DLA SMD-5962-92103-1992 MICROCIRCUIT DIGITAL CMOS FLOATING POINT PROCESSOR MONOLITHIC SILICON《硅单块 浮点处理器 互补金属氧化物半导体 数字微型电路》.pdf

《DLA SMD-5962-92103-1992 MICROCIRCUIT DIGITAL CMOS FLOATING POINT PROCESSOR MONOLITHIC SILICON《硅单块 浮点处理器 互补金属氧化物半导体 数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-92103-1992 MICROCIRCUIT DIGITAL CMOS FLOATING POINT PROCESSOR MONOLITHIC SILICON《硅单块 浮点处理器 互补金属氧化物半导体 数字微型电路》.pdf（38页珍藏版）》请在麦多课文档分享上搜索。

1、. SMD-59b2-92103 = 9999996 0030833 033 LTR DESCRIPTION SHEET SHEET REV I I I 15 16 17 SIZE A REV STATUS OF SHEETS CAGE CODE 5962-92103 67268 PMIC NIA STAIUDARDIZED WILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A iSC FORM 193 JU

2、L 91 REV III SHEET PREPARED BY Phu H. Nguyen CHECKED BY Tim Noh APPROVED BY Monica L. Poelking DRAUING APPROVAL DATE 92-11 -12 REVISION LEVEL DATE (YR-MO-DA) APPROVED DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, CMOS, FLOATING POINT PROCESSOR, MONOLITHIC SILICON I I 59

3、62-E610-92 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-92103 m 9997996 0030834 T3T m 1. SCOPE 1.1 Scope. This drawing forns a part of a one part - one part

4、 number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and Ml and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying

5、 Wumbcr (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PI

6、N. When I 1.2 2. The PIN shall be as shown in the following example: o1 V 2 X I I 5962 H 92103 - I I I I I I Lead I Case Device 1 Devi ce II Federal RHA stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) - - / Drawing

7、number 1.2.1 RHA designator. Device classes M, B, and S RHA marked devices shall meet the HIL-M-38510 specified RHA levels and shall be mrked with the appropriate RHA designator. the MIL-1-38535 specified RHA levels and shall be marked with the appropriate RIIA designator. non-RHA device. Device cla

8、sses Q and V RHA marked devices shall meet A dash (-1 indicates a 1.2.2 Device type(s). The device typeCs) shall identify the circuit function as follows: Device type Generic number Circuit function o1 FLP Floating point processor 1.2.3 Device class desiqnator. The device class designator shall be a

9、 single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or C Q or V certification and qualification to MIL-M-38510 Cer

10、tification and qualification to MIL-1-38535 1.2.4 Case outline(s1. The case outlinds) shall be as designated in MIL-STO-1835 and as follows: Outline letter Descriptive designator Terminals Package style 2 See figure 1 220 Ceramic, unformed-lead, chip carrier The “X“ designation is 1.2.5 Lead finish.

11、 The lead finish shall be as specified in MIL-M-38510 for classes N, 8, and S or MIL-1-38535 for classes Q and V. Finish letter “X“ shall not be wrked on the microcircuit or its packaging. I for use in specifications when lead finishes A, 8, and C are considered acceptable and interchangeable withou

12、t preference. STAIODARDIZED SIZE 5962-92103 MILITARY DRAWING A DEFEUSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 2 I DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1.3 Absolute maximum ratinqs. I/ Supply

13、 voltage range (V ) . -0.5 V dc to +7.0 V dc DC input voltage range ?B DC output voltage range tbN Output voltage applied to f%gh Z state . -0.5 V dc to VDD + 0.5 V dc 1 -0.5 V dc to VDD + 0.5 V dc . -0.5 V dc to VDD + 0.5 V dc 1 Maximum power dissipation (PD) Storage temperature range . -65OC to +1

14、50C Lead temperature (soldering, IO sec) +250aC Thermal resistance, junction-to-case (OJc) Maximum junction temperature (TJ) +175OC . 2.183 W . 4C/W 1.4 Recommended operatinq conditions. Supply voltage range (VD,) . 4.5 V dc minimum to 5.5 V dc maximum Supply voltage (Vsc) High level input voltage r

