPARED BY I DEFENSE ELECTRONICS SUPPLY CENTER Phu H Nguycn DAYTON, OHIO 45444 CHECKED BY Tim H Noh I MICROCIRCUIT DIGITAL, CMOS, MONOLITHIC SILICON kPPROVED BY ADDRESS PROCSSOR 1, DRAUING APPROVAL DATE 1 OF 43 5%2-E611-92 DISTRIBUTION STATEMENT A. Approved for public release; distribution

3、is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-stock class designator type designator (see 1.2.1) (see 1.2.2) des i gnator (see 1.2.4) (see 1.2.5) 1 / (see 1.2.3) I/ I assurance level as follows: 1.2.3 Device class dcsimtor. The device

4、 class designstor shall be a single letter identifying the product STAMDARDIZED SIZE MILITARY DUWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL Device class Device reguirmnts documentation I 5962-92104 SHEXT 2 I n Vendor self-certification to the requirements for non-JAN c

5、lass B microcircuits in accordance with 1.2.1 of HIL-STD-883 B or S Q or V Certification and qualification to MIL-M-38510 Certification and qualification to MIL-1-38535 1.2.4 Case outline($). The case outline(s) shall be as designated in NIL-STD-1835 and as follows: Outline letter Descriptive desian

6、stor Terminals Package style 2 See figure 1 220 Ceramic, unformed-leaed, chip carrier 1.2.5 Lead finish. The lead finish shall be as specified in MIL-ti-38510 for classes M, B, and S or MIL-1-38535 for classes P and V. Finish letter XH shall not be marked on the microcircuit or its packaging. The X“

7、 designation is I for use in specifications when lead finishes A, 8, and C are considered acceptable and interchangeable without preference. DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SUD-5962-92204 W 9999996 0035934 hL9 =

8、STADARDIZED MILITARY DRAWING DEFEWSE ELECTRONICS SPPLY CEMTER 1.3 Absolute maximin ratinqs. I! Supply voltage range (V ) . DC input voltage range !I,), DC output voltage range V . Output voltage applied to*HTgh 2 state Maximum power dissipation fora a part of this document to the extent specified he

9、rein. Unless otherwise specified, the issue of the documents which are DoD adopted are those listed in the issue of the DODISS cited in the solicitation. Unless otherwise Specified, the issues of documents not liated in the DODISS are the issues of the documents cited in the solicitation. ELECTRONIC

10、S INDUSTRIES ASSOCIATION CEIA) JEDEC Standard No 17 - A Standard Test Procedure for the characterization of LATCH-UP in CMOS Integrated ci rcuitr. (Appllicationr for copies should be addressed to the Electronic Industries Association, Mo1 Pensylvania Avenue, N.U., Uashington, DC Mow-1813.) IEM VLSI

11、SYSTEMS, FSD, MANASSAS,VA PP525-875 - Engineering and Manufacturing Test Specification. (Applications for copies should be ciddrerses to the Internal Business Machine Corporation, Federal Sector Division, 9500 Godwin Drive, Manassa, VA 22110.) AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTI S

12、tandard F1192-88 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies should be addressed to the American Society for Testing and Materials, 1916 Race Street, Philadelphia, PA 19103-1187) 2.2 Order of precedence.

13、 herein, the text of this drawing shall take precedence. In the event of a conflict between the text of this drauing and the references cited 3. REQUIREMENTS 3.1 The individual item requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-8

14、83 in conjunction with compliant non-JAN devices“ and as specified herein. The individual item requirements for device classes B and S shall be in accordance with MIL-M-38510 and as specified herein. included in this SMD. HIL-2-38535, the device manufacturers Quality HaMgeimnt (QH) plan, and as spec

15、ified herein. specified in MIL-M-38510 for device classes M, 8, and S and MIL-1-38535 for device classes Q and V and herein. Item rcquiremnts. For device classes B and S, a full electrical characterization table for each device type shall be The individual item rquirements for device classes Q and Y

16、 shall be in accordance with 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure I. 3.2.2 Terminal connections. 3.2.3 Block diagram. 3.2.4 Test circui

17、t and switching wavefords). 3.2.5 Radiation exwsure circuit. 3.3 Electrical performance Characteristics and postirradiation parameter limits. The terminal connections shall be as specified on figure 2. The block diagram shall be as specified on figure 3. The test circuit and switching wavcform(s) sh

