DLA SMD-5962-92010 REV B-2001 MICROCIRCUIT DIGITAL CMOS VMEBUS INTERFACE CONTROLLER MONOLITHIC SILICON《硅单块 VME总线地址控制器 互补金属氧化物半导体 数字微型电路》.pdf

《DLA SMD-5962-92010 REV B-2001 MICROCIRCUIT DIGITAL CMOS VMEBUS INTERFACE CONTROLLER MONOLITHIC SILICON《硅单块 VME总线地址控制器 互补金属氧化物半导体 数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-92010 REV B-2001 MICROCIRCUIT DIGITAL CMOS VMEBUS INTERFACE CONTROLLER MONOLITHIC SILICON《硅单块 VME总线地址控制器 互补金属氧化物半导体 数字微型电路》.pdf（57页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Changes in accordance with NOR 5962-R075-95. LTG 95-03-30 Monica L. PoelkingB Change AC limits in table I. Correct pin names in figure 2, figure 3, figure 4, andtable III. Update boilerplate. Editorial changes throughout. TVN01-02-23 Thomas M. Hes

2、sREV B BSHEET 55 56REV B B B B B B B B B B B B B B B B B B B BSHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54REV B B B B B B B B B B B B B B B B B B B BSHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34REV B B B B B B B B B B B B B B REV STATUSOF SHEETS SHEET 1 2 3 4

3、 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Thomas M. HessCHECKED BYThomas M. HessDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216http:/www.dscc.dla.milAPPROVED BYMonica L. PoelkingDRAWING APPROVAL DATE93-01-22MICROCIRCUIT, DIGITAL, CMOS, VMEBUSINTERFACE CONTROLLER, MONOLITHIC SILICONSIZEACAGE C

4、ODE67268 5962-92010STANDARDMICROCIRCUITDRAWINGTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAND AGENCIES OF THEDEPARTMENT OF DEFENSEAMSC N/AREVISION LEVELBSHEET 1 OF 56DSCC FORM 2233APR 97 5962 -E259-01DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by

5、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA 5962-92010STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216 -5000REVISION LEVELBSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents two product assurance class le

6、vels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected

7、in thePIN.1.2 PIN . The PIN is as shown in the following example:5962 - 92010 01 M X X Federal RHA Device Device Case Leadstock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/Drawing number1.2.1 RHA designator . Device cl

8、asses Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RH

9、A device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 VIC068A VMEbus interface controller1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level asfollow

10、s:Device class Device requirements documentationM Vendor self -certification to the requirements for MIL-STD-883 compliant,non -JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s) . The case outline(s

11、) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleX CMGA7-P145 145 Pin grid arrayY See figure 1 160 Flat pack1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for d

12、evice class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA 5962-92010STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216 -5000REVISION LEVELBSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings . 1 /Voltage on an

13、y pin with respect to ground . -0.5 V dc to +7.0 V dcPower dissipation (P D ) . 1.5 WStorage temperature range (T STG ) -65 C to +150 CLead temperature (soldering, 10 seconds) . +260 CThermal resistance, junction-to-case ( JC ):Case outline X . See MIL-STD-1835Case outline Y . 10 C/WJunction tempera

14、ture (T J ) 175 C1.4 Recommended operating conditions .Supply voltage range (V CC ) 5.0 V dc 10%Case operating temperature range (T C ) . -55 C to +125 C2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form apart of

15、 this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listedin the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited inthe solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-

16、38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Methods and Procedures for Microelectronics.MIL-STD-1835 - Interface Standard Electronic Component Case Outli nes.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Mic

17、rocircuit Drawings (SMDs).MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from t he StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)1 / Stresses above th

18、e absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA 5962-92010STANDARDMICROCIRCUIT DRAWINGDEF

19、ENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216 -5000REVISION LEVELBSHEET4DSCC FORM 2234APR 972.2 Order of precedence . In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes

20、 applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Managem

21、ent (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, a

22、nd physical dimensions . The design, construction, and physical dimensions shall be asspecified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for deviceclass M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 and figure 1 here

23、in.3.2.2 Terminal connections . The terminal connections shall be as specified on figure 2.3.2.3 Block diagram . The block diagram shall be as specified on figure 3.3.2.4 Timing waveforms . The timimg waveforms shall be as specified on figure 4.3.2.5 Radiation exposure circuit . The radiation exposu

24、re circuit shall be maintained by the manufacturer under documentrevision level control and shall be made available to the preparing and acquiring activity upon request.3.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, theelectrical

