DLA SMD-5962-92062 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单块 紫外擦拭可编程逻辑设备 互补金属氧化物半导体 数字主储存器微型电路》.pdf
《DLA SMD-5962-92062 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单块 紫外擦拭可编程逻辑设备 互补金属氧化物半导体 数字主储存器微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-92062 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单块 紫外擦拭可编程逻辑设备 互补金属氧化物半导体 数字主储存器微型电路》.pdf(21页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added device type 03. Updated format, editorial changes throughout. 94-08-10 M. A. Frye B Boilerplate update, part of 5 year review. ksr 07-05-25 Robert M. Heber FIRST PAGE HAS BEEN REPLACED REV SHET REV B B B B B B SHEET 15 16 17 18 19 20 REV ST
2、ATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL AP
3、PROVED BY Michael Frye DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-08-05 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-92062 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5
4、962-E316-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92062 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing docum
5、ents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness
6、Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 92062 01 Q Y C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Dra
7、wing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RH
8、A designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Propagation delay time 01 192 Macrocell EPLD 40 ns 02 192 Macrocell EPLD 30 ns 03 192 Macrocell EPLD 35 ns 1.2.3 Devi
9、ce class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL
10、-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GQCC1-J84E 84 “J“ lead chip carrier 2/ Y CMGA15-P84E 84 Pin grid
11、 array 2/ Z CMGA3-P84E 84 Pin grid array 2/ 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this d
12、ocument and will also be listed in QML-38535 and MIL-HDBK-103 (see 6.6 herein). 2/ Lid shall be transparent to permit ultraviolet light erasure. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92062 DEFENSE S
13、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 3/ Supply voltage range (VCC) - -2.0 V dc to +7.0 V dc DC input voltage range - -2.0 V dc to +7.0 V dc 4/ Maximum power dissipation - 2.5 W 5/ Lead temperature (soldering, 10
14、seconds) - +260C Thermal resistance, junction-to-case (JC): Case outlines X, Y, and Z - See MIL-STD-1835 Junction temperature (TJ) - +175C Storage temperature range - -65C to +150C Temperature under bias range - -55C to +125C Endurance - 25 erase/write cycles (minimum) Data retention - 10 years (min
15、imum) 1.4 Recommended operating conditions. Supply voltage range (VCC) - +4.5 V dc to +5.5 V dc Ground voltage (GND) - 0 V dc Input high voltage (VIH) - 2.2 V dc minimum Input low voltage (VIL) - 0.8 V dc maximum Case operating temperature range (TC) - -55C to +125C 6/ Input rise time (tR) - 100 ns
16、maximum Input fall time (tF) - 100 ns maximum 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents ar
17、e those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component C
18、ase Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil from the Standardization Document
19、 Order Desk, 700 Robins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 4/ Minimum dc input voltage is -0.3 V. During tr
20、ansitions, inputs may undershoot to -2.0 V for periods less than 20 ns. Maximum dc voltage on output pins is VCC+ 0.3 V, which may overshoot to +7.0 V for periods less than 20 ns under no load conditions. 5/ Must withstand the added PDdue to short circuit test (e.g., ISC). 6/ Case temperatures are i
21、nstant on. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92062 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The fo
22、llowing document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Even
23、t Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standar
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