18、all be as specified on figure 4. The radiation exposure circuit shall be as specified on figure 5. Unless otharwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature

19、range. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in tables IA and IB. 3.4 Electrical test requirements. DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

20、rom IHS-,-,-SflD-5762-92L04 = 9999996 0035916 491 STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 3.5 Harking. The part shall be marked uith the PIN listed in 1.2 herein. Harking for device class H shall be in accordance with MIL-STD-883 (see 3.1 herein). MIL-BUL-1

21、03. P and V shall be in accordance with HIL-1-38535. In addition, the manufacturers PIN may also be marked as listed in Marking for device classes B and S shall be in accordance with MIL-M-38510. Marking for device classes 3.5.1 Certification/compliance mark. The compliance mark for device class H s

22、hall be a “C“ as rquired in MIL-STD-883 (see 3.1 herein). in MIL-M-38510. The certification mark for device classes E and S shall be a “J“ or “JAN“ as required The certification mark for device classes Q and V shall be a “QHL“ as required in MIL-1-38535. 3.6 Certificate of compliance. For device cla

23、ss M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-WL-103 (see 6.7.3 herein). classes Q and V, a certificate of compliance shall be required from a QHL-38535 listed manufacturer in order to supply to the requirements o

24、f this drawing (see 6.7.2 herein). The certificate of compliance submitted to DESC-EC prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Q and

25、 V, the requirements of MIL-1-38535 and the requirements herein. A certificate of conformance as rquired for device class H in MIL-STD-883 (see 3.1 herein) or device classes E and S in MIL-H-38510 or for device classes Q and V in MIL-1-38535 shall be provided uith each lot of microcircuits delivered

26、 to this drawing. For device 3.7 Certificate of conformance. SIZE 5962-92104 A REVISION LEVEL SHEET 5 3.8 Notification of chanse for device class H. For device class H, notification to DESC-EC of change of product (see 6.2 herein) involving devices acquired to this drawing is rquired for any change

27、as defined in MIL-STD-480. 3.9 Verification ancl review for device class H. For device class H, DESC, DESCs agent, and the acquiring activity retain the option to review the nanufacturers facility and applicable rquired documentation. Offshore documentation shall be de available onshore at the optio

28、n of the reviewer. 3.10 Microcircuit group assignment for device classes M, B. and S. Device classes H, 8, and S devices covered by this drawing shall be in microcircuit grwp number 105 (see MIL-M-38510, appendix E). 3.11 Serialization for device class S. All device class S devices shall be serializ

29、ed in accordance with HIL-M-38510. 4. QUALITY ASSURANCE PROVISIONS 4.1 Samlinq and inspection. For device class H, sampling and inspection procedures shall be in accordance with section 4 of MIL-H-38510 to the extent specified in MIL-STD-883 (see 3.1 herein). sampling and inspection procedures shall

30、 be in accordance with MIL-H-38510 and method 5005 of HLL-STD-883, except as modified herein. MIL-1-38535 and the device manufacturers Qii plan. conducted on all devices prior to quality conformance inspection. For device classes B and S, screening shall be in accordance with method 5004 of MIL-STD-

31、883, and shall be conducted on all devices prior to qualification and quality conformance inspection. For device classes Q and V, screening shall be in accordance with NIL-1-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device classes

32、B and S, For device classes Q and V, sampling and inspection procedures shall be in accordance with 4.2 Screening. For device class H, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be 4.2.1 Additional criteria for device classes H, 0, and S. a. Burn-in test, method 1015

33、 of MIL-STD-883. (1) Test condition A, 8, C, D or E. manufacturer under document revision level control and shall be We available to the preparing or acquiring activity upon rquest. qualifying activity. biases, and power dissipation, as applicable, in accordance with the intent specified in test met

34、hod 1015. For device class H, the test circuit shall be mintained by the For device classes B and S, the test circuit shall be submitted to the For device classes H, 8, and S, the test circuit shall specify the inputs, outputs, (2) T = +125OC, minimum. A b. Interim and final electrical test paramete

35、rs shall be as specified in table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-92l104 9999996 0035937 328 TABLE IA. Electri ml rnrf orIIMice characteri st i cs. Test High level (TTL) output voltage High level (CMOS) output volt