25、performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over thefull case operating temperature range.3.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each su

26、bgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer ha

27、s the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Cert

28、ification/compliance mark . The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requiredin MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q and V, a certificate

29、of compliance shall be required from a QML -38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificateof compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103(s

30、ee 6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved source of supply forthis drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements ofMIL - PRF -38535 and herein or for device class M, the requirements

31、 of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 orfor device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.Provided by IHSN

32、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA 5962-92010STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216 -5000REVISION LEVELBSHEET5DSCC FORM 2234APR 973.8 Notification of change for device class M . For device class M, notificat

33、ion to DSCC -VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to re

34、view the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be inmicrocircuit group number 105 (

35、see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection . For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL -PRF -38535 or as modified in the device manufactu rers Quality Management (QM) plan. The modification in the QM p

36、lanshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening . For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon al

37、l devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL -STD -883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M .a. Burn -in test,

38、 method 1015 of MIL -STD -883.(1) Test condition C or D. The test circuit shall be m aintained by the manufacturer under document revision levelcontrol and shall be made available to the preparing or acquiring activity upon request. The test circuit shallspecify the inputs, outputs, biases, and powe

39、r dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) T A = +125 C, minimum.b. Interim and final electrical test parameters shall be as specified in table II herein.4.2.2 Additional criteria for device classes Q and V .a. The burn -in tes t duration, test condi

40、tion and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn -in test circuit shall be maintainedunder document revision level control of the device manufacturers Technology Review Board (TRB) in accordancewit

41、h MIL -PRF -38535 and shall be made available to the acquiring or preparing activity upon request. The test circuitshall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specifiedin test method 1015 of MIL-STD-883.b. Interim and final electrica

42、l test parameters shall be as specified in table II herein.c. Additional screening for device class V beyond the requirements of device class Q shall be as specified inMIL -PRF -38535, appendix B.4.3 Qualification inspection for device classes Q and V . Qualification inspection for device classes Q

43、and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein forgroups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA 5

44、962-92010STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216 -5000REVISION LEVELBSHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .LimitTest Symbol Conditions 1 /-55 C T C +125 C4.5 V V CC 5.5 Vunless otherwise specifiedGroup AsubgroupsDevicetypeMi

45、n MaxUnitInput low voltage V IL 1, 2, 3 All 0.8Input high voltage V IH 1, 2, 3 All 2.0VV CC = MIN, I OL = 8 mA 2 / 0.6Output low voltage V OLV CC = MIN, I OL = 48 mA 3 /1, 2, 3 All0.6VV CC = MIN, I OH = -3 mA 3 / 2.4Output high voltage V OHV CC = MIN, I OH = -8 mA 2 /1, 2, 3 All2.4VInput leakage cur

46、rent I IL V CC = MAX0.0 V V IN V CC1, 2, 3 All -10 +10 AV CC = MAX, VMEbus pins0.6 V V OUT 2.4 V-10 +10Output leakage current(All output pins disabled)I LOV CC = MAX, other pins0.0 V V OUT V CC1, 2, 3 All-10 +10AI IN = -18 mA -1.2Input clamp voltage V IK V CC = MINI IN = 18 mA1, 2, 3 AllV CC +1.2VPo

47、wer supply current I CC V CC = 5.5 VV IN = 0.0 V, 5.5 V1, 2, 3 All 150 mAInput capacitance 4 / C IN 10Output capacitance 4 / C OUTV CC = 5.0 VT C = 25C, f = 1 MHzSee 4.4.1c4 All15pFFunctional testing See 4.4.1b 7, 8 AllSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or net

48、working permitted without license from IHS-,-,-SIZEA 5962-92010STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216 -5000REVISION LEVELBSHEET7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.LimitTest Symbol Conditions 1 /-55 C T C +125 C4.5 V

49、 V CC 5.5 Vunless otherwise specifiedGroup AsubgroupsDevicetypeMin MaxUnitBRi0 to BBSYH 5 / t A1 9, 10, 11 All 2.5T+4 3T+31.5 nsBRi0 to BBSYL 6 / t A2 9, 10, 11 All 3T+7 3.5T+35 nsBRi0 to BGiOUTL 6 / t A3 9, 10, 11 All 3T+3 4T+28 nsBRi0 to BCLRL t A4 9, 10, 11 All 2 19 nsBGiIN0 TO BGiOUTL t A5 9, 10,