15、ange (V Low level input voltage range (V 7 Case operating temperature rangelkTC) 0.0 V dc ) 2.2 V dc to V -0.5 v dc to 808 V dc + 0.5 V dc . -55OC to +125“C 1.5 Diqital Loqic testinq for device classes 61 and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)

16、98.8 percent 2. APPLICABLE DOCUMENTS 2.1 Government specifications, standards, bulletin, and handbook. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index 3f Specifications and Standards spec

17、ified in the solicitation, form a part of this drawing to the extent specified herein. STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SPECIFICATIONS SIZE 5962-92103 A REVISION LEVEL SHEET 3 MILITARY MIL-M-38510 - Microcircuits, General Specification for. MIL-1-385

18、35 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-480 - Configuration Control-Engineering Changes, Deviations and Waivers. MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STO-1835 - Microcircuit Case Outlines. BULLETIN MILITARY MIL-BUL

19、-103 - List of Standardized Military Drawings (SMDs). HANDBOOK MILITARY MIL-HDBK-780 - Standardized Military Drawings. - I/ Stresses above the absolute maximum rating may cause perinanent damage to the device. maximum levels may degrade performance and affect reliability. Extended operation at the P

20、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-(Copies of the specifications, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directe

21、d by the Contracting activity.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issue of the documents which are Do0 adopted are those listed in the issue of the DODISS cited in the solicitation. Un

22、less otherwise specified, the issues of documents not listed in the DODISS arc the issues of the documents cited in the solicitation. STANDWIZED MILITARY DRAWING DEFEBSE ELECTRONICS SUPPLY CEMTER DAYTON, OHIO 45444 ELECTRONICS INDUSTRIES ASSOCIATION (IA) JEOEC Standard No 17 - A Standard Test Proced

23、ure for the characterization of LATCH-UP in CMOS Integrated Ci rcui ts. (App!ications for copies should be addressed to the Electronic Industries Association, M&l Pennsylvania Avenue, N.U., Uashington, DC 20006-1813.) IBH VLSI SYSTEMS, FSD, MANASSAS, VA 155A701 - Engineering and Manufacturing Test S

24、pecification. (Applications for copies should be addresses to the International Business Machine Corporation, Federal Sector Division, 9500 Godwin Drive, Nanassa, VA 22110.) AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTH Standard F1192-88 - Standard Guide for the Measurement of Single Event

25、Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies should be addressed to the American Society for Testing and Materials, 1916 Race Street, Philadelphia, PA 19103-1187.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the

26、references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS SIZE 5962-92103 A REVISION LEVEL SHEET 4 3.1 The individual item requirements for device class M shall be in accordance with 1.2.1 of MIL-STO-883, “Provisions for the use of MIL-STD-883 in conjunction with compl

27、iant non-JAN devices and as specified herein. The individual item requirements for device classes B and S shall be in accordance with MIL-H-38510 and as specified herein. included in this SMD. MIL-1-38535, the device manufacturers Quality Management (GM) plan, and as specified herein. Item requireme

28、nts. For device classes B and S, a full electrical characterization table for each device type shall be The individual item requirements for device classes Q and V shall be in accordance with 3.2 Desiqn, construction, and physical dimensions. The design, construction, and physical dinensions shall b

29、e as specified in MIL-H-38510 for device classes Il, 8, and S and MIL-1-38535 for device classes Q and V and herein. 3.2.1 Case outlineW. 3.2.2 Terminal connections. 3.2.3 Block diearam. 3.2.4 Switching waveforms and test circuits. The case outline(s) shall be in accordance with 1.2.4 herein and fig

30、ure 1. The terminal connections shall be as specified on figure 2. The block diagran shall be as specified on figure 3. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.5 Radiation exposure circuit. 3.3 Electrical performance characteristics and postirradiation parane

31、ter limits. The radiation exposure circuit shall be as specified on figure 5. Unless otherwise specified ierein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical

32、 test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in tables IA and 16. DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-

33、72103 = 9999996 0030837 789 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shalt be in accordance with MIL-STD-883 (see 3.1 herein). MIL-UUL-103. U and V shall be in accordance with MIL-1-38535. Certification/compliance mark. In addition, the manu

34、facturers PIN may also be marked as listed in Marking for device classes B and S shall be in accordance with MIL-M-38510. Marking for device classes 3.5.1 The compliance mark for device class M shall be a “C“ as required in MIL-STD-883 (see 3.1 herein). in MIL-M-38510. The certification mark for dev

35、ice classes B and S shall be a J“ or “JAN“ as required The certification mark for device classes Q and V shall be a “QML“ as required in MIL-1-38535. 3.6 Certificate of compliance. For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an appro

36、ved source of supply in MIL-EUL-103 (see 6.7.3 herein). classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.2 herein). The certificate of compliance submitted to DESC-EC prior to listing a

37、s an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Q and V, the requirements of MIL-1-38535 and the requirements herein. For device 3.7 Certificate of conforman

38、ce. A certificate of conformance as required for device class M in MIL-STD-883 (see 3.1 herein) or device classes B and S in MIL-M-38510 or for device classes Q and V in MIL-1-38535 shall be provided uith each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device clas

39、s M. For device class M, notification to DESC-Et of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-480. 3.9 Verification and review for device class M. For device class M, DESC, DESCs agent, and the acquiring activity Of

40、fshore documentation retain the option to review the manufacturers facility and applicable required documentation. shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assiqnment for device classes M, E, and S. Device classes M, E, and S devices covered by this draw

41、ing shall be in microcircuit group number 105 (see MIL-M-38510, appendix E). 3.11 Serialization for device class S. All device class S devices shall be serialized in accordance with MIL-M-38510. 4. QUALITY ASSURANCE PROVISIONS 4.1 Samplinq and inspection. For device class M, sampling and inspection

42、procedures shall be in accordance with section 4 of MIL-M-38510 to the extent specified in MIL-STD-883 (see 3.1 herein). sampling and inspection procedures shall be in accordance with MIL-M-38510 and method 5005 of MIL-STD-883, except as modified herein. MIL-1-38535 and the device manufacturers QN p

43、lan. For device classes E and S, For device classes Q and V, sampling and inspection procedures shall be in accordance uith 4.2 Screening. for device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspecti

44、on. For device classes 8 and S, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to qualification and quality conformance inspection. For device classes Q and V, screening shall be in accordance with MIL-1-38535, and shall be conducted on

45、all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes M, E, and S. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, E, C, D, or E. For device class M, the test circuit shall be maintained by the manufacturer under doc

46、ument revision level control and shall be made available to the preparing or acquiring activity upon request. qualifying activity. biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. For device classes 6 and S, the test circuit shall be submitte

47、d to the For device classes M, E, and S, the test circuit shall specify the inputs, outputs, (2) T = +125OC, minimum. A b. Interim and final electrical test parameters shall be as specified in table II herein. STANDARD1 ZED SIZE 5962-92103 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON,

48、 OHIO 45444 REVISION LEVEL SHEET Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Test VDD = 5.5 v, VIN = 5.5 v Hiyli level (TTL) output voltage _. 1 D R H - 7 21 Lou level (TTL) output voltage R H _I High level (TTL) input voltaye 41 21 Lou level (TT

49、L) input voltage - 4/ STANDARD1 ZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER High level input current SIZE 5962-92103 A Lou level input current DAYTON, OHIO 45444 iigh level input current (Soft pull-ups) - 51 REVISION LEVEL SHEET 6 See footnotes at end of table. TABLE IA. Etectrical performance characteristics. Conditions Group A 1, 2, 3 - 5.5 V, IoL = 4.0 mA i:! 5 0.8 V, VI, = 2.2 V - 2/ I 1. 2. 3 VDD=5.5V, VIN=O.OV I - 2/ 1. 2. 3 T = -55OC to +125“C N