36、age Low Level (TTL) output voltage Lou level (CIIOS) output voltage - - - High level (TTL) input voltage High level (CHS) input voltage Low level (TTL) input voltage - 4/ - Devi c type Al 1 Al 1 - - Al 1 AL 1 - - Al L All - ALL All - - All All - - All All - 7 All All - - Limits - win See footnotes a

37、t end of table. STANDARDIZED SIZE 5962-92104 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER I I REVISION LEVEL I SHEET DAPTOE3, OHIO 45444 I I 1 6 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-57b2-72L04 b 0035918 26

38、4 STANDARDIZED MILI TARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TABLE IA. Electrical performance characteristics - Continued. SIZE 5962-92104 A REVISION LEVEL SHEET Test Lou level (CHOS) input voltage High level input current Low level input current High level input current (So

39、ft pull-up) - 5/ Lou level input current (soft pull-up) - 5/ High impedance output leakage current Low impedance output leakage current See footnotes at end of table. I I I I 7 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD

40、-5962-721104 9999996 00359119 LTO STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TABLE IA. Electrical ricrformnce chmractaristics - Continued. SIZE 5962-92104 A REVISION LEVEL SHEET 8 Standby supply current (TTL Level I/O) IDDI Functional tests (LSSD testing) g/ C

41、onditions Group A Unit -55OC 5 T 5 +12S0C Device Limits unless othcrwP8e specified- i hax 4.5 v s 5.5 v I/ subgroups type 1, 2, 3 All 1.4 niA VDD = 5.5 v, f = 0.0 Mz III) R ” - (All other inputs = VIL or D 1 ALL - H - 31 21 10 pF 4 ALL = 0.0 V, = +25 OC (See 4.4.1) f = 1.0 MHz, 4 AL1 10 = 0.0 v, f =

42、 1.0 “2, = +25 OC (See 4.4.1) See footnotes at md of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-92104 m 993999b 0035920 912 m TABLE IA. Electrical performance characteristics - Continued. Conditions Test Symbo 1 Group A Device Li

43、mits Unit C 5.5 V I/ gf subgroups type Local processor system bus Transfer acknowledge setup delay Transfer acknowledge hold delay qeriory corand setup de lay leaory cfmmand hold delay iecnory conuand enable delay leinory couand output delay HCOD - - All All - - AL1 All - - ALL All - - Al 1 All - -

44、All All - - All All - - 16.1 - 3/ 2.1 Y 4.7 - 3/ 5.3 I/ 28.0 - 3/ 25.4 - 3f - ns - ns - ns ns - ns - ns - See footnotes at end of table. STANDARDIZED SIZE 5962-92104 A EIILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CEmR DAYTON, OHIO 45444 REVISION LEVEL SHEET 9 DESC FORM 193A JUL 91 Provided by IHSNot

45、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-92L04 W b 0035923 859 W STANDARIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TLLBLE IA. Electrical performance characteristics - Continued. SIZE 5962-92104 A REVISION LEVEL SHEET 10

46、Tat I)clory corand parity enable S Xehse specifid -55C S TC -i +12SC All ALL - - ALI ALL - All Al 1 - Limits _I Uni 1 7 ns - ns - ns - ns Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-72104 = b O035930 BbL TABLE IA. Electrical performance

47、characteristics - Continued. Conditions unless otherb?se specified I Test s-1 -55OC C TC I +12SoC Group A Device Limits Unit 4.5 V 5 V 5 5.5 V I/ a/ subgroups type Instruction bus IBUS data enable delay IWS data output delay BUS parity enable delay WS parity output delay )perad queue ilement select

48、enable delay :lement select output delay See footnotes at end 9, IO, 11 9 t $m :*s V M - D R H CIN= 50bF Or IH See figure 4 L - _I 2/ - 9,10,11 9 t M - D R H c_ _I 2/ table. All ALL AL 1 All All Al 1 All ALL F All REVISION LEVEL STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON,

49、 OHIO 45444 I I DESC FORM 193A JUL 91 28.9 - - 3/ - ns 5962-92104 SHEET 19 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-92104 = b O035931 7T8 STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TABLE IA. Electrical Parf